Showing 1–50 of 93 results for author: Novak, V

Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device

Authors: M. Surynek, J. Zubac, K. Olejnik, A. Farkas, F. Krizek, L. Nadvornik, P. Kubascik, F. Trojanek, R. P. Campion, V. Novak, T. Jungwirth, P. Nemec

Abstract: Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabi… ▽ More Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabilities of the human brain. In this paper, we report on experimental separation of switching-related and heat-related resistance signal dynamics in memory devices microfabricated from CuMnAs antiferromagnetic metal. We show that the memory variable multilevel resistance can be used as a long-term memory (LTM), lasting up to minutes at room temperature. In addition, ultrafast reflectivity change and heat dissipation from nanoscale-thickness CuMnAs films, taking place on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory (STM). Information about input stimuli, represented by femtosecond laser pulses, can be transferred from STM to LTM after rehearsals at picosecond to nanosecond times in these memory devices, where information can be retrieved at times up to 10^15 longer than the input pulse duration. Our results open a route towards ultra-fast low-power implementations of spiking neuron and synapse functionalities using a resistive analog antiferromagnetic memory. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: 21 pages, 4 figures

Magneto-Acoustic Waves in antiferromagnetic CuMnAs excited by Surface Acoustic Waves

Authors: M. Waqas Khaliq, Oliver Amin, Alberto Hernández-Mínguez, Marc Rovirola, Blai Casals, Khalid Omari, Sandra Ruiz-Gómez, Simone Finizio, Richard P. Campion, Kevin W. Edmonds, Vıt Novak, Anna Mandziak, Lucia Aballe, Miguel Angel Niño, Joan Manel Hernàndez, Peter Wadley, Ferran Macià, Michael Foerster

Abstract: Magnetoelastic effects in antiferromagnetic CuMnAs are investigated by applying dynamic strain in the 0.01% range through surface acoustic waves in the GaAs substrate. The magnetic state of the CuMnAs/GaAs is characterized by a multitude of submicron-sized domains which we image by x-ray magnetic linear dichroism combined with photoemission electron microscopy. Within the explored strain range, Cu… ▽ More Magnetoelastic effects in antiferromagnetic CuMnAs are investigated by applying dynamic strain in the 0.01% range through surface acoustic waves in the GaAs substrate. The magnetic state of the CuMnAs/GaAs is characterized by a multitude of submicron-sized domains which we image by x-ray magnetic linear dichroism combined with photoemission electron microscopy. Within the explored strain range, CuMnAs shows magnetoelastic effects in the form of Néel vector waves with micrometer wavelength, which corresponds to an averaged overall spin-axis rotation up to 2.4 deg driven by the time-dependent strain from the surface acoustic wave. Measurements at different temperatures indicate a reduction of the wave amplitude when lowering the temperature. However, no domain wall motion has been detected on the nanosecond timescale △ Less

Submitted 16 September, 2023; originally announced September 2023.

Stockmayer supracolloidal magnetic polymers under the influence of an applied magnetic field and a shear flow

Authors: Ivan S. Novikau, Vladimir V. Zverev, Ekaterina V. Novak, Sofia S. Kantorovich

Abstract: The idea of creating magnetically controllable colloids whose rheological properties can be finely tuned on the nano- or micro-scale has caused a lot of experimental and theoretical effort. The latter resulted in systems whose building blocks are ranging between single magnetic nanoparticles to complexes of such nanoparticles bound together by various mechanisms. The binding can be either chemical… ▽ More The idea of creating magnetically controllable colloids whose rheological properties can be finely tuned on the nano- or micro-scale has caused a lot of experimental and theoretical effort. The latter resulted in systems whose building blocks are ranging between single magnetic nanoparticles to complexes of such nanoparticles bound together by various mechanisms. The binding can be either chemical or physical, reversible or not. One way to create a system that is physically bound is to let the precrosslinked supracolloidal magnetic polymers (SMPs) to cluster due to both magnetic and Van-der-Waals-type forces. The topology of the SMPs in this case can be used to tune both magnetic and rheological properties of the resulting clusters as we show in this work. We employ Molecular Dynamics computer simulations coupled with explicit solvent modelled by Lattice-Boltzmann method in order to model the behaviour of the clusters formed by chains, rings, X- and Y-shaped SMPs in a shear flow with externally applied magnetic field. We find that the shear stabilises the shape of the clusters not letting them extend in the direction of the field and disintegrate. The clusters that show the highest response to an applied field and higher shape stability are those made of Y- and X-like SMPs. △ Less

Submitted 5 June, 2023; originally announced June 2023.

