Showing 51–93 of 93 results for author: Novak, V

Observation of a Berry phase anti-dam** spin-orbit torque

Authors: H. Kurebayashi, Jairo Sinova, D. Fang, A. C. Irvine, J. Wunderlich, V. Novak, R. P. Campion, B. L. Gallagher, E. K. Vehstedt, L. P. Zarbo, K. Vyborny, A. J. Ferguson, T. Jungwirth

Abstract: Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative… ▽ More Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-dam** STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-dam** SOT stemming from an analogous Berry phase effect to the SHE. The SOT alone can therefore induce magnetization dynamics based on a scattering-independent principle. The ferromagnetic semiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in the crystal. This allows us to consider a bare ferromagnetic element which eliminates by design any SHE related contribution to the spin torque. We provide an intuitive picture of the Berry phase origin of the anti-dam** SOT and a microscopic modeling of measured data. △ Less

Submitted 8 June, 2013; originally announced June 2013.

Comments: Send to: [email protected]

High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

Authors: M. Wang, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, A. Patanè, R. P. Campion, C. T. Foxon, V. Novak, T. Jungwirth

Abstract: We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical cond… ▽ More We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band. △ Less

Submitted 11 March, 2013; originally announced March 2013.

Comments: 10 pages, 4 figures

Journal ref: Physical Review B 87, 121301 (2013)

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

Authors: D. Petti, E. Albisetti, H. Reichlová, J. Gazquez, M. Varela, M. Molina-Ruiz, A. F. Lopeandía, K. Olejník, V. Novák, I. Fina, B. Dkhil, J. Hayakawa, X. Marti, J. Wunderlich, T. Jungwirth, R. Bertacco

Abstract: Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magn… ▽ More Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Solving and refining novel thin film phases using Cu X-ray radiation: the epitaxy-induced CuMnAs tetragonal phase

Authors: P. Wadley, A. Crespi, J. Gazquez, M. A. Roldan, P. Garcia, V. Novak, R. Campion, T. Jungwirth, C. Rinaldi, X. Marti, V. Holy, C. Frontera, J. Rius

Abstract: We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuKα radiation, only. The capabilities of this technique surpass simple structure refinement and allow solving unknown phases stabilized by substrate-induced stress. We derive the appropriate corrections to transform the measured integrated intensities in… ▽ More We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuKα radiation, only. The capabilities of this technique surpass simple structure refinement and allow solving unknown phases stabilized by substrate-induced stress. We derive the appropriate corrections to transform the measured integrated intensities into structure factors. Data collection was performed entirely on routinely available laboratory diffractometers (CuKα radiation); the subsequent analysis was carried out by single-crystal direct methods (δ recycling procedure) followed by the least-squares refinement of the structural parameters of the unit cell content. We selected an epitaxial thin film of CuMnAs grown on top of a GaAs substrate, which formed a crystal structure with tetragonal symmetry, differing from the bulk material which is orthorhombic. Here we demonstrate the new tetragonal form of epitaxial CuMnAs grown on GaAs substrate and present consistent high-resolution scanning transmission electron microscopy and stoichiometry analyses. △ Less

Submitted 22 January, 2013; originally announced January 2013.

Influence of Magnetic Anisotropy on Laser-induced Precession of Magnetization in Ferromagnetic Semiconductor (Ga,Mn)As

Authors: N. Tesarova, E. Rozkotova, H. Reichlova, P. Maly, V. Novak, M. Cukr, T. Jungwirth, P. Nemec

Abstract: The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also… ▽ More The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also show that the corresponding anisotropy fields can be deduced from the magnetic field dependence of the precession frequency. △ Less

Submitted 5 December, 2012; originally announced December 2012.

Comments: 7 pages, 4 figures

Journal ref: J. Nanosc. Nanotechnol 12, 7477-7481 (2012)

Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al

Authors: K. W. Edmonds, B. L. Gallagher, M. Wang, A. W. Rushforth, O. Makarovsky, A. Patane, R. P. Campion, C. T. Foxon, V. Novak, T. Jungwirth

Abstract: Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario. Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Comments: 6 pages, 2 figures

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As

Authors: P. Nemec, V. Novak, N. Tesarova, E. Rozkotova, H. Reichlova, D. Butkovicova, F. Trojanek, K. Olejnik, P. Maly, R. P. Campion, B. L. Gallagher, Jairo Sinova, T. Jungwirth

Abstract: (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducti… ▽ More (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting do** trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-do** level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible do**s, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing do**, and monotonous do** dependence of the Gilbert dam** constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 5 figures, supplementary information

