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Magnetic properties, spin waves and interaction between spin excitations and 2D electrons in interface layer in Y3Fe5O12 / AlOx / GaAs-heterostructures
Authors:
L. V. Lutsev,
A. I. Stognij,
N. N. Novitskii,
V. E. Bursian,
A. Maziewski,
R. Gieniusz
Abstract:
We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of…
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We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of the linewidth ΔH. At the same time, for all samples FMR linewidths are high. Sputtered YIG films have magnetic inhomogeneity, which gives the main contribution to the FMR linewidth. Transistor structures with two-dimensional electron gas (2DEG) channels in AlOx / GaAs interface governed by YIG-film spin excitations are designed. An effective influence of spin excitations on the current flowing through the GaAs 2DEG channel is observed. Light illumination results in essential changes in the FMR spectrum. It is found that an increase of the 2DEG current leads to an inverse effect, which represents essential changes in the FMR spectrum.
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Submitted 27 November, 2017;
originally announced November 2017.
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Amplification of the photocurrent in SiO2(Co)/GaAs heterostructure induced by magnetic field in the avalanche regime
Authors:
V. V. Pavlov,
L. V. Lutsev,
P. A. Usachev,
A. A. Astretsov,
A. I. Stognij,
N. N. Novitskii,
R. V. Pisarev
Abstract:
Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases…
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Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases. The amplification reaches 9.5 for E = 1.50 eV. The effect of the photocurrent amplification is explained by the spin-dependent recombination process at deep impurity centers in GaAs.
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Submitted 29 December, 2012;
originally announced December 2012.
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Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime
Authors:
L. V. Lutsev,
V. V. Pavlov,
P. A. Usachev,
A. A. Astretsov,
A. I. Stognij,
N. N. Novitskii
Abstract:
In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flo…
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In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.
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Submitted 17 September, 2012;
originally announced September 2012.
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Spintronic devices on the base of magnetic nanostructures
Authors:
L. V. Lutsev,
A. I. Stognij,
N. N. Novitskii,
A. S. Shulenkov
Abstract:
Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field…
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Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the channel due to the interaction between spins of Co nanoparticles and electron spins.
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Submitted 8 December, 2011;
originally announced December 2011.
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Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles
Authors:
L. V. Lutsev,
A. I. Stognij,
N. N. Novitskii
Abstract:
We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, a…
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We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, and has the temperature-peak type character. The temperature location of the effect depends on the Co concentration and can be shifted by the applied electrical field. For the SiO${}_2$(Co)/GaAs heterostructure with 71 at.% Co the magnetoresistance reaches 1000 ($10^5$ %) at room temperature. On the contrary, for SiO${}_2$(Co)/Si heterostructures magnetoresistance values are very small (4%) and for SiO${}_2$(Co) films the magnetoresistance has an opposite value. High values of the magnetoresistance effect in SiO${}_2$(Co)/GaAs heterostructures have been explained by magnetic-field-controlled process of impact ionization in the vicinity of the spin-dependent potential barrier formed in the semiconductor near the interface. Kinetic energy of electrons, which pass through the barrier and trigger the avalanche process, is reduced by the applied magnetic field. This electron energy suppression postpones the onset of the impact ionization to higher electric fields and results in the giant magnetoresistance. The spin-dependent potential barrier is due to the exchange interaction between electrons in the accumulation electron layer in the semiconductor and $d$-electrons of Co.
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Submitted 9 May, 2009;
originally announced May 2009.
