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Accelerated adiabatic passage of a single electron spin qubit in quantum dots
Authors:
Xiao-Fei Liu,
Yuta Matsumoto,
Takafumi Fujita,
Arne Ludwig,
Andreas D. Wieck,
Akira Oiwa
Abstract:
Adiabatic processes can keep the quantum system in its instantaneous eigenstate, which is robust to noises and dissipation. However, it is limited by sufficiently slow evolution. Here, we experimentally demonstrate the transitionless quantum driving (TLQD) of the shortcuts to adiabaticity in gate-defined semiconductor quantum dots (QDs) to greatly accelerate the conventional adiabatic passage for…
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Adiabatic processes can keep the quantum system in its instantaneous eigenstate, which is robust to noises and dissipation. However, it is limited by sufficiently slow evolution. Here, we experimentally demonstrate the transitionless quantum driving (TLQD) of the shortcuts to adiabaticity in gate-defined semiconductor quantum dots (QDs) to greatly accelerate the conventional adiabatic passage for the first time. For a given efficiency of quantum state transfer, the acceleration can be more than twofold. The dynamic properties also prove that the TLQD can guarantee fast and high-fidelity quantum state transfer. In order to compensate for the diabatic errors caused by dephasing noises, the modified TLQD is proposed and demonstrated in experiment by enlarging the width of the counter-diabatic drivings. The benchmarking shows that the state transfer fidelity of 97.8% can be achieved. This work will greatly promote researches and applications about quantum simulations and adiabatic quantum computation based on the gate-defined QDs.
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Submitted 28 January, 2024; v1 submitted 20 December, 2023;
originally announced December 2023.
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Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well
Authors:
T. Nakagawa,
S. Lamoureux,
T. Fujita,
J. Ritzmann,
A. Ludwig,
A. D. Wieck,
A. Oiwa,
M. Korkusinski,
A. Sachrajda,
D. G. Austing,
L. Gaudreau
Abstract:
The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inte…
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The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates.
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Submitted 14 November, 2021;
originally announced November 2021.
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Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot
Authors:
H. Kiyama,
K. Yoshimi,
T. Kato,
T. Nakajima,
A. Oiwa,
S. Tarucha
Abstract:
We report the preparation and readout of multielectron high-spin states, a three-electron quartet, and a four-electron quintet, in a gate-defined GaAs/AlGaAs single quantum dot using spin filtering by quantum Hall edge states coupled to the dot. The readout scheme consists of map** from multielectron to two-electron spin states and a subsequent two-electron spin readout, thus obviating the need…
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We report the preparation and readout of multielectron high-spin states, a three-electron quartet, and a four-electron quintet, in a gate-defined GaAs/AlGaAs single quantum dot using spin filtering by quantum Hall edge states coupled to the dot. The readout scheme consists of map** from multielectron to two-electron spin states and a subsequent two-electron spin readout, thus obviating the need to resolve dense multielectron energy levels. Using this technique, we measure the relaxations of the high-spin states and find them to be an order of magnitude faster than those of low-spin states. Numerical calculations of spin relaxation rates using the exact diagonalization method agree with the experiment. The technique developed here offers a new tool for the study and application of high-spin states in quantum dots.
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Submitted 31 August, 2021;
originally announced August 2021.
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Roadmap on quantum nanotechnologies
Authors:
Arne Laucht,
Frank Hohls,
Niels Ubbelohde,
M Fernando Gonzalez-Zalba,
David J Reilly,
Søren Stobbe,
Tim Schröder,
Pasquale Scarlino,
Jonne V Koski,
Andrew Dzurak,
Chih-Hwan Yang,
Jun Yoneda,
Ferdinand Kuemmeth,
Hendrik Bluhm,
Jarryd Pla,
Charles Hill,
Joe Salfi,
Akira Oiwa,
Juha T Muhonen,
Ewold Verhagen,
Matthew D LaHaye,
Hyun Ho Kim,
Adam W Tsen,
Dimitrie Culcer,
Attila Geresdi
, et al. (4 additional authors not shown)
Abstract:
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu…
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Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.
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Submitted 19 January, 2021;
originally announced January 2021.