Experimental observation of the optical spin-orbit torque

Authors: N. Tesarova, P. Nemec, E. Rozkotova, J. Zemen, F. Trojanek, K. Olejnik, V. Novak, P. Maly, T. Jungwirth

Abstract: Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have r… ▽ More Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have reported experimental observation of the optical counterpart of STT in which a circularly polarized pump laser pulse acts as the external polarizer, allowing to study and utilize the phenomenon on several orders of magnitude shorter timescales than in the electric current induced STT. Recently it has been theoretically proposed and experimentally demonstrated that in the absence of an external polarizer, carriers in a magnet under applied electric field can develop a non-equilibrium spin polarization due to the relativistic spin-orbit coupling, resulting in a current induced spin-orbit torque (SOT) acting on the magnetization. In this paper we report the observation of the optical counterpart of SOT. At picosecond time-scales, we detect excitations of magnetization of a ferromagnetic semiconductor (Ga,Mn)As which are independent of the polarization of the pump laser pulses and are induced by non-equilibrium spin-orbit coupled photo-holes. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 4 figure, supplementary information. arXiv admin note: text overlap with arXiv:1101.1049

Investigation of Optical Spin Transfer Torque in Ferromagnetic Semiconductor GaMnAs by Magneto-Optical Pump-and-Probe Method

Authors: Eva Rozkotova, Petr Nemec, Nada Tesarova, Frantisek Trojanek, Petr Maly, Vit Novak, Tomas Jungwirth

Abstract: We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization, was predicted theoretically in 2004 and observed experimentally by our group in 2012. In this paper we provide experimental details about the observation of OSTT… ▽ More We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization, was predicted theoretically in 2004 and observed experimentally by our group in 2012. In this paper we provide experimental details about the observation of OSTT by a time-resolved pump-and-probe magneto-optical technique. In particular, we show that the precession of magnetization due to OSTT can be experimentally separated from that induced by the well known magnetic-anisotropy-related mechanism in a hybrid structure piezo-stressor/(Ga,Mn)As with an in situ electrical control of the magnetic anisotropy. We also illustrate that OSTT is clearly apparent in the measured dynamical magneto-optical signal in a large variety of (Ga,Mn)As samples with a Mn concentration from 3% to 9%. △ Less

Submitted 2 March, 2012; originally announced March 2012.

Comments: 4 pages, 5 figures

Experimental observation of the optical spin transfer torque

Authors: P. Nemec, E. Rozkotova, N. Tesarova, F. Trojanek, E. De Ranieri, K. Olejnik, J. Zemen, V. Novak, M. Cukr, P. Maly, T. Jungwirth

Abstract: The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical… ▽ More The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical excitations of magnetic systems by laser pulses have been a separate research field whose aim is to explore magnetization dynamics at short time scales and enable ultrafast spintronic devices. We report the experimental observation of the optical spin transfer torque, predicted theoretically several years ago building the bridge between these two fields of spintronics research. In a pump-and-probe optical experiment we measure coherent spin precession in a (Ga,Mn)As ferromagnetic semiconductor excited by circularly polarized laser pulses. During the pump pulse, the spin angular momentum of photo-carriers generated by the absorbed light is transferred to the collective magnetization of the ferromagnet. We interpret the observed optical spin transfer torque and the magnetization precession it triggers on a quantitative microscopic level. Bringing the spin transfer physics into optics introduces a fundamentally distinct mechanism from the previously reported thermal and non-thermal laser excitations of magnets. Bringing optics into the field of spin transfer torques decreases by several orders of magnitude the timescales at which these phenomena are explored and utilized. △ Less

Submitted 6 January, 2012; originally announced January 2012.

Comments: 11 pages, 4 figures

Journal ref: Nature Physics 8, 411-415 (2012)

Direct measurement of the three dimensional magnetization vector trajectory in GaMnAs by a magneto-optical pump-and-probe method

Authors: N. Tesarova, P. Nemec, E. Rozkotova, J. Subrt, H. Reichlova, D. Butkovicova, F. Trojanek, P. Maly, V. Novak, T. Jungwirth

Abstract: We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experi… ▽ More We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experimental method utilizes different polarization dependences of the polar Kerr effect and magnetic linear dichroism to disentangle the pump-induced out-of-plane and in-plane motions of magnetization, respectively. We demonstrate that the method is sensitive enough to allow for the determination of small angle excitations of the magnetization in GaMnAs. The method is readily applicable to other magnetic materials with sufficiently strong circular and linear magneto-optical effects. △ Less

Submitted 5 January, 2012; originally announced January 2012.

