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10 ps timing with highly irradiated 3D trench silicon pixel sensors
Authors:
A. Lampis,
F. Borgato,
D. Brundu,
A. Cardini,
G. M. Cossu,
G. -F. Dalla Betta,
M. Garau,
L. La Delfa,
A. Lai,
A. Loi,
M. Obertino,
G. Simi,
S. Vecchi
Abstract:
In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5 \cdot 10^{16}\,1\,MeV\, n_{eq}\,cm^{-2}$. This feature and a detection efficiency close to $99\%$ make this sensors one of the best candidates for 4D tracking…
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In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5 \cdot 10^{16}\,1\,MeV\, n_{eq}\,cm^{-2}$. This feature and a detection efficiency close to $99\%$ make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments.
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Submitted 8 November, 2022; v1 submitted 29 September, 2022;
originally announced September 2022.
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Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements
Authors:
Davide Brundu,
Alessandro Cardini,
Andrea Contu,
Gian Matteo Cossu,
Gian Franco Dalla Betta,
Michela Garau,
Adriano Lai,
Andrea Lampis,
Angelo Loi,
Maria Margherita Obertino,
Benedetto Gianluca Siddi,
Stefania Vecchi
Abstract:
This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at $π-$M1 beam at PSI laboratory. The simulation is based on the combined use of several software tools (TCAD, GEANT4, TCoDe and TFBoost) which allow to…
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This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at $π-$M1 beam at PSI laboratory. The simulation is based on the combined use of several software tools (TCAD, GEANT4, TCoDe and TFBoost) which allow to fully design and simulate the device physics response in very short computational time, O(1-100 s) per simulated signal, by exploiting parallel computation using single or multi-thread processors. This allowed to produce large samples of simulated signals, perform detailed studies of the sensor characteristics and make precise comparisons with experimental results.
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Submitted 15 June, 2021;
originally announced June 2021.
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Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector
Authors:
R. Abbott,
A. Abreu,
F. Addesa,
M. Alhusseini,
T. Anderson,
Y. Andreev,
A. Apresyan,
R. Arcidiacono,
M. Arenton,
E. Auffray,
D. Bastos,
L. A. T. Bauerdick,
R. Bellan,
M. Bellato,
A. Benaglia,
M. Benettoni,
R. Bertoni,
M. Besancon,
S. Bharthuar,
A. Bornheim,
E. Brücken,
J. N. Butler,
C. Campagnari,
M. Campana,
R. Carlin
, et al. (174 additional authors not shown)
Abstract:
The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about…
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The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about 30 ps at the beginning of operation, and degrading to 50-60 ps at the end of the detector lifetime as a result of radiation damage. In this work, we present the results obtained using a 120 GeV proton beam at the Fermilab Test Beam Facility to measure the time resolution of unirradiated sensors. A proof-of-concept of the sensor layout proposed for the barrel region of the MTD, consisting of elongated crystal bars with dimensions of about 3 x 3 x 57 mm$^3$ and with double-ended SiPM readout, is demonstrated. This design provides a robust time measurement independent of the impact point of the MIP along the crystal bar. We tested LYSO:Ce bars of different thickness (2, 3, 4 mm) with a geometry close to the reference design and coupled to SiPMs manufactured by Hamamatsu and Fondazione Bruno Kessler. The various aspects influencing the timing performance such as the crystal thickness, properties of the SiPMs (e.g. photon detection efficiency), and impact angle of the MIP are studied. A time resolution of about 28 ps is measured for MIPs crossing a 3 mm thick crystal bar, corresponding to an MPV energy deposition of 2.6 MeV, and of 22 ps for the 4.2 MeV MPV energy deposition expected in the BTL, matching the detector performance target for unirradiated devices.
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Submitted 16 July, 2021; v1 submitted 15 April, 2021;
originally announced April 2021.
