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Anderson localisation in steady states of microcavity polaritons
Authors:
Thomas J. Sturges,
Mitchell D. Anderson,
Adam Buraczewski,
Morteza Navadeh-Toupchi,
Albert F. Adiyatullin,
Fauzia Jabeen,
Daniel Y. Oberli,
Marcia T. Portella-Oberli,
Magdalena Stobińska
Abstract:
We present an experimental signature of the Anderson localisation of microcavity polaritons, and provide a systematic study of the dependence on disorder strength. We reveal a controllable degree of localisation, as characterised by the inverse-participation ratio, by tuning the positional disorder of arrays of interacting mesas. This constitutes the realisation of disorder-induced localisation in…
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We present an experimental signature of the Anderson localisation of microcavity polaritons, and provide a systematic study of the dependence on disorder strength. We reveal a controllable degree of localisation, as characterised by the inverse-participation ratio, by tuning the positional disorder of arrays of interacting mesas. This constitutes the realisation of disorder-induced localisation in a driven-dissipative system. In addition to being an ideal candidate for investigating localisation in this regime, microcavity polaritons hold promise for low-power, ultra-small devices and their localisation could be used as a resource in quantum memory and quantum information processing.
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Submitted 21 November, 2019; v1 submitted 22 March, 2019;
originally announced March 2019.
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Cross Feshbach resonance
Authors:
M. Navadeh-Toupchi,
N. Takemura,
M. D. Anderson,
D. Y. Oberli,
M. T. Portella-Oberli
Abstract:
Feshbach resonance occurs when a pair of free particles is resonantly coupled to a molecular bound state. In the field of ultracold quantum gases, atomic Feshbach resonances became a usual tool for tailoring atomic interactions opening up many new applications in this field. In a semiconductor microcavity, the Feshbach resonance appears when two lower polaritons are coupled to the molecular biexci…
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Feshbach resonance occurs when a pair of free particles is resonantly coupled to a molecular bound state. In the field of ultracold quantum gases, atomic Feshbach resonances became a usual tool for tailoring atomic interactions opening up many new applications in this field. In a semiconductor microcavity, the Feshbach resonance appears when two lower polaritons are coupled to the molecular biexciton state. Here, we demonstrate the existence of a cross Feshbach resonance for which a pair of polaritons, lower together with upper, effectively couples to the biexciton state. This demonstration is a crucial step towards the efficient generation of entangled photon pairs in a semiconductor microcavity. The existence of a Cross Feshbach resonance establishes the condition to convert a pair of upper and lower polaritons via the biexciton state into two lower polaritons, paving the way for the generation of momentum and polarization entangled photons.
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Submitted 14 March, 2018;
originally announced March 2018.
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Spin anisotropic interactions of lower-polaritons in the vicinity of polaritonic Feshbach resonance
Authors:
N. Takemura,
M. D. Anderson,
M. Navadeh-Toupchi,
D. Y. Oberli,
M. T. Portella-Oberli,
B. Deveaud
Abstract:
We determine experimentally the spinor interaction constants of lower-polaritons $α_1$ and $α_2$ using resonant pump-probe spectroscopy with a spectrally narrow pump pulse. Our experimental findings are analyzed with the Bogoliubov-like theory and mean-field two channel model based on the lower-polariton and biexciton basis. We find an enhancement of the attractive interaction and dissipative nonl…
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We determine experimentally the spinor interaction constants of lower-polaritons $α_1$ and $α_2$ using resonant pump-probe spectroscopy with a spectrally narrow pump pulse. Our experimental findings are analyzed with the Bogoliubov-like theory and mean-field two channel model based on the lower-polariton and biexciton basis. We find an enhancement of the attractive interaction and dissipative nonlinearity of lower-polaritons with anti-parallel spins in the vicinity of the biexciton resonance when the energy of two lower-polaritons approaches energetically that of the biexciton. These observations are consistent with the existence of a scattering resonance between lower-polaritons and biexcitons (polaritonic Feshbach resonance).
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Submitted 12 May, 2017; v1 submitted 31 January, 2017;
originally announced January 2017.
