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Superconductor Electronics Fabrication Process with MoN$_x$ Kinetic Inductors and Self-Shunted Josephson Junctions
Authors:
Sergey K. Tolpygo,
Vladimir Bolkhovsky,
D. E. Oates,
R. Rastogi,
S. Zarr,
A. L. Day,
T. J. Weir,
Alex Wynn,
L. M. Johnson
Abstract:
Recent progress in superconductor electronics fabrication has enabled single-flux-quantum (SFQ) digital circuits with close to one million Josephson junctions (JJs) on 1-cm$^2$ chips. Increasing the integration scale further is challenging because of the large area of SFQ logic cells, mainly determined by the area of resistively shunted Nb/AlO$_x$-Al/Nb JJs and geometrical inductors utilizing mult…
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Recent progress in superconductor electronics fabrication has enabled single-flux-quantum (SFQ) digital circuits with close to one million Josephson junctions (JJs) on 1-cm$^2$ chips. Increasing the integration scale further is challenging because of the large area of SFQ logic cells, mainly determined by the area of resistively shunted Nb/AlO$_x$-Al/Nb JJs and geometrical inductors utilizing multiple layers of Nb. To overcome these challenges, we are develo** a fabrication process with self-shunted high-J$_c$ JJs and compact thin-film MoN$_x$ kinetic inductors instead of geometrical inductors.
We present fabrication details and properties of MoN$_x$ films with a wide range of T$_c$, including residual stress, electrical resistivity, critical current, and magnetic field penetration depth λ$_0$. As kinetic inductors, we implemented Mo$_2$N films with T$_c$ about 8 K, λ$_0$ about 0.51 μm, and inductance adjustable in the range from 2 to 8 pH/sq.
We also present data on fabrication and electrical characterization of Nb-based self-shunted JJs with AlO$_x$ tunnel barriers and J$_c$ = 0.6 mA/μm$^2$, and with 10-nm thick Si$_{1-x}$Nb$_x$ barriers, with x from 0.03 to 0.15, fabricated on 200-mm wafers by co-sputtering. We demonstrate that the electron transport mechanism in Si$_{1-x}$Nb$_x$ barriers at x < 0.08 is inelastic resonant tunneling via chains of multiple localized states. At larger x, their Josephson characteristics are strongly dependent on x and residual stress in Nb electrodes, and in general are inferior to AlO$_x$ tunnel barriers.
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Submitted 8 January, 2018;
originally announced January 2018.
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Advanced Fabrication Processes for Superconducting Very Large Scale Integrated Circuits
Authors:
Sergey K. Tolpygo,
Vladimir Bolkhovsky,
T. J. Weir,
Alex Wynn,
D. E. Oates,
L. M. Johnson,
M. A. Gouker
Abstract:
We review the salient features of two advanced nodes of an 8-Nb-layer fully planarized process developed recently at MIT Lincoln Laboratory for fabricating Single Flux Quantum(SFQ) digital circuits with very large scale integration on 200-mm wafers: the SFQ4ee and SFQ5ee nodes, where 'ee' denotes the process is tuned for energy efficient SFQ circuits. The former has eight superconducting layers wi…
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We review the salient features of two advanced nodes of an 8-Nb-layer fully planarized process developed recently at MIT Lincoln Laboratory for fabricating Single Flux Quantum(SFQ) digital circuits with very large scale integration on 200-mm wafers: the SFQ4ee and SFQ5ee nodes, where 'ee' denotes the process is tuned for energy efficient SFQ circuits. The former has eight superconducting layers with 0.5 μm minimum feature size and a 2 Ω/sq Mo layer for circuit resistors. The latter has nine superconducting layers: eight Nb wiring layers with the minimum feature size of 350 nm and a thin superconducting MoNx layer (Tc ~ 7.5 K) with high kinetic inductance (about 8 pH/sq) for forming compact inductors. A nonsuperconducting (Tc < 2 K) MoNx layer with lower nitrogen content is used for 6 Ω/sq planar resistors for shunting and biasing of Josephson junctions. Another resistive layer is added to form interlayer, sandwich-type resistors of mΩ range for releasing unwanted flux quanta from superconducting loops of logic cells. Both process nodes use Au/Pt/Ti contact metallization for chip packaging. The technology utilizes one layer of Nb/AlOx-Al/Nb JJs with critical current density, Jc of 100 μA/μm^2 and minimum diameter of 700 nm. Circuit patterns are defined by 248-nm photolithography and high density plasma etching. All circuit layers are fully planarized using chemical mechanical planarization (CMP) of SiO2 interlayer dielectric. The following results and topics are presented and discussed: the effect of surface topography under the JJs on the their properties and repeatability, critical current and Jc targeting, effect of hydrogen dissolved in Nb, MoNx properties for the resistor layer and for high kinetic inductance layer, technology of mΩ-range resistors.
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Submitted 10 February, 2016; v1 submitted 16 September, 2015;
originally announced September 2015.
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Nonlinear microwave response of epitaxial YBaCuO films of varying oxygen content on MgO substrates
Authors:
M. A. Hein,
R. G. Humphreys,
P. J. Hirst,
S. H. Park,
D. E. Oates
Abstract:
We have investigated the nonlinear microwave properties of electron-beam coevaporated YBaCuO films on MgO, using stripline resonators at 2.3 GHz and temperatures 1.7-80 K. The oxygen content of the films ranged from strongly underdoped to overdoped. Above 20 K, the nonlinear response of the resonators was dominated by the superconductor. We could establish clear correlations between the nonlinea…
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We have investigated the nonlinear microwave properties of electron-beam coevaporated YBaCuO films on MgO, using stripline resonators at 2.3 GHz and temperatures 1.7-80 K. The oxygen content of the films ranged from strongly underdoped to overdoped. Above 20 K, the nonlinear response of the resonators was dominated by the superconductor. We could establish clear correlations between the nonlinear surface resistance, two-tone intermodulation (IMD), and oxygen content of the films, which indicate that the superconducting order parameter is important for the nonlinearities. An exponential rather than a power-law representation of the nonlinear current-voltage relation would be required to explain our results phenomenologically. Below 20 K, the dielectric loss tangent of MgO dominated the nonlinear response of the resonators. With increasing power, the dissipation losses decreased markedly, accompanied by enhanced IMD. The surface reactance passed through a shallow minimum at about 5 K, independent of power. We attribute these effects to resonant absorption by impurity states in MgO.
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Submitted 14 August, 2002;
originally announced August 2002.
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Recent developments in the characterization of superconducting films by microwaves
Authors:
M. A. Hein,
M. Getta,
S. Kreiskott,
B. Moenter,
H. Piel,
D. E. Oates,
P. J. Hirst,
R. G. Humphreys,
H. N. Lee,
S. H. Moon
Abstract:
We describe and analyze selected surface impedance data recently obtained by different groups on cuprate, ruthenate and diboride superconducting films on metallic and dielectric substrates for fundamental studies and microwave applications. The discussion includes a first review of microwave data on MgB2, the weak-link behaviour of RABiTS-type YBa2Cu3O7-d tapes, and the observation of a strong a…
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We describe and analyze selected surface impedance data recently obtained by different groups on cuprate, ruthenate and diboride superconducting films on metallic and dielectric substrates for fundamental studies and microwave applications. The discussion includes a first review of microwave data on MgB2, the weak-link behaviour of RABiTS-type YBa2Cu3O7-d tapes, and the observation of a strong anomalous power-dependence of the microwave losses in MgO at low temperatures. We demonstrate how microwave measurements can be used to investigate electronic, magnetic, and dielectric dissipation and relaxation in the films and substrates. The impact of such studies reaches from the extraction of microscopic information to the engineering of materials and further on to applications in power systems and communication technology.
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Submitted 21 November, 2001;
originally announced November 2001.
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Nonlinear Dielectric Microwave Losses in MgO Substrates
Authors:
M. A. Hein,
D. E. Oates,
P. J. Hirst,
R. G. Humphreys,
A. V. Velichko
Abstract:
We have investigated the nonlinear surface impedance and two-tone intermodulation distortion of nine epitaxial YBa2Cu3O7-d films on MgO substrates, using stripline resonators, at frequencies f=2.3-11.2GHz and temperatures T=1.7K-Tc. The power dissipation decreased by up to one order of magnitude as the microwave electric field was increased to about 100V/m for T<20 K, while the reactance Xs show…
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We have investigated the nonlinear surface impedance and two-tone intermodulation distortion of nine epitaxial YBa2Cu3O7-d films on MgO substrates, using stripline resonators, at frequencies f=2.3-11.2GHz and temperatures T=1.7K-Tc. The power dissipation decreased by up to one order of magnitude as the microwave electric field was increased to about 100V/m for T<20 K, while the reactance Xs showed only a weak increase. The minimum of the losses correlated with a plateau in the intermodulation signal. The same features were observed for a Nb film on MgO. The anomalous response is due to nonlinear dielectric losses in the substrate, which can be described by defect dipole relaxation.