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Intrinsic time resolution of 3D-trench silicon pixels for charged particle detection
Authors:
Lucio Anderlini,
Mauro Aresti,
Andrea Bizzeti,
Maurizio Boscardin,
Alessandro Cardini,
Gian-Franco Dalla Betta,
Marco Ferrero,
Giulio Forcolin,
Michela Garau,
Adriano Lai,
Andrea Lampis,
Angelo Loi,
Chiara Lucarelli,
Roberto Mendicino,
Roberto Mulargia,
Margherita Obertino,
Enrico Robutti,
Sabina Ronchin,
Marta Ruspa,
Stefania Vecchi
Abstract:
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50$μ$m are typical minimum requirements. This poses an important scientific and technological…
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In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50$μ$m are typical minimum requirements. This poses an important scientific and technological challenge on the development of particle sensors and processing electronics. The TIMESPOT initiative (which stands for TIME and SPace real-time Operating Tracker) aims at the development of a full prototype detection system suitable for the particle trackers of the next-to-come particle physics experiments. This paper describes the results obtained on the first batch of TIMESPOT silicon sensors, based on a novel 3D MEMS (micro electro-mechanical systems) design. Following this approach, the performance of other ongoing silicon sensor developments has been matched and overcome, while using a technology which is known to be robust against radiation degradation. A time resolution of the order of 20ps has been measured at room temperature suggesting also possible improvements after further optimisations of the front-end electronics processing stage.
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Submitted 29 July, 2020; v1 submitted 22 April, 2020;
originally announced April 2020.
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Test of Ultra Fast Silicon Detectors for Picosecond Time Measurements with a New Multipurpose Read-Out Board
Authors:
Nicola Minafra,
Hussein Al Ghoul,
Roberta Arcidiacono,
Nicolo Cartiglia,
Laurent Forthomme,
Roberto Mulargia,
Maria Obertino,
Christophe Royon
Abstract:
Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to rea…
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Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to read out a wide range of detectors and it was optimized in this test for the UFSD output signal. In this paper we report the results of the experimental tests using 50 $\rm{μm}$ thick UFSD with a sensitive area of 1.4 $\rm{mm^2}$. A timing precision below 30 ps was achieved.
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Submitted 26 April, 2017; v1 submitted 18 April, 2017;
originally announced April 2017.
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Test of UFSD Silicon Detectors for the TOTEM Upgrade Project
Authors:
R. Arcidiacono,
M. Berretti,
E. Bossini,
M. Bozzo,
N. Cartiglia,
M. Ferrero,
V. Georgiev,
T. Isidori,
R. Linhart,
N. Minafra,
M. M. Obertino,
V. Sola,
N. Turini
Abstract:
This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bia…
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This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bias voltage of 180 V. Timing precision has also been measured as a function of the bias voltage.
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Submitted 16 February, 2017;
originally announced February 2017.
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Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
Authors:
N. Cartiglia,
A. Staiano,
V. Sola,
R. Arcidiacono,
R. Cirio,
F. Cenna,
M. Ferrero,
V. Monaco,
R. Mulargia,
M. Obertino,
F. Ravera,
R. Sacchi,
A. Bellora,
S. Durando,
M. Mandurrino,
N. Minafra,
V. Fadeyev,
P. Freeman,
Z. Galloway,
E. Gkougkousis,
H. Grabas,
B. Gruey,
C. A. Labitan,
R. Losakul,
Z. Luce
, et al. (18 additional authors not shown)
Abstract:
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below th…
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In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
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Submitted 3 January, 2017; v1 submitted 30 August, 2016;
originally announced August 2016.
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Observation of the rare $B^0_s\toμ^+μ^-$ decay from the combined analysis of CMS and LHCb data
Authors:
The CMS,
LHCb Collaborations,
:,
V. Khachatryan,
A. M. Sirunyan,
A. Tumasyan,
W. Adam,
T. Bergauer,
M. Dragicevic,
J. Erö,
M. Friedl,
R. Frühwirth,
V. M. Ghete,
C. Hartl,
N. Hörmann,
J. Hrubec,
M. Jeitler,
W. Kiesenhofer,
V. Knünz,
M. Krammer,
I. Krätschmer,
D. Liko,
I. Mikulec,
D. Rabady,
B. Rahbaran
, et al. (2807 additional authors not shown)
Abstract:
A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six sta…
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A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\toμ^+μ^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM.
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Submitted 17 August, 2015; v1 submitted 17 November, 2014;
originally announced November 2014.
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Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
Authors:
M. Bubna,
E. Alagoz,
A. Krzywda,
O. Koybasi,
K. Arndt,
D. Bortoletto,
I. Shipsey,
G. Bolla,
A. Kok,
T. -E. Hansen,
T. A. Hansen,
G. U. Jensen,
J. M. Brom,
M. Boscardin,
J. Chramowicz,
J. Cumalat,
G. F. Dalla Betta,
M. Dinardo,
A. Godshalk,
M. Jones,
M. D. Krohn,
A. Kumar,
C. M. Lei,
L. Moroni,
L. Perera
, et al. (10 additional authors not shown)
Abstract:
The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration…
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The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.
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Submitted 30 April, 2014; v1 submitted 25 February, 2014;
originally announced February 2014.
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Performance of Ultra-Fast Silicon Detectors
Authors:
N. Cartiglia,
M. Baselga,
G. Dellacasa,
S. Ely,
V. Fadeyev,
Z. Galloway,
F. Marchetto,
S. Maroiu,
G. Mazza,
J. Ngo,
M. Obertino,
C. Parker,
A. Rivetti,
D. Shumacher,
H. F-W. Sadrozinski,
A. Seiden,
A. Zatserklyaniy
Abstract:
The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.
The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.
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Submitted 5 December, 2013; v1 submitted 4 December, 2013;
originally announced December 2013.
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Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter
Authors:
The CMS Electromagnetic Calorimeter Group,
P. Adzic,
N. Almeida,
D. Andelin,
I. Anicin,
Z. Antunovic,
R. Arcidiacono,
M. W. Arenton,
E. Auffray,
S. Argiro,
A. Askew,
S. Baccaro,
S. Baffioni,
M. Balazs,
D. Bandurin,
D. Barney,
L. M. Barone,
A. Bartoloni,
C. Baty,
S. Beauceron,
K. W. Bell,
C. Bernet,
M. Besancon,
B. Betev,
R. Beuselinck
, et al. (245 additional authors not shown)
Abstract:
Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews t…
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Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.
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Submitted 21 December, 2009;
originally announced December 2009.
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The FP420 R&D Project: Higgs and New Physics with forward protons at the LHC
Authors:
M. G. Albrow,
R. B. Appleby,
M. Arneodo,
G. Atoian,
I. L. Azhgirey,
R. Barlow,
I. S. Bayshev,
W. Beaumont,
L. Bonnet,
A. Brandt,
P. Bussey,
C. Buttar,
J. M. Butterworth,
M. Carter,
B. E. Cox,
D. Dattola,
C. Da Via,
J. de Favereau,
D. d'Enterria,
P. De Remigis,
A. De Roeck,
E. A. De Wolf,
P. Duarte,
J. R. Ellis,
B. Florins
, et al. (73 additional authors not shown)
Abstract:
We present the FP420 R&D project, which has been studying the key aspects of the development and installation of a silicon tracker and fast-timing detectors in the LHC tunnel at 420 m from the interaction points of the ATLAS and CMS experiments. These detectors would measure precisely very forward protons in conjunction with the corresponding central detectors as a means to study Standard Model…
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We present the FP420 R&D project, which has been studying the key aspects of the development and installation of a silicon tracker and fast-timing detectors in the LHC tunnel at 420 m from the interaction points of the ATLAS and CMS experiments. These detectors would measure precisely very forward protons in conjunction with the corresponding central detectors as a means to study Standard Model (SM) physics, and to search for and characterise New Physics signals. This report includes a detailed description of the physics case for the detector and, in particular, for the measurement of Central Exclusive Production, pp --> p + phi + p, in which the outgoing protons remain intact and the central system phi may be a single particle such as a SM or MSSM Higgs boson. Other physics topics discussed are gamma-gamma and gamma-p interactions, and diffractive processes. The report includes a detailed study of the trigger strategy, acceptance, reconstruction efficiencies, and expected yields for a particular p p --> p H p measurement with Higgs boson decay in the b-bbar mode. The document also describes the detector acceptance as given by the LHC beam optics between the interaction points and the FP420 location, the machine backgrounds, the new proposed connection cryostat and the moving ("Hamburg") beam-pipe at 420 m, and the radio-frequency impact of the design on the LHC. The last part of the document is devoted to a description of the 3D silicon sensors and associated tracking performances, the design of two fast-timing detectors capable of accurate vertex reconstruction for background rejection at high-luminosities, and the detector alignment and calibration strategy.