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Noise-robust classification of single-shot electron spin readouts using a deep neural network
Authors:
Yuta Matsumoto,
Takafumi Fujita,
Arne Ludwig,
Andreas D. Wieck,
Kazunori Komatani,
Akira Oiwa
Abstract:
Single-shot readout of charge and spin states by charge sensors such as quantum point contacts and quantum dots are essential technologies for the operation of semiconductor spin qubits. The fidelity of the single-shot readout depends both on experimental conditions such as signal-to-noise ratio, system temperature and numerical parameters such as threshold values. Accurate charge sensing schemes…
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Single-shot readout of charge and spin states by charge sensors such as quantum point contacts and quantum dots are essential technologies for the operation of semiconductor spin qubits. The fidelity of the single-shot readout depends both on experimental conditions such as signal-to-noise ratio, system temperature and numerical parameters such as threshold values. Accurate charge sensing schemes that are robust under noisy environments are indispensable for develo** a scalable fault-tolerant quantum computation architecture. In this study, we present a novel single-shot readout classification method that is robust to noises using a deep neural network (DNN). Importantly, the DNN classifier is automatically configured for spin-up and spin-down signals in any noise environment by tuning the trainable parameters using the datasets of charge transition signals experimentally obtained at a charging line. Moreover, we verify that our DNN classification is robust under noisy environment in comparison to the two conventional classification methods used for charge and spin state measurements in various quantum dot experiments.
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Submitted 12 January, 2021; v1 submitted 19 December, 2020;
originally announced December 2020.
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Single-electron charge sensing in self-assembled quantum dots
Authors:
Haruki Kiyama,
Alexander Korsch,
Naomi Nagai,
Yasushi Kanai,
Kazuhiko Matsumoto,
Kazuhiko Hirakawa,
Akira Oiwa
Abstract:
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interfa…
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Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots.
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Submitted 7 December, 2018;
originally announced December 2018.
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Quantum state transfer of angular momentum via single electron photo-excitation from a Zeeman-resolved light hole
Authors:
Kazuyuki Kuroyama,
Marcus Larsson,
Jo Muramoto,
Kentaro Heya,
Takafumi Fujita,
Giles Allison,
Sascha R. Valentin,
Arne Ludwig,
Andreas D. Wieck,
Sadashige Matsuo,
Akira Oiwa,
Seigo Tarucha
Abstract:
Electron spins in GaAs quantum dots have been used to make qubits with high-fidelity gating and long coherence time, necessary ingredients in solid-state quantum computing. The quantum dots can also host photon qubits with energy applicable for optical communication, and can show a promising photon-to-spin conversion. The coherent interface is established through photo-excitation of a single pair…
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Electron spins in GaAs quantum dots have been used to make qubits with high-fidelity gating and long coherence time, necessary ingredients in solid-state quantum computing. The quantum dots can also host photon qubits with energy applicable for optical communication, and can show a promising photon-to-spin conversion. The coherent interface is established through photo-excitation of a single pair of an electron and a Zeeman-resolved light-hole, not heavy-hole. However, no experiments on the single photon to spin conversion have been performed yet. Here we report on single shot readout of a single electron spin generated in a GaAs quantum dot by spin-selective excitation with linearly polarized light. A photo-electron spin generated from a Zeeman-resolved light-hole exciton is detected using an optical spin blockade method in a single quantum dot and a Pauli spin blockade method in a double quantum dot. We found that the blockade probability strongly depends on the photon polarization and the hole state, heavy- or light-hole, indicating a transfer of the angular momentum from single photons to single electron spins. Our demonstration will open a pathway to further investigation on fundamental quantum physics such as quantum entanglement between a wide variety of quantum systems and applications of quantum networking technology.
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Submitted 14 May, 2018;
originally announced May 2018.
