Mechanism of Spin-Orbit Torques in Platinum Oxide Systems
Authors:
Jayshankar Nath,
Alexandru Vladimir Trifu,
Mihai Sebastian Gabor,
Ali Hallal,
Stephane Auffret,
Sebastien Labau,
Aymen Mahjoub,
Edmond Chan,
Avinash Kumar Chaurasiya,
Amrit Kumar Mondal,
Haozhe Yang,
Eva Schmoranzerova,
Mohamed Ali Nsibi,
Isabelle Joumard,
Anjan Barman,
Bernard Pelissier,
Mairbek Chshiev,
Gilles Gaudin,
Ioan Mihai Miron
Abstract:
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of for…
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Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.
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Submitted 13 December, 2021;
originally announced December 2021.
Spin-orbit torques and magnetization switching in perpendicularly magnetized epitaxial Pd/Co2FeAl/MgO structures
Authors:
M. S. Gabor,
T. Petrisor jr.,
M. Nasui,
M. A. Nsibi,
J. Nath,
I. M. Miron
Abstract:
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writ…
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We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.
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Submitted 27 June, 2019;
originally announced June 2019.