Comments: 13 pages, 10 figures

Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films

Authors: Peter Kubaščík, Andrej Farkaš, Kamil Olejník, Tinkara Troha, Matěj Hývl, Filip Krizek, Deep C. Joshi, Tomáš Ostatnický, Jiří Jechumtál, Eva Schmoranzerová, Richard P. Campion, Jakub Zázvorka, Vít Novák, Petr Kužel, Tomáš Jungwirth, Petr Němec, Lukáš Nádvorník

Abstract: Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be… ▽ More Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be affected by the film morphology and growth defects. In this study, we investigate the properties of CuMnAs thin films by probing the defect-related uniaxial anisotropy of electric conductivity by contact-free terahertz transmission spectroscopy. We show that the terahertz measurements conveniently detect the conductivity anisotropy, that are consistent with conventional DC Hall-bar measurements. Moreover, the terahertz technique allows for considerably finer determination of anisotropy axes and it is less sensitive to the local film degradation. Thanks to the averaging over a large detection area, the THz probing also allows for an analysis of strongly non-uniform thin films. Using scanning near-field terahertz and electron microscopies, we relate the observed anisotropic conductivity of CuMnAs to the elongation and orientation of growth defects, which influence the local microscopic conductivity. We also demonstrate control over the morphology of defects by using vicinal substrates. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 33 pages, 16 figures

Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices

Authors: Sonka Reimers, Olena Gomonay, Oliver J. Amin, Filip Krizek, Luke X. Barton Yaryna Lytvynenko, Stuart Poole, Richard P. Campion, Vit Novák, Francesco Maccherozzi, Dina Carbone, Alexander Björling, Yuran Niu, Evangelos Golias, Dominik Kriegner, Jairo Sinova, Mathias Kläui, Martin Jourdan, Sarnjeet S. Dhesi, Kevin W. Edmonds, Peter Wadley

Abstract: Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here,… ▽ More Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clam** and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices. △ Less

Submitted 17 April, 2023; v1 submitted 19 February, 2023; originally announced February 2023.

Comments: 31 pages, 7 figures

Selected aspects of complex, hypercomplex and fuzzy neural networks

Authors: Agnieszka Niemczynowicz, Radosław A. Kycia, Maciej Jaworski, Artur Siemaszko, Jose M. Calabuig, Lluis M. García-Raffi, Baruch Schneider, Diana Berseghyan, Irina Perfiljeva, Vilem Novak, Piotr Artiemjew

Abstract: This short report reviews the current state of the research and methodology on theoretical and practical aspects of Artificial Neural Networks (ANN). It was prepared to gather state-of-the-art knowledge needed to construct complex, hypercomplex and fuzzy neural networks. The report reflects the individual interests of the authors and, by now means, cannot be treated as a comprehensive review of… ▽ More This short report reviews the current state of the research and methodology on theoretical and practical aspects of Artificial Neural Networks (ANN). It was prepared to gather state-of-the-art knowledge needed to construct complex, hypercomplex and fuzzy neural networks. The report reflects the individual interests of the authors and, by now means, cannot be treated as a comprehensive review of the ANN discipline. Considering the fast development of this field, it is currently impossible to do a detailed review of a considerable number of pages. The report is an outcome of the Project 'The Strategic Research Partnership for the mathematical aspects of complex, hypercomplex and fuzzy neural networks' meeting at the University of Warmia and Mazury in Olsztyn, Poland, organized in September 2022. △ Less

Submitted 20 October, 2023; v1 submitted 29 December, 2022; originally announced January 2023.

Comments: 46 pages

Probing the Manipulation of Antiferromagnetic Order in CuMnAs Films Using Neutron Diffraction

Authors: Stuart F. Poole, Luke X. Barton, Mu Wang, Pascal Manuel, Dmitri Khalyavin, Sean Langridge, Kevin W. Edmonds, Richard P. Campion, Vit Novák, Peter Wadley

Abstract: We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for films as thin as 20 nm indicating that they undergo a spin-flop transition. Good agreement is found between neutron diffraction and electron transport… ▽ More We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for films as thin as 20 nm indicating that they undergo a spin-flop transition. Good agreement is found between neutron diffraction and electron transport measurements of the spin-flop rotation in the same layer, with a similar shape and hysteresis of the obtained curves, while the neutron measurements provide a quantitative determination of the spin flop extent throughout the antiferromagnet layer. △ Less

Submitted 20 October, 2022; originally announced October 2022.