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A single eletron-photon pair generation from a single polarization-entangled photon pair
Authors:
Kazuyuki Kuroyama,
Marcus Larsson,
Sadashige Matsuo,
Takafumi Fujita,
Sascha R. Valentin,
Arne Ludwig,
Andreas D. Wieck,
Akira Oiwa,
Seigo Tarucha
Abstract:
We demonstrate paired generation of a single photo-electron in a quantum dot and a single photon from a single polarization-entangled photon pair that is generated by spontaneous parametric down conversion. The electron is reated in a GaAs quantum dot via inter-band resonantexcitation by irradiating one of the paired photons on the dot, while the remaining photon is detected by a single photon cou…
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We demonstrate paired generation of a single photo-electron in a quantum dot and a single photon from a single polarization-entangled photon pair that is generated by spontaneous parametric down conversion. The electron is reated in a GaAs quantum dot via inter-band resonantexcitation by irradiating one of the paired photons on the dot, while the remaining photon is detected by a single photon counter. Because the paired photons are generated simultaneously, the photo-electron and the remaining photon should be observed as a coincident event if the traveling distance is equivalent between them. The coincidence is probabilistic due to the probabilistic generation of the paired photon. We observe the probability of finding the photon with the photo-electron detection substantially higher then that without the photo-electron detection and derive the coincident rate comparable to the emission rate of the original photon pairs.
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Submitted 15 March, 2017;
originally announced March 2017.
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Footprints of hyperfine, spin-orbit, and decoherence effects in Pauli spin blockade
Authors:
T. Fujita,
P. Stano,
G. Allison,
K. Morimoto,
Y. Sato,
M. Larsson,
J. -H. Park,
A. Ludwig,
A. D. Wieck,
A. Oiwa,
S. Tarucha
Abstract:
We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the…
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We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the blockade efficiency. We find pronounced changes in the behavior of eta upon increasing the magnetic field, with eta increasing, saturating and increasing again. We explain this behavior as due to the crossover of the dominant blockade lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence.
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Submitted 15 March, 2016;
originally announced March 2016.
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Superconducting Transport in single and parallel double InAs Quantum Dot Josephson Junctions with Nb-based Superconducting Electrodes
Authors:
Shoji Baba,
Juergen Sailer,
Russell S. Deacon,
Akira Oiwa,
Kenji Shibata,
Kazuhiko Hirakawa,
Seigo Tarucha
Abstract:
We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots we observe an enhanced supercurrent when both do…
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We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots we observe an enhanced supercurrent when both dots are on resonance, which may reflect split Cooper pair tunneling.
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Submitted 8 December, 2015;
originally announced December 2015.
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Single photoelectron spin detection and angular momentum transfer in a gate defined quantum dot
Authors:
Takafumi Fujita,
Kazuhiro Morimoto,
Haruki Kiyama,
Giles Allison,
Marcus Larsson,
Arne Ludwig,
Sascha R. Valentin,
Andreas D. Wieck,
Akira Oiwa,
Seigo Tarucha
Abstract:
Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon polarization to electron spin using gate defined quantum dots (QDs) may give evidence of preserved coherence of angular momentum basis states at the photon-spin interfac…
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Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon polarization to electron spin using gate defined quantum dots (QDs) may give evidence of preserved coherence of angular momentum basis states at the photon-spin interface. The interface would enlarge the concept of quantum information technology, in which single photogenerated electron spins are manipulated with the dots, but this remains a serious challenge. Here, we report the detection of single electron spins generated by polarized single photons via a double QD (DQD) to verify the angular momentum transfer from single photons to single electrons. Pauli spin blockade (PSB) is used to project the photoelectron spin state onto the up or down spin state. Our result promises the realization of coherent quantum state transfer and development of hybrid photon and spin quantum technology.
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Submitted 14 April, 2015;
originally announced April 2015.
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Spin-dependent current through a quantum dot from spin-polarized non-equilibrium quantum Hall edge channels
Authors:
Haruki Kiyama,
Takashi Nakajima,
Soichiro Teraoka,
Akira Oiwa,
Seigo Tarucha
Abstract:
We report selective injection of both spin-up and spin-down single electrons into a quantum dot (QD) from spin-polarized non-equilibrium quantum Hall edge channels (ECs) generated by selective transmission of spin-resolved ECs using a surface gate placed at a distance from the QD. We change the spin polarization of non-equilibrium ECs by changing the bias voltages applied to different source Ohmic…
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We report selective injection of both spin-up and spin-down single electrons into a quantum dot (QD) from spin-polarized non-equilibrium quantum Hall edge channels (ECs) generated by selective transmission of spin-resolved ECs using a surface gate placed at a distance from the QD. We change the spin polarization of non-equilibrium ECs by changing the bias voltages applied to different source Ohmic contacts. The efficiency of spin-up electron injection reaches 0.5, which is approximately 0.2 higher than that induced by spin-dependent tunnel coupling between QD and ECs. On the other hand, the efficiency of spin-down electron injection reaches 0.4. In addition, we rectify the underestimation of the efficiency of spin filtering for equilibrium ECs by numerically subtracting the contribution of the excited states in the QD. The obtained spin-filtering efficiency is higher than that evaluated from the raw experimental data and increases with magnetic field as expected with the increase in the spatial separation between ECs.
