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Photonic bound states in the continuum in Si structures with the self-assembled Ge nanoislands
Authors:
Sergey A. Dyakov,
Margarita V. Stepikhova,
Andrey A. Bogdanov,
Alexey V. Novikov,
Dmitry V. Yurasov,
Zakhary F. Krasilnik,
Sergei G. Tikhodeev,
Nikolay A. Gippius
Abstract:
Germanium self-assembled nanoislands and quantum dots are very prospective for CMOS-compatible optoelectronic integrated circuits but their luminescence intensity is still insufficient for many practical applications. Here, we demonstrate experimentally that photoluminescence of Ge nanoislands in silicon photonic crystal slab with hexagonal lattice can be dramatically enhanced due to the involveme…
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Germanium self-assembled nanoislands and quantum dots are very prospective for CMOS-compatible optoelectronic integrated circuits but their luminescence intensity is still insufficient for many practical applications. Here, we demonstrate experimentally that photoluminescence of Ge nanoislands in silicon photonic crystal slab with hexagonal lattice can be dramatically enhanced due to the involvement in the emission process of the bounds states in the continuum. We experimentally demonstrate more than two orders of magnitude peak photoluminescence enhancement and more than one order of magnitude integrated PL enhancement in a photonic crystal slab compared with the non-structured sample area. We theoretically study this effect by the Fourier modal method in the scattering matrix form and demonstrate the appearance of quasi-normal guided modes in our photonic crystal slab. We also describe their symmetry in terms of group theory. Our work paves the way towards a new class of optoelectronic components compatible with silicon technology.
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Submitted 10 June, 2020;
originally announced June 2020.
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Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si
Authors:
A. A. Ezhevskii,
D. V. Guseinov,
A. V. Soukhorukov,
A. V. Novikov,
D. V. Yurasov,
N. S. Gusev
Abstract:
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular depend…
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An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular dependences of the dc voltage for different Py/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we were able to distinguish the planar Hall effect (PHE) and ISHE contributions. The ISHE dc voltage signal was proportional to sinθ*sin2θ product for the structure aligned to the [011] crystal axis and to sinθ*cos2θ for the [100] direction. In addition, the PHE dc voltage was observed for the angles corresponded to the sin2θ dependence. It means that for silicon as a many-valley semiconductor, the scattering of spins due to the spin-orbit potential induced by shallow donor in n-type material is dependent on the orientation of the valley axes relative to the direction of the magnetic field.
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Submitted 20 February, 2020;
originally announced February 2020.
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Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry
Authors:
M. N. Drozdov,
Y. N. Drozdov,
A. Csik,
A. V. Novikov,
K. Vad,
P. A. Yunin,
D. V. Yurasov,
S. F. Belykh,
G. P. Gololobov,
D. V. Suvorov,
A. Tolstogouzov
Abstract:
Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of intensity ratios of GeCs2+/SiCs2+ and 74Ge-/30Si- secondary ions and post-ionized 70Ge+/28Si+ sputtered neutrals with Ge concentration was obtained. The calibration d…
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Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of intensity ratios of GeCs2+/SiCs2+ and 74Ge-/30Si- secondary ions and post-ionized 70Ge+/28Si+ sputtered neutrals with Ge concentration was obtained. The calibration data were used for quantitative depth profiling of [10x(12.3 nm Si0.63Ge0.37/34 nm Si)] structures on Si. Satisfactory compliance of the quantified Ge concentration in SiGe layers with the data measured by high-resolution X-ray diffraction was obtained for both techniques. Both SIMS and SNMS experimental profiles were fitted using the Hofmann mixing-roughness-information depth (MRI) model. In case of TOF-SIMS the quality of the reconstruction was higher than for SNMS since not only the progressing roughening, but also crater effect and other processes unaccounted in the MRI simulation could have significant impact on plasma sputter depth profiling.
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Submitted 6 January, 2017;
originally announced January 2017.