Comments: 5 pages, 4 figures, includes supplementary information

Journal ref: Appl. Phys. Lett. 121, 052402 (2022)

Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs

Authors: A. Garrison Linn, Peipei Hao, Kyle N. Gordon, Dushyant Narayan, Bryan S. Berggren, Nathaniel Speiser, Sonka Reimers, Richard P. Campion, Vít Novák, Sarnjeet S. Dhesi, Timur Kim, Cephise Cacho, Libor Šmejkal, Tomáš Jungwirth, Jonathan D. Denlinger, Peter Wadley, Dan Dessau

Abstract: Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemi… ▽ More Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of $\approx-390$ meV (hole do**), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calculations. Additionally, 2x1 surface reconstructions are found in the low energy electron diffraction (LEED) and ARPES. This work underscores the need to control the chemical potential in tetragonal CuMnAs to enable the exploration and exploitation of the Dirac fermions with tunable masses, which are predicted to be above the chemical potential in the present samples. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Comments: Submitted to Physical Review X. 20 pages. 9 figures

Ultrashort spin-orbit torque generated by femtosecond laser pulses

Authors: T. Janda, T. Ostatnicky, P. Nemec, E. Schmoranzerova, R. Campion, V. Hills, V. Novak, Z. Soban, J. Wunderlich

Abstract: To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed… ▽ More To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance. Here we demonstrate generation of ultrashort SOT pulses that excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses into high-amplitude current pulses in an electrically biased p-i-n photodiode. We control the polarity, amplitude, and duration of the current pulses and, most importantly, also their propagation direction with respect to the crystal orientation. The SOT origin of the excited Larmor precession was revealed by a detailed analysis of the precession phase and amplitude at different experimental conditions. △ Less

Submitted 25 August, 2022; originally announced August 2022.

Comments: 14 pages, 4 figures

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature

Authors: O. J. Amin, S. F. Poole, S. Reimers, L. X. Barton, F. Maccherozzi, S. S. Dhesi, V. Novák, F. Křížek, J. S. Chauhan, R. P. Campion, A. W. Rushforth, T. Jungwirth, O. A. Tretiakov, K. W. Edmonds, P. Wadley

Abstract: Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of the… ▽ More Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices. △ Less

Submitted 1 July, 2022; originally announced July 2022.

Comments: 11 pages, 4 figures

Behaviour of a magnetic nanogel in a shear flow

Authors: Ivan S. Novikau, Ekaterina V. Novak, Elena S. Pyanzina, Sofia S. Kantorovich

Abstract: Magnetic nanogels (MNG) -- soft colloids made of polymer matrix with embedded in it magnetic nanoparticles (MNPs) -- are promising magneto-controllable drug carriers. In order to develop this potential, one needs to clearly understand the relationship between nanogel magnetic properties and its behaviour in a hydrodynamic flow. Considering the size of the MNG and typical time and velocity scales i… ▽ More Magnetic nanogels (MNG) -- soft colloids made of polymer matrix with embedded in it magnetic nanoparticles (MNPs) -- are promising magneto-controllable drug carriers. In order to develop this potential, one needs to clearly understand the relationship between nanogel magnetic properties and its behaviour in a hydrodynamic flow. Considering the size of the MNG and typical time and velocity scales involved in their nanofluidics, experimental characterisation of the system is challenging. In this work, we perform molecular dynamics (MD) simulations combined with the Lattice-Boltzmann (LB) scheme aiming at describing the impact of the shear rate on the shape, magnetic structure and motion of an MNG. We find that in a shear flow the centre of mass of an MNG tends to be in the centre of a channel and to move preserving the distance to both walls. The MNG monomers along with translation are involved in two more types of motion, they rotate around the centre of mass and oscillate with respect to the latter. It results in synchronised tumbling and wobbling of the whole MNG accompanied by its volume oscillates. The fact the MNG is a highly compressible and permeable for the carrier liquid object makes its behaviour different from that predicted by classical Taylor-type models. We show that the frequency of volume oscillations and rotations are identical and are growing function of the shear rate. We find that the stronger magnetic interactions in the MNG are, the higher is the frequency of this complex oscillatory motion, and the lower is its amplitude. Finally, we show that the oscillations of the volume lead to the periodic changes in MNG magnetic energy. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Comments: 14 pages, 14 figures

