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New three-dimensional dispersion in the type-II Dirac semimetals PtTe$_2$ and PdTe$_2$ revealed through Angle Resolved Photoemission Spectroscopy
Authors:
Ivan Pelayo,
Derek Bergner,
Archibald J. Williams,
Jiayuwen Qi,
Penghao Zhu,
Mahfuzun Nabi,
Warren L. B. Huey,
Luca Moreschini,
Ziling Deng,
Jonathan Denlinger,
Alessandra Lanzara,
Yuan-Ming Lu,
Wolfgang Windl,
Joshua Goldberger,
Claudia Ojeda-Aristizabal
Abstract:
PtTe$_2$ and PdTe$_2$ are among the first transition metal dichalcogenides that were predicted to host type-II Dirac fermions, exotic particles prohibited in free space. These materials are layered and air-stable, which makes them top candidates for technological applications that take advantage of their anisotropic magnetotransport properties. Here, we provide a detailed characterization of the e…
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PtTe$_2$ and PdTe$_2$ are among the first transition metal dichalcogenides that were predicted to host type-II Dirac fermions, exotic particles prohibited in free space. These materials are layered and air-stable, which makes them top candidates for technological applications that take advantage of their anisotropic magnetotransport properties. Here, we provide a detailed characterization of the electronic structure of PtTe$_2$ and PdTe$_2$ using Angle Resolved Photoemission Spectroscopy (ARPES) and Density Functional Theory (DFT) calculations, unveiling a new three-dimensional dispersion in these materials. Through the use of circularly polarized light, we report a different behavior of such dispersion in PdTe$_2$ compared to PtTe$_2$, that we relate to a symmetry analysis of the dipole matrix element. Such analysis reveals a link between the observed circular dichroism and the different momentum-dependent terms in the dispersion of these two compounds, despite their close similarity in crystal structure. Additionally, our data shows a clear difference in the circular dichroic signal for the type-II Dirac cones characteristic of these materials, compared to their topologically protected surface states. Our work provides a useful reference for the ARPES characterization of other transition metal dichalcogenides with topological properties and illustrates the use of circular dichroism as a guide to identify the topological character of two otherwise equivalent band dispersions, and to recognize different attributes in the band structure of similar materials.
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Submitted 16 May, 2024; v1 submitted 23 December, 2023;
originally announced December 2023.
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Linearly dispersive bands at the onset of correlations in K$_x$C$_{60}$ films
Authors:
** Ai,
Luca Moreschini,
Ryo Mori,
Drew W. Latzke,
Jonathan D. Denlinger,
Alex Zettl,
Claudia Ojeda-Aristizabal,
Alessandra Lanzara
Abstract:
Molecular crystals are a flexible platform to induce novel electronic phases. Due to the weak forces between molecules, intermolecular distances can be varied over relatively larger ranges than interatomic distances in atomic crystals. On the other hand, the hop** terms are generally small, which results in narrow bands, strong correlations and heavy electrons. Here, by growing K$_x$C$_{60}$ ful…
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Molecular crystals are a flexible platform to induce novel electronic phases. Due to the weak forces between molecules, intermolecular distances can be varied over relatively larger ranges than interatomic distances in atomic crystals. On the other hand, the hop** terms are generally small, which results in narrow bands, strong correlations and heavy electrons. Here, by growing K$_x$C$_{60}$ fullerides on hexagonal layered Bi$_2$Se$_3$, we show that upon do** the series undergoes a Mott transition from a molecular insulator to a correlated metal, and an in-gap state evolves into highly dispersive Dirac-like fermions at half filling, where superconductivity occurs. This picture challenges the commonly accepted description of the low energy quasiparticles as appearing from a gradual electron do** of the conduction states, and suggests an intriguing parallel with the more famous family of the cuprate superconductors. More in general, it indicates that molecular crystals offer a viable route to engineer electron-electron interactions.
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Submitted 29 May, 2023;
originally announced May 2023.