Comments: main paper: 7 pages, 3 figures; supplementary information: 11 pages, 6 figures

Journal ref: Appl. Phys. Lett. 100, 102403 (2012)

An in-vacuum diffractometer for resonant elastic soft x-ray scattering

Authors: D. G. Hawthorn, F. He, L. Venema, H. Davis, A. J. Achkar, J. Zhang, R. Sutarto, H. Wadati, A. Radi, T. Wilson, G. Wright, K. M. Shen, J. Geck, H. Zhang, V. Novak, G. A. Sawatzky

Abstract: We describe the design, construction and performance of a 4-circle in-vacuum diffractometer for resonant elastic soft x-ray scattering and reflectivity. The diffractometer, installed on the REIXS beamline at the Canadian Light Source, includes 9 in-vacuum motions driven by in-vacuum stepper motors and operates in ultra-high vacuum at base pressure of 2 x10^-10 Torr. Cooling to a base temperature o… ▽ More We describe the design, construction and performance of a 4-circle in-vacuum diffractometer for resonant elastic soft x-ray scattering and reflectivity. The diffractometer, installed on the REIXS beamline at the Canadian Light Source, includes 9 in-vacuum motions driven by in-vacuum stepper motors and operates in ultra-high vacuum at base pressure of 2 x10^-10 Torr. Cooling to a base temperature of 18 K is provided with a closed-cycle cryostat. The diffractometer includes a choice of 3 photon detectors: a photodiode, a channeltron and a 2D sensitive channelplate detector. Along with variable slit and filter options, these detectors are suitable for studying a wide range of phenomena having both weak and strong diffraction signals. Example measurements of diffraction and reflectivity in Nd-doped (La,Sr)_2CuO_4 and thin film (Ga,Mn)As are shown. △ Less

Submitted 19 May, 2011; originally announced May 2011.

Comments: 9 pages, 8 figures

Journal ref: Rev. Sci. Instrum. 82, 073104 (2011)

Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers

Authors: L. Horák, J. Matějová, X. Martí, V. Holý, V. Novák, Z. Šobáň, S. Mangold, F. Jiménez-Villacorta

Abstract: Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of a Mn-rich surface layer and a saturation of this layer causes an inhibition of the out-diffusion. We combine high-resolution x-ray diffraction with x-ray absorption spectroscopy and a numerical solution of the diffusion… ▽ More Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of a Mn-rich surface layer and a saturation of this layer causes an inhibition of the out-diffusion. We combine high-resolution x-ray diffraction with x-ray absorption spectroscopy and a numerical solution of the diffusion problem for the study of the out-diffusion of Mn interstitials during a sequence of annealing steps. Our data demonstrate that the out-diffusion of the interstitials is substantially affected by the internal electric field caused by an inhomogeneous distribution of charges in the (Ga,Mn)As layer. △ Less

Submitted 4 May, 2011; originally announced May 2011.

Comments: 11 pages, 5 figures

From laterally modulated two-dimensional electron gas towards artificial graphene

Authors: L. Nadvornik, M. Orlita, N. A. Goncharuk, L. Smrcka, V. Novak, V. Jurka, K. Hruska, Z. Vyborny, Z. R. Wasilewski, M. Potemski, K. Vyborny

Abstract: Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral… ▽ More Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems. △ Less

Submitted 16 December, 2011; v1 submitted 28 April, 2011; originally announced April 2011.

Journal ref: New J. Phys. 14, 053002 (2012)

CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets

Authors: F. Maca, J. Masek, O. Stelmakhovych, X. Marti, K. Uhlirova, P. Beran, H. Reichlova, P. Wadley, V. Novak, T. Jungwirth

Abstract: We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from… ▽ More We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor. We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is present in both the metastable semi-Heusler and the stable orthorhombic crystal structures. On the other hand, the orthorhombic phase is crucial for the high Néel temperature. Results of X-ray diffraction, magnetization, transport, and neutron diffraction measurements we performed on chemically synthesized CuMnAs are consistent with the theory predictions. △ Less

Submitted 25 February, 2011; originally announced February 2011.