Defect-driven antiferromagnetic domain walls in CuMnAs films

Authors: Sonka Reimers, Dominik Kriegner, Olena Gomonay, Dina Carbone, Filip Krizek, Vit Novak, Richard P. Campion, Francesco Maccherozzi, Alexander Bjorling, Oliver J. Amin, Luke X. Barton, Stuart F. Poole, Khalid A. Omari, Jan Michalicka, Ondrej Man, Jairo Sinova, Tomas Jungwirth, Peter Wadley, Sarnjeet S. Dhesi, Kevin W. Edmonds

Abstract: Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microsco… ▽ More Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Hysteretic effects and magnetotransport of electrically switched CuMnAs

Authors: Jan Zubáč, Zdeněk Kašpar, Filip Krizek, Tobias Förster, Richard P. Campion, Vít Novák, Tomáš Jungwirth, Kamil Olejník

Abstract: Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hyster… ▽ More Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs. △ Less

Submitted 12 July, 2021; originally announced July 2021.

Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs

Authors: J. J. F. Heitz, L. Nádvorník, V. Balos, Y. Behovits, A. L. Chekhov, T. S. Seifert, K. Olejník, Z. Kašpar, K. Geishendorf, V. Novák, R. P. Campion, M. Wolf, T. Jungwirth, T. Kampfrath

Abstract: We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines… ▽ More We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller. △ Less

Submitted 16 June, 2021; originally announced June 2021.

Atomically sharp domain walls in an antiferromagnet

Authors: Filip Krizek, Sonka Reimers, Zdeněk Kašpar, Alberto Marmodoro, Jan Michalička, Ondřej Man, Alexander Edstrom, Oliver J. Amin, Kevin W. Edmonds, Richard P. Campion, Francesco Maccherozzi, Sarnjeet S. Dnes, Jan Zubáč, Jakub Železný, Karel Výborný, Kamil Olejník, Vít Novák, Jan Rusz, Juan C. Idrobo, Peter Wadley, Tomas Jungwirth

Abstract: The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic d… ▽ More The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Comments: 8 pages, 4 figures, Supplementary information

Journal ref: Science advances, 8(13), eabn3535 (2022)

Accenture at CheckThat! 2020: If you say so: Post-hoc fact-checking of claims using transformer-based models

Authors: Evan Williams, Paul Rodrigues, Valerie Novak

Abstract: We introduce the strategies used by the Accenture Team for the CLEF2020 CheckThat! Lab, Task 1, on English and Arabic. This shared task evaluated whether a claim in social media text should be professionally fact checked. To a journalist, a statement presented as fact, which would be of interest to a large audience, requires professional fact-checking before dissemination. We utilized BERT and RoB… ▽ More We introduce the strategies used by the Accenture Team for the CLEF2020 CheckThat! Lab, Task 1, on English and Arabic. This shared task evaluated whether a claim in social media text should be professionally fact checked. To a journalist, a statement presented as fact, which would be of interest to a large audience, requires professional fact-checking before dissemination. We utilized BERT and RoBERTa models to identify claims in social media text a professional fact-checker should review, and rank these in priority order for the fact-checker. For the English challenge, we fine-tuned a RoBERTa model and added an extra mean pooling layer and a dropout layer to enhance generalizability to unseen text. For the Arabic task, we fine-tuned Arabic-language BERT models and demonstrate the use of back-translation to amplify the minority class and balance the dataset. The work presented here was scored 1st place in the English track, and 1st, 2nd, 3rd, and 4th place in the Arabic track. △ Less

Submitted 4 September, 2020; originally announced September 2020.

Comments: To Appear As: Evan Williams, Paul Rodrigues, Valerie Novak. Accenture at CheckThat! 2020: If you say so: Post-hoc fact-checking of claims using transformer-based models. In: Cappellato et al. Working Notes of CLEF 2020-Conference and Labs of the Evaluation Forum. Thessaloniki, Greece. 22-25 September 2020

Adsorption transition of a grafted ferromagnetic filament controlled by external magnetic fields

Authors: Pedro A. Sánchez, Ekaterina V. Novak, Elena S. Pyanzina, Sofia S. Kantorovich, Joan J. Cerdà, Tomás Sintes