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Electronic transport mechanisms in a thin crystal of the Kitaev candidate $α$-RuCl$_3$ probed through guarded high impedance measurements
Authors:
Patrick Barfield,
Vinh Tran,
Vikram Nagarajan,
Maya Martinez,
Amirari Diego,
Derek Bergner,
Alessandra Lanzara,
James G. Analytis,
Claudia Ojeda-Aristizabal
Abstract:
$α$-RuCl$_3$ is considered to be the top candidate material for the experimental realization of the celebrated Kitaev model. It is however known that additional interactions beyond the Kitaev model trigger in $α$-RuCl$_3$, a long-range zigzag antiferromagnetic ground state. In this work, we investigate a nanoflake of $α$-RuCl$_3…
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$α$-RuCl$_3$ is considered to be the top candidate material for the experimental realization of the celebrated Kitaev model. It is however known that additional interactions beyond the Kitaev model trigger in $α$-RuCl$_3$, a long-range zigzag antiferromagnetic ground state. In this work, we investigate a nanoflake of $α$-RuCl$_3$ through guarded high impedance measurements aimed at reaching through electronic transport, the regime where the system turns into a zigzag antiferromagnet. We investigated a variety of temperatures (\SI{1.45}{\kelvin} - \SI{175}{\kelvin}) and out-of-plane magnetic fields ranging up to \SI{11}{\tesla}. We found a clear signature of a structural phase transition at $\approx 160$\,K as reported for thin crystals of $α$-RuCl$_3$, as well as a thermally activated behavior at temperatures above $\approx 30$\,K with a characteristic activation energy significantly smaller than the energy gap that we observe for $α$-RuCl$_3$ bulk crystals through our Angle Resolved Photoemission Spectroscopy (ARPES) experiments. Additionally we found that below $\approx 30$\,K, transport is ruled by Efros-Shklovskii (ES) VRH. These observations point to the presence of Coulomb impurities in our thin crystals. Most importantly, our data shows that below the magnetic ordering transition known for bulk $α$-RuCl$_3$ ($\approx 7$\,K), there is a clear deviation from VRH or thermal activation transport mechanisms. Our work demonstrates the possibility of reaching through specialized high impedance measurements, the thrilling ground states predicted for $α$-RuCl$_3$ at low temperatures in the frame of the Kitaev model, and informs about the transport mechanisms in this material in a wide temperature range as well as on important characteristic quantities such as the localization length of the impurities in a thin $α$-RuCl$_3$ crystal.
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Submitted 13 January, 2023; v1 submitted 14 December, 2022;
originally announced December 2022.
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Polarization dependent photoemission as a probe of the magnetic ground state in the layered ferromagnet VI3
Authors:
Derek Bergner,
Tai Kong,
** Ai,
Daniel Eilbott,
Claudia Fatuzzo,
Samuel Ciocys,
Nicholas Dale,
Conrad Stansbury,
Drew Latzke,
Everardo Molina,
Ryan Reno,
Robert J. Cava,
Alessandra Lanzara,
Claudia Ojeda-Aristizabal
Abstract:
Layered ferromagnets are thrilling materials from both a fundamental and technological point of view. VI3 is an interesting example, with a complex magnetism that differentiates it from the first reported Cr based layered ferromagnets. Here, we show in an indirect way through Angle Resolved Photoemission Spectroscopy (ARPES) experiments, the importance of spin-orbit coupling setting the electronic…
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Layered ferromagnets are thrilling materials from both a fundamental and technological point of view. VI3 is an interesting example, with a complex magnetism that differentiates it from the first reported Cr based layered ferromagnets. Here, we show in an indirect way through Angle Resolved Photoemission Spectroscopy (ARPES) experiments, the importance of spin-orbit coupling setting the electronic properties of this material. Our light polarized photoemission measurements point to a ground state with a half-filled e'_+- doublet, where a gap opening is triggered by spin-orbit coupling enhanced by electronic correlations.
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Submitted 14 June, 2022;
originally announced June 2022.
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Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect
Authors:
Paul Anderson,
Yifan Huang,
Yuanjun Fan,
Sara Qubbaj,
Sinisa Coh,
Qin Zhou,
Claudia Ojeda-Aristizabal
Abstract:
Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate…
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Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate through a MEMS (micro-electromechanical system) actuator and magnetoresistance measurements the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers these topological defects, manifested as new quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute the first indication of the in-situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way to the use of reversible topological defects in electronic applications.
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Submitted 24 December, 2020;
originally announced December 2020.