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Submitted 3 April, 2015;
originally announced April 2015.
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$4π$-periodic Josephson supercurrent in HgTe-based topological Josephson junctions
Authors:
Jonas Wiedenmann,
Erwann Bocquillon,
Russell S. Deacon,
Simon Hartinger,
Oliver Herrmann,
Teun M. Klapwijk,
Luis Maier,
Christopher Ames,
Christoph Brüne,
Charles Gould,
Akira Oiwa,
Koji Ishibashi,
Seigo Tarucha,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The Josephson effect describes the generic appearance of a supercurrent in a weak link between two superconductors. Its exact physical nature however deeply influences the properties of the supercurrent. Detailed studies of Josephson junctions can reveal microscopic properties of the superconducting pairing (spin-triplet correlations, $d$-wave symmetry) or of the electronic transport (quantum dot,…
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The Josephson effect describes the generic appearance of a supercurrent in a weak link between two superconductors. Its exact physical nature however deeply influences the properties of the supercurrent. Detailed studies of Josephson junctions can reveal microscopic properties of the superconducting pairing (spin-triplet correlations, $d$-wave symmetry) or of the electronic transport (quantum dot, ballistic channels). In recent years, considerable efforts have focused on the coupling of superconductors to topological insulators, in which transport is mediated by topologically protected Dirac surface states with helical spin polarization (while the bulk remains insulating). Here, the proximity of a superconductor is predicted to give rise to unconventional induced $p$-wave superconductivity, with a doublet of topologically protected gapless Andreev bound states, whose energies varies $4π$-periodically with the superconducting phase difference across the junction. In this article, we report the observation of an anomalous response to rf irradiation in a Josephson junction with a weak link of the 3D topological insulator HgTe. The response is understood as due to a $4π$-periodic contribution to the supercurrent, and its amplitude is compatible with the expected contribution of a gapless Andreev doublet.
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Submitted 20 October, 2015; v1 submitted 18 March, 2015;
originally announced March 2015.
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Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths
Authors:
G. Allison,
T. Fujita,
K. Morimoto,
S. Teraoka,
M. Larsson,
H. Kiyama,
A. Oiwa,
S. Haffouz,
D. G. Austing,
A. Ludwig,
A. D. Wieck,
S. Tarucha
Abstract:
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots u…
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We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.
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Submitted 19 December, 2014;
originally announced December 2014.
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Single Photoelectron Detection after Selective Excitation of Electron-Heavy Hole and Electron-Light Hole Pairs in Double Quantum Dots
Authors:
K. Morimoto,
T. Fujita,
G. Allison,
S. Teraoka,
M. Larsson,
H. Kiyama,
S. Haffouz,
D. G. Austing,
A. Ludwig,
A. D. Wieck,
A. Oiwa,
S. Tarucha
Abstract:
We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predomi…
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We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predominantly photogenerated in the buffer layer followed by tunneling into one of the two dots, whereas for the thick barrier sample they are directly photogenerated in the well. For the latter, single photoelectron detection after selective excitation of the heavy and light hole state in the dot is well resolved. This ensures the applicability of our quantum well-based quantum dot systems for the coherent transfer from single photon polarization to single electron spin states.
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Submitted 19 January, 2014;
originally announced January 2014.
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Electrically tunable three-dimensional g-factor anisotropy in single InAs self-assembled quantum dots
Authors:
S. Takahashi,
R. S. Deacon,
A. Oiwa,
K. Shibata,
K. Hirakawa,
S. Tarucha
Abstract:
Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from…
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Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential.
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Submitted 1 March, 2013;
originally announced March 2013.