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Enhanced electroweak radiative corrections in SUSY and precision data
Authors:
I. V. Gaidaenko,
A. V. Novikov,
V. A. Novikov,
A. N. Rozanov,
M. I. Vysotsky
Abstract:
Enhanced radiative corrections generated in SUSY extensions of the Standard Model make the fit of the precision data ($Z$-boson decay parameters and $W$-boson mass) worse. This negative effect is washed out for heavy enough squarks due to decoupling property of SUSY models. We find that even for light squarks the enhanced radiative corrections can be small. In this case substantial…
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Enhanced radiative corrections generated in SUSY extensions of the Standard Model make the fit of the precision data ($Z$-boson decay parameters and $W$-boson mass) worse. This negative effect is washed out for heavy enough squarks due to decoupling property of SUSY models. We find that even for light squarks the enhanced radiative corrections can be small. In this case substantial $\tilde{t}_L \tilde{t}_R$ mixing is necessary.
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Submitted 14 July, 1999; v1 submitted 13 December, 1998;
originally announced December 1998.
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Enhanced Electroweak Radiative Corrections in SUSY: Gluon-free Observables
Authors:
I. V. Gaidaenko,
A. V. Novikov,
V. A. Novikov,
A. N. Rozanov,
M. I. Vysotsky
Abstract:
Large top quark mass is responsible for the enhancement of the oblique radiative corrections in SUSY models. We present the analytical formulas for these corrections to the $W$-boson mass $m_W$ and to $Z$ $l^+ l^-$ coupling constants. The comparison with the result of the Standard Model fit is made.
Large top quark mass is responsible for the enhancement of the oblique radiative corrections in SUSY models. We present the analytical formulas for these corrections to the $W$-boson mass $m_W$ and to $Z$ $l^+ l^-$ coupling constants. The comparison with the result of the Standard Model fit is made.
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Submitted 20 April, 1998; v1 submitted 27 March, 1998;
originally announced March 1998.
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Higgs potential bounds on extra quark-lepton generations
Authors:
H. B. Nielsen,
A. V. Novikov,
V. A. Novikov,
M. I. Vysotsky
Abstract:
We consider the bounds for the values of higgs mass $M_H$ and of the mass of the extra quarks and leptons $M_{extra}$ derived from the stability of vacuum and from the absence of Landau pole in Higgs potential. We find that in the case of the absence of new physics up to the GUT scale the bounds for the mass of the 4th generation are so restrictive that the negative result of CDF search for extr…
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We consider the bounds for the values of higgs mass $M_H$ and of the mass of the extra quarks and leptons $M_{extra}$ derived from the stability of vacuum and from the absence of Landau pole in Higgs potential. We find that in the case of the absence of new physics up to the GUT scale the bounds for the mass of the 4th generation are so restrictive that the negative result of CDF search for extra quarks closes the window for fourth generation. In the case of the absence of new physics up to $10^5$ GeV we get weaker but still nontrivial bounds on $M_H$ and $M_{extra}$ as well.
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Submitted 16 November, 1995;
originally announced November 1995.
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A Simple Way to Estimate the Value of $\barα\equivα(m^2_Z)$
Authors:
R. B. Nevzorov,
A. V. Novikov,
M. I. Vysotsky
Abstract:
To obtain the value of electromagnetic coupling constant at $q^2=m^2_Z$, $\barα$, which plays a key role in electroweak physics one has to integrate the cross-section of $e^+e^-$-annihilation into hadrons divided by $(s-m^2_Z)$ over $s$ from threshold to infinity. By combining, for each flavor channel, the contribution of lowest resonance with the perturbative QCD continuum, we obtain…
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To obtain the value of electromagnetic coupling constant at $q^2=m^2_Z$, $\barα$, which plays a key role in electroweak physics one has to integrate the cross-section of $e^+e^-$-annihilation into hadrons divided by $(s-m^2_Z)$ over $s$ from threshold to infinity. By combining, for each flavor channel, the contribution of lowest resonance with the perturbative QCD continuum, we obtain $1/\barα = 128.90\pm 0.06 $ a result which is close to known result obtained with purely experimental inputs, i.e. $1/\barα = 128.87\pm 0.12$.
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Submitted 26 May, 1994;
originally announced May 1994.
