-
Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts
Authors:
S. Gupta,
R. Ohshima,
Y. Ando,
T. Endo,
Y. Miyata,
M. Shiraishi
Abstract:
Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer…
▽ More
Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer WSe2 based field effect transistor with most needed multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic anisotropy. We studied contacts behaviour by performing I-V curve measurements and estimating Schottky barrier heights (SBHs). SBHs estimated from experimental data are found to be comparatively small, without using any tunnel barrier. This work expands the current understanding of WSe2 based devices and gives insight into the electrical behaviour of Co/Pt metal contacts, which can open great possibilities for spintronic/valleytronic applications.
△ Less
Submitted 13 October, 2023;
originally announced October 2023.
-
Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co2MnGa
Authors:
Motomi Aoki,
Yuefeng Yin,
Simon Granville,
Yao Zhang,
Nikhil V. Medhekar,
Livio Leiva,
Ryo Ohshima,
Yuichiro Ando,
Masashi Shiraishi
Abstract:
Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisot…
▽ More
Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisotropy of self-induced SOT in Co2MnGa. The magnitude of the SOT is comparable to that of heavy metal/ferromagnet bilayer systems despite the high inversion symmetry of the Co2MnGa structure. More surprisingly, a sign inversion of the self-induced SOT is observed for different crystal axes. This finding stems from the interplay of the topological nature of the electronic states and their strong modulation by external strain. Our research enriches the understanding of the physics of self-induced SOT and demonstrates a versatile method for tuning SOT efficiencies in a wide range of materials for topological and spintronic devices.
△ Less
Submitted 21 July, 2023;
originally announced July 2023.
-
Ferroic Berry Curvature Dipole in a Topological Crystalline Insulator at Room Temperature
Authors:
T. Nishijima,
T. Watanabe,
H. Sekiguchi,
Y. Ando,
E. Shigematsu,
R. Ohshima,
S. Kuroda,
M. Shiraishi
Abstract:
The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT) and non-volatile (i.e., ferroic) BCDs have not yet bee…
▽ More
The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT) and non-volatile (i.e., ferroic) BCDs have not yet been discovered, hindering further progress in topological physics. In this work, we demonstrate a switchable and non-volatile BCD effect at RT in a topological crystalline insulator, Pb1-xSnxTe (PST), which is attributed to ferroic distortion. Surprisingly, the magnitude of the ferroic BCD is several orders of magnitude greater than that of the non-ferroic BCDs that appear, for example, in transition metal dichalcogenides. The discovery of this ferroic and extraordinarily large BCD in PST could pave the way for further progress in topological material science and the engineering of novel topological devices.
△ Less
Submitted 2 March, 2023;
originally announced March 2023.
-
Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating
Authors:
Yuu Maruyama,
Ryo Ohshima,
Ei Shigematsu,
Yuichiro Ando,
Masashi Shiraishi
Abstract:
Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and P…
▽ More
Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and Pt plays the dominant role in the modulation. This finding can facilitate investigations of gate-tunable, spin-related effects and fabrication of spin devices.
△ Less
Submitted 16 February, 2023;
originally announced February 2023.
-
Anomalous sign inversion of spin-orbit torque in ferromagnetic/nonmagnetic bilayer systems due to self-induced spin-orbit torque
Authors:
Motomi Aoki,
Ei Shigematsu,
Ryo Ohshima,
Teruya Shinjo,
Masashi Shiraishi,
Yuichiro Ando
Abstract:
Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers. In this work, we observe anomalous sign inversion of the total SOT in the spin-torque ferromagnetic resonance due to the enhanced SI-SOT, and successfully rationalize the sign inversion through a theoretical calculation consideri…
▽ More
Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers. In this work, we observe anomalous sign inversion of the total SOT in the spin-torque ferromagnetic resonance due to the enhanced SI-SOT, and successfully rationalize the sign inversion through a theoretical calculation considering the SHE in both the NM and FM layers. The findings show that using an FM layer whose SHA sign is the same as that of the NM achieves efficient SOT-magnetization switching with the assistance of the SI-SOT. The contribution of the SI-SOT becomes salient for a weakly conductive NM layer, and conventional analyses that do not consider the SI-SOT can overestimate the SHA of the NM layer by a factor of more than 150.