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Submitted 2 January, 2009; v1 submitted 2 June, 2008;
originally announced June 2008.
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Precision measurements of the total and partial widths of the psi(2S) charmonium meson with a new complementary-scan technique in antiproton-proton annihilations
Authors:
Fermilab E835 Collaboration,
M. Andreotti,
S. Bagnasco,
W. Baldini,
D. Bettoni,
G. Borreani,
A. Buzzo,
R. Calabrese,
R. Cester,
G. Cibinetto,
P. Dalpiaz,
G. Garzoglio,
K. E. Gollwitzer,
M. Graham,
M. Hu,
D. Joffe,
J. Kasper,
G. Lasio,
M. Lo Vetere,
E. Luppi,
M. Macrì,
M. Mandelkern,
F. Marchetto,
M. Marinelli,
E. Menichetti
, et al. (24 additional authors not shown)
Abstract:
We present new precision measurements of the psi(2S) total and partial widths from excitation curves obtained in antiproton-proton annihilations by Fermilab experiment E835 at the Antiproton Accumulator in the year 2000. A new technique of complementary scans was developed to study narrow resonances with stochastically cooled antiproton beams. The technique relies on precise revolution-frequency…
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We present new precision measurements of the psi(2S) total and partial widths from excitation curves obtained in antiproton-proton annihilations by Fermilab experiment E835 at the Antiproton Accumulator in the year 2000. A new technique of complementary scans was developed to study narrow resonances with stochastically cooled antiproton beams. The technique relies on precise revolution-frequency and orbit-length measurements, while making the analysis of the excitation curve almost independent of machine lattice parameters. We study the psi(2S) meson through the processes pbar p -> e+ e- and pbar p -> J/psi + X -> e+ e- + X. We measure the width to be Gamma = 290 +- 25(sta) +- 4(sys) keV and the combination of partial widths Gamma_e+e- * Gamma_pbarp / Gamma = 579 +- 38(sta) +- 36(sys) meV, which represent the most precise measurements to date.
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Submitted 27 September, 2007; v1 submitted 6 March, 2007;
originally announced March 2007.
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Measurement of the branching ratios $ψ^\prime \to e^+ e^-$, $ψ^\prime \to J/ψππ$ and $ψ^\prime \to J/ψη$
Authors:
M. Andreotti,
S. Bagnasco,
W. Baldini,
D. Bettoni,
G. Borreani,
A. Buzzo,
R. Calabrese,
R. Cester,
G. Cibinetto,
P. Dalpiaz,
G. Garzoglio,
K. E. Gollwitzer,
M. Graham,
M. Hu,
D. Joffe,
J. Kasper,
G. Lasio,
M. Lo Vetere,
E. Luppi,
M. Macri,
M. Mandelkern,
F. Marchetto,
M. Marinelli,
E. Menichetti,
Z. Metreveli
, et al. (24 additional authors not shown)
Abstract:
We have measured several branching ratios for $ψ^\prime$ decay using the data collected by FNAL E835 experiment during year 2000, obtaining ${\cal B}(ψ^\prime \to e^+ e^-) = 0.0068\pm0.0001\pm0.0004$, ${\cal B}(ψ^\prime \to J/ψπ^+ π^-) = 0.292\pm0.005\pm0.018$, ${\cal B}(ψ^\prime \to J/ψπ^0 π^0) = 0.167\pm0.005\pm0.014$ and ${\cal B}(ψ^\prime \to J/ψη) = 0.028\pm0.002\pm0.002$. We also present a…
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We have measured several branching ratios for $ψ^\prime$ decay using the data collected by FNAL E835 experiment during year 2000, obtaining ${\cal B}(ψ^\prime \to e^+ e^-) = 0.0068\pm0.0001\pm0.0004$, ${\cal B}(ψ^\prime \to J/ψπ^+ π^-) = 0.292\pm0.005\pm0.018$, ${\cal B}(ψ^\prime \to J/ψπ^0 π^0) = 0.167\pm0.005\pm0.014$ and ${\cal B}(ψ^\prime \to J/ψη) = 0.028\pm0.002\pm0.002$. We also present a measurement of the dipion mass distribution in the decays $ψ^\prime \to J/ψππ$.
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Submitted 15 February, 2005;
originally announced February 2005.
