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Zone-selection effect of photoelectron intensity distributions in a nonsymmorphic system RAlSi (R : Ce and Nd)
Authors:
Yusei Morita,
K. Nakanishi,
T. Iwata,
K. Ohwada,
Y. Nishioka,
T. Kousa,
M. Nurmamat,
K. Yamagami,
A. Kimura,
T. Yamada,
H. Tanida,
Kenta Kuroda
Abstract:
We investigate the electronic structures of noncentrosymmetric Weyl semimetals RAlSi (R: Ce and Nd) using soft x-ray angle-resolved photoemission spectroscopy. We find that the photoelectron intensity distribution observed in the momentum-resolved electronic bands is highly sensitive to the covered Brillouin zone (BZ) due to the zone-selection effect arising from the nonsymmorphic crystal structur…
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We investigate the electronic structures of noncentrosymmetric Weyl semimetals RAlSi (R: Ce and Nd) using soft x-ray angle-resolved photoemission spectroscopy. We find that the photoelectron intensity distribution observed in the momentum-resolved electronic bands is highly sensitive to the covered Brillouin zone (BZ) due to the zone-selection effect arising from the nonsymmorphic crystal structure of RAlSi. Our data reconstruct the photoelectron distributions varied according to the zone-selection effect, and reveal comprehensive information about the electronic band structures reproduced by band calculations. This detailed information enables us to experimentally trace the Weyl-cone dispersion throughout three-dimensional momentum space, providing valuable insights into the unique properties of RAlSi.
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Submitted 7 May, 2024;
originally announced May 2024.
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Prolonged photo-carriers generated in a massive-and-anisotropic Dirac material
Authors:
Munisa Nurmamat,
Yukiaki Ishida,
Ryohei Yori,
Kazuki Sumida,
Siyuan Zhu,
Masashi Nakatake,
Yoshifumi Ueda,
Masaki Taniguchi,
Shik Shin,
Yuichi Akahama,
Akio Kimura
Abstract:
Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic…
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Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic structure above the Fermi level has been successfully observed, and a massive-and-anisotropic Dirac-type dispersions are confirmed; more importantly, we directly observe that the photo-carriers generated across the direct band gap have the life time exceeding 400 ps. Our finding confirms that black phosphorus is a suitable platform for excitonic condensations, and also open an avenue for future applications in broadband mid-infrared BP-based optoelectronic devices.
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Submitted 31 May, 2018;
originally announced May 2018.
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Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface
Authors:
J. Kishi,
Y. Ohtsubo,
T. Nakamura,
K. Yaji,
A. Harasawa,
F. Komori,
S. Shin,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
A. Taleb-Ibrahimi,
M. Nurmamat,
H. Yamane,
S. Ideta,
K. Tanaka,
S. Kimura
Abstract:
One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of…
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One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices.
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Submitted 16 October, 2017; v1 submitted 18 April, 2017;
originally announced April 2017.
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Experimental verification of the surface termination in the topological insulator TlBiSe$_{2}$ using core-level photoelectron spectroscopy and scanning tunneling microscopy
Authors:
Kenta Kuroda,
Mao Ye,
Eike F. Schwier,
Munisa Nurmamat,
Kaito Shirai,
Masashi Nakatake,
Shigenori Ueda,
Koji Miyamoto,
Taichi Okuda,
Hirofumi Namatame,
Masaki Taniguchi,
Yoshifumi Ueda,
Akio Kimura
Abstract:
The surface termination of the promising topological insulator TlBiSe$_{2}$ has been studied by surface and bulk sensitive probes. Our scanning tunneling microscopy has unmasked for the first time the unusual surface morphology of TlBiSe$_{2}$ obtained by cleaving, where islands are formed by residual atoms on the cleaved plane. The chemical condition of these islands was identified using core-lev…
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The surface termination of the promising topological insulator TlBiSe$_{2}$ has been studied by surface and bulk sensitive probes. Our scanning tunneling microscopy has unmasked for the first time the unusual surface morphology of TlBiSe$_{2}$ obtained by cleaving, where islands are formed by residual atoms on the cleaved plane. The chemical condition of these islands was identified using core-level spectroscopy. We observed thallium core-level spectra that are strongly deformed by a surface component in sharp contrast to the other elements. We propose a simple explanation for this behavior by assuming that the sample cleaving breaks the bonding between thallium and selenium atoms, leaving the thallium layer partially covering the selenium layer. These findings will assist the interpretation of future experimental and theoretical studies on this surface.
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Submitted 25 July, 2013;
originally announced July 2013.
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Unoccupied topological surface state in Bi$_{2}$Te$_{2}$Se
Authors:
Munisa Nurmamat,
E. E. Krasovskii,
K. Kuroda,
M. Ye,
K. Miyamoto,
M. Nakatake,
T. Okuda,
H. Namatame,
H. Namatame,
M. Taniguchi,
E. V. Chulkov,
K. A. Kokh,
O. E. Tereshchenko,
A. Kimura
Abstract:
Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi$_2$Te$_2$Se. A strong war** of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied ra…
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Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi$_2$Te$_2$Se. A strong war** of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied range far beyond the Dirac point, where it coexists with the bulk conduction band. This finding sheds light on the spin and charge dynamics over the wide energy range and opens a way to designing opto-spintronic devices.
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Submitted 9 May, 2013;
originally announced May 2013.