Abstract: Extensive Langevin dynamics simulations are used to characterize the adsorption transition of a flexible magnetic filament grafted onto an attractive planar surface. Our results identify different structural transitions at different ratios of the thermal energy to the surface attraction strength: filament straightening, adsorption and the magnetic flux closure. The adsorption temperature of a magn… ▽ More Extensive Langevin dynamics simulations are used to characterize the adsorption transition of a flexible magnetic filament grafted onto an attractive planar surface. Our results identify different structural transitions at different ratios of the thermal energy to the surface attraction strength: filament straightening, adsorption and the magnetic flux closure. The adsorption temperature of a magnetic filament is found to be higher in comparison to an equivalent nonmagnetic chain. The adsorption has been also investigated under the application of a static homogeneous external magnetic field. We found that the strength and the orientation of the field can be used to control the adsorption process, providing a precise switching mechanism. Interestingly, we have observed that the characteristic field strength and tilt angle at the adsorption point are related by a simple power law. △ Less

Submitted 18 July, 2020; originally announced July 2020.

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Authors: Tomas Janda, Joao Godinho, Tomas Ostatnicky, Emanuel Pfitzner, Georg Ulrich, Arne Hoehl, Sonka Reimers, Zbynek Soban, Thomas Metzger, Helena Reichlova, Vít Novák, Richard Campion, Joachim Heberle, Peter Wadley, Kevin Edmonds, Ollie Amin, Jas Chauhan, Sarnjeet Dhesi, Francesco Maccherozzi, Ruben Otxoa, Pierre Roy, Kamil Olejnik, Petr Němec, Tomas Jungwirth, Bernd Kaestner , et al. (1 additional authors not shown)

Abstract: Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma… ▽ More Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 094413 (2020)

Investigation of Magnetic Anisotropy and Heat Dissipation in Thin Films of Compensated Antiferromagnet CuMnAs by Pump-probe Experiment

Authors: M. Surynek, V. Saidl, Z. Kaspar, V. Novak, R. P. Campion, P. Wadley, P. Nemec

Abstract: We recently reported on a method to determine the easy axis position in a 10 nm thick film of the fully compensated antiferromagnet CuMnAs. The film had a uniaxial magnetic anisotropy and the technique utilized a magneto-optical pump and probe experiment [Nature Photonics 11, 91 (2017)]. In this contribution we discuss the applicability of this method for the investigation of a broader set of epit… ▽ More We recently reported on a method to determine the easy axis position in a 10 nm thick film of the fully compensated antiferromagnet CuMnAs. The film had a uniaxial magnetic anisotropy and the technique utilized a magneto-optical pump and probe experiment [Nature Photonics 11, 91 (2017)]. In this contribution we discuss the applicability of this method for the investigation of a broader set of epitaxial CuMnAs films having different thicknesses. This work reveals that the equilibrium magnetic anisotropy can be studied only in samples where this anisotropy is rather strong. However, in the majority of CuMnAs films, the impact of a strong pump pulse induces nano-fragmentation of the magnetic domains and, therefore, the magnetic anisotropy measured by the pump-probe technique differs substantially from that in the equilibrium conditions. We also demonstrate that optical pump-probe experiment can be used very efficiently to study the local heating and heat dissipation in CuMnAs epitaxial layers. In particular, we determined the electron-phonon relaxation time in CuMnAs. We also observed that for a local film heating by a focused laser the thinner films are heated more, but the heat is dissipated considerably faster than in the case of thicker films. This illustrates that the optical pump-probe experiment is a valuable characterization tool for the heat management optimization in the CuMnAs memory devices and can be applied in a similar way to those used during heat-assisted magnetic recording (HAMR) technology development for the latest generation of hard drive disks. △ Less

Submitted 25 May, 2020; v1 submitted 11 April, 2020; originally announced April 2020.

Comments: 20 pages, 9 figures

Journal ref: J. Appl. Phys. 127, 233904 (2020)

Current-induced fragmentation of antiferromagnetic domains

Authors: M. S. Wörnle, P. Welter, Z. Kašpar, K. Olejník, V. Novák, R. P. Campion, P. Wadley, T. Jungwirth, C. L. Degen, P. Gambardella

Abstract: Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neur… ▽ More Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neuromorphic computing. Here we report simultaneous electrical pulsing and scanning NV magnetometry of antiferromagnetic domains in CuMnAs performed using a pump-probe scheme. We observe a nano-scale fragmentation of the antiferromagnetic domains, which is controlled by the current amplitude and independent on the current direction. The fragmented antiferromagnetic state conserves a memory of the pristine domain pattern, towards which it relaxes. Domain fragmentation coexists with permanent switching due to the reorientation of the antiferromagnetic moments. Our simultaneous imaging and resistance measurements show a correlation between the antiferromagnetic domain fragmentation and the largest resistive switching signals in CuMnAs. △ Less

Submitted 11 December, 2019; originally announced December 2019.