Comments: 7 pages, 10 figures

Non-thermal laser induced precession of magnetization in ferromagnetic semiconductor (Ga,Mn)As

Authors: P. Nemec, E. Rozkotova, N. Tesarova, F. Trojanek, K. Olejnik, J. Zemen, V. Novak, M. Cukr, P. Maly, T. Jungwirth

Abstract: Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has… ▽ More Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has remained one of the outstanding unresolved problems in the research of ferromagnetic semiconductors to date. Here we demonstrate that coherent magnetization dynamics can be excited in (Ga,Mn)As non-thermally by a transfer of angular momentum from circularly polarized femtosecond laser pulses and by a combination of non-thermal and thermal effects due to a transfer of energy from laser pulses. The thermal effects can be completely suppressed in piezo-electrically controlled samples. Our work is based on pump-and-probe measurements in a large set of (Ga,Mn)As epilayers and on systematic analysis of circular and linear magneto-optical coefficients. We provide microscopic theoretical interpretation of the experimental results. △ Less

Submitted 5 January, 2011; originally announced January 2011.

Comments: 14 pages, 4 figures, plus supplementary material

Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

Authors: M. Kopecky, J. Kub, F. Maca, J. Masek, O. Pacherova, B. L. Gallagher, R. P. Campion, V. Novak, T. Jungwirth

Abstract: We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional c… ▽ More We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional calculations evidence an attraction of Mn_Ga impurities to the stacking faults. We argue that the enhanced Mn density along the common [1-10] direction of the stacking fault planes produces sufficiently strong [110]/[1-10] symmetry breaking mechanism to account for the in-plane uniaxial magnetocrystalline anisotropy of these ferromagnetic semiconductors. △ Less

Submitted 21 December, 2010; originally announced December 2010.

Comments: 4 pages, 4 figures

Molecular Beam Epitaxy of LiMnAs

Authors: V. Novak, M. Cukr, Z. Soban, T. Jungwirth, X. Marti, V. Holy, P. Horodyska, P. Nemec

Abstract: We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date. We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date. △ Less

Submitted 3 September, 2010; originally announced September 2010.

Comments: 8 pages, 5 figures

Spin Hall effect transistor

Authors: J. Wunderlich, B. G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, Jairo Sinova, T. Jungwirth

Abstract: Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transis… ▽ More Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel. △ Less

Submitted 17 August, 2010; originally announced August 2010.

Comments: 11 pages, 3 figures

Systematic study of Mn-do** trends in optical properties of (Ga,Mn)As

Authors: T. Jungwirth, P. Horodyska, N. Tesarova, P. Nemec, J. Subrt, P. Maly, P. Kuzel, C. Kadlec, J. Masek, I. Nemec, V. Novak, K. Olejnik, Z. Soban, P. Vasek, P. Svoboda, Jairo Sinova

Abstract: We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption… ▽ More We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-do**. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-do**. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band. △ Less

Submitted 27 July, 2010; originally announced July 2010.

Comments: 22 pages, 14 figures

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

Authors: J. Masek, F. Maca, J. Kudrnovsky, O. Makarovsky, L. Eaves, R. P. Campion, K. W. Edmonds, A. W. Rushforth, C. T. Foxon, B. L. Gallagher, V. Novak, Jairo Sinova, T. Jungwirth

Abstract: We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor;… ▽ More We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire do** range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As. △ Less

Submitted 27 July, 2010; originally announced July 2010.

Comments: 29 pages, 25 figures

Strain control of magnetic anisotropy in (Ga,Mn)As microbars

Authors: C. King, J. Zemen, K. Olejník, L. Horák, J. Haigh, V. Novák, J. Kučera, V. Holý, R. P. Campion, B. L. Gallagher, T. Jungwirth

Abstract: We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement wi… ▽ More We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement with finite element simulations. SQUID magnetization measurements are performed to study the control of magnetic anisotropy in (Ga,Mn)As by the lithographically induced strain relaxation of the microbars. Microscopic theoretical modeling of the anisotropy is performed based on the mean-field kinetic-exchange model of the ferromagnetic spin-orbit coupled band structure of (Ga,Mn)As. Based on the overall agreement between experimental data and theoretical modeling we conclude that the micropatterning induced anisotropies are of the magnetocrystalline, spin-orbit coupling origin. △ Less

Submitted 16 July, 2010; originally announced July 2010.