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Coherent and incoherent aspects of polariton dynamics in semiconductor microcavities
Authors:
N. Takemura,
M. D. Anderson,
S. Biswas,
M. Navadeh-Toupchi,
D. Y. Oberli,
M. T. Portella-Oberli,
B. Deveaud
Abstract:
The interaction between coherent polaritons and incoherent excitons plays an important role in polariton physics. Using resonant pump-probe spectroscopy with selective excitation of single polariton branches, we investigate the different dephasing mechanisms responsible for generating a long-lived exciton reservoir. As expected, pum** the upper polariton results in a strong dephasing process tha…
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The interaction between coherent polaritons and incoherent excitons plays an important role in polariton physics. Using resonant pump-probe spectroscopy with selective excitation of single polariton branches, we investigate the different dephasing mechanisms responsible for generating a long-lived exciton reservoir. As expected, pum** the upper polariton results in a strong dephasing process that leads to the generation of a long lived reservoir. Unexpectedly, we observe an efficient reservoir creation while exciting only the lower polariton branch when the detuning is increased towards positive detuning. We propose a simple theoretical model, the polaritonic Bloch equations, to describe the dynamics of the system.
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Submitted 15 November, 2016;
originally announced November 2016.
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2D Fourier Transform Spectroscopy of exciton-polaritons and their interactions
Authors:
N. Takemura,
S. Trebaol,
M. D. Anderson,
V. Kohnle,
Y. Léger,
D. Y. Oberli,
M. T. Portella-Oberli,
B. Deveaud
Abstract:
We investigate polariton-polariton interactions in a semiconductor microcavity through two-dimensional Fourier transform (2DFT) spectroscopy. We observe, in addition to the lower-lower and the upper-upper polariton self-interaction, a lower-upper cross-interaction. This appears as separated peaks in the on-diagonal and off-diagonal part of 2DFT spectra. Moreover, we elucidate the role of the polar…
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We investigate polariton-polariton interactions in a semiconductor microcavity through two-dimensional Fourier transform (2DFT) spectroscopy. We observe, in addition to the lower-lower and the upper-upper polariton self-interaction, a lower-upper cross-interaction. This appears as separated peaks in the on-diagonal and off-diagonal part of 2DFT spectra. Moreover, we elucidate the role of the polariton dispersion through a fine structure in the 2DFT spectrum. Simulations, based on lower-upper polariton basis Gross-Pitaevskii equations including both self and cross-interactions, result in a 2DFT spectra in qualitative agreement with experiments.
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Submitted 5 June, 2015;
originally announced June 2015.
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Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking
Authors:
K. Fredrik Karlsson,
Daniel Y. Oberli,
Marc-André Dupertuis,
Valentina Troncale,
Marcin Byszewski,
Emanuele Pelucchi,
Alok Rudra,
Per Olof Holtz,
E. Kapon
Abstract:
A sequence of photoluminescence spectroscopy based methods are used to rigorously identify and study all the main spectral features (more than thirty emission lines) of site controlled InGaAs/AlGaAs quantum dots (QDs) grown along [111]B in inverted tetrahedral pyramids. The studied QDs reveal signatures of one confined electron level, one heavy-hole-like level and one light-hole-like level. The va…
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A sequence of photoluminescence spectroscopy based methods are used to rigorously identify and study all the main spectral features (more than thirty emission lines) of site controlled InGaAs/AlGaAs quantum dots (QDs) grown along [111]B in inverted tetrahedral pyramids. The studied QDs reveal signatures of one confined electron level, one heavy-hole-like level and one light-hole-like level. The various heavy-light-hole hybrid exciton complexes formed in these QDs are studied by polarization resolved spectroscopy, excitation power dependence, crystal temperature dependence and temporal single photon correlation measurements. The presented approach, which only requires a minimal theoretical input, enables strict spectral identification of the fine structure patterns including weak and spectrally overlap** emission lines. Furthermore, it allows the involved electron-hole and hole-hole exchange interaction energies to be deduced from measurements. Intricate fine structure patterns are qualitatively understood by group theory and shown to be very sensitive to the exact symmetry of the QD. Emission patterns influenced by hole-hole exchange interactions are found to be particularly useful for identifying QDs with high $C_{3v}$ symmetry and for probing symmetry breaking.
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Submitted 15 July, 2014;
originally announced July 2014.