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Electrical control of Kondo effect and superconducting transport in a side-gated InAs quantum dot Josephson junction
Authors:
Y. Kanai,
R. S. Deacon,
A. Oiwa,
K. Yoshida,
K. Shibata,
K. Hirakawa,
S. Tarucha
Abstract:
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the comp…
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We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the competition between Kondo correlations and superconducting pairing on the QD, observing a decrease in the supercurrent when the Kondo temperature is reduced below the superconducting energy gap in qualitative agreement with theoretical predictions.
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Submitted 16 December, 2009;
originally announced December 2009.
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Large anisotropy of spin-orbit interaction in a single InAs self-assembled quantum dot
Authors:
S. Takahashi,
R. S. Deacon,
K. Yoshida,
A. Oiwa,
K. Shibata,
Y. Tokura,
S. Tarucha
Abstract:
Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground and excited states with opposite spins. The magnetic angular dependence of the SOI energy falls on an absolute cosine function for azimuthal rotation, and a c…
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Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground and excited states with opposite spins. The magnetic angular dependence of the SOI energy falls on an absolute cosine function for azimuthal rotation, and a cosine-like function for tilting rotation. The SOI energy is even quenched at a specific rotation. These angular dependence compare well to calculation of Rashba SOI in a two-dimensional harmonic potential.
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Submitted 16 December, 2009;
originally announced December 2009.
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Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes
Authors:
K. Shibata,
C. Buizert,
A. Oiwa,
K. Hirakawa,
S. Tarucha
Abstract:
We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where…
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We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where $Δ$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.
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Submitted 13 November, 2007;
originally announced November 2007.
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Kondo Universal Scaling for a Quantum Dot Coupled to Superconducting Leads
Authors:
Christo Buizert,
Akira Oiwa,
Kenji Shibata,
Kazuhiro Hirakawa,
Seigo Tarucha
Abstract:
We study competition between the Kondo effect and superconductivity in a single self-assembled InAs quantum dot contacted with Al lateral electrodes. Due to Kondo enhancement of Andreev reflections the zero-bias anomaly develops sidepeaks, separated by the superconducting gap energy Delta. For ten valleys of different Kondo temperature T_K we tune the gap Delta with an external magnetic field. W…
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We study competition between the Kondo effect and superconductivity in a single self-assembled InAs quantum dot contacted with Al lateral electrodes. Due to Kondo enhancement of Andreev reflections the zero-bias anomaly develops sidepeaks, separated by the superconducting gap energy Delta. For ten valleys of different Kondo temperature T_K we tune the gap Delta with an external magnetic field. We find that the zero-bias conductance in each case collapses onto a single curve with Delta/kT_K as the only relevant energy scale, providing experimental evidence for universal scaling in this system.
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Submitted 9 October, 2007;
originally announced October 2007.
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Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration
Authors:
K. Hamaya,
T. Watanabe,
T. Taniyama,
A. Oiwa,
Y. Kitamoto,
Y. Yamazaki
Abstract:
We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperatu…
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We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperature-dependent ac susceptibility is significantly changed with increasing annealing time. On the basis of our recent scenario [Phys. Rev. Lett. 94, 147203 (2005); Phys. Rev. B 73, 155204 (2006).], we deduce that the growth of highly hole-concentrated cluster regions with [110] uniaxial anisotropy is likely the predominant cause of the enhancement in [110] uniaxial anisotropy at the high hole concentration regime. We can clearly rule out anisotropic lattice strain as a possible origin of the switching of the magnetic anisotropy.
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Submitted 19 June, 2006; v1 submitted 25 January, 2006;
originally announced January 2006.