Comments: 11 pages, 18 figures

Antiferromagnetic I-Mn-V semiconductors

Authors: T. Jungwirth, V. Novak, X. Marti, M. Cukr, F. Maca, A. B. Shick, J. Masek, P. Horodyska, P. Nemec, V. Holy, J. Zemek, P. Kuzel, I. Nemec, B. L. Gallagher, R. P. Campion, C. T. Foxon, J. Wunderlich

Abstract: After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's basic materials paradigm by looking beyond ferromagnets. Recent studies of relativistic magnetic and magnetotransport anisotropy effects, which in principle ar… ▽ More After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's basic materials paradigm by looking beyond ferromagnets. Recent studies of relativistic magnetic and magnetotransport anisotropy effects, which in principle are equally well present in materials with ferromagnetically and antiferromagnetically ordered spins, have inspired our search for antiferromagnetic semiconductors suitable for high-temperature spintronics. Since these are not found among the magnetic counterparts of common III-V or II-VI semi- conductors, we turn the attention in this paper to high N éel temperature I-II-V magnetic compounds whose electronic structure has not been previously identified. Our combined experimental and theoretical work on LiMnAs provides basic prerequisite for the systematic research of this class of materials by demonstrating the feasibility to grow single crystals of group-I alkali metal compounds by molecular beam epitaxy, by demonstrating the semiconducting band structure of the I-Mn-V's, and by analyzing their spin-orbit coupling characteristics favorable for spintronics. △ Less

Submitted 1 July, 2010; originally announced July 2010.

Comments: 11 pages, 5 figures

Structural and magnetic evidence of confined strain fields in GaMnAs grown on ordered arrays of zero-dimensional nanostructures

Authors: X. Marti, T. Cechal, L. Horak, V. Novak, K. Hruska, Z. Vyborny, T. Jungwirth, V. Holy

Abstract: We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the dots strain is compressive. Our experiments confirm that the average tensile strain in the film increases with decreasing dots separation. This trend in strain is… ▽ More We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the dots strain is compressive. Our experiments confirm that the average tensile strain in the film increases with decreasing dots separation. This trend in strain is accompanied by an increase of the out-of-plane magnetization component familiar from the established relation between strain and magnetic anisotropy in GaMnAs films. Our work provides a new route for controlling magneto-crystalline anisotropies in GaMnAs on a nanometer scale. △ Less

Submitted 24 March, 2010; originally announced March 2010.

Comments: Abstract + Text(4 pages) + References(16) + Figures captions(4). Images for 4 figures attached sequentially at the end of the document.

Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires

Authors: A. A. Minkevich, E. Fohtung, T. Slobodskyy, M. Riotte, D. Grigoriev, M. Schmidbauer, A. C. Irvine, V. Novak, V. Holy, T. Baumbach

Abstract: Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure. We demonstrate… ▽ More Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure. We demonstrate the method to be effective for material specific reconstruction of strain distribution in highly integrated devices. △ Less

Submitted 25 September, 2009; originally announced September 2009.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 84, 054113 (2011)

Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

Authors: G. Acbas, M. -H. Kim, M. Cukr, V. Novak, M. A. Scarpulla, O. D. Dubon, T. Jungwirth, Jairo Sinova, J. Cerne

Abstract: We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. T… ▽ More We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier bands and their chiral asymmetry due to spin-orbit coupling. Unlike the unpolarized absorption, they are intimately related to ferromagnetism and their interpretation is much more microscopically constrained in terms of the orbital character of the relevant band states. We show that the conventional theory of the disordered valence band with dominant As p-orbital character and coupled by kinetic-exchange to Mn local moments accounts semi-quantitatively for the overall characteristics of the measured infrared magneto-optical spectra. △ Less

Submitted 1 July, 2009; originally announced July 2009.

Comments: 4 pages 3 figures

Spin-injection Hall effect in a planar photovoltaic cell

Authors: J. Wunderlich, A. C. Irvine, Jairo Sinova, B. G. Park, X. L. Xu, B. Kaestner, V. Novak, T. Jungwirth

Abstract: Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum… ▽ More Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE allows us to develop a quantitative microscopic theory of the phenomenon and to demonstrate its direct application in optoelectronics. We report an experimental realization of a non-magnetic spin-photovoltaic effect via the SIHE, rendering our device an electrical polarimeter which directly converts the degree of circular polarization of light to a voltage signal. △ Less

Submitted 21 November, 2008; originally announced November 2008.