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Submitted 22 January, 2002; v1 submitted 22 August, 2001;
originally announced August 2001.
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Anomalous Nonlinear Microwave Response of Epitaxial YBa2Cu3O7-x Films on MgO
Authors:
M. A. Hein,
P. J. Hirst,
R. G. Humphreys,
D. E. Oates,
A. V. Velichko
Abstract:
We have investigated the anomalous nonlinear microwave response of epitaxial electron-beam coevaporated YBa2Cu3O7-x films on MgO. The power and temperature dependent surface impedance and two-tone intermodulation distortion were measured in stripline resonators at several frequencies between 2.3 and 11.2 GHz and at temperatures between 1.7 K and Tc. All of the eight films measured to date show a…
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We have investigated the anomalous nonlinear microwave response of epitaxial electron-beam coevaporated YBa2Cu3O7-x films on MgO. The power and temperature dependent surface impedance and two-tone intermodulation distortion were measured in stripline resonators at several frequencies between 2.3 and 11.2 GHz and at temperatures between 1.7 K and Tc. All of the eight films measured to date show a decrease of the surface resistance Rs of up to one order of magnitude as the microwave current is increased up to approximately 1 mA for T < 20 K. The surface reactance Xs showed only a weak increase in the same region. The usual nonlinear increase of Rs and Xs was observed at high currents in the 100-mA range. The minimum of Rs correlates with a pronounced plateau in the third-order intermodulation signal. We have developed a phenomenological two-fluid model, incorporating a microwave current-dependent quasiparticle scattering rate g and normal fraction fn. The model contains only three adjustable parameters. We find good agreement with the measured data for constant fn and a current-dependent scattering rate g whose magnitude increases almost linearly with temperature and frequency. Obvious mechanisms leading to nonlinear microwave response like Josephson coupling across grain boundaries, nonlocal or nonequilibrium effects cannot explain the data. The anomalies could rather reflect the specific charge and spin ordering and transport phenomena in the low-dimensional cuprate superconductors.
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Submitted 31 May, 2001;
originally announced May 2001.
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Observation of Individual Josephson Vortices in YBCO Bicrystal Grain-boundary Junctions
Authors:
H. Xin,
D. E. Oates,
S. Sridhar,
G. Dresselhaus,
M. S. Dresselhaus
Abstract:
The response of YBCO bicrystal grain-boundary junctions to small dc magnetic fields (0 - 10 Oe) has been probed with a low-power microwave (rf) signal of 4.4 GHz in a microwave-resonator setup. Peaks in the microwave loss at certain dc magnetic fields are observed that result from individual Josephson vortices penetrating into the grain-boundary junctions under study. The system is modeled as a…
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The response of YBCO bicrystal grain-boundary junctions to small dc magnetic fields (0 - 10 Oe) has been probed with a low-power microwave (rf) signal of 4.4 GHz in a microwave-resonator setup. Peaks in the microwave loss at certain dc magnetic fields are observed that result from individual Josephson vortices penetrating into the grain-boundary junctions under study. The system is modeled as a long Josephson junction described by the sine-Gordon equation with the appropriate boundary conditions. Excellent quantitative agreement between the experimental data and the model has been obtained. Hysteresis effect of dc magnetic field is also studied and the results of measurement and calculation are compared.
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Submitted 6 March, 2000;
originally announced March 2000.
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Comparison of Power Dependence of Microwave Surface Resistance of Unpatterned and Patterned YBCO Thin Film
Authors:
H. Xin,
D. E. Oates,
A. C. Anderson,
R. L. Slattery,
G. Dresselhaus,
M. S. Dresselhaus
Abstract:
The effect of the patterning process on the nonlinearity of the microwave surface resistance $R_S$ of YBCO thin films is investigated. With the use of a sapphire dielectric resonator and a stripline resonator, the microwave $R_S$ of YBCO thin films was measured before and after the patterning process, as a function of temperature and the rf peak magnetic field in the film. The microwave loss was…
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The effect of the patterning process on the nonlinearity of the microwave surface resistance $R_S$ of YBCO thin films is investigated. With the use of a sapphire dielectric resonator and a stripline resonator, the microwave $R_S$ of YBCO thin films was measured before and after the patterning process, as a function of temperature and the rf peak magnetic field in the film. The microwave loss was also modeled, assuming a $J_{rf}^2$ dependence of $Z_S(J_{rf})$ on current density $J_{rf}$. Experimental and modeled results show that the patterning has no observable effect on the microwave residual $R_S$ or on the power dependence of $R_S$.
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Submitted 3 June, 1999;
originally announced June 1999.