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Coulomb correlations evidenced in the magneto-optical spectra of charged excitons in semiconductor quantum dots
Authors:
D. Y. Oberli,
M. Byszewski,
B. Chalupar,
E. Pelucchi,
A. Rudra,
E. Kapon
Abstract:
The emission spectral pattern of a charged exciton in a semiconductor quantum dot is composed of a quadruplet of linearly polarized lines in the presence of a magnetic field oriented perpendicularly to the direction of the photon momentum. By measuring the Zeeman splittings, we obtain the effective g factors of the carriers and find that the hole g factor is very sensitive to the QD shape asymme…
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The emission spectral pattern of a charged exciton in a semiconductor quantum dot is composed of a quadruplet of linearly polarized lines in the presence of a magnetic field oriented perpendicularly to the direction of the photon momentum. By measuring the Zeeman splittings, we obtain the effective g factors of the carriers and find that the hole g factor is very sensitive to the QD shape asymmetry. By comparing the effective g factors obtained for the neutral and the charged excitons in the same quantum dot, we uncover the role of Coulomb correlations in these excitonic states.
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Submitted 16 January, 2009; v1 submitted 25 November, 2008;
originally announced November 2008.
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Enhancement of the Binding Energy of Charged Excitons in Disordered Quantum Wires
Authors:
T. Otterburg,
D. Y. Oberli,
M. -A. Dupertuis,
N. Moret,
E. Pelucchi,
B. Dwir,
K. Leifer,
E. Kapon
Abstract:
Negatively and positively charged excitons are identified in the spatially-resolved photoluminescence spectra of quantum wires. We demonstrate that charged excitons are weakly localized in disordered quantum wires. As a consequence, the enhancement of the "binding energy" of a charged exciton is caused, for a significant part, by the recoil energy transferred to the remaining charged carrier dur…
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Negatively and positively charged excitons are identified in the spatially-resolved photoluminescence spectra of quantum wires. We demonstrate that charged excitons are weakly localized in disordered quantum wires. As a consequence, the enhancement of the "binding energy" of a charged exciton is caused, for a significant part, by the recoil energy transferred to the remaining charged carrier during its radiative recombination. We discover that the Coulomb correlation energy is not the sole origin of the "binding energy", in contrast to charged excitons confined in quantum dots.
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Submitted 4 October, 2004;
originally announced October 2004.
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Photoluminescence study of V-groove quantum wires: The influence of disorder on the optical spectra and the carrier thermalization
Authors:
D. Y. Oberli,
F. Vouilloz,
R. Ambigapathy,
B. Deveaud,
E. Kapon
Abstract:
We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8K to 200K. We evaluate the relation between photoluminescence excitation and absorption and determine experimentally an optical density in order to analyze the temperature dependence of the p…
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We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8K to 200K. We evaluate the relation between photoluminescence excitation and absorption and determine experimentally an optical density in order to analyze the temperature dependence of the photoluminescence spectra. We find that, at a temperature above 60K, the photoexcited electron-hole pairs reach a thermal equilibrium at the lattice temperature while, at a temperature below about 60K, they do not reach a quasi-equilibrium in the steady-state. Time-resolved photoluminescence studies performed at a carrier density of about 2. 104 cm-1 indicate that, at 60K, a quasi-equilibrium is reached on a time scale of 10 ps. Furthermore, the hot carriers cool in about 100 ps to the lattice temperature. At 8K, however, evidence of a non-thermal carrier distribution is found at the earliest times, which suggests that carriers in extended states are not in thermal equilibrium with carriers in localized states.
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Submitted 1 December, 1999;
originally announced December 1999.
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Excitonic lasing in semiconductor quantum wires
Authors:
L. Sirigu,
D. Y. Oberli,
L. Degiorgi,
A. Rudra,
E. Kapon
Abstract:
Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.
Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.
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Submitted 1 December, 1999;
originally announced December 1999.
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Effect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wires
Authors:
D. Y. Oberli,
M. -A. Dupertuis,
F. Reinhardt,
E. Kapon
Abstract:
We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At low temperatures we find that the measured dependence does not conform to the theoretical prediction for recombination of free excitons in a q…
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We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At low temperatures we find that the measured dependence does not conform to the theoretical prediction for recombination of free excitons in a quasi one-dimensional system due to the major influence of disorder. An extension of the theory is developped in order to take into account exciton ionization and the contribution of free carriers. A mean localization length for excitons is also estimated from the radiative lifetime at 8 K.
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Submitted 4 December, 1998;
originally announced December 1998.