Comments: 14 pages, 4 figures

Dam** and magnetic anisotropy of ferromagnetic GaMnAs thin films

Authors: Kh. Khazen, H. J. von Bardeleben, M. Cubukcu, J. L. Cantin, V. Novak, K. Olejnik, M. Cukr, L. Thevenard, A. Lemaitre

Abstract: The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert dam** factor "alpha" has been determined. At T=4K we obtain a minimum dam** factor of "alpha" = 0.003 for… ▽ More The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert dam** factor "alpha" has been determined. At T=4K we obtain a minimum dam** factor of "alpha" = 0.003 for the compressively stressed layer. Its value is not isotropic. It has a minimum value for the easy axes orientations of the magnetic field and increases with the measuring temperature. Its average value is for both type of films of the order of 0.01 in spite of strong differences in the inhomogeneous linewidth which vary between 20 Oe and 600 Oe for the layers grown on GaAs and GaInAs substrates respectively. △ Less

Submitted 30 September, 2008; v1 submitted 26 September, 2008; originally announced September 2008.

Comments: 23 pages, 2 tables, 13 figures,

Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As

Authors: E. Rozkotova, P. Nemec, N. Tesarova, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well… ▽ More We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well as contributions to the magneto-optical signal that are not connected with the magnetization dynamics. △ Less

Submitted 2 December, 2008; v1 submitted 27 August, 2008; originally announced August 2008.

Comments: 6 pages, 3 figures, accepted in Applied Physics Letters

Journal ref: Applied Physics Letters 93, 232505 (2008).

Low voltage control of ferromagnetism in a semiconductor p-n junction

Authors: M. H. S. Owen, J. Wunderlich, V. Novak, K. Olejnik, 3 J. Zemen, K. Vyborny, S. Ogawa, A. C. Irvine, A. J. Ferguson, H. Sirringhaus, T. Jungwirth

Abstract: The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state me… ▽ More The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state memories. The integration of these two distinct areas of microelectronics in one physical element, with a potentially major impact on the power consumption and scalability of future devices, requires to find efficient means for controlling magnetization electrically. Current induced magnetization switching phenomena represent a promising step towards this goal, however, they relay on relatively large current densities. The direct approach of controlling the magnetization by low-voltage charge depletion effects is seemingly unfeasible as the two worlds of semiconductors and metal ferromagnets are separated by many orders of magnitude in their typical carrier concentrations. Here we demonstrate that this concept is viable by reporting persistent magnetization switchings induced by short electrical pulses of a few volts in an all-semiconductor, ferromagnetic p-n junction. △ Less

Submitted 6 July, 2008; originally announced July 2008.

Comments: 11 pages, 4 figures

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Authors: N. A. Goncharuk, L. Smrcka, J. Kucera, K. Olejnik, V. Novak, Z. Matej, L. Nichtova, V. Holy

Abstract: This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial… ▽ More This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial positions. We have performed quantitative component analysis of experimental spectra collected on the (Ga,Mn)As samples before/after annealing and etching, with the aim to determine the proportion of Mn impurity configurations. Comparison of the experimental data with theoretical computations indicates that even after annealing and etching some Mn atoms still reside in interstitial sites, although the concentration of interstitial defects has been reduced by annealing. △ Less

Submitted 23 March, 2010; v1 submitted 7 May, 2008; originally announced May 2008.

Comments: 8 pages, 10 figures

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

Authors: V. Novak, K. Olejnik, J. Wunderlich, M. Cukr, K. Vyborny, A. W. Rushforth, K. W. Edmonds, R. P. Campion, B. L. Gallagher, Jairo Sinova, T. Jungwirth

Abstract: We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity i… ▽ More We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity in transition metal ferromagnets. Within the critical region accessible in our experiments, the temperature dependence on the ferromagnetic side can be explained by dominant scattering from uncorrelated spin fluctuations. The singular behavior of $dρ/dT$ on the paramagnetic side points to the important role of short-range correlated spin fluctuations. △ Less

Submitted 27 June, 2008; v1 submitted 9 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys.Rev.Letters 101, 077201 (2008)

Laser-induced Precession of Magnetization in GaMnAs

Authors: E. Rozkotova, P. Nemec, D. Sprinzl, P. Horodyska, F. Trojanek, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of seve… ▽ More We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in the sample. △ Less

Submitted 3 March, 2008; originally announced March 2008.

Comments: 4 pages, 5 figures

Journal ref: IEEE Transactions on Magnetics 44, 2674-2677 (2008).