△ Less
Submitted 19 November, 2022;
originally announced November 2022.
-
All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature
Authors:
Kosuke Ohnishi,
Motomi Aoki,
Ryo Ohshima,
Ei Shigematsu,
Yuichiro Ando,
Taishi Takenobu,
Masashi Shiraishi
Abstract:
Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we r…
▽ More
Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we report all-electric spin device operation using a type-II Weyl semimetal, WTe$_2$, at room temperature. The polarization of spins propagating in the all-electric device is perpendicular to the WTe$_2$ plane, which is ascribed to local in-plane symmetry breaking in WTe$_2$, yielding the spin polarization creation of propagating charged carriers, namely, the spin-polarized state creation from the non-polarized state. Systematic control experiments unequivocally negate unexpected artifacts, such as the anomalous Hall effect, the anisotropic magnetoresistance etc. Creation of all-electric spin devices made of TQMs and their operation at room temperature can pave a new pathway for novel spin devices made of TQMs resilient to thermal fluctuation.
△ Less
Submitted 22 August, 2022;
originally announced August 2022.
-
Observation of gigantic spin conversion anisotropy in bismuth
Authors:
Naoki Fukumoto,
Ryo Ohshima,
Motomi Aoki,
Yuki Fuseya,
Masayuki Matsushima,
Ei Shigematsu,
Teruya Shinjo,
Yuichiro Ando,
Shoya Sakamoto,
Masanobu Shiga,
Shinji Miwa,
Masashi Shiraishi
Abstract:
Whilst the g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such the viewpoints. The g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the g-factor perpendicular to the trigonal axis is negligibly small (< 0.112), whereas the g-factor a…
▽ More
Whilst the g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such the viewpoints. The g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the g-factor perpendicular to the trigonal axis is negligibly small (< 0.112), whereas the g-factor along the trigonal axis is very large (62.7). We clarified in this work that the large g- factor anisotropy gives rise to the gigantic spin conversion anisotropy in Bi from experimental and theoretical approaches. Spin-torque ferromagnetic resonance was applied to estimate the spin conversion efficiency in rhombohedral (110) Bi to be 17%, which is unlike the negligibly small efficiency in Bi(111). Harmonic Hall measurements supports the large spin conversion efficiency in Bi(110). This is the first observation of gigantic spin conversion anisotropy as the clear manifestation of the g-factor anisotropy. Beyond the emblematic case of Bi, our study unveiled the significance of the g-factor anisotropy in condensed-matter physics and can pave a pathway toward establishing novel spin physics under g-factor control.
△ Less
Submitted 15 August, 2022; v1 submitted 31 July, 2022;
originally announced August 2022.
-
Giant spin Hall angle in the Heusler alloy Weyl ferromagnet Co$_2$MnGa
Authors:
L. Leiva,
S. Granville,
Y. Zhang,
S. Dushenko,
E. Shigematsu,
T. Shinjo,
R. Ohshima,
Y. Ando,
M. Shiraishi
Abstract:
Weyl semimetals are playing a major role in condensed matter physics due to exotic topological properties, and their coexistence with ferromagnetism may lead to enhanced spin-related phenomena. Here, the inverse spin Hall effect (ISHE) in the ferromagnetic Weyl-semimetal Heusler alloy Co$_2$MnGa was investigated at room temperature by means of electrical spin injection in lateral spin valve struct…
▽ More
Weyl semimetals are playing a major role in condensed matter physics due to exotic topological properties, and their coexistence with ferromagnetism may lead to enhanced spin-related phenomena. Here, the inverse spin Hall effect (ISHE) in the ferromagnetic Weyl-semimetal Heusler alloy Co$_2$MnGa was investigated at room temperature by means of electrical spin injection in lateral spin valve structures. Spin transport properties such as spin polarization and spin diffusion length in this material were precisely extracted in order to estimate the spin Hall angle $θ_{\textrm{SH}}$, which was found to be $-0.19\pm0.04$ and is among the highest reported for a ferromagnet. Although this value is on the same order of magnitude of known heavy metals, the significantly higher resistivity of Co$_2$MnGa implies an improvement on the magnitude of detection voltages, while its ferromagnetic nature allows controlling the intensity of SHE through the magnetization direction. It was also shown that Onsager's reciprocity does not hold for this system, which is in part attributable to a different spin-dependent Hall conductivity for spin-up and spin-down carriers.
△ Less
Submitted 18 March, 2021;
originally announced March 2021.
-
Inplane spin orbit torque magnetization switching and its detection using the spin rectification effect at sub-GHz frequencies
Authors:
Motomi Aoki,
Ei Shigematsu,
Ryo Ohshima,
Syuta Honda,
Teruya Shinjo,
Masashi Shiraishi,
Yuichiro Ando
Abstract:
Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete DC voltages around an external static magnetic field of 0 mT. These discrete voltages depend on the magnetization directions of the permalloy and enable detecti…
▽ More
Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete DC voltages around an external static magnetic field of 0 mT. These discrete voltages depend on the magnetization directions of the permalloy and enable detection of the inplane magnetization reversal. The threshold current density for the magnetization reversal is from 10 to 20 MA/cm^2, the same order as for known spin orbit torque (SOT) switching with in-plane magnetization materials. The magnitude of the signal is the same or larger than that of the typical ST FMR signal; that is, detection of magnetization switching is highly sensitive in spite of deviation from the optimal ST-FMR condition. The proposed method is applicable to a simple device structure even for a small ferromagnetic electrode with a width of 100 nm.
△ Less
Submitted 9 October, 2020;
originally announced October 2020.
-
Detection of Ferromagnetic Resonance from 1 nm-thick Co
Authors:
S. Yoshii,
R. Ohshima,
Y. Ando,
T. Shinjo,
M. Shiraishi
Abstract:
To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attribute…
▽ More
To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic films.
△ Less
Submitted 3 September, 2020;
originally announced September 2020.
-
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
Authors:
H. Koike,
S. Lee,
R. Ohshima,
E. Shigematsu,
M. Goto,
S. Miwa,
Y. Suzuki,
T. Sasaki,
Y. Ando,
M. Shiraishi
Abstract:
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the do** profile in the Si layer and introduce a larger local strain into the Si channel by changing a cap** insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area produ…
▽ More
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the do** profile in the Si layer and introduce a larger local strain into the Si channel by changing a cap** insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.
△ Less
Submitted 31 August, 2020;
originally announced August 2020.
-
Modulation of spin conversion in a 1.5 nm-thick Pd film by ionic gating
Authors:
Shin-ichiro Yoshitake,
Ryo Ohshima,
Teruya Shinjo,
Yuichiro Ando,
Masashi Shiraishi
Abstract:
Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level of the Pd film, which was corroborated by suppression of the resistivity in the Pd. Electromotive forces arising from the inverse spin Hall effect in Pd under sp…
▽ More
Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level of the Pd film, which was corroborated by suppression of the resistivity in the Pd. Electromotive forces arising from the inverse spin Hall effect in Pd under spin pum** were substantially modulated by the gating, in consequence of the modulation of the spin Hall conductivity of Pd as in an ultrathin Pt film. The same experiment using a thin Cu film, for which the band structure is largely different from Pd and Pt and its SOI is quite small, provides further results supporting our claim. The results obtained help in develo** a holistic understanding of the gate-tunable SOI in solids and confirm a previous explanation of the significant modulation of the spin Hall conductivity in an ultrathin Pt film by gating.
△ Less
Submitted 31 August, 2020;
originally announced August 2020.
-
Sizable spin-transfer torque in Bi/Ni80Fe20 bilayer film
Authors:
M. Matsushima,
S. Miwa,
S. Sakamoto,
T. Shinjo,
R. Ohshima,
Y. Ando,
Y. Fuseya,
M. Shiraishi
Abstract:
The search for efficient spin conversion in Bi has attracted great attention in spin-orbitronics. In the present work, we employ spin-torque ferromagnetic resonance to investigate spin conversion in Bi/Ni80Fe20(Py) bilayer films with continuously varying Bi thickness. In contrast with previous studies, sizable spin-transfer torque (i.e., a sizable spin-conversion effect) is observed in Bi/Py bilay…
▽ More
The search for efficient spin conversion in Bi has attracted great attention in spin-orbitronics. In the present work, we employ spin-torque ferromagnetic resonance to investigate spin conversion in Bi/Ni80Fe20(Py) bilayer films with continuously varying Bi thickness. In contrast with previous studies, sizable spin-transfer torque (i.e., a sizable spin-conversion effect) is observed in Bi/Py bilayer film. Considering the absence of spin conversion in Bi/yttrium-iron-garnet bilayers and the enhancement of spin conversion in Bi-doped Cu, the present results indicate the importance of material combinations to generate substantial spin-conversion effects in Bi.
△ Less
Submitted 19 July, 2020;
originally announced July 2020.
-
Spin transport in a lateral spin valve with a suspended Cu channel
Authors:
Kenjiro Matsuki,
Ryo Ohshima,
Livio Leiva,
Yuichiro Ando,
Teruya Shinjo,
Toshiyuki Tsuchiya,
Masashi Shiraishi
Abstract:
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm…
▽ More
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm at room temperature from the spin signal dependence on the distance between the ferromagnetic injector and detector electrodes. This value is found to be slightly shorter than in a fixed Cu. The decrease in the spin diffusion length in the suspended Cu channel is attributed to an increase in spin scattering originating from naturally oxidized Cu at the bottom of the Cu channel.
△ Less
Submitted 22 June, 2020;
originally announced June 2020.
-
Optical visualization of the enhanced spin Hall effect in bismuth doped silicon
Authors:
Taiki Nishijima,
Yakun Liu,
Dushyant Kumar,
Kyusup Lee,
Fabien Rortais,
Syuta Honda,
Yuichiro Ando,
Ei Shigematsu,
Ryo Ohshima,
Hyunsoo Yang,
Masashi Shiraishi
Abstract:
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation…
▽ More
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.
△ Less
Submitted 2 June, 2020;
originally announced June 2020.
-
Investigation of gating effect in Si spin MOSFET
Authors:
Soobeom Lee,
Fabien Rortais,
Ryo Ohshima,
Yuichiro Ando,
Minori Goto,
Shinji Miwa,
Yoshishige Suzuki,
Hayato Koike,
Masashi Shiraishi
Abstract:
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while kee** constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high…
▽ More
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while kee** constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.
△ Less
Submitted 28 October, 2019;
originally announced October 2019.
-
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Authors:
Sachin Gupta,
F. Rortais,
R. Ohshima,
Y. Ando,
T. Endo,
Y. Miyata,
M. Shiraishi
Abstract:
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 chan…
▽ More
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.
△ Less
Submitted 12 September, 2019;
originally announced September 2019.
-
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
Authors:
Soobeom Lee,
Fabien Rortais,
Ryo Ohshima,
Yuichiro Ando,
Shinji Miwa,
Yoshishige Suzuki,
Hayato Koike,
Masashi Shiraishi
Abstract:
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the origin of the deviation of spin accumulation voltages measured experimentally in a non-degenerate Si spin valve is clarified from that obtained by model calculation…
▽ More
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the origin of the deviation of spin accumulation voltages measured experimentally in a non-degenerate Si spin valve is clarified from that obtained by model calculation using the spin drift diffusion equation including the effect of the spin-dependent interfacial resistance of tunneling barriers. Unlike the case of metallic spin valves, the bias dependence of the resistance-area product for a ferromagnet/MgO/Si interface, resulting in the reappearance of the conductance mismatch, plays a central role to induce the deviation.
△ Less
Submitted 16 October, 2018;
originally announced October 2018.
-
Induced spin-orbit coupling in silicon thin films by bismuth do**
Authors:
F. Rortais,
S. Lee,
R. Ohshima,
S. Dushenko,
Y. Ando,
M. Shiraishi
Abstract:
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by do** with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi dopi…
▽ More
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by do** with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi do** changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi do** becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (Lφ = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by do** with heavy metals.
△ Less
Submitted 16 October, 2018;
originally announced October 2018.
-
Note: Derivative divide, a method for the analysis of broadband ferromagnetic resonance in the frequency domain
Authors:
Hannes Maier-Flaig,
Sebastian T. B. Goennenwein,
Ryo Ohshima,
Masashi Shiraishi,
Rudolf Gross,
Hans Huebl,
Mathias Weiler
Abstract:
Broadband ferromagnetic resonance (bbFMR) spectroscopy is an established experimental tool to quantify magnetic properties. Due to frequency-dependent transmission of the microwave setup, bbFMR measurements in the frequency domain require a suitable background removal method. Here, we present a measurement and data analysis protocol that allows to perform quantitative frequency-swept bbFMR measure…
▽ More
Broadband ferromagnetic resonance (bbFMR) spectroscopy is an established experimental tool to quantify magnetic properties. Due to frequency-dependent transmission of the microwave setup, bbFMR measurements in the frequency domain require a suitable background removal method. Here, we present a measurement and data analysis protocol that allows to perform quantitative frequency-swept bbFMR measurements without the need for a calibration of the microwave setup. The method, its limitations and advantages are described in detail. Finally the method is applied to evaluate FMR spectra of a permalloy thin film. The extracted material parameters are in very good agreement with those obtained using a conventional analysis in field-space.
△ Less
Submitted 22 February, 2018; v1 submitted 16 May, 2017;
originally announced May 2017.
-
Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy
Authors:
Ryo Ohshima,
Stefan Klingler,
Sergey Dushenko,
Yuichiro Ando,
Mathias Weiler,
Hans Huebl,
Teruya Shinjo,
Sebastian T. B. Goennenwein,
Masashi Shiraishi
Abstract:
We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert dam** parameter of the Py layer on top of the Si channel was determined as a function of the Si do** concentration and Py layer thickness. For fixed Py thickness we observed an increase of the Gilbert dam** parameter with decreasing resistivity of the Si channel. For a fixe…
▽ More
We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert dam** parameter of the Py layer on top of the Si channel was determined as a function of the Si do** concentration and Py layer thickness. For fixed Py thickness we observed an increase of the Gilbert dam** parameter with decreasing resistivity of the Si channel. For a fixed Si do** concentration we measured an increasing Gilbert dam** parameter for decreasing Py layer thickness. No increase of the Gilbert dam** parameter was found Py/Si samples with an insulating interlayer. We attribute our observations to an enhanced spin injection into the low-resistivity Si by spin pum**.
△ Less
Submitted 23 April, 2017;
originally announced April 2017.
-
Quantitative investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on YIG
Authors:
Masasyuki Matsushima,
Yuichiro Ando,
Sergey Dushenko,
Ryo Ohshima,
Ryohei Kumamoto,
Teruya Shinjo,
Masashi Shiraishi
Abstract:
The inverse Rashba-Edelstein effect (IREE) is a spin conversion mechanism that recently attracts attention in spintronics and condensed matter physics. In this letter, we report an investigation of the IREE in Bi/Ag by using ferrimagnetic insulator yttrium iron garnet (YIG). We prepared two types of samples with opposite directions of the Rashba field by changing a stacking order of Bi and Ag. An…
▽ More
The inverse Rashba-Edelstein effect (IREE) is a spin conversion mechanism that recently attracts attention in spintronics and condensed matter physics. In this letter, we report an investigation of the IREE in Bi/Ag by using ferrimagnetic insulator yttrium iron garnet (YIG). We prepared two types of samples with opposite directions of the Rashba field by changing a stacking order of Bi and Ag. An electric current generated by the IREE was observed from both stacks, and an efficiency of spin conversion -characterized by the IREE length- was estimated by taking into account a number of contributions left out in previous studies. This study provides a further insight into the IREE spin conversion mechanism: important step towards achieving efficient spin-charge conversion devices.