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Theory of carrier dynamics and time resolved reflectivity in InMnAs/GaSb heterostructures
Authors:
G. D. Sanders,
C. J. Stanton,
J. Wang,
J. Kono,
A. Oiwa,
H. Munekata
Abstract:
We present detailed theoretical calculations of two color, time-resolved pump-probe differential reflectivity measurements. The experiments modeled were performed on InMnAs/GaSb heterostructures and showed pronounced oscillations in the differential reflectivity as well as a time-dependent background signal. Previously, we showed that the oscillations resulted from generation of coherent acousti…
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We present detailed theoretical calculations of two color, time-resolved pump-probe differential reflectivity measurements. The experiments modeled were performed on InMnAs/GaSb heterostructures and showed pronounced oscillations in the differential reflectivity as well as a time-dependent background signal. Previously, we showed that the oscillations resulted from generation of coherent acoustic phonon wavepackets in the epilayer and were not associated with the ferromagnetism. Now we take into account not only the oscillations, but also the background signal which arises from photoexcited carrier effects. The two color pump-probe reflectivity experiments are modeled using a Boltzmann equation formalism. We include photogeneration of hot carriers in the InMnAs quantum well by a pump laser and their subsequent cooling and relaxation by emission of confined LO phonons. Recombination of electron-hole pairs via the Schockley-Read carrier trap** mechanism is included in a simple relaxation time approximation. The time resolved differential reflectivity in the heterostructure is obtained by solving Maxwell's equations and compared with experiment. Phase space filling, carrier capture and trap**, band-gap renormalization and induced absorption are all shown to influence the spectra.
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Submitted 6 September, 2005;
originally announced September 2005.
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Propagating Coherent Acoustic Phonon Wavepackets in InMnAs/GaSb
Authors:
J. Wang,
Y. Hashimoto,
J. Kono,
A. Oiwa,
H. Munekata,
G. D. Sanders,
C. J. Stanton
Abstract:
We observe pronounced oscillations in the differential reflectivity of a ferromagnetic InMnAs/GaSb heterostructure using two-color pump-probe spectroscopy. Although originally thought to be associated with the ferromagnetism, our studies show that the oscillations instead result from changes in the position and frequency-dependent dielectric function due to the generation of coherent acoustic ph…
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We observe pronounced oscillations in the differential reflectivity of a ferromagnetic InMnAs/GaSb heterostructure using two-color pump-probe spectroscopy. Although originally thought to be associated with the ferromagnetism, our studies show that the oscillations instead result from changes in the position and frequency-dependent dielectric function due to the generation of coherent acoustic phonons in the ferromagnetic InMnAs layer and their subsequent propagation into the GaSb. Our theory accurately predicts the experimentally measured oscillation period and decay time as a function of probe wavelength.
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Submitted 10 May, 2005;
originally announced May 2005.
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Ultrafast Quenching of Ferromagnetism in InMnAs Induced by Intense Laser Irradiation
Authors:
J. Wang,
C. Sun,
J. Kono,
A. Oiwa,
H. Munekata,
L. Cywinski,
L. J. Sham
Abstract:
Time-resolved magneto-optical Kerr spectroscopy of ferromagnetic InMnAs reveals two distinct {\em demagnetization} processes -- fast ($<1$ ps) and slow ($\sim$100 ps). Both components diminish with increasing temperature and are absent above the Curie temperature. The fast component rapidly grows with pump power and saturates at high fluences ($>10$ mJ/cm$^2$); the saturation value indicates a {…
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Time-resolved magneto-optical Kerr spectroscopy of ferromagnetic InMnAs reveals two distinct {\em demagnetization} processes -- fast ($<1$ ps) and slow ($\sim$100 ps). Both components diminish with increasing temperature and are absent above the Curie temperature. The fast component rapidly grows with pump power and saturates at high fluences ($>10$ mJ/cm$^2$); the saturation value indicates a {\em complete quenching} of ferromagnetism on a sub-picosecond time scale. We attribute this fast dynamics to spin heating through $p$-$d$ exchange interaction between photo-carriers and Mn ions while the $\sim$100 ps component is interpreted as spin-lattice relaxation.
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Submitted 17 August, 2005; v1 submitted 25 April, 2005;
originally announced April 2005.
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Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction
Authors:
R. Moriya,
K. Hamaya,
A. Oiwa,
H. Munekata
Abstract:
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized com…
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We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.
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Submitted 27 April, 2004;
originally announced April 2004.