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Competition between magnetic order and charge localization in Na$_2$IrO$_3$ thin crystal devices
Authors:
Josue Rodriguez,
Gilbert Lopez,
Samantha Crouch,
Nicholas P. Breznay,
Robert Kealhofer,
Vikram Nagarajan,
Drew Latzke,
Francisco Ramirez,
Naomy Marrufo,
Peter Santiago,
Jared Lara,
Amirari Diego,
Everardo Molina,
David Rosser,
Hadi Tavassol,
Alessandra Lanzara,
James G. Analytis,
Claudia Ojeda-Aristizabal
Abstract:
Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na$_2$IrO$_3$ has ham…
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Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na$_2$IrO$_3$ has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by Angle Resolved Photoemission Spectroscopy (ARPES) experiments, that electronic transport in Na$_2$IrO$_3$ is ruled by variable range hop** and it is strongly dependent on the magnetic ordering transition known for bulk Na$_2$IrO$_3$, as well as on external electric fields. Electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na$_2$IrO$_3$ thin crystals devices, offering an alternative approach to study insulating layered materials.
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Submitted 11 February, 2020;
originally announced February 2020.
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Orbital character effects in the photon energy and polarization dependence of pure C60 photoemission
Authors:
Drew W. Latzke,
Claudia Ojeda-Aristizabal,
Jonathan D. Denlinger,
Ryan Reno,
Alex Zettl,
Alessandra Lanzara
Abstract:
Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent measurements. Previously obscured dispersions and strong photoemission traits are now revealed by specific light polarizations. The observed intensity effects prove the…
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Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent measurements. Previously obscured dispersions and strong photoemission traits are now revealed by specific light polarizations. The observed intensity effects prove the locking in place of the C$_{60}$ molecules at low temperatures and the existence of an orientational order imposed by the substrate chosen. Most importantly, photon energy- and polarization-dependent effects are shown to be intimately linked with the orbital character of the C$_{60}$ band manifolds which allows for a more precise determination of the orbital character within the HOMO-2. Our observations and analysis provide important considerations for the connection between molecular and crystalline C$_{60}$ electronic structure, past and future band structure studies, and for increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures.
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Submitted 30 April, 2019;
originally announced May 2019.
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Observation of highly dispersive bands in pure thin film C$_{60}$
Authors:
Drew W. Latzke,
Claudia Ojeda-Aristizabal,
Sinéad M. Griffin,
Jonathan D. Denlinger,
Jeffrey B. Neaton,
Alex Zettl,
Alessandra Lanzara
Abstract:
While long-theorized, the direct observation of multiple highly dispersive C$_{60}$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. Here we report a realization of multiple highly dispersive (330-520 meV) valence bands in pure thin film C$_{60}$ on a novel substrate--the three-dimensional topological insulator Bi$_{2}$Se$_{3}$--th…
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While long-theorized, the direct observation of multiple highly dispersive C$_{60}$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. Here we report a realization of multiple highly dispersive (330-520 meV) valence bands in pure thin film C$_{60}$ on a novel substrate--the three-dimensional topological insulator Bi$_{2}$Se$_{3}$--through the use of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The effects of this novel substrate reducing C$_{60}$ rotational disorder are discussed. Our results provide important considerations for past and future band structure studies as well as the increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures.
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Submitted 27 February, 2019;
originally announced February 2019.
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Why do Collapsed Carbon Nanotubes Twist?
Authors:
Hamid Reza Barzegar,
Aiming Yan,
Sinisa Coh,
Eduardo Gracia-Espino,
Claudia Ojeda-Aristizabal,
Gabriel Dunn,
Marvin L. Cohen,
Steven G. Louie,
Thomas Wagberg,
Alex Zettl
Abstract:
We study the collapsing and subsequent spontaneous twisting of a carbon nanotube by in-situ transmission electron microscopy. A custom-sized nanotube is first created in the microscope by selectively extracting shells from a parent multi-wall tube. The few-wall, large-diameter daughter nanotube is driven to collapse via mechanical stimulation, after which the ribbon-like collapsed tube spontaneous…
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We study the collapsing and subsequent spontaneous twisting of a carbon nanotube by in-situ transmission electron microscopy. A custom-sized nanotube is first created in the microscope by selectively extracting shells from a parent multi-wall tube. The few-wall, large-diameter daughter nanotube is driven to collapse via mechanical stimulation, after which the ribbon-like collapsed tube spontaneously twists along its long axis. In-situ diffraction experiments fully characterize the uncollapsed and collapsed tubes. From the experimental observations and associated theoretical analysis, the origin of the twisting is determined to be compressive strain due to charge imbalance.
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Submitted 20 January, 2016;
originally announced January 2016.
