Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam
Authors:
U. Kruchonak,
S. Abou El-Azm,
K. Afanaciev,
G. Chelkov,
M. Demichev,
M. Gostkin,
A. Guskov,
E. Firu,
V. Kobets,
A. Leyva,
d,
A. Nozdrin,
S. Porokhovoy,
A. Sheremetyeva,
P. Smolyanskiy,
A. Torres,
A. Tyazhev,
O. Tolbanov,
N. Zamyatin,
A. Zarubin,
A. Zhemchugov
Abstract:
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20…
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The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.
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Submitted 1 June, 2020;
originally announced June 2020.
Measurement of the energy resolution and calibration of hybrid pixel detectors with GaAs:Cr sensor and Timepix readout chip
Authors:
A. P. Butler,
P. H. Butler,
S. T. Bell,
G. A. Chelkov,
D. V. Dedovich,
M. A. Demichev,
V. G. Elkin,
M. I. Gostkin,
S. A. Kotov,
D. A. Kozhevnikov,
U. G. Kruchonak,
A. A. Nozdrin,
S. Yu. Porokhovoy,
I. N. Potrap,
P. I. Smolyanskiy,
M. M. Zakhvatkin,
A. S. Zhemchugov
Abstract:
This paper describes an iterative method of per-pixel energy calibration of hybrid pixel detectors with GaAs:Cr sensor and Timepix readout chip. A convolution of precisely measured spectra of characteristic X-rays of different metals with the resolution and the efficiency of the pixel detector is used for the calibration. The energy resolution of the detector is also measured during the calibratio…
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This paper describes an iterative method of per-pixel energy calibration of hybrid pixel detectors with GaAs:Cr sensor and Timepix readout chip. A convolution of precisely measured spectra of characteristic X-rays of different metals with the resolution and the efficiency of the pixel detector is used for the calibration. The energy resolution of the detector is also measured during the calibration. The use of per-pixel calibration allows to achieve a good energy resolution of the Timepix detector with GaAs:Cr sensor: 8% and 13% at 60 keV and 20 keV, respectively.
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Submitted 14 January, 2015;
originally announced January 2015.
