Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism
Authors:
Jason Lapano,
Lauren Nuckols,
Alessandro R. Mazza,
Yun-Yi Pai,
Jie Zhang,
Ben Lawrie,
Rob G. Moore,
Gyula Eres,
Ho Nyung Lee,
Mao-Hua Du,
T. Zac Ward,
Joon Sue Lee,
William J. Weber,
Yanwen Zhang,
Matthew Brahlek
Abstract:
We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By map** the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn>4.5) it is found that the n =…
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We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By map** the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn>4.5) it is found that the n = 2 MnBi4Te7 phase is stabilized. Transport measurements indicate that the MnBi2Te4 and MnBi4Te7 undergo magnetic transitions around 25 K, and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped MnBi2Te4. Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena.
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Submitted 27 October, 2020;
originally announced October 2020.
Room-temperature ferromagnetic insulating state in highly cation-ordered epitaxial oxide double perovskite
Authors:
Changhee Sohn,
Elizabeth Skoropata,
Yongseong Choi,
Xiang Gao,
Ankur Rastogi,
Amanda Huon,
Michael A. McGuire,
Lauren Nuckols,
Yanwen Zhang,
John W. Freeland,
Daniel Haskel,
Ho Nyung Lee
Abstract:
Ferromagnetic insulators (FMIs) are one of the most important components in develo** dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeR…
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Ferromagnetic insulators (FMIs) are one of the most important components in develo** dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeReO6. In contrast to the known ferromagnetic metallic phase in stoichiometric Sr2FeReO6, a FMI state with a high Curie temperature (Tc~400 K) and a large saturation magnetization (MS~1.8 μB/f.u.) is found in highly cation-ordered Fe-rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe3+-Fe3+ and Fe3+-Re6+ bonding states, which originate from the excess Fe. The emerging FMI state by controlling cations in the epitaxial oxide perovskites opens the door to develo** novel oxide quantum materials & heterostructures.
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Submitted 12 December, 2018;
originally announced December 2018.