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

Authors: K. Olejnik, M. H. S. Owen, V. Novak, J. Masek, A. C. Irvine, J. Wunderlich, T. Jungwirth

Abstract: (Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high do**s significantly suppress the Curie temperature. We present experiments in wh… ▽ More (Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high do**s significantly suppress the Curie temperature. We present experiments in which by etching the (Ga,Mn)As surface oxide we achieve a dramatic reduction of annealing times necessary to optimize the ferromagnetic film after growth, and report Curie temperature of 180 K at approximately 8% of Mn_Ga. Our study elucidates the mechanism controlling the removal of the most detrimental, interstitial Mn defect. The limits and utility of electrical gating of the highly-doped (Ga,Mn)As semiconductor are not yet established; so far electric-field effects have been demonstrated on magnetization with tens of Volts applied on a top-gate, field effect transistor structure. In the second part of the paper we present a back-gate, n-GaAs/AlAs/GaMnAs transistor operating at a few Volts. Inspired by the etching study of (Ga,Mn)As films we apply the oxide-etching/re-oxidation procedure to reduce the thickness (arial density of carriers) of the (Ga,Mn)As and observe a large enhancement of the gating efficiency. We report gatable spintronic characteristics on a series of anisotropic magnetoresistance measurements. △ Less

Submitted 14 February, 2008; originally announced February 2008.

Comments: 13 pages, 4 figures

Light-induced magnetization precession in GaMnAs

Authors: E. Rozkotova, P. Nemec, P. Horodyska, D. Sprinzl, F. Trojanek, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin… ▽ More We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin of the light-induced magnetization precession is discussed and the magnetization precession dam** (Gilbert dam**) is found to be strongly influenced by annealing of the sample. △ Less

Submitted 10 March, 2008; v1 submitted 14 February, 2008; originally announced February 2008.

Comments: 6 pages, 4 figures. accepted in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 92, 122507 (2008)

The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices

Authors: A. W. Rushforth, K. Výborný, C. S. King, K. W. Edmonds, R. P. Campion, C. T. Foxon, J. Wunderlich, A. C. Irvine, V. Novák, K. Olejník, A. A. Kovalev, Jairo Sinova, T. Jungwirth, B. L. Gallagher

Abstract: We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonst… ▽ More We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. △ Less

Submitted 16 December, 2007; originally announced December 2007.

Comments: Submitted to JMMM for conference proceedings of WUN-SPIN 2007 (York, UK)

Journal ref: doi:10.1016/j.jmmm.2008.04.070

On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

Authors: T. Jungwirth, Jairo Sinova, A. H. MacDonald, B. L. Gallagher, V. Novak, K. W. Edmonds, A. W. Rushforth, R. P. Campion, C. T. Foxon, L. Eaves, K. Olejnik, J. Masek, S. -R. Eric Yang, J. Wunderlich, C. Gould, L. W. Molenkamp, T. Dietl, H. Ohno

Abstract: We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity ban… ▽ More We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% do**, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased do** can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material. △ Less

Submitted 5 July, 2007; v1 submitted 4 July, 2007; originally announced July 2007.

Comments: 10 pages, 12 figures

Substrate temperature changes during MBE growth of GaMnAs

Authors: V. Novak, K. Olejnik, M. Cukr, L. Smrcka, Z. Remes, J. Oswald

Abstract: Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission characteristics of the growing layer. Options for the temperature variation dam** are discussed. Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission characteristics of the growing layer. Options for the temperature variation dam** are discussed. △ Less

Submitted 19 April, 2007; originally announced April 2007.

Comments: 5 pages, 5 figures Submitted to Journal of Applied Physics

Journal ref: J.Appl.Phys. 102, 083536 (2007)

Anisotropic Magnetoresistance components in (Ga,Mn)As

Authors: A. W. Rushforth, K. Výborný, C. S. King, K. W. Edmonds, R. P. Campion, C. T. Foxon, J. Wunderlich, A. C. Irvine, P. Vašek, V. Novák, K. Olejník, Jairo Sinova, T. Jungwirth, B. L. Gallagher

Abstract: Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band war**.… ▽ More Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band war**. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. We develop experimental methods directly yielding the non-crystalline and crystalline AMR components which are then independently analyzed. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. We discuss generic implications of our experimental and theoretical findings including predictions for non-crystalline AMR sign reversals in dilute moment systems. △ Less

Submitted 6 August, 2007; v1 submitted 15 February, 2007; originally announced February 2007.

Comments: 4 pages, 3 figures. Phys. Rev. Lett. in press

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Authors: V. Holy, Z. Matej, O. Pacherova, V. Novak, M. Cukr, K. Olejnik, T. Jungwirth

Abstract: A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concent… ▽ More A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coeffcient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing. △ Less

Submitted 7 September, 2006; originally announced September 2006.