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Characterization of collective ground states in single-layer NbSe2
Authors:
Miguel M. Ugeda,
Aaron J. Bradley,
Yi Zhang,
Seita Onishi,
Yi Chen,
Wei Ruan,
Claudia Ojeda-Aristizabal,
Hye** Ryu,
Mark T. Edmonds,
Hsin-Zon Tsai,
Alexander Riss,
Sung-Kwan Mo,
Dunghai Lee,
Alex Zettl,
Zahid Hussain,
Zhi-Xun Shen,
Michael F. Crommie
Abstract:
Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. H…
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Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of Δ = 4 meV at the Fermi energy, which is accessible via STS due to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing new insight into CDW formation and superconductivity in this model strongly-correlated system.
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Submitted 5 November, 2015; v1 submitted 28 June, 2015;
originally announced June 2015.
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Thin film barristor: a gate tunable vertical graphene-pentacene device
Authors:
C. Ojeda-Aristizabal,
W. Bao,
M. S. Fuhrer
Abstract:
We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi energy level of graphene, tuned with an external gate voltage. We interpret the device current within the thermionic emission theory, showing a modul…
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We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi energy level of graphene, tuned with an external gate voltage. We interpret the device current within the thermionic emission theory, showing a modulation of the energy barrier between graphene and pentacene as large as 300meV.
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Submitted 12 February, 2013;
originally announced February 2013.
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Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3
Authors:
C. Ojeda-Aristizabal,
M. S. Fuhrer,
N. P Butch,
J. Paglione,
I. Appelbaum
Abstract:
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermio…
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A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si.
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Submitted 21 May, 2012;
originally announced May 2012.
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Conductance fluctuations and field asymmetry of rectification in graphene
Authors:
C. Ojeda-Aristizabal,
M. Monteverde,
R. Weil,
M. Ferrier,
S. Gueron,
H. Bouchiat
Abstract:
We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations' correlation energy and field, which are functions of the diffusion coefficient, have fundamentally different variations with $n$, illustrating the contrast between massive and massless carriers. The…
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We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations' correlation energy and field, which are functions of the diffusion coefficient, have fundamentally different variations with $n$, illustrating the contrast between massive and massless carriers. The field dependent fluctuations are nearly independent of $n$, but the $n$-dependent fluctuations are not universal and are largest at the charge neutrality point. We also measure the second order conductance fluctuations (mesoscopic rectification). Its field asymmetry, due to electron-electron interaction, decays with conductance, as predicted for diffusive systems.
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Submitted 28 May, 2010; v1 submitted 10 October, 2009;
originally announced October 2009.
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Transport and elastic scattering times as probes of the nature of impurity scattering in single and bilayer graphene
Authors:
M. Monteverde,
C. Ojeda-Aristizabal,
R. Weil,
K. Bennaceur,
M. Ferrier,
S. Gueron,
C. Glattli,
H. Bouchiat,
J. N. Fuchs,
D. Maslov
Abstract:
Both transport $τ_{tr}$ and elastic scattering times $τ_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier density are found to be very different in the monolayer and the bilayer. However their ratio $τ_{tr}/τ_{e} $is found to be of the order of $1.5 $ in both systems and…
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Both transport $τ_{tr}$ and elastic scattering times $τ_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier density are found to be very different in the monolayer and the bilayer. However their ratio $τ_{tr}/τ_{e} $is found to be of the order of $1.5 $ in both systems and independent of the carrier density. These measurements give insight on the nature (neutral or charged) and spatial extent of the scattering centers. Comparison with theoretical predictions yields that the main scattering mechanism in our graphene samples could be due to strong scatterers of short range, inducing resonant scattering, a likely candidate being vacancies.
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Submitted 22 April, 2010; v1 submitted 19 March, 2009;
originally announced March 2009.
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Tuning the proximity effect in a superconductor-graphene-superconductor junction
Authors:
C. M. Ojeda-Aristizabal,
M. Ferrier,
S. Gueron,
H. Bouchiat
Abstract:
We have tuned in situ the proximity effect in a single graphene layer coupled to two Pt/Ta superconducting electrodes. An annealing current through the device changed the transmission coefficient of the electrode/graphene interface, increasing the probability of multiple Andreev reflections. Repeated annealing steps improved the contact sufficiently for a Josephson current to be induced in graph…
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We have tuned in situ the proximity effect in a single graphene layer coupled to two Pt/Ta superconducting electrodes. An annealing current through the device changed the transmission coefficient of the electrode/graphene interface, increasing the probability of multiple Andreev reflections. Repeated annealing steps improved the contact sufficiently for a Josephson current to be induced in graphene.
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Submitted 17 March, 2009;
originally announced March 2009.
