Showing 1–50 of 55 results for author: O'Reilly, E

Statistical Advantages of Oblique Randomized Decision Trees and Forests

Authors: Eliza O'Reilly

Abstract: This work studies the statistical advantages of using features comprised of general linear combinations of covariates to partition the data in randomized decision tree and forest regression algorithms. Using random tessellation theory in stochastic geometry, we provide a theoretical analysis of a class of efficiently generated random tree and forest estimators that allow for oblique splits along s… ▽ More This work studies the statistical advantages of using features comprised of general linear combinations of covariates to partition the data in randomized decision tree and forest regression algorithms. Using random tessellation theory in stochastic geometry, we provide a theoretical analysis of a class of efficiently generated random tree and forest estimators that allow for oblique splits along such features. We call these estimators oblique Mondrian trees and forests, as the trees are generated by first selecting a set of features from linear combinations of the covariates and then running a Mondrian process that hierarchically partitions the data along these features. Generalization error bounds and convergence rates are obtained for the flexible dimension reduction model class of ridge functions (also known as multi-index models), where the output is assumed to depend on a low dimensional relevant feature subspace of the input domain. The results highlight how the risk of these estimators depends on the choice of features and quantify how robust the risk is with respect to error in the estimation of relevant features. The asymptotic analysis also provides conditions on the selected features along which the data is split for these estimators to obtain minimax optimal rates of convergence with respect to the dimension of the relevant feature subspace. Additionally, a lower bound on the risk of axis-aligned Mondrian trees (where features are restricted to the set of covariates) is obtained proving that these estimators are suboptimal for these linear dimension reduction models in general, no matter how the distribution over the covariates used to divide the data at each tree node is weighted. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Comments: 43 pages, 2 figures

MSC Class: Primary 62G05; secondary 60D05

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

Authors: Cónal Murphy, Eoin P. O'Reilly, Christopher A. Broderick

Abstract: We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band $\mathbf{k} \cdot \mathbf{p}$ Hamiltonian to compute the SL electronic structure, paying careful attention to the identification and mitigation of spurious solutions. The calculated SL eigenstates are used… ▽ More We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band $\mathbf{k} \cdot \mathbf{p}$ Hamiltonian to compute the SL electronic structure, paying careful attention to the identification and mitigation of spurious solutions. The calculated SL eigenstates are used directly to compute spontaneous emission spectra and the radiative recombination coefficient $B$. We elucidate the origin of the relatively large $B$ coefficients in InAs/GaSb SLs which, despite the presence of spatially indirect (type-II-like) carrier confinement, are close to that of bulk InAs and compare favourably to those calculated for mid-infrared type-I pseudomorphic and metamorphic quantum well structures having comparable emission wavelengths. Our analysis explicitly quantifies the roles played by carrier localisation (specifically, partial delocalisation of bound electron states) and miniband formation (specifically, miniband occupation and optical selection rules) in determining the magnitude of $B$ and its temperature dependence. We perform a high-throughput optimisation of the room temperature $B$ coefficient in InAs/GaSb SLs across the 3.5 -- 7 $μ$m wavelength range, quantifying the dependence of $B$ on the relative thickness of the electron-confining InAs and hole-confining GaSb layers. This analysis provides guidance for the growth of optimised SLs for mid-infrared light emitters. Our results, combined with the expected low non-radiative Auger recombination rates in structures having spatially indirect electron and hole confinement, corroborate recently observed high output power in prototype InAs/GaSb SL inter-band cascade light-emitting diodes. △ Less

Submitted 27 October, 2023; originally announced October 2023.

Comments: Published version

Journal ref: J. Phys. D: Appl. Phys. 57, 035103 (2024)

Optimal Regularization for a Data Source

Authors: Oscar Leong, Eliza O'Reilly, Yong Sheng Soh, Venkat Chandrasekaran

Abstract: In optimization-based approaches to inverse problems and to statistical estimation, it is common to augment criteria that enforce data fidelity with a regularizer that promotes desired structural properties in the solution. The choice of a suitable regularizer is typically driven by a combination of prior domain information and computational considerations. Convex regularizers are attractive compu… ▽ More In optimization-based approaches to inverse problems and to statistical estimation, it is common to augment criteria that enforce data fidelity with a regularizer that promotes desired structural properties in the solution. The choice of a suitable regularizer is typically driven by a combination of prior domain information and computational considerations. Convex regularizers are attractive computationally but they are limited in the types of structure they can promote. On the other hand, nonconvex regularizers are more flexible in the forms of structure they can promote and they have showcased strong empirical performance in some applications, but they come with the computational challenge of solving the associated optimization problems. In this paper, we seek a systematic understanding of the power and the limitations of convex regularization by investigating the following questions: Given a distribution, what is the optimal regularizer for data drawn from the distribution? What properties of a data source govern whether the optimal regularizer is convex? We address these questions for the class of regularizers specified by functionals that are continuous, positively homogeneous, and positive away from the origin. We say that a regularizer is optimal for a data distribution if the Gibbs density with energy given by the regularizer maximizes the population likelihood (or equivalently, minimizes cross-entropy loss) over all regularizer-induced Gibbs densities. As the regularizers we consider are in one-to-one correspondence with star bodies, we leverage dual Brunn-Minkowski theory to show that a radial function derived from a data distribution is akin to a ``computational sufficient statistic'' as it is the key quantity for identifying optimal regularizers and for assessing the amenability of a data source to convex regularization. △ Less

Submitted 5 February, 2024; v1 submitted 27 December, 2022; originally announced December 2022.

Raman spectroscopy of group-IV Ge$_{1-x}$Sn$_{x}$ alloys: theory and experiment

Authors: Daniel S. P. Tanner, Sreyan Raha, Jessica Doherty, Subajit Biswas, Justin D. Holmes, Eoin P. O'Reilly, Achintya Singha, Christopher A. Broderick

Abstract: Ge$_{1-x}$Sn$_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here, we present a combined theoretical and experimental analysis of Raman spectroscopy in Ge$_{1-x}$Sn$_{x}$ alloys. We describe liquid-vapour-solid growth and structural characterisation of Ge$_{1-x}$Sn$_{x}$ ($x \leq 8$%) n… ▽ More Ge$_{1-x}$Sn$_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here, we present a combined theoretical and experimental analysis of Raman spectroscopy in Ge$_{1-x}$Sn$_{x}$ alloys. We describe liquid-vapour-solid growth and structural characterisation of Ge$_{1-x}$Sn$_{x}$ ($x \leq 8$%) nanowires displaying high crystalline quality, and investigate the structural and vibrational properties of the nanowires using Raman spectroscopy. Our theoretical analysis is based on a fully analytic anharmonic valence force field (VFF) potential, which describes exactly - i.e. without recourse to numerical fitting - the second-order elastic constants, third-order bulk modulus, selected second- and third-order inner elastic constants and, as a consequence, the zone-centre transverse optical phonon mode frequency and its hydrostatic and axial strain dependence. We compute bulk elastic properties via density functional theory to parametrise the VFF potential for Ge$_{1-x}$Sn$_{x}$ alloys, and apply the VFF potential to explicitly compute the Raman spectra of realistic, disordered Ge$_{1-x}$Sn$_{x}$ alloy supercells. Our atomistic theoretical calculations quantitatively capture: (i) the evolution of the measured Raman spectra with Sn composition $x$, (ii) demonstrate explicitly that the presence of short-range alloy disorder can significantly impact the shift coefficients $a$ and $b$ that respectively describe the dependence of the Raman shift on Sn composition and pseudomorphic strain, (iii) elucidate the origin of the so-called "disorder activated" mode identified in previous experimental investigations, and (iv) allow for detailed atomic-scale interpretation of measured Raman spectra. Overall, our analysis provides insight relevant to the characterisation of this emerging material system. △ Less

Submitted 1 December, 2021; originally announced December 2021.

Spectrahedral Regression

Authors: Eliza O'Reilly, Venkat Chandrasekaran

Abstract: Convex regression is the problem of fitting a convex function to a data set consisting of input-output pairs. We present a new approach to this problem called spectrahedral regression, in which we fit a spectrahedral function to the data, i.e. a function that is the maximum eigenvalue of an affine matrix expression of the input. This method represents a significant generalization of polyhedral (al… ▽ More Convex regression is the problem of fitting a convex function to a data set consisting of input-output pairs. We present a new approach to this problem called spectrahedral regression, in which we fit a spectrahedral function to the data, i.e. a function that is the maximum eigenvalue of an affine matrix expression of the input. This method represents a significant generalization of polyhedral (also called max-affine) regression, in which a polyhedral function (a maximum of a fixed number of affine functions) is fit to the data. We prove bounds on how well spectrahedral functions can approximate arbitrary convex functions via statistical risk analysis. We also analyze an alternating minimization algorithm for the non-convex optimization problem of fitting the best spectrahedral function to a given data set. We show that this algorithm converges geometrically with high probability to a small ball around the optimal parameter given a good initialization. Finally, we demonstrate the utility of our approach with experiments on synthetic data sets as well as real data arising in applications such as economics and engineering design. △ Less

Submitted 27 October, 2021; originally announced October 2021.

