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Optical Properties of LiNbO$_2$ thin films
Authors:
T. Kurachi,
T. Yamaguchi,
E. Kobayashi,
T. Soma,
A. Ohtomo,
T. Makino
Abstract:
The complex dielectric functions of LiNbO$_2$ were determined using optical transmittance and reflectance spectroscopies at room temperature. The measured dielectric function spectra reveal distinct structures at several bandgap energies. The bandgaps (exciton resonances) in the spectrum were observed at ca. 2.3, 3.2, 3.9, and 5.1 eV, respectively. These experimental data have been fit using a mod…
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The complex dielectric functions of LiNbO$_2$ were determined using optical transmittance and reflectance spectroscopies at room temperature. The measured dielectric function spectra reveal distinct structures at several bandgap energies. The bandgaps (exciton resonances) in the spectrum were observed at ca. 2.3, 3.2, 3.9, and 5.1 eV, respectively. These experimental data have been fit using a model dielectric function based on the electronic energy-band structure near critical points plus excitonic effects. The features of measured dielectric functions are, to some extent, reproduced quantitatively by an ab-initio calculation including the interaction effects between electrons and holes.
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Submitted 26 October, 2023;
originally announced October 2023.
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Modulation of magnetic property of double-perovskite La2MnCoO6 films by controlling B-antisite disorder
Authors:
R. C. Sahoo,
S. Zhang,
Y. Takeuchi,
M. Kitamura,
K. Horiba,
H. Kumigashira,
O. Sakata,
T. Soma,
A. Ohtomo
Abstract:
The predicted physical properties of double perovskites have usually been compromised by their intrinsic B-antisite (AS) disorder effect, but the relationship between them is still unclear for the La2MnCoO6 (LMCO) system. This study focuses on controlling the AS disorder and quantitatively reveals correlations with magnetic and electronic states in epitaxial LMCO films grown on (111) SrTiO3 substr…
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The predicted physical properties of double perovskites have usually been compromised by their intrinsic B-antisite (AS) disorder effect, but the relationship between them is still unclear for the La2MnCoO6 (LMCO) system. This study focuses on controlling the AS disorder and quantitatively reveals correlations with magnetic and electronic states in epitaxial LMCO films grown on (111) SrTiO3 substrates. The AS fraction was precisely controlled by tuning the growth conditions as evaluated from saturation magnetization and x-ray reflection profiles. The saturation magnetization at 5 K decreased linearly from 6 uB per formula unit by 50% as the AS fraction increased from 0 (perfectly ordered) to 0.5 (fully disordered). The x-ray absorption spectroscopy revealed that valence states of Mn and Co were 4+ (3d^3) and 2+ (3d^7), respectively, regardless of AS fraction. A local-spin-moment model is proposed to explain the net magnetizations with and without AS disorder and Mn/Co valence states, suggesting that only the rearrangement of local spin moment of Co at the antisite plays a key role in tuning the magnetism in this LMCO system.
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Submitted 19 August, 2022;
originally announced August 2022.
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Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films
Authors:
Takuto Soma,
Kohei Yoshimatsu,
Koji Horiba,
Hiroshi Kumigashira,
Akira Ohtomo
Abstract:
In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, the emergence of exotic properties associated with rattling motion of Cs is expected owing to its characteristic β-pyrochlore-type structure. However, a hurdle for crystal growth hampers elucidation of detailed properties and mechanisms of the MIT. Here we report on the epitaxial growth of β-pyrochlore-type CsW2O6 films and th…
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In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, the emergence of exotic properties associated with rattling motion of Cs is expected owing to its characteristic β-pyrochlore-type structure. However, a hurdle for crystal growth hampers elucidation of detailed properties and mechanisms of the MIT. Here we report on the epitaxial growth of β-pyrochlore-type CsW2O6 films and their electronic properties across the MIT. Using pulsed-laser deposi-tion technique, we grew single-crystalline CsW2O6 films exhibiting remarkably lower resistivity compared with a poly-crystalline bulk and sharp MIT around 200 K. Negative magnetoresistance and positive Hall coefficient were found, which became pronounced below 200 K. The valence-band and core-levels photoemission spectra indicated the drastic changes across the MIT. In the valence band photoemission spectrum, the finite density of states was observed at the Fermi level in the metallic phase. In contrast, an energy gap appeared in the insulating phase. The split of W 4f core-level spectrum suggested the charge disproportionation of W5+ and W6+ in the insulating phase. The change of spectral shape in the Cs 4d core levels reflected the rattling motion of Cs+ cations. These results strongly suggest that CsW2O6 is a novel material, in which MIT is driven by the charge disproportionation associated with the rattling motion.
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Submitted 12 June, 2018;
originally announced June 2018.
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Superconductivity in higher titanium oxides
Authors:
K. Yoshimatsu,
O. Sakata,
A. Ohtomo
Abstract:
Recent renewal of the highest transition temperature in a conventional superconductor of the sulfer hydride attracts much attention to exploring simple compounds with the lighter elements, situated in unconventional conditions. We report the discovery of superconductivity in simple oxides of Ti4O7 and g-Ti3O5 in a thin-film form having deliberately tuned epitaxial structures and off-stoichiometry.…
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Recent renewal of the highest transition temperature in a conventional superconductor of the sulfer hydride attracts much attention to exploring simple compounds with the lighter elements, situated in unconventional conditions. We report the discovery of superconductivity in simple oxides of Ti4O7 and g-Ti3O5 in a thin-film form having deliberately tuned epitaxial structures and off-stoichiometry. These higher titanium oxides join in a class of simple-oxide superconductors, and g-Ti3O5 now holds the highest superconducting transition temperature of 7.1 kelvin among them. The mechanism behind the superconductivity is discussed on the basis of electrical measurements and theoretical predictions. We conclude that superconductivity arises from unstabilized bipolaronic insulating states.
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Submitted 7 December, 2016;
originally announced December 2016.
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Insulator to metal transition of WO3 epitaxial films induced by electrochemical Li-ion intercalation
Authors:
Kohei Yoshimatsu,
Takuto Soma,
Akira Ohtomo
Abstract:
We investigated systematic evolutions of structural and electronic properties of LixWO3 films, induced by Li-ion electrochemical reactions. Chronoamperometric Li-ion intercalation could control the amount of Li content up to x ~ 0.5. The resistivity abruptly decreased with increasing x and the films underwent an insulator to metal transition (IMT) within a range of 0.2 < x < 0.24, which was consis…
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We investigated systematic evolutions of structural and electronic properties of LixWO3 films, induced by Li-ion electrochemical reactions. Chronoamperometric Li-ion intercalation could control the amount of Li content up to x ~ 0.5. The resistivity abruptly decreased with increasing x and the films underwent an insulator to metal transition (IMT) within a range of 0.2 < x < 0.24, which was consistent with IMT of cubic NaxWO3. The X-ray diffraction analyses revealed the coexistence of tetragonal and cubic phases across IMT, suggesting that the alkaline-ion content was a primary factor for metallic conductivity in the ReO3-type WO3 system.
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Submitted 16 May, 2016;
originally announced May 2016.
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Epitaxial growth of hexagonal tungsten bronze CsxWO3 films in superconducting phase region exceeding bulk limit
Authors:
Takuto Soma,
Kohei Yoshimatsu,
Akira Ohtomo
Abstract:
We report epitaxial synthesis of superconducting CsxWO3 (x = 0.11, 0.20, 0.31) films on Y-stabilized ZrO2 (111) substrates. The hexagonal crystal structure was verified not only for composition within the stable region of bulk (x = 0.20, 0.31), but also for the out-of-range composition (x = 0.11). The onset of superconducting transition temperature (TC) was recorded 5.8 K for x = 0.11. We found st…
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We report epitaxial synthesis of superconducting CsxWO3 (x = 0.11, 0.20, 0.31) films on Y-stabilized ZrO2 (111) substrates. The hexagonal crystal structure was verified not only for composition within the stable region of bulk (x = 0.20, 0.31), but also for the out-of-range composition (x = 0.11). The onset of superconducting transition temperature (TC) was recorded 5.8 K for x = 0.11. We found strong correlation between TC and c-axis length, irrespective of the Cs content. The results indicate that hidden superconducting phase region of hexagonal tungsten bronze is accessible by using epitaxial synthesis of lightly doped films.
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Submitted 13 May, 2016;
originally announced May 2016.
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Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskites
Authors:
Akira Ohtomo,
Suvankar Chakraverty,
Hisanori Mashiko,
Takayoshi Oshima,
Masashi Kawasaki
Abstract:
We have studied the atomic ordering of B-site transition metals and magnetic properties in the pulsed-laser deposited films of La2CrFeO6 (LCFO) and La2VMnO6 (LVMO), whose bulk materials are known to be single perovskites with random distribution of the B-site cations. Despite similar ionic characters of constituent transition metals in each compound, the maximum B-site order attained was surprisin…
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We have studied the atomic ordering of B-site transition metals and magnetic properties in the pulsed-laser deposited films of La2CrFeO6 (LCFO) and La2VMnO6 (LVMO), whose bulk materials are known to be single perovskites with random distribution of the B-site cations. Despite similar ionic characters of constituent transition metals in each compound, the maximum B-site order attained was surprisingly high, ~90% for LCFO and ~80% for LVMO, suggesting a significant role of epitaxial stabilization in the spontaneous ordering process. Magnetization and valence state characterizations revealed that the magnetic ground state of both compounds was coincidently ferrimagnetic with saturation magnetization of ~2myuB per formula unit, unlike those predicted theoretically. In addition, they were found to be insulating with optical band gaps of 1.6 eV and 0.9 eV for LCFO and LVMO, respectively. Our results present a wide opportunity to explore novel magnetic properties of binary transition-metal perovskites upon epitaxial stabilization of the ordered phase.
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Submitted 19 December, 2012;
originally announced December 2012.
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Ferrimagnetism and spontaneous ordering of transition-metals in La2CrFeO6 double-perovskite films
Authors:
S. Chakraverty,
A. Ohtomo,
D. Okuyama,
M. Saito,
M. Okude,
R. Kumai,
T. Arima,
Y. Tokura,
S. Tsukimoto,
Y. Ikuhara,
M. Kawasaki
Abstract:
We report on atomic ordering of B-site transition-metals and magnetic properties of epitaxial La2CrFeO6 double-perovskite films grown by pulsed-laser deposition under various conditions. The highest ordered sample exhibited a fraction of antisite-disorder of only 0.05 and a saturation magnetization of ~2μ_{B} per formula unit at 5 K. The result is consistent with the antiferromagnetic ordering of…
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We report on atomic ordering of B-site transition-metals and magnetic properties of epitaxial La2CrFeO6 double-perovskite films grown by pulsed-laser deposition under various conditions. The highest ordered sample exhibited a fraction of antisite-disorder of only 0.05 and a saturation magnetization of ~2μ_{B} per formula unit at 5 K. The result is consistent with the antiferromagnetic ordering of local spin moment (3d^{3}_{\downarrow}3d^{5}_{\uparrow}; S = -3/2+5/2 = 1). Therefore, the magnetic ground state of La2CrFeO6 double-perovskite that has been long debate is unambiguously revealed to be ferrimagnetic. Our results present a wide opportunity to explore novel magnetic properties of binary transition-metal perovskites upon epitaxial stabilization of the ordered phase.
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Submitted 29 July, 2011;
originally announced July 2011.
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Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures
Authors:
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki,
S. Akasaka,
H. Yuji,
K. Tamura,
K. Nakahara,
T. Tanabe,
A. Kamisawa,
T. Gokmen,
J. Shabani,
M. Shayegan
Abstract:
We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in th…
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We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6 x 10^11 to 1.6 x 10^12 cm^-2, corresponding to a range of 3.1 < rs < 5.2, where rs is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov-de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction.
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Submitted 2 December, 2008; v1 submitted 27 November, 2008;
originally announced November 2008.
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Shifting donor-acceptor photoluminescence in N-doped ZnO
Authors:
Takayuki Makino,
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki,
H. Koinuma
Abstract:
We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was exp…
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We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.
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Submitted 11 May, 2006;
originally announced May 2006.
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Hole Transport in p-Type ZnO
Authors:
Takayuki Makino,
Akira Ohtomo,
A. Tsukazaki,
M. Kawasaki,
H. Koinuma
Abstract:
A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential…
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A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is dominant. In the calculation of the scattering rate for ionized impurity mechanism, the activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$ cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.
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Submitted 10 May, 2006;
originally announced May 2006.
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Growth mode control of the free carrier density in SrTiO3-d films
Authors:
Akira Ohtomo,
Harold Y. Hwang
Abstract:
We have studied the growth dynamics and electronic properties of SrTiO3-d homoepitaxial films by pulsed laser deposition. We find the two dominant factors determining the growth mode are the kinetics of surface crystallization and oxidation. When matched, persistent two-dimensional layer-by-layer growth can be obtained for hundreds of unit cells. By tuning these kinetic factors, oxygen vacancies…
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We have studied the growth dynamics and electronic properties of SrTiO3-d homoepitaxial films by pulsed laser deposition. We find the two dominant factors determining the growth mode are the kinetics of surface crystallization and oxidation. When matched, persistent two-dimensional layer-by-layer growth can be obtained for hundreds of unit cells. By tuning these kinetic factors, oxygen vacancies can be frozen in the film, allowing controlled, systematic do** across a metal-insulator transition. Metallic films can be grown, exhibiting Hall mobilities as high as 25,000 cm2/Vs.
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Submitted 5 April, 2006;
originally announced April 2006.
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Monte-Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures
Authors:
T. Makino,
K. Saito,
A. Ohtomo,
M. Kawasaki,
R. T. Senger,
K. K. Bajaj
Abstract:
Localization dynamics of excitons was studied for ZnO/MgZnO and CdZnO/MgZnO quantum wells (QW). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hop** was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a qualitatively reasonable agreement with the hop** model, with…
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Localization dynamics of excitons was studied for ZnO/MgZnO and CdZnO/MgZnO quantum wells (QW). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hop** was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a qualitatively reasonable agreement with the hop** model, with accounting for an additional inhomogeneous broadening for the case of linewidth. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.
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Submitted 5 February, 2006;
originally announced February 2006.
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Majority-Carrier Mobilities in Undoped and \textit{n}-type Doped ZnO Epitaxial Layers
Authors:
T. Makino,
Y. Segawa,
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki
Abstract:
Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e…
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Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.
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Submitted 13 October, 2005;
originally announced October 2005.
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Analysis on reflection spectra in strained ZnO thin films
Authors:
T. Makino,
Y. Segawa,
M. Kawasaki,
A. Ohtomo
Abstract:
Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strain. The spectra show two structures at 3.37 eV corresponding to the A-free exciton transition and at 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra w…
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Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strain. The spectra show two structures at 3.37 eV corresponding to the A-free exciton transition and at 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT,), the oscillator strengths, and the dam** parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy E_LT for the A-excitons is characterized by a negatively-peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values.
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Submitted 7 October, 2005;
originally announced October 2005.
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Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga
Authors:
T. Makino,
Y. Segawa,
S. Yoshida,
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki,
H. Koinuma
Abstract:
Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random…
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Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the lineshape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.
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Submitted 7 October, 2005;
originally announced October 2005.
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Electron transport in ZnO thin films
Authors:
T. Makino,
Y. Segawa,
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki
Abstract:
Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. Transport characteristics are calculated by solving the Boltzmann transport equation using a variational method. Mobility limit of 43…
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Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. Transport characteristics are calculated by solving the Boltzmann transport equation using a variational method. Mobility limit of 430 cm$^{2}$/Vs was calculated at 300 K. The temperature dependence of the mobility for an undoped film is calculated and agrees favorably well with experimental data if physical parameters are chosen so as to approach to those. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. It is qualitatively explained in terms of electron-plasmon interaction.
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Submitted 1 July, 2005;
originally announced July 2005.
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Blue light-emitting diode based on ZnO
Authors:
Atsushi Tsukazaki,
Masashi Kubota,
Akira Ohtomo,
Takeyoshi Onuma,
Keita Ohtani,
Hideo Ohno,
Shigefusa F. Chichibu,
Masashi Kawasaki
Abstract:
A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates…
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A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates the current, giving rise to the radiative recombination in the p-type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p-type layer, which is one or two orders of magnitude lower than that in the n-type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n-type ZnO. The employment of conducting ZnO substrates may solve the latter problem.
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Submitted 22 April, 2005;
originally announced April 2005.
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Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga
Authors:
T. Makino,
Y. Segawa,
S. Yoshida,
A. Tsukazaki,
A. Ohtomo,
M. Kawasaki
Abstract:
We investigated the optical properties of epitaxial \textit{n}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. As the Ga do** concentration increased up to $6 \times 10^{20}$ cm$^{-3}$, the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-bandedge photoluminescence (PL) could be observed even at room temperature, the intensi…
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We investigated the optical properties of epitaxial \textit{n}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. As the Ga do** concentration increased up to $6 \times 10^{20}$ cm$^{-3}$, the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-bandedge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the do** concentration was increased except for the highest do** level. It indicates that nonradiative transitions dominate at a low do** density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.
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Submitted 8 June, 2004;
originally announced June 2004.
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Modeling and simulation of polycrystalline ZnO thin-film transistors
Authors:
Faruque M. Hossain,
J. Nishii,
S. Takagi,
A. Ohtomo,
T. Fukumura,
H. Fujioka,
H. Ohno,
H. Koinuma,
M. Kawasaki
Abstract:
Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dens…
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Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dense grain boundaries. We have modeled grain boundaries in ZnO thin film transistors (TFTs) and performed device simulation using a two-dimensional device simulator for understanding the grain boundary effects on the device performance. Actual polycrystalline ZnO TFT modeling is commenced with considering a single grain boundary in the middle of the TFT channel formulating with a Gaussian defect distribution localized in the grain boundary. A double Shottky barrier is formed in the grain boundary and its barrier height are analyzed as functions of defect density and gate bias. The simulation is extended to the TFTs with many grain boundaries to quantitatively analyze the potential profiles developed along the channel. One of the big contrasts of polycrystalline ZnO TFT compared with a polycrystalline Si TFT is that much smaller nanoscaled grain size induces heavy overlap of double Shottky barriers. Through the simulation, we can estimate the total trap state density localized in the grain boundaries for a polycrystalline ZnO by knowing apparent mobility and grain size in the device.
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Submitted 26 August, 2003;
originally announced August 2003.