The structure of clusters formed by Stockmayer supracolloidal magnetic polymers

Authors: Ekaterina V. Novak, Elena S. Pyanzina, Pedro A. Sánchez, Sofia S. Kantorovich

Abstract: Unlike Stockmayer fluids, that prove to undergo gas-liquid transition on cooling, the system of dipolar hard or soft spheres without any additional central attraction so far has not been shown to have a critical point. Instead, in the latter, one observes diverse self-assembly scenarios. Crosslinking dipolar soft spheres into supracolloidal magnetic polymer-like structures (SMPs) changes the self-… ▽ More Unlike Stockmayer fluids, that prove to undergo gas-liquid transition on cooling, the system of dipolar hard or soft spheres without any additional central attraction so far has not been shown to have a critical point. Instead, in the latter, one observes diverse self-assembly scenarios. Crosslinking dipolar soft spheres into supracolloidal magnetic polymer-like structures (SMPs) changes the self-assembly behaviour. Moreover, aggregation in systems of SMPs strongly depends on the constituent topology. For Y- and X-shaped SMPs, under the same conditions in which dipolar hard spheres would form chains, the formation of very large loose gel-like clusters was observed [Journal of Molecular Liquids, 271, 631 (2018)]. In this work, using molecular dynamics simulations, we investigate self-assembly in suspensions of four topologically different SMPs -- chains, rings, X and Y -- monomers in which interact via Stockmayer potential. As expected, compact drop-like clusters are formed by SMPs in all cases if the central isotropic attraction is introduced, however, their shape and internal structure turn out to depend on the SMPs topology. △ Less

Submitted 3 December, 2019; originally announced December 2019.

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Authors: M. Wang, C. Andrews, S. Reimers, O. J. Amin, P. Wadley, R. P. Campion, S. F. Poole, J. Felton, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, K. Gas, M. Sawicki, D. Kriegner, J. Zubac, K. Olejnik, V. Novak, T. Jungwirth, M. Shahrokhvand, U. Zeitler, S. S. Dhesi, F. Maccherozzi

Abstract: Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b… ▽ More Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields. △ Less

Submitted 21 June, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Comments: 26 pages, 6 figures

Journal ref: Phys. Rev. B 101, 094429 (2020)

Molecular beam epitaxy of CuMnAs

Authors: Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka, Dominik Kriegner, Elisabetta M. Fiordaliso, Jan Michalicka, Ondřej Man, Jan Zubáč, Martin Brajer, Victoria A. Hills, Kevin W. Edmonds, Peter Wadley, Richard P. Campion, Kamil Olejník, Tomáš Jungwirth, Vít Novák

Abstract: We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si subs… ▽ More We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 10 pages, 8 figures and supplementary material

Journal ref: Phys. Rev. Materials 4, 014409 (2020)

Magnetic properties of clusters of supracolloidal magnetic polymers with central attraction

Authors: Ekaterina V. Novak, Vladimir S. Zverev, Elena S. Pyanzina, Pedro A. Sánchez, Sofia S. Kantorovich

Abstract: Supracolloidal magnetic polymers (SMPs) are structures made by crosslinking magnetic particles. In this work, using Langevin dynamics simulations, we study the zero-field magnetic properties of clusters formed in suspensions of SMPs with different topologies -- chains, rings, X and Y -- that interact via Stockmayer potential. We find that the presence of central attraction, resulting in the format… ▽ More Supracolloidal magnetic polymers (SMPs) are structures made by crosslinking magnetic particles. In this work, using Langevin dynamics simulations, we study the zero-field magnetic properties of clusters formed in suspensions of SMPs with different topologies -- chains, rings, X and Y -- that interact via Stockmayer potential. We find that the presence of central attraction, resulting in the formation of large compact clusters, leads to a dramatic decrease of the suspension initial susceptibility, independently from SMP topology. However, the largest decrease corresponds to chain-like SMPs with strongly interacting particles. This is due to the higher rotational degrees of freedom of SMPs with such topology, which allows the particles to reorganise themselves inside the clusters in such a way that their magnetic moments form energetically advantageous vortex structures with negligible net magnetic moments. △ Less

Submitted 22 October, 2019; originally announced October 2019.