MSC Class: Primary 90C22; 90C47; secondary 62G08; 62G20

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Authors: Daniel S. P. Tanner, Christopher A. Broderick, Amy C. Kirwan, Stefan Schulz, Eoin P. O'Reilly

Abstract: Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - employing local density approximation and hybrid Heyd-Scuzeria-Ernzerhof exchange-correlation functionals - we compute the lattice parameters, relaxed and inner elastic constants, and internal strain (Kleinman) parameters… ▽ More Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - employing local density approximation and hybrid Heyd-Scuzeria-Ernzerhof exchange-correlation functionals - we compute the lattice parameters, relaxed and inner elastic constants, and internal strain (Kleinman) parameters for elemental (diamond) group-IV materials and zinc blende IV-IV compounds. Our DFT calculations support a little-known experimental re-evaluation of the $α$-Sn elastic constants, and contradict a recent prediction of dynamic instability in selected IV-IV compounds. DFT-calculated structural and elastic properties are used in conjunction with a recently derived analytical parametrisation of a harmonic valence force field (VFF) [Phys. Rev. B 100, 094112 (2019)] to obtain a complete set of VFF potentials for Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ and Si$_{x}$Ge$_{1-x}$ alloys. The analytical parametrisation exactly reproduces the relaxed elastic constants and Kleinman parameter without recourse to numerical fitting, allowing for accurate and computationally inexpensive lattice relaxation. The accuracy of the VFF potentials is demonstrated via comparison to the results of DFT supercell relaxation for (i) ordered Si (Ge) alloy supercells containing a substitutional C, Ge (Si), Sn or Pb impurity, where comparison is also made to a model analytical VFF, and (ii) disordered Si$_{x}$Ge$_{1-x}$ alloy supercells. The VFF potentials we present enable accurate and computationally inexpensive relaxation of large-scale supercells representing bulk-like group-IV alloys or group-IV heterostructures, providing input to first principles or empirical electronic structure calculations, and enabling structural analysis and calculation of strain fields in heterostructures for device applications. △ Less

Submitted 22 October, 2021; originally announced October 2021.

Minimax Rates for High-Dimensional Random Tessellation Forests

Authors: Eliza O'Reilly, Ngoc Mai Tran

Abstract: Random forests are a popular class of algorithms used for regression and classification. The algorithm introduced by Breiman in 2001 and many of its variants are ensembles of randomized decision trees built from axis-aligned partitions of the feature space. One such variant, called Mondrian forests, was proposed to handle the online setting and is the first class of random forests for which minima… ▽ More Random forests are a popular class of algorithms used for regression and classification. The algorithm introduced by Breiman in 2001 and many of its variants are ensembles of randomized decision trees built from axis-aligned partitions of the feature space. One such variant, called Mondrian forests, was proposed to handle the online setting and is the first class of random forests for which minimax rates were obtained in arbitrary dimension. However, the restriction to axis-aligned splits fails to capture dependencies between features, and random forests that use oblique splits have shown improved empirical performance for many tasks. In this work, we show that a large class of random forests with general split directions also achieve minimax optimal convergence rates in arbitrary dimension. This class includes STIT forests, a generalization of Mondrian forests to arbitrary split directions, as well as random forests derived from Poisson hyperplane tessellations. These are the first results showing that random forest variants with oblique splits can obtain minimax optimality in arbitrary dimension. Our proof technique relies on the novel application of the theory of stationary random tessellations in stochastic geometry to statistical learning theory. △ Less

Submitted 29 October, 2023; v1 submitted 22 September, 2021; originally announced September 2021.

Comments: 26 pages

MSC Class: 60D05; 62G07

Impact of band-anticrossing on band-to-band tunneling in highly-mismatched semiconductor alloys

Authors: Sarita Das, Christopher A. Broderick, Eoin P. O'Reilly

Abstract: We theoretically analyse band-to-band tunneling (BTBT) in highly-mismatched, narrow-gap dilute nitride and bismide alloys, and quantify the impact of the N- or Bi-induced perturbation of the band structure -- due to band-anticrossing (BAC) with localised impurity states -- on the electric field-dependent BTBT generation rate. For this class of semiconductors the assumptions underpinning the widely… ▽ More We theoretically analyse band-to-band tunneling (BTBT) in highly-mismatched, narrow-gap dilute nitride and bismide alloys, and quantify the impact of the N- or Bi-induced perturbation of the band structure -- due to band-anticrossing (BAC) with localised impurity states -- on the electric field-dependent BTBT generation rate. For this class of semiconductors the assumptions underpinning the widely-employed Kane model of direct BTBT break down, due to the strong band edge nonparabolicity resulting from BAC interactions. Via numerical calculations based on the Wentzel-Kramers-Brillouin approximation we demonstrate that BAC leads, at fixed band gap, to reduced (increased) BTBT current at low (high) applied electric fields compared to that in a conventional InAs$_{1-x}$Sb$_{x}$ alloy. Our analysis reveals that BTBT in InN$_{x}$As$_{1-x}$ and InAs$_{1-x}$Bi$_{x}$ is governed by a field-dependent competition between the impact of N (Bi) incorporation on (i) the dispersion of the complex band linking the valence and conduction bands, which dominates at low field strengths, and (ii) the conduction (valence) band edge density of states, which dominates at high field strengths. The implications of our results for applications in avalanche photodiodes and tunneling field-effect transistors are discussed. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

Authors: Oussama Moutanabbir, Simone Assali, Xiao Gong, Eoin O'Reilly, Chris Broderick, Bahareh Marzban, Jeremy Witzens, Wei Du, Shui-Qing Yu, Alexei Chelnokov, Dan Buca, Donguk Nam

Abstract: (Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing seriou… ▽ More (Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing serious limitations that need to be addressed to enable reliable and scalable applications. The main outstanding challenges include the difficulty to grow high crystalline quality layers and heterostructures at the desired Sn content and lattice strain, preserve the material integrity during growth and throughout device processing steps, and control do** and defect density. Other challenges are related to the lack of optimized device designs and predictive theoretical models to evaluate and simulate the fundamental properties and performance of (Si)GeSn layers and heterostructures. This Perspective highlights key strategies to circumvent these hurdles and bring this material system to maturity to create far-reaching new opportunities for Si-compatible infrared photodetectors, sensors, and emitters for applications in free-space communication, infrared harvesting, biological and chemical sensing, and thermal imaging. △ Less

Submitted 8 January, 2021; originally announced January 2021.

Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures

Authors: Elisa Vitiello, Simone Rossi, Christopher A. Broderick, Giorgio Gravina, Andrea Balocchi, Xavier Marie, Eoin P. O'Reilly, Maksym Myronov, Fabio Pezzoli

Abstract: We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dy… ▽ More We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dynamics of the optically-induced carrier population. Our approach singled out that at cryogenic temperatures the effective lifetime of the photogenerated carriers in coherent Ge(1-x)Sn(x) occurs in the sub-ns time scale. Supported by a model estimate of the radiative lifetime, our measurements indicate that carrier recombination is dominated by non-radiative processes. Our results thus provide central information to advance the fundamental understanding of carrier kinetics in this novel direct-gap group-IV material system. Such knowledge can be a step** stone in the quest for the implementation of Ge(1-x)Sn(x)-based functional devices. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 14, 064068 (2020)

Electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings for applications in intermediate-band solar cells

Authors: Reza Arkani, Christopher A. Broderick, Eoin P. O'Reilly

Abstract: We present a theoretical analysis of the electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings (QRs), from the perspective of applications in intermediate band solar cells (IBSCs). We outline the analytical solution of Schrödinger's equation for a cylindrical QR of infinite potential depth, and describe the evolution of the QR ground state with QR morphology. Having used this an… ▽ More We present a theoretical analysis of the electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings (QRs), from the perspective of applications in intermediate band solar cells (IBSCs). We outline the analytical solution of Schrödinger's equation for a cylindrical QR of infinite potential depth, and describe the evolution of the QR ground state with QR morphology. Having used this analytical model to elucidate general aspects of the electronic properties of QRs, we undertake multi-band $\textbf{k} \cdot \textbf{p}$ calculations -- including strain and piezoelectric effects -- for realistic GaAs$_{1-x}$Sb$_{x}$/GaAs QRs. Our $\textbf{k} \cdot \textbf{p}$ calculations confirm that the large type-II band offsets in GaAs$_{1-x}$Sb$_{x}$/GaAs QRs provide strong confinement of holes, and further indicate the presence of resonant (quasi-bound) electron states which localise in the centre of the QR. From the perspective of IBSC design the calculated electronic properties demonstrate several benefits, including (i) large hole ionisation energies, mitigating thermionic emission from the intermediate band, and (ii) electron-hole spatial overlaps exceeding those in conventional GaAs$_{1-x}$Sb$_{x}$/GaAs QDs, with the potential to engineer these overlaps via the QR morphology so as to manage the trade-off between optical absorption and radiative recombination. Overall, our analysis highlights the flexibility offered by the QR geometry from the perspective of band structure engineering, and identifies specific combinations of QR alloy composition and morphology which offer optimised sub-band gap energies for QR-based IBSCs. △ Less

Submitted 10 June, 2020; originally announced June 2020.

Intermittent dilation and its coupling to stress in discontinuous shear thickening suspensions

Authors: Rijan Maharjan, Ethan O'Reilly, Thomas Postiglione, Nikita Klimenko, Eric Brown

Abstract: We investigate dilation-induced surface deformations in a Discontinuous Shear Thickening (DST) suspension to determine the relationship between dilation and stresses in DST. Video is taken at two observation points on the surface of the suspension in a rheometer while shear and normal stresses are measured. A roughened surface of the suspension is observed as particles poke through the liquid-air… ▽ More We investigate dilation-induced surface deformations in a Discontinuous Shear Thickening (DST) suspension to determine the relationship between dilation and stresses in DST. Video is taken at two observation points on the surface of the suspension in a rheometer while shear and normal stresses are measured. A roughened surface of the suspension is observed as particles poke through the liquid-air interface, corresponding to dilation. Dilation events are found to be intermittent and localized spatially. Shear and normal stresses also fluctuate between high- and low-stress states, and dilation is observed frequently in the high stress state. On the other hand, a complete lack of dilation is observed when the stresses remain at low values for a several seconds. Dilation is most prominent while the stresses grow from the low-stress state to the high-stress state, and the dilated region tends to span the entire surface by the end of the stress growth period. Dilation is found only at stresses and shear rates in and above the shear thickening range. These observed relations between surface dilation and stresses confirm that dilation and stresses are coupled in the high-stress state of DST. △ Less

Submitted 29 April, 2020; originally announced April 2020.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. E 103, 012603 (2021)

Stochastic geometry to generalize the Mondrian Process

Authors: Eliza O'Reilly, Ngoc Tran

Abstract: The stable under iterated tessellation (STIT) process is a stochastic process that produces a recursive partition of space with cut directions drawn independently from a distribution over the sphere. The case of random axis-aligned cuts is known as the Mondrian process. Random forests and Laplace kernel approximations built from the Mondrian process have led to efficient online learning methods an… ▽ More The stable under iterated tessellation (STIT) process is a stochastic process that produces a recursive partition of space with cut directions drawn independently from a distribution over the sphere. The case of random axis-aligned cuts is known as the Mondrian process. Random forests and Laplace kernel approximations built from the Mondrian process have led to efficient online learning methods and Bayesian optimization. In this work, we utilize tools from stochastic geometry to resolve some fundamental questions concerning STIT processes in machine learning. First, we show that a STIT process with cut directions drawn from a discrete distribution can be efficiently simulated by lifting to a higher dimensional axis-aligned Mondrian process. Second, we characterize all possible kernels that stationary STIT processes and their mixtures can approximate. We also give a uniform convergence rate for the approximation error of the STIT kernels to the targeted kernels, generalizing the work of [3] for the Mondrian case. Third, we obtain consistency results for STIT forests in density estimation and regression. Finally, we give a formula for the density estimator arising from an infinite STIT random forest. This allows for precise comparisons between the Mondrian forest, the Mondrian kernel and the Laplace kernel in density estimation. Our paper calls for further developments at the novel intersection of stochastic geometry and machine learning. △ Less

Submitted 13 September, 2021; v1 submitted 3 February, 2020; originally announced February 2020.

MSC Class: 60D05; 62G07

Electronic structure evolution in dilute carbide Ge$_{1-x}$C$_{x}$ alloys and implications for device applications

Authors: Christopher A. Broderick, Michael D. Dunne, Daniel S. P. Tanner, Eoin P. O'Reilly

Abstract: We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge$_{1-x}$C$_{x}$. For ordered alloy supercells, we demonstrate that C incorporation strongly perturbs the conduction band (CB) structure by driving hybridisation of $A_{1}$-symmetric linear combinations of Ge states lying close in energy to the CB edge. This leads, in the ult… ▽ More We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge$_{1-x}$C$_{x}$. For ordered alloy supercells, we demonstrate that C incorporation strongly perturbs the conduction band (CB) structure by driving hybridisation of $A_{1}$-symmetric linear combinations of Ge states lying close in energy to the CB edge. This leads, in the ultra-dilute limit, to the alloy CB edge being formed primarily of an $A_{1}$-symmetric linear combination of the L-point CB edge states of the Ge host matrix semiconductor. Our calculations describe the emergence of a "quasi-direct" alloy band gap, which retains a significant admixture of indirect Ge L-point CB edge character. We then analyse the evolution of the electronic structure of realistic (large, disordered) Ge$_{1-x}$C$_{x}$ alloy supercells for C compositions up to $x = 2$%. We show that short-range alloy disorder introduces a distribution of localised states at energies below the Ge CB edge, with these states acquiring minimal direct ($Γ$) character. Our calculations demonstrate strong intrinsic inhomogeneous energy broadening of the CB edge Bloch character, driven by hybridisation between Ge host matrix and C-related localised states. The trends identified by our calculations are markedly different to those expected based on a recently proposed interpretation of the CB structure based on the band anti-crossing model. The implications of our findings for device applications are discussed. △ Less

Submitted 14 November, 2019; originally announced November 2019.

First principles analysis of electronic structure evolution and the indirect- to direct-gap transition in Ge$_{1-x}$Pb$_{x}$ group-IV alloys

Authors: Christopher A. Broderick, Edmond J. O'Halloran, Eoin P. O'Reilly

Abstract: We present a theoretical analysis of electronic structure evolution in the group-IV alloy Ge$_{1-x}$Pb$_{x}$ based on density functional theory. For ordered alloy supercells we demonstrate the emergence of a singlet conduction band (CB) edge state, suggesting the emergence of a direct band gap for Pb compositions as low as $x \approx 1$%. However, application of hydrostatic pressure reveals Pb-ind… ▽ More We present a theoretical analysis of electronic structure evolution in the group-IV alloy Ge$_{1-x}$Pb$_{x}$ based on density functional theory. For ordered alloy supercells we demonstrate the emergence of a singlet conduction band (CB) edge state, suggesting the emergence of a direct band gap for Pb compositions as low as $x \approx 1$%. However, application of hydrostatic pressure reveals Pb-induced hybridisation, with the CB edge state in a Ge$_{63}$Pb$_{1}$ ($x = 1.56$%) supercell retaining primarily indirect (Ge L$_{6c}$) character. For an ordered Ge$_{15}$Pb$_{1}$ ($x = 6.25$%) supercell we find that the CB edge has acquired primarily direct (Ge $Γ_{7c}$) character, confirming the presence of an indirect- to direct-gap transition. The importance of alloy disorder is highlighted by investigating the impact on the electronic structure of the formation of a nearest-neighbour Pb-Pb pair. Having established the importance of short-range disorder, we analyse the electronic structure evolution as a function of $x$ using a series of 128-atom special quasi-random structures (SQSs). Our calculations reveal a strong reduction (increase) of the band gap (spin-orbit splitting energy), by $\approx 100$ meV ($\approx 40$ meV) per % Pb replacing Ge. We find an indirect- to direct-gap transition occurring in a narrow composition range centred about $x \approx 7$%, close to which composition we calculate that the alloy becomes semimetallic. Further analysis suggests that long-range order introduced by Born von Karman (supercell) boundary conditions leads to overestimated energy splitting of the Ge L$_{6c}$-derived CB states in the 128-atom SQSs. Accounting for these finite-size effects, we expect a direct band gap to emerge in Ge$_{1-x}$Pb$_{x}$ for $x \gtrsim 3 - 4$%. △ Less

Submitted 13 November, 2019; originally announced November 2019.