△ Less
Submitted 2 February, 2017;
originally announced February 2017.
-
Transport and spin conversion of multi-carriers in semimetal bismuth
Authors:
Hiroyuki Emoto,
Yuichiro Ando,
Gaku Eguchi,
Ryo Ohshima,
Eiji Shikoh,
Yuki Fuseya,
Teruya Shinjo,
Masashi Shiraishi
Abstract:
In this paper, we report on the investigation of (1) the transport properties of multi-carriers in semi-metal Bi and (2) the spin conversion physics in this semimetal system in a ferrimagnetic insulator, yttrium-iron-garnet. Hall measurements reveal that electrons and holes co-exist in the Bi, with electrons being the dominant carrier. The results of a spin conversion experiment corroborate the re…
▽ More
In this paper, we report on the investigation of (1) the transport properties of multi-carriers in semi-metal Bi and (2) the spin conversion physics in this semimetal system in a ferrimagnetic insulator, yttrium-iron-garnet. Hall measurements reveal that electrons and holes co-exist in the Bi, with electrons being the dominant carrier. The results of a spin conversion experiment corroborate the results of the Hall measurement; in addition, the inverse spin Hall effect governs the spin conversion in the semimetal/insulator system. This study provides further insights into spin conversion physics in semimetal systems.
△ Less
Submitted 11 February, 2016;
originally announced February 2016.
-
Strong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface
Authors:
Ryo Ohshima,
Yuichiro Ando,
Kosuke Matsuzaki,
Tomofumi Susaki,
Mathias Weiler,
Stefan Klingler,
Hans Huebl,
Eiji Shikoh,
Teruya Shinjo,
Sebastian T. B. Goennenwein,
Masashi Shiraishi
Abstract:
A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a 2-dimensional electron gas (2DEG) embedded at a LaAlO3/SrTiO3 interface surprised researchers in materials and physical sciences because the 2DEG consists of 3d-electrons of Ti with extraordinarily large carrier mobility, even in the insulating oxide heterostructure. To date, a wide variety…
▽ More
A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a 2-dimensional electron gas (2DEG) embedded at a LaAlO3/SrTiO3 interface surprised researchers in materials and physical sciences because the 2DEG consists of 3d-electrons of Ti with extraordinarily large carrier mobility, even in the insulating oxide heterostructure. To date, a wide variety of physical phenomena, such as ferromagnetism and the quantum Hall effect, have been discovered in this 2DEG systems, demonstrating the ability of the d-electron 2DEG systems to provide a material platform for the study of interesting physics. However, because of both ferromagnetism and the Rashba field, long-range spin transport and the exploitation of spintronics functions have been believed difficult to implement in the d-electron 2DEG systems. Here, we report the experimental demonstration of room-temperature spin transport in the d-electron-based 2DEG at a LaAlO3/SrTiO3 interface, where the spin relaxation length is ca. exceeding 200 nm. Our finding, which counters the conventional understandings to d-electron 2DEGs, opens a new field of d-electron spintronics. Furthermore, this work highlights a novel spin function in the conductive oxide system.
△ Less
Submitted 12 January, 2017; v1 submitted 18 January, 2016;
originally announced January 2016.
-
Observation of spin-charge conversion in CVD-grown single-layer graphene
Authors:
Ryo Ohshima,
Atsushi Sakai,
Yuichiro Ando,
Teruya Shinjo,
Kenji Kawahara,
Hiroki Ago,
Masashi Shiraishi
Abstract:
Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pum**. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pum** enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1*10-7…
▽ More
Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pum**. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pum** enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1*10-7. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.
△ Less
Submitted 29 October, 2014; v1 submitted 7 August, 2014;
originally announced August 2014.