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Determining carrier densities in InMnAs by cyclotron resonance
Authors:
G. D. Sanders,
Y. Sun,
C. J. Stanton,
G. A. Khodaparast,
J. Kono,
D. S. King,
Y. H. Matsuda,
S. Ikeda,
N. Miura,
A. Oiwa,
H. Munekata
Abstract:
Accurate determination of carrier densities in ferromagnetic semiconductors by Hall measurements is hindered by the anomalous Hall effect, and thus alternative methods are being sought. Here, we propose that cyclotron resonance (CR) is an excellent method for carrier density determination for InMnAs-based magnetic structures. We develop a theory for electronic and magneto-optical properties in n…
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Accurate determination of carrier densities in ferromagnetic semiconductors by Hall measurements is hindered by the anomalous Hall effect, and thus alternative methods are being sought. Here, we propose that cyclotron resonance (CR) is an excellent method for carrier density determination for InMnAs-based magnetic structures. We develop a theory for electronic and magneto-optical properties in narrow gap InMnAs films and superlattices in ultrahigh magnetic fields oriented along [001]. In n-type InMnAs films and superlattices, we find that the e-active CR peak field is pinned at low electron densities and then begins to shift rapidly to higher fields above a critical electron concentration allowing the electron density to be accurately calibrated. In p-type InMnAs, we observe two h-active CR peaks due to heavy and light holes. The lineshapes depend on temperature and line broadening. The light hole CR requires higher hole densities and fields. Analyzing CR lineshapes in p-films and superlattices can help determine hole densities.
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Submitted 25 July, 2003;
originally announced July 2003.
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Photo-induced spin dynamics in ferromagnetic semiconductor $p$-(Ga,Mn)As
Authors:
Y. Mitsumori,
A. Oiwa,
T. Slupinski,
H. Maruki,
Y. Kashimura,
F. Minami,
H. Munekata
Abstract:
Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by photo-generated carrier spins with a femtosecond light pulse of various polarizations. As to the rising process, the rate of Kerr rotation is found comparable to the…
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Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by photo-generated carrier spins with a femtosecond light pulse of various polarizations. As to the rising process, the rate of Kerr rotation is found comparable to the generation rate of spin-polarized carriers. For the decay process, the Kerr rotation and reflectivity signal both show the same decay rate at above the $T_{C}$, whereas, below the $T_{C}$, the former becomes slower than the latter. The magnitude of Kerr rotation suggests that 10$^{2}$ Mn spins are revolved by injecting one hole spin. On the basis of these observations, collective rotation of ferromagnetically coupled Mn spins is discussed in terms of $p$-$d$ exchange interaction and successive transverse spin relaxation. Development of another long-lived behavior under external perpendicular magnetic fields is also disclosed.
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Submitted 11 July, 2003;
originally announced July 2003.
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Cyclotron Resonance in Ferromagnetic InMnAs/(Al,Ga)Sb Heterostructures
Authors:
G. A. Khodaparast,
J. Kono,
Y. H. Matsuda,
S. Ikeda,
N. Miura,
T. Slupinski,
A. Oiwa,
H. Munekata,
Y. Sun,
F. V. Kyrychenko,
G. D. Sanders,
C. J. Stanton
Abstract:
We report the observation of hole cyclotron resonance (CR) in InMnAs/(Al,Ga)Sb heterostructures in a wide temperature range covering both the paramagnetic and ferromagnetic phases. We observed two pronounced resonances that exhibit drastic changes in position, linewidth, and intensity at a temperature higher than the Curie temperature, indicating possible local magnetic ordering or clustering. W…
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We report the observation of hole cyclotron resonance (CR) in InMnAs/(Al,Ga)Sb heterostructures in a wide temperature range covering both the paramagnetic and ferromagnetic phases. We observed two pronounced resonances that exhibit drastic changes in position, linewidth, and intensity at a temperature higher than the Curie temperature, indicating possible local magnetic ordering or clustering. We attribute the two resonances to the fundamental CR transitions expected for delocalized valence-band holes in the quantum limt. Using an 8-band {\bf k$\cdot$p} model, which incorporates ferromagnetism within a mean-field approximation, we show that the temperature-dependent CR peak shift is a direct measure of the carrier-Mn exchange interaction. Significant line narrowing was observed at low temperatures, which we interpret as the suppression of localized spin fluctuations.
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Submitted 3 July, 2003;
originally announced July 2003.
