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Hot Carrier Nanowire Transistors at the Ballistic Limit
Authors:
M. Kumar,
A. Nowzari,
A. R. Persson,
S. Jeppesen,
A. Wacker,
G. Bastard,
R. Wallenberg,
F. Capasso,
V. F. Maisi,
L. Samuelson
Abstract:
We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and subsequent filteri…
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We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electron passing the barrier depends exponentially on the transport length with a mean free path of 200 - 260 nm and reaches ballistic transport regime for the shortest devices with 70 % of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.
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Submitted 11 March, 2024;
originally announced March 2024.
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Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire
Authors:
Sergey Lazarev,
Luca Gelisio,
Young Yong Kim,
Bi Zhaoxia,
Ali Nowzari,
Ivan A. Zaluzhnyy,
Ruslan Khubbutdinov,
Dmitry Dzhigaev,
Arno Jeromin,
Thomas Keller,
Michael Sprung,
Anders Mikkelsen,
Lars Samuelson,
Ivan A. Vartanyants
Abstract:
Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for the…
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Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.
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Submitted 23 August, 2021;
originally announced August 2021.
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Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared
Authors:
Mohammad Karimi,
Magnus Heurlin,
Steven Limpert,
Vishal Jain,
Xulu Zeng,
Irene Geijselaers,
Ali Nowzari,
Ying Fu,
Lars Samuelson,
Heiner Linke,
Magnus T. Borgstrom,
Hakan Pettersson
Abstract:
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavele…
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Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3-20 um is enabled by normal incidence excitation of intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The optical characteristics are explained by the excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors, combined with a non-symmetric potential profile of the discs resulting from synthesis. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed, and how engineered nanowire heterostructures open up new fascinating opportunities for optoelectronics.
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Submitted 10 September, 2017;
originally announced September 2017.
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InP/InAsP Nanowire-based Spatially Separate Absorption and Multiplication Avalanche Photodetectors
Authors:
Vishal Jain,
Magnus Heurlin,
Enrique Barrigon,
Lorenzo Bosco,
Ali Nowzari,
Shishir Shroff,
Virginia Boix,
Mohammad Karimi,
Reza J. Jam,
Alexander Berg,
Lars Samuelson,
Magnus T. Borgström,
Federico Capasso,
Håkan Pettersson
Abstract:
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials…
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Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials required for absorption at 1.3/1.55 um. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures and compatibility with main-stream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The bandgap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires.
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Submitted 3 June, 2017;
originally announced June 2017.
