Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
Authors:
Oliver Steuer,
Daniel Schwarz,
Michael Oehme,
Florian Bärwolf,
Yu Cheng,
Fabian Ganss,
René Hübner,
René Heller,
Shengqiang Zhou,
Manfred Helm,
Gianaurelio Cuniberti,
Yordan M. Georgiev,
Slawomir Prucnal
Abstract:
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseud…
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Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3.
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Submitted 13 June, 2024;
originally announced June 2024.
The mod-$2$ cohomology of $32Γ_3f$
Authors:
Markus Oehme
Abstract:
We compute the group cohomology of $32Γ_3f$, a certain group of order 32. For this we construct explicit cocycle representatives of the cohomology generators. We thus lay to rest a discrepancy between several published computations of this cohomology ring.
We compute the group cohomology of $32Γ_3f$, a certain group of order 32. For this we construct explicit cocycle representatives of the cohomology generators. We thus lay to rest a discrepancy between several published computations of this cohomology ring.
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Submitted 22 September, 2015;
originally announced September 2015.
Electrical spin injection and transport in Germanium
Authors:
Yi Zhou,
Wei Han,
Li-Te Chang,
Faxian Xiu,
Minsheng Wang,
Michael Oehme,
Inga A. Fischer,
Joerg Schulze,
Roland. K. Kawakami,
Kang L. Wang
Abstract:
We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge…
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We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.
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Submitted 25 March, 2011;
originally announced March 2011.