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Ultrafast Photoinduced Softening in a III-V Ferromagnetic Semiconductor for Non-thermal Magneto-Optical Recording
Authors:
G. A. Khodaparast,
J. Wang,
J. Kono,
A. Oiwa,
H. Munekata
Abstract:
Through time-resolved two-color magneto-optical Kerr spectroscopy we have demonstrated that photogenerated transient carriers decrease the coercivity of ferromagnetic InMnAs at low temperatures. This transient ``softening'' persists only during the carrier lifetime ($\sim$ 2 ps) and returns to its original value as soon as the carriers recombine to disappear. We discuss the origin of this unusua…
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Through time-resolved two-color magneto-optical Kerr spectroscopy we have demonstrated that photogenerated transient carriers decrease the coercivity of ferromagnetic InMnAs at low temperatures. This transient ``softening'' persists only during the carrier lifetime ($\sim$ 2 ps) and returns to its original value as soon as the carriers recombine to disappear. We discuss the origin of this unusual phenomenon in terms of carrier-enhanced ferromagnetic exchange interactions between Mn ions and propose an entirely nonthermal scheme for magnetization reversal.
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Submitted 4 March, 2004; v1 submitted 1 May, 2003;
originally announced May 2003.
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Ultrafast optical manipulation of ferromagnetic order in InMnAs/GaSb
Authors:
J. Wang,
G. A. Khodaparast,
J. Kono,
T. Slupinski,
A. Oiwa,
H. Munekata
Abstract:
We have performed a two-color time-resolved magneto-optical Kerr effect (MOKE) study of a ferromagnetic InMnAs/GaSb heterostructure. We observed ultrafast photo-induced changes in the MOKE signal induced by a large density of spin-polarized transient carriers created only within the InMnAs layer using intense 140 fs mid-infrared pulses. Our data clearly demonstrates that magnetic properties, e.g…
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We have performed a two-color time-resolved magneto-optical Kerr effect (MOKE) study of a ferromagnetic InMnAs/GaSb heterostructure. We observed ultrafast photo-induced changes in the MOKE signal induced by a large density of spin-polarized transient carriers created only within the InMnAs layer using intense 140 fs mid-infrared pulses. Our data clearly demonstrates that magnetic properties, e.g., remanence and coercivity, can be strongly modified. The dependence of these changes on the time delay, pump polarization, pump intensity, and sample temperature is discussed.
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Submitted 23 July, 2002;
originally announced July 2002.
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Cyclotron Resonance of Itinerant Holes in Ferromagnetic InMnAs/GaSb Heterostructures
Authors:
G. A. Khodaparast,
J. Kono,
Y. H. Matsuda,
T. Ikaida,
S. Ikeda,
N. Miura,
T. Slupinski,
A. Oiwa,
H. Munekata
Abstract:
We report the first observation of hole cyclotron resonance (CR) in ferromagnetic InMnAs/GaSb heterostructures both in the high-temperature paramagnetic phase and the low-temperature ferromagnetic phase. We clearly resolve two resonances that exhibit strong temperature dependence in position, linewidth, and intensity. We attribute the two resonances to the so-called fundamental CR transitions ex…
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We report the first observation of hole cyclotron resonance (CR) in ferromagnetic InMnAs/GaSb heterostructures both in the high-temperature paramagnetic phase and the low-temperature ferromagnetic phase. We clearly resolve two resonances that exhibit strong temperature dependence in position, linewidth, and intensity. We attribute the two resonances to the so-called fundamental CR transitions expected for delocalized holes in the valence band in the magnetic quantum limit, demonstrating the existence of $p$-like itinerant holes that are describable within the Luttinger-Kohn effective mass theory.
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Submitted 19 July, 2002;
originally announced July 2002.
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Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As
Authors:
J. Okabayashi,
T. Mizokawa,
D. D. Sarma,
A. Fujimori,
T. Slupinski,
A. Oiwa,
H. Munekata
Abstract:
We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of
Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga…
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We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of
Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of
In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.
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Submitted 4 March, 2002;
originally announced March 2002.
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Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K
Authors:
T. Slupinski,
H. Munekata,
A. Oiwa
Abstract:
We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x_eff, following the empirical equation T_C=1300x_eff. We obtained Curie temperatures above 100 K when x…
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We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x_eff, following the empirical equation T_C=1300x_eff. We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; x_eff>0.08) and the hole concentration is in the order of 10^19 cm^-3.
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Submitted 21 January, 2002;
originally announced January 2002.