Comments: 9 pages, 9 figures

Cross-Correlation of Instantaneous Phase Increments in Pressure-Flow Fluctuations: Applications to Cerebral Autoregulation

Authors: Zhi Chen, Kun Hu, H. Eugene Stanley, Vera Novak, Plamen Ch. Ivanov

Abstract: We investigate the relationship between the blood flow velocities (BFV) in the middle cerebral arteries and beat-to-beat blood pressure (BP) recorded from a finger in healthy and post-stroke subjects during the quasi-steady state after perturbation for four different physiologic conditions: supine rest, head-up tilt, hyperventilation and CO_2 rebreathing in upright position. To evaluate whether… ▽ More We investigate the relationship between the blood flow velocities (BFV) in the middle cerebral arteries and beat-to-beat blood pressure (BP) recorded from a finger in healthy and post-stroke subjects during the quasi-steady state after perturbation for four different physiologic conditions: supine rest, head-up tilt, hyperventilation and CO_2 rebreathing in upright position. To evaluate whether instantaneous BP changes in the steady state are coupled with instantaneous changes in the BFV, we compare dynamical patterns in the instantaneous phases of these signals, obtained from the Hilbert transform, as a function of time. We find that in post-stroke subjects the instantaneous phase increments of BP and BFV exhibit well pronounced patterns that remain stable in time for all four conditions, while in healthy subjects these patterns are different, less pronounced and more variable. We propose a new approach based on the instantaneous phase increments cross-correlation to quantify the coupling between BP and BFV. We find that the maximum correlation strength is different for the two groups and for the different conditions. For healthy subjects the amplitude of the cross-correlation between the instantaneous phase increments of BP and BFV is small and attenuates within 3-5 heartbeats. In contrast, for post-stroke subjects, this amplitude is significantly larger and cross-correlations persist up to 20 heartbeats. We compare the results of our approach with three complementary methods: direct BP-BFV cross-correlation, transfer function analysis and phase synchronization analysis. △ Less

Submitted 21 October, 2005; v1 submitted 15 August, 2005; originally announced August 2005.

Comments: 15 pages, 6 figures; extensively expanded the manuscript including new analyses and results presented in 3 new figures, added more references

Journal ref: Phys. Rev. E 73, 031915 (2006)

Photoluminescence rings in Corbino disk at quantizing magnetic fields

Authors: V. Novak, P. Svoboda, M. Cukr, W. Prettl

Abstract: Spatially resolved photoluminescence of modulation doped AlGaAs/GaAs heterojunction was investigated in a sample of Corbino disk geometry subject to strong perpendicular magnetic fields. Significant spatial modulation of the photoluminescence was observed in form of one or more concentric rings which travelled across the sample when the magnetic field strength was varied. A topology of the obser… ▽ More Spatially resolved photoluminescence of modulation doped AlGaAs/GaAs heterojunction was investigated in a sample of Corbino disk geometry subject to strong perpendicular magnetic fields. Significant spatial modulation of the photoluminescence was observed in form of one or more concentric rings which travelled across the sample when the magnetic field strength was varied. A topology of the observed structure excludes the possibility of being a trace of an external current. The effect is attributed to formation of compressible and incompressible stripes in a 2DEG density gradient across the sample. △ Less

Submitted 12 August, 2004; originally announced August 2004.

Comments: 5 two-column pages, 4 figures (one of them in color)

Disorder induced critical phenomena in magnetically glassy Cu-Al-Mn alloys

Authors: Jordi Marcos, Eduard Vives, Lluis Manosa, Mehmet Acet, Eyup Duman, Michel Morin, Vaclav Novak, Antoni Planes

Abstract: Measurements of magnetic hysteresis loops in Cu-Al-Mn alloys of different Mn content at low temperatures are presented. The loops are smooth and continuous above a certain temperature, but exhibit a magnetization discontinuity below that temperature. Scaling analysis suggest that this system displays a disorder induced phase transition line. Measurements allow to determine the critical exponents… ▽ More Measurements of magnetic hysteresis loops in Cu-Al-Mn alloys of different Mn content at low temperatures are presented. The loops are smooth and continuous above a certain temperature, but exhibit a magnetization discontinuity below that temperature. Scaling analysis suggest that this system displays a disorder induced phase transition line. Measurements allow to determine the critical exponents $β=0.03\pm 0.01$ and $βδ= 0.4 \pm 0.1$ in agreement with those reported recently [Berger et al., Phys. Rev. Lett. {\bf 85}, 4176 (2000)] △ Less

Submitted 13 September, 2002; originally announced September 2002.

Comments: 4 pages, 5 figures