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Discovering group dynamics in synchronous time series via hierarchical recurrent switching-state models
Authors:
Michael Wojnowicz,
Preetish Rath,
Eric Miller,
Jeffrey Miller,
Clifford Hancock,
Meghan O'Donovan,
Seth Elkin-Frankston,
Thaddeus Brunye,
Michael C. Hughes
Abstract:
We seek to model a collection of time series arising from multiple entities interacting over the same time period. Recent work focused on modeling individual time series is inadequate for our intended applications, where collective system-level behavior influences the trajectories of individual entities. To address such problems, we present a new hierarchical switching-state model that can be trai…
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We seek to model a collection of time series arising from multiple entities interacting over the same time period. Recent work focused on modeling individual time series is inadequate for our intended applications, where collective system-level behavior influences the trajectories of individual entities. To address such problems, we present a new hierarchical switching-state model that can be trained in an unsupervised fashion to simultaneously explain both system-level and individual-level dynamics. We employ a latent system-level discrete state Markov chain that drives latent entity-level chains which in turn govern the dynamics of each observed time series. Feedback from the observations to the chains at both the entity and system levels improves flexibility via context-dependent state transitions. Our hierarchical switching recurrent dynamical models can be learned via closed-form variational coordinate ascent updates to all latent chains that scale linearly in the number of individual time series. This is asymptotically no more costly than fitting separate models for each entity. Experiments on synthetic and real datasets show that our model can produce better forecasts of future entity behavior than existing methods. Moreover, the availability of latent state chains at both the entity and system level enables interpretation of group dynamics.
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Submitted 26 January, 2024;
originally announced January 2024.
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Impact of random alloy fluctuations on the carrier distribution in multi-color (In,Ga)N/GaN quantum well systems
Authors:
Michael O'Donovan,
Patricio Farrell,
Julien Moatti,
Timo Streckenbach,
Thomas Koprucki,
Stefan Schulz
Abstract:
In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes across the active region of a (In,Ga)N/GaN multi-quantum well based light emitting diode (LED). To do so, an atomistic tight-binding model is employed to account for alloy fluctuations on a microscopic level and the resulting tight-binding energy landscape forms input to a drift-diffusi…
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In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes across the active region of a (In,Ga)N/GaN multi-quantum well based light emitting diode (LED). To do so, an atomistic tight-binding model is employed to account for alloy fluctuations on a microscopic level and the resulting tight-binding energy landscape forms input to a drift-diffusion model. Here, quantum corrections are introduced via localization landscape theory and we show that when neglecting alloy disorder our theoretical framework yields results similar to commercial software packages that employ a self-consistent Schroedinger-Poisson-drift-diffusion solver. Similar to experimental studies in the literature, we have focused on a multi-quantum well system where two of the three wells have the same In content while the third well differs in In content. By changing the order of wells in this multicolor quantum well structure and looking at the relative radiative recombination rates of the different emitted wavelengths, we (i) gain insight into the distribution of carriers in such a system and (ii) can compare our findings to trends observed in experiment. Our results indicate that the distribution of carriers depends significantly on the treatment of the quantum well microstructure. When including random alloy fluctuations and quantum corrections in the simulations, the calculated trends in the relative radiative recombination rates as a function of the well ordering are consistent with previous experimental studies. The results from the widely employed virtual crystal approximation contradict the experimental data. Overall, our work highlights the importance of a careful and detailed theoretical description of the carrier transport in an (In,Ga)N/GaN multi-quantum well system to ultimately guide the design of the active region of III-N-based LED structures.
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Submitted 23 September, 2022;
originally announced September 2022.
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Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems
Authors:
Michael O'Donovan,
Patricio Farrell,
Timo Streckenbach,
Thomas Koprucki,
Stefan Schulz
Abstract:
Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based LED structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N single and multi-quantum well systems. To disentangle hole transport from electron transport and carrier recombination processes, we focus our attention on uni-…
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Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based LED structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N single and multi-quantum well systems. To disentangle hole transport from electron transport and carrier recombination processes, we focus our attention on uni-polar (p-i-p) systems. The calculations employ our recently established multi-scale simulation framework that connects atomistic tight-binding theory with a macroscale drift-diffusion model. In addition to alloy fluctuations, we pay special attention to the impact of quantum corrections on hole transport. Our calculations indicate that results from a virtual crystal approximation present an upper limit for the hole transport in a p-i-p structure in terms of the current-voltage characteristics. Thus we find that alloy fluctuations can have a detrimental effect on hole transport in (In,Ga)N quantum well systems, in contrast to uni-polar electron transport. However, our studies also reveal that the magnitude by which the random alloy results deviate from virtual crystal approximation data depends on several factors, e.g. how quantum corrections are treated in the transport calculations.
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Submitted 2 November, 2021;
originally announced November 2021.