Electronic structure of semiconductor nanostructures: A modified localization landscape theory

Authors: D. Chaudhuri, J. C. Kelleher, M. R. O'Brien, E. P. O'Reilly, S. Schulz

Abstract: In this paper we present a modified localization landscape theory to calculate localized/confined electron and hole states and the corresponding energy eigenvalues without solving a (large) eigenvalue problem. We motivate and demonstrate the benefit of solving $\hat{H}^2u=1$ in the modified localization landscape theory in comparison to $\hat{H}u=1$, solved in the localization landscape theory. We… ▽ More In this paper we present a modified localization landscape theory to calculate localized/confined electron and hole states and the corresponding energy eigenvalues without solving a (large) eigenvalue problem. We motivate and demonstrate the benefit of solving $\hat{H}^2u=1$ in the modified localization landscape theory in comparison to $\hat{H}u=1$, solved in the localization landscape theory. We detail the advantages by fully analytic considerations before targeting the numerical calculation of electron and hole states and energies in III-N heterostructures. We further discuss how the solution of $\hat{H}^2u=1$ is used to extract an effective potential $W$ that is comparable to the effective potential obtained from $\hat{H}u=1$, ensuring that it can for instance be used to introduce quantum corrections to drift-diffusion transport calculations. Overall, we show that the proposed modified localization landscape theory keeps all the benefits of the recently introduced localization landscape theory but further improves factors such as convergence of the calculated energies and the robustness of the method against the chosen integration region for $u$ to obtain the corresponding energies. We find that this becomes especially important for here studied $c$-plane InGaN/GaN quantum wells with higher In contents. All these features make the proposed approach very attractive for calculation of localized states in highly disordered systems, where partitioning the systems into different subregions can be difficult. △ Less

Submitted 31 December, 2019; v1 submitted 16 October, 2019; originally announced October 2019.

Comments: 14 pages, 6 figures

Journal ref: Phys. Rev. B 101, 035430 (2020)

Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals

Authors: Daniel S. P. Tanner, Miguel A. Caro, Stefan Schulz, Eoin P. O'Reilly

Abstract: Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The methods introduced allow easy derivation of valence force field parameters in terms of the Kleinman parameter $ζ$ and bulk properties of zincblende and diamond crystals. We start with a model suited for covalent and weakl… ▽ More Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The methods introduced allow easy derivation of valence force field parameters in terms of the Kleinman parameter $ζ$ and bulk properties of zincblende and diamond crystals. We start with a model suited for covalent and weakly ionic materials, where the valence force field parameters are derived in terms of $ζ$ and the bulk elastic constants $C_{11}$, $C_{12}$, and $C_{44}$. We show that this model breaks down as the material becomes more ionic and specifically when the elastic anisotropy factor $A = 2C_{44}/(C_{11}-C_{12}) > 2$. The analytic model can be stabilised for ionic materials by including Martin's electrostatic terms with effective cation and anion charges in the valence force field model. Inclusion of effective charges determined via the optical phonon mode splitting provides a stable model for all but two of the materials considered (zincblende GaN and AlN). A stable model is obtained for all materials considered by also utilising the inner elastic constant $E_{11}$ to determine the magnitude of the effective charges used in the Coulomb interaction. Test calculations show that the models describe well structural relaxation in superlattices and alloys, and reproduce key phonon band structure features. △ Less

Submitted 29 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 100, 094112 (2019)

Facets of spherical random polytopes

Authors: Gilles Bonnet, Eliza O'Reilly

Abstract: Facets of the convex hull of $n$ independent random vectors chosen uniformly at random from the unit sphere in $\mathbb{R}^d$ are studied. A particular focus is given on the height of the facets as well as the expected number of facets as the dimension increases. Regimes for $n$ and $d$ with different asymptotic behavior of these quantities are identified and asymptotic formulas in each case are e… ▽ More Facets of the convex hull of $n$ independent random vectors chosen uniformly at random from the unit sphere in $\mathbb{R}^d$ are studied. A particular focus is given on the height of the facets as well as the expected number of facets as the dimension increases. Regimes for $n$ and $d$ with different asymptotic behavior of these quantities are identified and asymptotic formulas in each case are established. Extensions of some known results in fixed dimension to the case where dimension tends to infinity are described. △ Less

Submitted 12 August, 2019; originally announced August 2019.

Comments: 29 pages

Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge$_{1-x}$Sn$_{x}$ alloys

Authors: Edmond J. O'Halloran, Christopher A. Broderick, Daniel S. P. Tanner, Stefan Schulz, Eoin P. O'Reilly

Abstract: We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of Ge$_{1-x}$Sn$_{x}$ alloys. Density functional theory calculations incorporating Heyd-Scuseria-Ernzerhof (HSE) and modified Becke-Johnson (mBJ) exchange-correlation functionals are used to perform structural relaxation and electronic str… ▽ More We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of Ge$_{1-x}$Sn$_{x}$ alloys. Density functional theory calculations incorporating Heyd-Scuseria-Ernzerhof (HSE) and modified Becke-Johnson (mBJ) exchange-correlation functionals are used to perform structural relaxation and electronic structure calculations for a series of Ge$_{1-x}$Sn$_{x}$ alloy supercells. Based on HSE calculations, a semi-empirical valence force field (VFF) potential and $sp^{3}s^{\ast}$ tight-binding (TB) Hamiltonian are parametrised. Comparing the HSE, mBJ and TB models, and using the HSE results as a benchmark, we demonstrate that: (i) mBJ calculations provide an accurate first principles description of the electronic structure at reduced computational cost, (ii) the VFF potential is sufficiently accurate to circumvent the requirement to perform first principles structural relaxation, and (iii) TB calculations provide a good quantitative description of the alloy electronic structure in the vicinity of the band edges. Our results also emphasise the importance of Sn-induced band mixing in determining the nature of the conduction band structure of Ge$_{1-x}$Sn$_{x}$ alloys. The theoretical models and benchmark calculations we present inform and enable predictive, computationally efficient and scalable atomistic calculations for disordered alloys and nanostructures. This provides a suitable platform to underpin further theoretical investigations of the properties of this emerging semiconductor alloy. △ Less

Submitted 7 August, 2019; originally announced August 2019.

Hybrid functional study of non-linear elasticity and internal strain in zincblende III-V materials

Authors: Daniel S. P. Tanner, Miguel A. Caro, Stefan Schulz, Eoin P. O'Reilly

Abstract: We investigate the elastic properties of selected zincblende III-V semiconductors. Using hybrid functional density functional theory we calculate the second and third order elastic constants, and first and second-order internal strain tensor components for Ga, In and Al containing III-V compounds. For many of these parameters, there are no available experimental measurements, and this work is the… ▽ More We investigate the elastic properties of selected zincblende III-V semiconductors. Using hybrid functional density functional theory we calculate the second and third order elastic constants, and first and second-order internal strain tensor components for Ga, In and Al containing III-V compounds. For many of these parameters, there are no available experimental measurements, and this work is the first to predict their values. The stricter convergence criteria for the calculation of higher order elastic constants are demonstrated, and arguments are made based on this for extracting these constants via the calculated stresses, rather than the energies, in the context of plane-wave-based calculations. The calculated elastic properties are used to determine the strain regime at which higher order elasticity becomes important by comparing the stresses predicted by a lower and a higher order elasticity theory. Finally, the results are compared with available experimental literature data and previous theory. △ Less

Submitted 11 December, 2018; originally announced December 2018.

Comments: 15 pages, 7 figures

Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range

Authors: Eva Repiso, Christopher A. Broderick, Maria de la Mata, Reza Arkani, Qi Lu, Andrew R. J. Marshall, Sergio I. Molina, Eoin P. O'Reilly, Peter J. Carrington, Anthony Krier

Abstract: We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $μ$m. Photoluminescence (PL) measurements for QWs… ▽ More We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $μ$m. Photoluminescence (PL) measurements for QWs having Sb compositions up to $x = 10$\% demonstrate strong room temperature emission up to 3.4 $μ$m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8-band $\vec{k} \cdot \vec{p}$ Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Our results highlight the potential of type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of mid-infrared light-emitting diodes. △ Less

Submitted 6 November, 2018; originally announced November 2018.

The stochastic geometry of unconstrained one-bit data compression

Authors: François Baccelli, Eliza O'Reilly

Abstract: A stationary stochastic geometric model is proposed for analyzing the data compression method used in one-bit compressed sensing. The data set is an unconstrained stationary set, for instance all of $\mathbb{R}^n$ or a stationary Poisson point process in $\mathbb{R}^n$. It is compressed using a stationary and isotropic Poisson hyperplane tessellation, assumed independent of the data. That is, each… ▽ More A stationary stochastic geometric model is proposed for analyzing the data compression method used in one-bit compressed sensing. The data set is an unconstrained stationary set, for instance all of $\mathbb{R}^n$ or a stationary Poisson point process in $\mathbb{R}^n$. It is compressed using a stationary and isotropic Poisson hyperplane tessellation, assumed independent of the data. That is, each data point is compressed using one bit with respect to each hyperplane, which is the side of the hyperplane it lies on. This model allows one to determine how the intensity of the hyperplanes must scale with the dimension $n$ to ensure sufficient separation of different data by the hyperplanes as well as sufficient proximity of the data compressed together. The results have direct implications in compressive sensing and in source coding. △ Less

Submitted 14 October, 2018; originally announced October 2018.

Comments: 29 pages

MSC Class: Primary: 60D05; Secondary: 68P30; 52A22; 94A34

Thin-shell concentration for zero cells of stationary Poisson mosaics

Authors: Eliza O'Reilly

Abstract: We study the concentration of the norm of a random vector $Y$ uniformly sampled in the centered zero cell of two types of stationary and isotropic random mosaics in $\mathbb{R}^n$ for large dimensions $n$. For a stationary and isotropic Poisson-Voronoi mosaic, $Y$ has a radial and log-concave distribution, implying that ${|Y|}/{\mathbb{E}(|Y|^2)^{\frac{1}{2}}}$ approaches one for large $n$. Assumi… ▽ More We study the concentration of the norm of a random vector $Y$ uniformly sampled in the centered zero cell of two types of stationary and isotropic random mosaics in $\mathbb{R}^n$ for large dimensions $n$. For a stationary and isotropic Poisson-Voronoi mosaic, $Y$ has a radial and log-concave distribution, implying that ${|Y|}/{\mathbb{E}(|Y|^2)^{\frac{1}{2}}}$ approaches one for large $n$. Assuming the cell intensity of the random mosaic scales like $e^{n ρ_n}$, where $\lim_{n \to \infty} ρ_n = ρ$, $|Y|$ is on the order of $\sqrt{n}$ for large $n$. For the Poisson-Voronoi mosaic, we show that $|Y|/\sqrt{n}$ concentrates to $e^{-ρ}(2πe)^{-\frac{1}{2}}$ as $n$ increases, and for a stationary and isotropic Poisson hyperplane mosaic, we show there is a range $(R_{\ell}, R_u)$ such that ${|Y|}/{\sqrt{n}}$ will be within this range with high probability for large $n$. The rates of convergence are also computed in both cases. △ Less

Submitted 4 September, 2019; v1 submitted 11 September, 2018; originally announced September 2018.

Comments: 20 pages

Couplings for determinantal point processes and their reduced Palm distributions with a view to quantifying repulsiveness

Authors: Jesper Møller, Eliza O'Reilly

Abstract: For a determinantal point process $X$ with a kernel $K$ whose spectrum is strictly less than one, Andr{é} Goldman has established a coupling to its reduced Palm process $X^u$ at a point $u$ with $K(u,u)>0$ so that almost surely $X^u$ is obtained by removing a finite number of points from $X$. We sharpen this result, assuming weaker conditions and establishing that $X^u$ can be obtained by removing… ▽ More For a determinantal point process $X$ with a kernel $K$ whose spectrum is strictly less than one, Andr{é} Goldman has established a coupling to its reduced Palm process $X^u$ at a point $u$ with $K(u,u)>0$ so that almost surely $X^u$ is obtained by removing a finite number of points from $X$. We sharpen this result, assuming weaker conditions and establishing that $X^u$ can be obtained by removing at most one point from $X$, where we specify the distribution of the difference $ξ_u:=X\setminus X^u$. This is used for discussing the degree of repulsiveness in DPPs in terms of $ξ_u$, including Ginibre point processes and other specific parametric models for DPPs. △ Less

Submitted 5 October, 2020; v1 submitted 19 June, 2018; originally announced June 2018.

Comments: 18 pages

MSC Class: Primary 60D05; Secondary 60G55; 60K35

Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $μ$m on InP substrates

Authors: Christopher A. Broderick, Wanshu Xiong, Stephen J. Sweeney, Eoin P. O'Reilly, Judy M. Rorison

Abstract: We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering.… ▽ More We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering. Our calculations demonstrate that structures based on compressively strained In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ quantum wells (QWs) can readily achieve emission wavelengths in the 3 -- 5 $μ$m range, and that these QWs have large type-I band offsets. As such, these structures have the potential to overcome a number of limitations commonly associated with this application-rich but technologically challenging wavelength range. By considering structures having (i) fixed QW thickness and variable strain, and (ii) fixed strain and variable QW thickness, we quantify key trends in the properties and performance as functions of the alloy composition, structural properties, and emission wavelength, and on this basis identify routes towards the realisation of optimised devices for practical applications. Our analysis suggests that simple laser structures -- incorporating In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ QWs and unstrained ternary In$_{0.53}$Ga$_{0.47}$As barriers -- which are compatible with established epitaxial growth, provide a route to realising InP-based mid-infrared diode lasers. △ Less

Submitted 14 May, 2018; originally announced May 2018.

Comments: Submitted version

Journal ref: Semicond. Sci. Technol. 33, 094007 (2018)

Three-dimensional Self-assembled Columnar Arrays of AlInP Quantum Wires for Polarized Micron-sized Amber Light Emitting Diodes

Authors: Andrea Pescaglini, Agnieszka Gocalinska, Silviu Bogusevschi, Stefano T. Moroni, Gediminas Juska, Enrica E. Mura, John Justice, Brian Corbett, Eoin O'Reilly, Emanuele Pelucchi

Abstract: A three-dimensional ordered and self-organized semiconductor system emitting highly-polarized light in the yellow-orange visible range (580-650 nm) is presented, comprising self-assembled in-plane AlInP wires vertically stacked in regularly-spaced columns. More than 200 wires per column without detectable defect formation could be stacked. Theoretical simulations and temperature-dependent photolum… ▽ More A three-dimensional ordered and self-organized semiconductor system emitting highly-polarized light in the yellow-orange visible range (580-650 nm) is presented, comprising self-assembled in-plane AlInP wires vertically stacked in regularly-spaced columns. More than 200 wires per column without detectable defect formation could be stacked. Theoretical simulations and temperature-dependent photoluminescence provided a benchmark to engineer multilayered structures showing internal quantum efficiency at room temperature larger than comparable quantum wells emitting at similar wavelengths. Finally, proof-of-concept light emitting diodes (LED) showed a high degree of light polarization and lower surface parasitic currents than comparable quantum well LEDs, providing an interesting perspective for high-efficiency polarized yellow-orange light emitting devices. △ Less

Submitted 12 February, 2018; originally announced February 2018.

Impact of disorder on the optoelectronic properties of GaN$_y$As$_{1-x-y}$Bi$_x$ alloys and heterostructures

Authors: Muhammad Usman, Christopher A. Broderick, Eoin P. O'Reilly

Abstract: We perform a systematic theoretical analysis of the nature and importance of alloy disorder effects on the electronic and optical properties of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys and quantum wells (QWs), using large-scale atomistic supercell electronic structure calculations based on the tight-binding method. Using ordered alloy supercell calculations we also derive and parametrise an extended b… ▽ More We perform a systematic theoretical analysis of the nature and importance of alloy disorder effects on the electronic and optical properties of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys and quantum wells (QWs), using large-scale atomistic supercell electronic structure calculations based on the tight-binding method. Using ordered alloy supercell calculations we also derive and parametrise an extended basis 14-band \textbf{k}$\cdot$\textbf{p} Hamiltonian for GaN$_{y}$As$_{1-x-y}$Bi$_{x}$. Comparison of the results of these models highlights the role played by short-range alloy disorder -- associated with substitutional nitrogen (N) and bismuth (Bi) incorporation -- in determining the details of the electronic and optical properties. Systematic analysis of large alloy supercells reveals that the respective impact of N and Bi on the band structure remain largely independent, a robust conclusion we find to be valid even in the presence of significant alloy disorder where N and Bi atoms share common Ga nearest neighbours. Our calculations reveal that N- (Bi-) related alloy disorder strongly influences the conduction (valence) band edge states, leading in QWs to strong carrier localisation, as well as inhomogeneous broadening and modification of the conventional selection rules for optical transitions. Our analysis provides detailed insight into key properties and trends in this unusual material system, and enables quantitative evaluation of the potential of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys for applications in photonic and photovoltaic devices. △ Less

Submitted 22 June, 2018; v1 submitted 20 December, 2017; originally announced December 2017.

Comments: 29 pages, 11 figures

Journal ref: Phys. Rev. Applied 10, 044024 (2018)

Reach of Repulsion for Determinantal Point Processes in High Dimensions

Authors: François Baccelli, Eliza O'Reilly

Abstract: Goldman [7] proved that the distribution of a stationary determinantal point process (DPP) $Φ$ can be coupled with its reduced Palm version $Φ^{0,!}$ such that there exists a point process $η$ where $Φ= Φ^{0,!} \cup η$ in distribution and $Φ^{0,!} \cap η= \emptyset$. The points of $η$ characterize the repulsive nature of a typical point of $Φ$. In this paper, the first moment measure of $η$ is use… ▽ More Goldman [7] proved that the distribution of a stationary determinantal point process (DPP) $Φ$ can be coupled with its reduced Palm version $Φ^{0,!}$ such that there exists a point process $η$ where $Φ= Φ^{0,!} \cup η$ in distribution and $Φ^{0,!} \cap η= \emptyset$. The points of $η$ characterize the repulsive nature of a typical point of $Φ$. In this paper, the first moment measure of $η$ is used to study the repulsive behavior of DPPs in high dimensions. It is shown that many families of DPPs have the property that the total number of points in $η$ converges in probability to zero as the space dimension $n$ goes to infinity. It is also proved that for some DPPs there exists an $R^*$ such that the decay of the first moment measure of $η$ is slowest in a small annulus around the sphere of radius $\sqrt{n}R^*$. This $R^*$ can be interpreted as the asymptotic reach of repulsion of the DPP. Examples of classes of DPP models exhibiting this behavior are presented and an application to high dimensional Boolean models is given. △ Less

Submitted 25 July, 2018; v1 submitted 9 May, 2017; originally announced May 2017.

Comments: 35 pages

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

Authors: R. Benchamekh, S. Schulz, E. P. O'Reilly

Abstract: We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on key factors that determine the fine-structure splitting in these systems. Using a pure InAs/GaAs quantum dot as a reference system, we show that the combination… ▽ More We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on key factors that determine the fine-structure splitting in these systems. Using a pure InAs/GaAs quantum dot as a reference system, we show that the combination of spin-orbit coupling and biaxial strain effects can lead to sizeable spin-splitting effects in these systems. Then, a realistic alloyed InGaAs/GaAs quantum dot with 25\% InAs content is studied. Our analysis reveals that the impact of random alloy fluctuations on the electronic and optical properties of (111)-oriented InGaAs/GaAs quantum dots reduces strongly as the lateral size of the dot increases and approaches realistic sizes. For instance the optical matrix element shows an almost vanishing anisotropy in the (111)-growth plane. Furthermore, conduction and valence band mixing effects in the system under consideration are strongly reduced compared to standard (100)-oriented InGaAs/GaAs systems. All these factors strongly indicate a reduced fine structure splitting in site-controlled (111)-oriented InGaAs/GaAs quantum dots. Thus, we conclude that quantum dots with realistic (50-80~nm) base length represent promising candidates for polarization entangled photon generation, consistent with recent experimental data. △ Less

Submitted 13 June, 2016; originally announced June 2016.

Random alloy fluctuations and structural inhomogeneities in $c$-plane In$_{x}$Ga$_{1-x}$N quantum wells: theory of ground and excited electron and hole states

Authors: Daniel S. P. Tanner, Miguel A. Caro, Eoin P. O'Reilly, Stefan Schulz

Abstract: We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an atomistic tight-binding model, accounting for variations in strain and built-in field due to random alloy fluctuations. Our analysis reveals strong localisation effects… ▽ More We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an atomistic tight-binding model, accounting for variations in strain and built-in field due to random alloy fluctuations. Our analysis reveals strong localisation effects in the hole states. These effects are found not only in the ground states, but also the excited states. We conclude that localisation effects persist to of order 100~meV into the valence band, for as little as 10\% indium in the quantum well, giving rise to a significant density of localised states. We find, from an examination of the modulus overlap of the wave functions, that the hole states can be divided into three regimes of localisation. Our results also show that localisation effects due to random alloy fluctuations are far less pronounced for electron states. However, the combination of electrostatic built-in field, alloy fluctuations and structural inhomogeneities, such as well-width fluctuations, can nevertheless lead to significant localisation effects in the electron states, especially at higher indium contents. Overall, our results are indicative of individually localised electron and hole states, consistent with the experimentally proposed explanation of time-dependent photoluminescence results in $c$-plane InGaN/GaN QWs. △ Less

Submitted 11 June, 2016; originally announced June 2016.

Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Authors: S. Schulz, D. P. Tanner, E. P. O'Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, P. Dawson

Abstract: In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photo… ▽ More In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems. △ Less

Submitted 1 December, 2015; v1 submitted 23 September, 2015; originally announced September 2015.

Comments: 13 pages, 12 figures

End-to-End Optimization of High Throughput DNA Sequencing

Authors: Eliza O'Reilly, Francois Baccelli, Gustavo de Veciana, Haris Vikalo

Abstract: At the core of high throughput DNA sequencing platforms lies a bio-physical surface process that results in a random geometry of clusters of homogenous short DNA fragments typically hundreds of base pairs long - bridge amplification. The statistical properties of this random process and length of the fragments are critical as they affect the information that can be subsequently extracted, i.e., de… ▽ More At the core of high throughput DNA sequencing platforms lies a bio-physical surface process that results in a random geometry of clusters of homogenous short DNA fragments typically hundreds of base pairs long - bridge amplification. The statistical properties of this random process and length of the fragments are critical as they affect the information that can be subsequently extracted, i.e., density of successfully inferred DNA fragment reads. The ensemble of overlap** DNA fragment reads are then used to computationally reconstruct the much longer target genome sequence, e.g, ranging from hundreds of thousands to billions of base pairs. The success of the reconstruction in turn depends on having a sufficiently large ensemble of DNA fragments that are sufficiently long. In this paper using stochastic geometry we model and optimize the end-to-end process linking and partially controlling the statistics of the physical processes to the success of the computational step. This provides, for the first time, a framework capturing salient features of such sequencing platforms that can be used to study cost, performance or sensitivity of the sequencing process. △ Less

Submitted 4 August, 2015; originally announced August 2015.

MSC Class: 92D20; 60D05; 60K25

Work, heat and entropy production in bipartite quantum systems

Authors: Hoda Hossein-Nejad, Edward J. O'Reilly, Alexandra Olaya-Castro

Abstract: In bipartite quantum systems commutation relations between the Hamiltonian of each subsystem and the interaction impose fundamental constraints on the dynamics of each partition. Here we investigate work, heat and entropy production in bipartite systems characterized by particular commutators between their local Hamiltonians and the interaction operator. We consider the formalism of [Weimer, EPL,… ▽ More In bipartite quantum systems commutation relations between the Hamiltonian of each subsystem and the interaction impose fundamental constraints on the dynamics of each partition. Here we investigate work, heat and entropy production in bipartite systems characterized by particular commutators between their local Hamiltonians and the interaction operator. We consider the formalism of [Weimer, EPL, 83:30008, 2008], in which heat (work) is identified with energy changes that (do not) alter the local von Neumann entropy, as observed in an effective local measurement basis. We demonstrate the consequences of the commutation relations on the work and heat fluxes into each partition, and extend the formalism to open quantum systems where one, or both, partitions are subject to a Markovian thermal bath. We also discuss the relation between heat and entropy in bipartite quantum systems out of thermal equilibrium, and reconcile the aforementioned approach with the second law of thermodynamics. △ Less

Submitted 2 July, 2015; originally announced July 2015.

Comments: 16 pages, 2 figures (to appear in NJP)

Origin of non-linear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory

Authors: Miguel A. Caro, Stefan Schulz, Eoin P. O'Reilly

Abstract: We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductors, {Al,Ga,In}-{N,P,As,Sb}. The results are obtained within the Heyd-Scuseria-Ernzerhof hybrid-functional approach in the framework of density functional theory and the Berry-phase theory of electric polarization. To achieve a meaningful interpretation of the results, we build an intuitive phenomenol… ▽ More We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductors, {Al,Ga,In}-{N,P,As,Sb}. The results are obtained within the Heyd-Scuseria-Ernzerhof hybrid-functional approach in the framework of density functional theory and the Berry-phase theory of electric polarization. To achieve a meaningful interpretation of the results, we build an intuitive phenomenological model based on the description of internal strain and the dynamics of the electronic charge centers. We discuss in detail first- and second-order internal strain effects, together with strain-induced changes in ionicity. This analysis reveals that the relatively large importance in the III-Vs of non-linear piezoelectric effects compared to the linear ones arises because of a delicate balance between the ionic polarization contribution due to internal strain relaxation effects, and the contribution due to the electronic charge redistribution induced by macroscopic and internal strain. △ Less

Submitted 19 February, 2015; originally announced February 2015.

Journal ref: Phys. Rev. B 91, 075203 (2015)

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

Authors: Stefan Schulz, Miguel A. Caro, Conor Coughlan, Eoin P. O'Reilly

Abstract: We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The pres… ▽ More We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties,leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data. △ Less

Submitted 22 January, 2015; originally announced January 2015.

Comments: 14 pages, 10 figures

Journal ref: Phys. Rev. B 91, 035439 (2015)

Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi$_{x}$As$_{1-x}$/GaAs epilayers

Authors: Christopher A. Broderick, Simone Mazzucato, Hélène Carrère, Thierry Amand, Hejer Makhloufi, Alexandre Arnoult, Chantal Fontaine, Omer Donmez, Ayşe Erol, Muhammad Usman, Eoin P. O'Reilly, Xavier Marie

Abstract: The electron Landé g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally app… ▽ More The electron Landé g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally applied magnetic field. The experimental measurements are compared directly to atomistic tight-binding calculations on large supercells, which allows us to explicitly account for alloy disorder effects. We demonstrate that the magnitude of $g^{*}$ increases strongly with increasing Bi composition $x$ and, based on the agreement between the theoretical calculations and experimental measurements, elucidate the underlying causes of the observed variation of $g^{*}$. By performing measurements in which the orientation of the applied magnetic field is changed, we further demonstrate that $g^{*}$ is strongly anisotropic. We quantify the observed variation of $g^{*}$ with $x$, and its anisotropy, in terms of a combination of epitaxial strain and Bi-induced hybridization of valence states due to alloy disorder, which strongly perturbs the electronic structure. △ Less

Submitted 30 September, 2014; originally announced September 2014.

Journal ref: Phys. Rev. B 90, 195301 (2014)

Atomistic tight-binding study of electronic structure and interband optical transitions in GaBi$_{x}$As$_{1-x}$/GaAs quantum wells

Authors: Muhammad Usman, Eoin P. O'Reilly

Abstract: Large-supercell tight-binding calculations are presented for GaBi$_{x}$As$_{1-x}$/GaAs single quantum wells (QWs) with Bi fractions $x$ of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the alloy disorder. A large full-width-half-maximum (FWHM) is estimated in the ground state interband transition energy ($\approx$ 33 meV) at 3.125% Bi, consistent… ▽ More Large-supercell tight-binding calculations are presented for GaBi$_{x}$As$_{1-x}$/GaAs single quantum wells (QWs) with Bi fractions $x$ of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the alloy disorder. A large full-width-half-maximum (FWHM) is estimated in the ground state interband transition energy ($\approx$ 33 meV) at 3.125% Bi, consistent with recent photovoltage measurements for similar Bi compositions. Additionally, the alloy disorder effects are predicted to become more pronounced as the QW width is increased. However, they are less strong at the higher Bi composition (12.5%) required for the design of temperature-stable lasers, with a calculated FWHM of $\approx$ 23.5 meV at $x$=12.5%. △ Less

Submitted 3 February, 2014; originally announced February 2014.

Comments: Accepted for publication in Applied Physics Letters

Journal ref: Applied Physics Letters, 104, 071103, 2014

Derivation of 12- and 14-band $\textbf{k}\cdot\textbf{p}$ Hamiltonians for dilute bismide and bismide-nitride semiconductors

Authors: Christopher A. Broderick, Muhammad Usman, Eoin P. O'Reilly

Abstract: Using an $sp^{3}s^{*}$ tight-binding model we demonstrate how the observed strong bowing of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide alloy GaBi$_{x}$As$_{1-x}$ can be described in terms of a band-anticrossing interaction between the extended states of the GaAs valence band edge and highly localised Bi-related resonant states lying below the GaAs va… ▽ More Using an $sp^{3}s^{*}$ tight-binding model we demonstrate how the observed strong bowing of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide alloy GaBi$_{x}$As$_{1-x}$ can be described in terms of a band-anticrossing interaction between the extended states of the GaAs valence band edge and highly localised Bi-related resonant states lying below the GaAs valence band edge. We derive a 12-band $\textbf{k}\cdot\textbf{p}$ Hamiltonian to describe the band structure of GaBi$_{x}$As$_{1-x}$ and show that this model is in excellent agreement with full tight-binding calculations of the band structure in the vicinity of the band edges, as well as with experimental measurements of the band gap and spin-orbit-splitting across a large composition range. Based on a tight-binding model of GaBi$_{x}$N$_{y}$As$_{1-x-y}$ we show that to a good approximation N and Bi act independently of one another in disordered GaBi$_{x}$N$_{y}$As$_{1-x-y}$ alloys, indicating that a simple description of the band structure is possible. We present a 14-band $\textbf{k}\cdot\textbf{p}$ Hamiltonian for ordered GaBi$_{x}$N$_{y}$As$_{1-x-y}$ crystals which reproduces accurately the essential features of full tight-binding calculations of the band structure in the vicinity of the band edges. The $\textbf{k}\cdot\textbf{p}$ models we present here are therefore ideally suited to the simulation of the optoelectronic properties of these novel III-V semiconductor alloys. △ Less

Submitted 29 October, 2013; originally announced October 2013.

Comments: Accepted for publication in Semiconductor Science and Technology

Journal ref: Semicond. Sci. Technol. 28, 125025 (2013)

Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental study

Authors: S. Schulz, M. A. Caro, L. -T. Tan, P. J. Parbrook, R. W. Martin, E. P. O'Reilly

Abstract: A combined experimental and theoretical study is presented of the band gap of AlInN, confirming the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition dependent bowing parameters for these quantities are extracted. Additionally, composition dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fiel… ▽ More A combined experimental and theoretical study is presented of the band gap of AlInN, confirming the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition dependent bowing parameters for these quantities are extracted. Additionally, composition dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at much lower In composition than expected from a VCA approach. △ Less

Submitted 23 October, 2013; v1 submitted 15 October, 2013; originally announced October 2013.

Comments: 5 pages, 4 figures, 2 tables

Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry adapted $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian

Authors: O. Marquardt, E. P. O'Reilly, S. Schulz

Abstract: In this work, we present and evaluate a (111)-rotated eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented… ▽ More In this work, we present and evaluate a (111)-rotated eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented continuum elasticity model, we employ this approach to investigate the electronic properties of a realistic site-controlled (111)-grown InGaAs quantum dot. We combine these studies with an evaluation of single-band effective mass and eight-band $\mathbf{k}\cdot\mathbf{p}$ models, to investigate the capabilities of these models for the description of electronic properties of (111)-grown zinc-blende quantum dots. Moreover, the influence of second-order piezoelectric contributions on the polarisation potential in such systems is studied. The description of the electronic structure of nanostructures grown on (111)-oriented surfaces can now be achieved with significantly reduced computational costs in comparison to calculations performed using the conventional (001)-oriented models. △ Less

Submitted 11 November, 2013; v1 submitted 14 September, 2013; originally announced September 2013.

Comments: 25 pages, 5 figures

Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides

Authors: Miguel A. Caro, Stefan Schulz, Eoin P. O'Reilly

Abstract: We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal st… ▽ More We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal strain and can be expressed in terms of internal strain parameters. The predictions of the present theory show excellent agreement with a formal Berry phase calculation for random distortions of a test-case CuPt-like InGaN alloy and InGaN supercells with randomly placed cations. While the present level of theory is appropriate for highly ionic compounds, we show that a more complex model is needed for less ionic materials, in which the strain dependence of Born effective charges has to be taken into account. Moreover, we provide ab initio parameters for GaN, InN and AlN, including hybrid functional values for the piezoelectric coefficients and the spontaneous polarization, which we use to accurately implement the local theory expressions. In order to calculate the local polarization potential, we also present a point dipole method. This method overcomes several limitations related to discretization and resolution which arise when obtaining the local potential by solving Poisson's equation on an atomic grid. Finally, we perform tight-binding supercell calculations to assess the impact of the local polarization potential arising from alloy fluctuations on the electronic properties of InGaN alloys. In particular, we find that the large upward bowing with composition of the InGaN valence band edge is strongly influenced by local polarization effects. Furthermore, our analysis allows us to extract composition-dependent bowing parameters for the energy gap and valence and conduction band edges. △ Less

Submitted 5 December, 2013; v1 submitted 12 September, 2013; originally announced September 2013.

Journal ref: Phys. Rev. B 88, 214103 (2013)

12-band $\textbf{k}\cdot\textbf{p}$ model for dilute bismide alloys of (In)GaAs derived from supercell calculations

Authors: Christopher A. Broderick, Muhammad Usman, Eoin P. O'Reilly

Abstract: Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of simple models of the electronic structure of these dilute bismide alloys, which can be used to evaluate their potential as a candidate material system for optical… ▽ More Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of simple models of the electronic structure of these dilute bismide alloys, which can be used to evaluate their potential as a candidate material system for optical applications. Here, we begin by using detailed calculations based on an $sp^{3}s^{*}$ tight-binding model of (In)GaBi$_{x}$As$_{1-x}$ to verify the presence of a valence band-anticrossing interaction in these alloys. Based on the tight-binding model the derivation of a 12-band $\textbf{k}\cdot\textbf{p}$ Hamiltonian for dilute bismide alloys is outlined. We show that the band structure obtained from the 12-band model is in excellent agreement with full tight-binding supercell calculations. Finally, we apply the 12-band model to In$_{0.53}$Ga$_{0.47}$Bi$_{x}$As$_{1-x}$ and compare the calculated variation of the band gap and spin-orbit-splitting to a variety of spectroscopic measurements performed on a series of MBE-grown In$_{0.53}$Ga$_{0.47}$Bi$_{x}$As$_{1-x}$/InP layers. △ Less

Submitted 12 September, 2013; originally announced September 2013.

Journal ref: Phys. Stat. Sol. B 250, 773 (2013)

Impact of cation-based localized electronic states on the conduction and valence band structure of AlInN alloys

Authors: S. Schulz, M. A. Caro, E. P. O'Reilly

Abstract: We demonstrate that cation-related localized states strongly perturb the band structure of $\text{Al}_{1-x}\text{In}_x$N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in $\text{Al}_{1-x}\text{In}_x$N for low In composition, $x$, and that these localized states dom… ▽ More We demonstrate that cation-related localized states strongly perturb the band structure of $\text{Al}_{1-x}\text{In}_x$N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in $\text{Al}_{1-x}\text{In}_x$N for low In composition, $x$, and that these localized states dominate the evolution of the band structure with increasing $x$. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in $\text{Al}_{1-x}\text{In}_x$N. △ Less

Submitted 28 April, 2014; v1 submitted 23 July, 2013; originally announced July 2013.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 104, 172102 (2014)

Broadening of plasmonic resonance due to electron collisions with nanoparticle boundary: quantum-mechanical consideration

Authors: Alexander V. Uskov, Igor E. Protsenko, N. Asger Mortensen, Eoin P. O'Reilly

Abstract: We present a quantum mechanical approach to calculate broadening of plasmonic resonances in metallic nanostructures due to collisions of electrons with the surface of the structure. The approach is applicable if the characteristic size of the structure is much larger than the de Broglie electron wavelength in the metal. The approach can be used in studies of plasmonic properties of both single nan… ▽ More We present a quantum mechanical approach to calculate broadening of plasmonic resonances in metallic nanostructures due to collisions of electrons with the surface of the structure. The approach is applicable if the characteristic size of the structure is much larger than the de Broglie electron wavelength in the metal. The approach can be used in studies of plasmonic properties of both single nanoparticles and arrays of nanoparticles. △ Less

Submitted 17 June, 2013; originally announced June 2013.

Comments: 9 pages

Journal ref: Plasmonics 9, 185 (2014)

Impact of alloy disorder on the band structure of compressively strained GaBiAs

Authors: Muhammad Usman, Christopher A. Broderick, Zahida Batool, Konstanze Hild, Thomas J. C. Hosea, Stephen J. Sweeney, Eoin P. O'Reilly

Abstract: The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E$_g$) accompanied with a large increase in the spin-orbit splitting energy ($\bigtriangleup_{SO}$), leading to the condition that $\bigtriangleup_{SO} > E_g$ which is anticipated to reduce so-called CHSH Auger recombination losses whereby the energy and momentum of a recombining electron-hole pair is gi… ▽ More The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E$_g$) accompanied with a large increase in the spin-orbit splitting energy ($\bigtriangleup_{SO}$), leading to the condition that $\bigtriangleup_{SO} > E_g$ which is anticipated to reduce so-called CHSH Auger recombination losses whereby the energy and momentum of a recombining electron-hole pair is given to a second hole which is excited into the spin-orbit band. We theoretically investigate the electronic structure of experimentally grown GaBi$_x$As$_{1-x}$ samples on (100) GaAs substrates by directly comparing our data with room temperature photo-modulated reflectance (PR) measurements. Our atomistic theoretical calculations, in agreement with the PR measurements, confirm that E$_g$ is equal to $\bigtriangleup_{SO}$ for $\textit{x} \approx$ 9$%$. We then theoretically probe the inhomogeneous broadening of the interband transition energies as a function of the alloy disorder. The broadening associated with spin-split-off transitions arises from conventional alloy effects, while the behaviour of the heavy-hole transitions can be well described using a valence band-anticrossing model. We show that for the samples containing 8.5% and 10.4% Bi the difficulty in identifying a clear light-hole-related transition energy from the measured PR data is due to the significant broadening of the host matrix light-hole states as a result of the presence of a large number of Bi resonant states in the same energy range and disorder in the alloy. We further provide quantitative estimates of the impact of supercell size and the assumed random distribution of Bi atoms on the interband transition energies in GaBi$_{x}$As$_{1-x}$. Our calculations support a type-I band alignment at the GaBi$_x$As$_{1-x}$/GaAs interface, consistent with recent experimental findings. △ Less

Submitted 5 March, 2013; originally announced March 2013.

Journal ref: Phys. Rev. B 87, 115104 (2013)

Non-classicality of the molecular vibrations assisting exciton energy transfer at room temperature

Authors: Edward J. O'Reilly, Alexandra Olaya-Castro

Abstract: Advancing the debate on quantum effects in light-initiated reactions in biology requires clear identification of non-classical features that these processes can exhibit and utilise. Here we show that in prototype dimers present in a variety of photosynthetic antennae, efficient vibration-assisted energy transfer in the subpicosecond timescale and at room temperature can manifest and benefit from n… ▽ More Advancing the debate on quantum effects in light-initiated reactions in biology requires clear identification of non-classical features that these processes can exhibit and utilise. Here we show that in prototype dimers present in a variety of photosynthetic antennae, efficient vibration-assisted energy transfer in the subpicosecond timescale and at room temperature can manifest and benefit from non-classical fluctuations of collective pigment motions. Non-classicality of initially thermalised vibrations is induced via coherent exciton-vibration interactions and is unambiguously indicated by negativities in the phase-space quasi-probability distribution of the effective collective mode coupled to the electronic dynamics. These quantum effects can be prompted upon incoherent input of excitation. Our results therefore suggest that investigation of the non-classical properties of vibrational motions assisting excitation and charge transport, photoreception and chemical sensing processes could be a touchstone for revealing a role for non-trivial quantum phenomena in biology. △ Less

Submitted 9 January, 2014; v1 submitted 29 January, 2013; originally announced January 2013.

Comments: 11 pages, 8 figures

Journal ref: Nature Communications 5, 3012 (2014)

Band engineering in dilute nitride and bismide semiconductor lasers

Authors: Christopher A. Broderick, Muhammad Usman, Stephen J. Sweeney, Eoin P. O'Reilly

Abstract: Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial p… ▽ More Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecomm lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to efficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption. △ Less

Submitted 31 August, 2012; originally announced August 2012.

Comments: 27 pages, 11 figures

Journal ref: Semicond. Sci. Technol. 27, 094011 (2012)

Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

Authors: Muhammad Usman, Christopher A Broderick, Eoin P. O'Reilly

Abstract: The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBiAs alloys results in a large reduction of the band gap energy Eg accompanied by a significant increase of the spin-orbit-splitting energy (delta_SO), leading to an Eg < delta_SO regime for ~10% Bi composition which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBiNAs… ▽ More The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBiAs alloys results in a large reduction of the band gap energy Eg accompanied by a significant increase of the spin-orbit-splitting energy (delta_SO), leading to an Eg < delta_SO regime for ~10% Bi composition which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBiNAs offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp3s* tight binding and 14-band k.p models for the study of the electronic structure of GaBiAs and GaBiNAs alloys. Our results are in good agreement with the available experimental data. △ Less

Submitted 21 August, 2012; originally announced August 2012.

Comments: 2 pages, 1 figure

Journal ref: in proceedings of International Conference on Physics of Semiconductors (ICPS), Zurich, 2012

The fundamental role of quantized vibrations in coherent light harvesting by cryptophyte algae

Authors: Avinash Kolli, Edward J. O'Reilly, Gregory D. Scholes, Alexandra Olaya-Castro

Abstract: The influence of fast vibrations on energy transfer and conversion in natural molecular aggregates is an issue of central interest. This article shows the important role of high-energy quantized vibrations and their non-equilibrium dynamics for energy transfer in photosynthetic systems with highly localized excitonic states. We consider the cryptophyte antennae protein phycoerythrin 545 and show t… ▽ More The influence of fast vibrations on energy transfer and conversion in natural molecular aggregates is an issue of central interest. This article shows the important role of high-energy quantized vibrations and their non-equilibrium dynamics for energy transfer in photosynthetic systems with highly localized excitonic states. We consider the cryptophyte antennae protein phycoerythrin 545 and show that coupling to quantized vibrations which are quasi-resonant with excitonic transitions is fundamental for biological function as it generates non-cascaded transport with rapid and wider spatial distribution of excitation energy. Our work also indicates that the non-equilibrium dynamics of such vibrations can manifest itself in ultrafast beating of both excitonic populations and coherences at room temperature, with time scales in agreement with those reported in experiments. Moreover, we show that mechanisms supporting coherent excitonic dynamics assist coupling to selected modes that channel energy to preferential sites in the complex. We therefore argue that, in the presence of strong coupling between electronic excitations and quantized vibrations, a concrete and important advantage of quantum coherent dynamics is precisely to tune resonances that promote fast and effective energy distribution. △ Less

Submitted 10 October, 2012; v1 submitted 20 March, 2012; originally announced March 2012.

Comments: 16 Pages, 10 figures. Version to appear in The Journal of Chemical Physics

Journal ref: J. Chem. Phys. 137, 174109 (2012)

Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties

Authors: Muhammad Usman, Vittorianna Tasco, Maria Teresa Todaro, Milena De Giorgi, Eoin P. O'Reilly, Gerhard Klimeck, Adriana Passaseo

Abstract: III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to repro… ▽ More III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response. △ Less

Submitted 17 March, 2012; originally announced March 2012.

Comments: 8 pages, 6 figures; accepted for publication in IOP Nanotechnology journal

Journal ref: Nanotechnology 23, 165202, (2012)