-
Giant exchange splitting in the electronic structure of A-type 2D antiferromagnet CrSBr
Authors:
Matthew D. Watson,
Swagata Acharya,
James E. Nunn,
Laxman Nagireddy,
Dimitar Pashov,
Malte Rösner,
Mark van Schilfgaarde,
Neil R. Wilson,
Cephise Cacho
Abstract:
In the field of 2D magnetic semiconductors, CrSBr has been the focus of research due to its intriguing magnetic, transport and optical properties that have potential to underpin novel devices. Here we present the evolution of the electronic structure of CrSBr from its antiferromagnetic ground state to the paramagnetic phase. The ground state photoemission data, obtained using a novel method to ove…
▽ More
In the field of 2D magnetic semiconductors, CrSBr has been the focus of research due to its intriguing magnetic, transport and optical properties that have potential to underpin novel devices. Here we present the evolution of the electronic structure of CrSBr from its antiferromagnetic ground state to the paramagnetic phase. The ground state photoemission data, obtained using a novel method to overcome sample charging issues, is very well reproduced by $\mathbf{QSG\hat{W}}$ calculations, a self-consistent many-body perturbative approach that computes electronic eigenfunctions in presence of excitonic correlations. The electronic structure is complex at $\mathbfΓ$, but simplifies at the X points of the Brillouin zone where the non-symmorphic lattice symmetry enforces band degeneracies. In the vicinity of these X points, in the deeper-lying valence bands one can identify pairs of states with mainly Br- and S- character. The energy splitting between them is understood as an exchange splitting within the individual layers in which the spins all align, despite the absence of a net magnetic moment in the so-called A-type antiferromagnetic arrangement. By tracing band positions as a function of temperature, we identify that this exchange splitting disappears above $T_N$, alongside a significant increase in the spectral broadening in all states.
△ Less
Submitted 16 March, 2024;
originally announced March 2024.
-
Tunnel junctions based on interfacial 2D ferroelectrics
Authors:
Yunze Gao,
Astrid Weston,
Vladimir Enaldiev,
Eli Castanon,
Wendong Wang,
James E. Nunn,
Amy Carl,
Hugo De Latour,
Xiao Li,
Alex Summerfield,
Andrey Kretinin,
Nicholas Clark,
Neil Wilson,
Vladimir I. Falko,
Roman Gorbachev
Abstract:
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switc…
▽ More
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain map** and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions (FTJ) with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing fabrication of diverse FTJ devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials and its understanding is an important milestone for future development of optoelectronic devices based on sliding ferroelectricity.
△ Less
Submitted 14 March, 2024;
originally announced March 2024.
-
ARPES signatures of few-layer twistronic graphenes
Authors:
J. E. Nunn,
A. McEllistrim,
A. Weston,
A. Garcia-Ruiz,
M. D. Watson,
M. Mucha-Kruczynski,
C. Cacho,
R. Gorbachev,
V. I. Fal'ko,
N. R. Wilson
Abstract:
Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the…
▽ More
Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the twist-dependent ($1^\circ < θ< 8^\circ$) electronic band structure of few-layer graphenes, including twisted bilayer, monolayer-on-bilayer, and double-bilayer graphene (tDBG). Direct comparison is made between experiment and theory, using a hybrid $\textbf{k}\cdot\textbf{p}$ model for interlayer coupling and implementing photon-energy-dependent phase shifts for photo-electrons from consecutive layers to simulate ARPES spectra. Quantitative agreement between experiment and theory is found across twist angles, stacking geometries, and back-gate voltages, validating the models and revealing displacement field induced gap openings in twisted graphenes. However, for tDBG at $θ=1.5\pm0.2^\circ$, close to the predicted magic-angle of $θ=1.3^\circ$, a flat band is found near the Fermi-level with measured bandwidth of $E_w = 31\pm5$ meV. Analysis of the gap between the flat band and the next valence band shows significant deviations between experiment ($Δ_h=46\pm5$meV) and the theoretical model ($Δ_h=5$meV), indicative of the importance of lattice relaxation in this regime.
△ Less
Submitted 4 April, 2023;
originally announced April 2023.