Comments: International Conference on Magnetic Fluids - ICMF 2019

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Authors: Zdeněk Kašpar, Miloslav Surýnek, Jan Zubáč, Filip Krizek, Vít Novák, Richard P. Campion, Martin S. Wörnle, Pietro Gambardella, Xavier Marti, Petr Němec, K. W. Edmonds, S. Reimers, O. J. Amin, F. Maccherozzi, S. S. Dhesi, Peter Wadley, Jörg Wunderlich, Kamil Olejník, Tomáš Jungwirth

Abstract: Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets,… ▽ More Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components. △ Less

Submitted 24 June, 2021; v1 submitted 19 September, 2019; originally announced September 2019.

Journal ref: Nat. Electron 4 (2021) 30-37

Suspensions of supracolloidal magnetic polymers: self-assembly properties from computer simulations

Authors: E. V. Novak, E. S. Pyanzina, D. A. Rozhkov, M. Ronti, J. J. Cerdà, T. Sintes, P. A. Sánchez, S. S. Kantorovich

Abstract: We study self-assembly in suspensions of supracolloidal polymer-like structures made of crosslinked magnetic particles. Inspired by self-assembly motifs observed for dipolar hard spheres, we focus on four different topologies of the polymer-like structures: linear chains, rings, Y-shaped and X-shaped polymers. We show how the presence of the crosslinkers, the number of beads in the polymer and the… ▽ More We study self-assembly in suspensions of supracolloidal polymer-like structures made of crosslinked magnetic particles. Inspired by self-assembly motifs observed for dipolar hard spheres, we focus on four different topologies of the polymer-like structures: linear chains, rings, Y-shaped and X-shaped polymers. We show how the presence of the crosslinkers, the number of beads in the polymer and the magnetic interparticle interaction affect the structure of the suspension. It turns out that for the same set of parameters, the rings are the least active in assembling larger structures, whereas the system of Y- and especially X-like magnetic polymers tend to form very large loose aggregates. △ Less

Submitted 21 September, 2018; originally announced September 2018.

Journal ref: Journal of Molecular Liquids 271, 631 (2018)

Influence of the particle shape on the equilibrium morphologies of supracolloidal magnetic filaments

Authors: E. S. Pyanzina, E. V. Novak, D. A. Rozhkov, A. V. Gudkova, P. A. Sánchez

Abstract: We investigate the equilibrium morphologies of linear and ring-shaped magnetic filaments made from crosslinked ferromagnetic spherical or ellipsoidal colloidal particles. Using Langevin dynamics simulations, we calculate the radius of gyration and total magnetic moment of a single filament at zero field and different temperatures, analyzing the influence of the particles shape, the strength of the… ▽ More We investigate the equilibrium morphologies of linear and ring-shaped magnetic filaments made from crosslinked ferromagnetic spherical or ellipsoidal colloidal particles. Using Langevin dynamics simulations, we calculate the radius of gyration and total magnetic moment of a single filament at zero field and different temperatures, analyzing the influence of the particles shape, the strength of their magnetic moment and the filament length. Our results show that, among such parameters, the shape of the particles has the strongest qualitative impact on the equilibrium behavior of the filaments. △ Less

Submitted 21 September, 2018; originally announced September 2018.

Journal ref: Magnetohydrodynamics 54, 103 (2018)

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Authors: J. Godinho, H. Reichlova, D. Kriegner, V. Novak, K. Olejnik, Z. Kaspar, Z. Soban, P Wadley, R. P. Campion, R. M. Otxoa, P. E. Roy, J. Zelezny, T. Jungwirth, J. Wunderlich

Abstract: Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f… ▽ More Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 5 pictures, supplementary informations

Band structure of CuMnAs probed by optical and photoemission spectroscopy

Authors: M. Veis, J. Minar, G. Steciuk, L. Palatinus, C. Rinaldi, M. Cantoni, D. Kriegner, K. K. Tikuisis, J. Hamrle, M. Zahradnik, R. Antos, J. Zelezny, L. Smejkal, P. Wadley, R. P. Campion, C. Frontera, K. Uhlirova, T. Duchon, P. Kuzel, V. Novak, T. Jungwirth, K. Vyborny

Abstract: Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave… ▽ More Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys.Rev.B 96, 094406 (2017)] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell. △ Less

Submitted 21 December, 2017; v1 submitted 4 December, 2017; originally announced December 2017.

Comments: 5 pages, 5 figures + Supplementary Information

Journal ref: Phys. Rev. B 97, 125109 (2018)

THz electrical writing speed in an antiferromagnetic memory

Authors: K. Olejnik, T. Seifert, Z. Kaspar, V. Novak, P. Wadley, R. P. Campion, M. Baumgartner, P. Gambardella, P. Nemec, J. Wunderlich, J. Sinova, M. Muller, T. Kampfrath, T. Jungwirth

Abstract: The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed… ▽ More The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band. △ Less

Submitted 24 October, 2017; originally announced November 2017.

Current-polarity dependent manipulation of antiferromagnetic domains

Authors: P. Wadley, S. Reimers, M. J. Grzybowski, C. Andrews, M. Wang, J. S. Chauhan, B. L. Gallagher, R. P. Campion, K. W. Edmonds, S. S. Dhesi, F. Maccherozzi, V. Novak, J. Wunderlich, T. Jungwirth

Abstract: Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plan… ▽ More Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plane current pulses were used to induce 90 degree rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry . Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using x-ray magnetic linear dichroism microscopy, and can also be detected electrically. The switching by domain wall motion can occur at much lower current densities than those needed for coherent domain switching. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Comments: 8 pages, 4 figures

Fast optical control of spin in semiconductor interfacial structures

Authors: L. Nádvorník, M. Surýnek, K. Olejník, V. Novák, J. Wunderlich, F. Trojánek, T. Jungwirth, P. Němec

Abstract: We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi… ▽ More We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Applied 8, 034022 (2017)

Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films

Authors: P. Wadley, K. W. Edmonds, M. R. Shahedkhah, R. P. Campion, B. L. Gallagher, J. Zelezny, J. Kunes, V. Novak, T. Jungwirth, V. Saidl, P. Nemec, F. Maccherozzi, S. S. Dhesi

Abstract: Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5nm thick CuMnAs layer is rotatable under small magnetic fields, due to the… ▽ More Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5nm thick CuMnAs layer is rotatable under small magnetic fields, due to the interlayer exchange coupling. This allows us to obtain the x-ray magnetic linear dichroism spectra for different crystalline orientations of CuMnAs in the (001) plane. △ Less

Submitted 10 February, 2017; originally announced February 2017.

Comments: 10 pages, 3 figures

Antiferromagnetic multi-level memory cell

Authors: V. Schuler, K. Olejnik, X. Marti, V. Novak, P. Wadley, R. P. Campion, K. W. Edmonds, B. L. Gallagher, J. Garces, M. Baumgartner, P. Gambardella, T. Jungwirth

Abstract: Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been notoriously difficult to control antiferromagnetic moments by any practical means suitable for device applications. This has left AFs over their hundred years history v… ▽ More Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been notoriously difficult to control antiferromagnetic moments by any practical means suitable for device applications. This has left AFs over their hundred years history virtually unexploited and only poorly explored, in striking contrast to the thousands of years of fascination and utility of ferromagnetism. Very recently it has been predicted and experimentally confirmed that relativistic spin-orbit torques can provide the means for efficient electrical control of an AF. Here we place the emerging field of antiferromagnetic spintronics on the map of non-volatile solid state memory technologies. We demonstrate the complete write/store/read functionality in an antiferromagnetic CuMnAs bit cell embedded in a standard printed circuit board communicating with a computer via a USB interface. We show that the elementary-shape bit cells fabricated from a single-layer AF are electrically written on timescales ranging from milliseconds to nanoseconds and we demonstrate their deterministic multi-level switching. The multi-level cell characteristics, reflecting series of reproducible, electrically controlled domain reconfigurations, allow us to integrate memory and signal counter functionalities within the bit cell. △ Less

Submitted 10 August, 2016; originally announced August 2016.

Comments: 13 pages, 3 figures

Optical determination of the Neel vector in a CuMnAs thin-film antiferromagnet

Authors: V. Saidl, P. Nemec, P. Wadley, V. Hills, R. P. Campion, V. Novak, K. W. Edmonds, F. Maccherozzi, S. S. Dhesi, B. L. Gallagher, F. Trojanek, J. Kunes, J. Zelezny, P. Maly, T. Jungwirth

Abstract: Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find u… ▽ More Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs which is the prominent material used in the first realization of antiferromagnetic memory chips. We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction and X-ray magnetic dichroism measurements. This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model. △ Less

Submitted 5 August, 2016; originally announced August 2016.

Comments: 10 pages, 4 figures

Journal ref: Nature Photonics 11, 91-97 (2017)

Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

Authors: H. Reichlova, V. Novak, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, M. