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Electric Field Effect in Multilayer Cr2Ge2Te6: a Ferromagnetic Two-Dimensional Material
Authors:
Wenyu Xing,
Yangyang Chen,
Patrick M. Odenthal,
Xiao Zhang,
Wei Yuan,
Tang Su,
Qi Song,
Tianyu Wang,
Jiangnan Zhong,
Shuang Jia,
X. C. Xie,
Yan Li,
Wei Han
Abstract:
The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D trans…
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The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.
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Submitted 28 April, 2017;
originally announced April 2017.
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Epitaxial Co-Deposition Growth of CaGe2 Films by Molecular Beam Epitaxy for Large Area Germanane
Authors:
Igor V. Pinchuk,
Patrick M. Odenthal,
Adam S. Ahmed,
Walid Amamou,
Joshua E. Goldberger,
Roland K. Kawakami
Abstract:
Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling. Here, we report the successful co-deposition growth of CaGe2 films on Ge(111) substrates by molecular beam epitaxy (MBE) and their subsequent conversi…
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Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling. Here, we report the successful co-deposition growth of CaGe2 films on Ge(111) substrates by molecular beam epitaxy (MBE) and their subsequent conversion to germanane by immersion in hydrochloric acid. We find that the growth of CaGe2 occurs within an adsorption-limited growth regime, which ensures stoichiometry of the film. We utilize in situ reflection high energy electron diffraction (RHEED) to explore the growth temperature window and find the best RHEED patterns at 750 °C. Finally, the CaGe2 films are immersed in hydrochloric acid to convert the films to germanane. Auger electron spectroscopy of the resulting film indicates the removal of Ca and RHEED patterns indicate a single-crystal film with in-plane orientation dictated by the underlying Ge(111) substrate. X-ray diffraction and Raman spectroscopy indicate that the resulting films are indeed germanane. Ex situ atomic force microscopy (AFM) shows that the grain size of the germanane is on the order of a few micrometers, being primarily limited by terraces induced by the miscut of the Ge substrate. Thus, optimization of the substrate could lead to the long-term goal of large area germanane films.
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Submitted 18 December, 2013;
originally announced December 2013.
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Spin accumulation detection of FMR driven spin pum** in silicon-based metal-oxide-semiconductor heterostructures
Authors:
Yong Pu,
P. M. Odenthal,
R. Adur,
J. Beardsley,
A. G. Swartz,
D. V. Pelekhov,
R. K. Kawakami,
J. Pelz,
P. C. Hammel,
E. Johnston-Halperin
Abstract:
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pum** has enabled the investigation of these dynamically injected currents across a wide variety of ferromagnetic materials. However, while this approach has proven to be an invaluable diagnostic for exploring the spin pum** process…
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The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pum** has enabled the investigation of these dynamically injected currents across a wide variety of ferromagnetic materials. However, while this approach has proven to be an invaluable diagnostic for exploring the spin pum** process it requires strong spin-orbit coupling, thus substantially limiting the materials basis available for the detector/channel material (primarily Pt, W and Ta). Here, we report FMR driven spin pum** into a weak spin-orbit channel through the measurement of a spin accumulation voltage in a Si-based metal-oxide-semiconductor (MOS) heterostructure. This alternate experimental approach enables the investigation of dynamic spin pum** in a broad class of materials with weak spin-orbit coupling and long spin lifetime while providing additional information regarding the phase evolution of the injected spin ensemble via Hanle-based measurements of the effective spin lifetime.
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Submitted 4 November, 2013;
originally announced November 2013.
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Integrating MBE materials with graphene to induce novel spin-based phenomena
Authors:
Adrian G. Swartz,
Kathleen M. McCreary,
Wei Han,
Jared J. I. Wong,
Patrick M. Odenthal,
Hua Wen,
Jen-Ru Chen,
Yufeng Hao,
Rodney S. Ruoff,
Jaroslav Fabian,
Roland K. Kawakami
Abstract:
Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent…
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Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent phenomena. First, we investigate the epitaxial growth the ferromagnetic insulator EuO on graphene and discuss possible scenarios for realizing exchange splitting and exchange fields by ferromagnetic insulators. Second, we investigate the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms). The behavior of these magnetic moments is studied using non-local spin transport to directly probe the spin-degree of freedom of the defect-induced states. We also report the presence of enhanced electron g-factors caused by the exchange fields present in the system. Importantly, the exchange field is found to be highly gate dependent, with decreasing g-factors with increasing carrier densities.
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Submitted 22 March, 2013;
originally announced March 2013.
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Integration of the Ferromagnetic Insulator EuO onto Graphene
Authors:
Adrian G. Swartz,
Patrick M. Odenthal,
Yufeng Hao,
Rodney S. Ruoff,
Roland K. Kawakami
Abstract:
We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wavefunction…
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We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wavefunctions at the FMI/graphene interface can induce a large spin splitting inside the graphene. Experimental realization of this effect could lead to new routes for spin manipulation, which is a necessary requirement for a functional spin transistor. Furthermore, EPI could lead to novel spintronic behavior such as controllable magnetoresistance, gate tunable exchange bias, and quantized anomalous Hall effect. However, experimentally, EuO has not yet been integrated onto graphene. Here we report the successful growth of high quality crystalline EuO on highly-oriented pyrolytic graphite (HOPG) and single-layer graphene. The epitaxial EuO layers have (001) orientation and do not induce an observable D peak (defect) in the Raman spectra. Magneto-optic measurements indicate ferromagnetism with Curie temperature of 69 K, which is the value for bulk EuO. Transport measurements on exfoliated graphene before and after EuO deposition indicate only a slight decrease in mobility.
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Submitted 22 February, 2013;
originally announced February 2013.
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Effect of in-situ deposition of Mg adatoms on spin relaxation in graphene
Authors:
Adrian G. Swartz,
Jen-Ru Chen,
Kathleen M. McCreary,
Patrick M. Odenthal,
Wei Han,
Roland K. Kawakami
Abstract:
We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport behavior. All measurements are performed on non-local graphene tunneling spin valves exposed in-situ to Mg adatoms, thus systematically introducing atomic-scale cha…
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We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport behavior. All measurements are performed on non-local graphene tunneling spin valves exposed in-situ to Mg adatoms, thus systematically introducing atomic-scale charged impurity scattering. While charge transport properties exhibit decreased mobility and decreased momentum scattering times, the observed spin lifetimes are not significantly affected indicating that charged impurity scattering is inconsequential in the present regime of spin relaxation times.
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Submitted 22 February, 2013;
originally announced February 2013.
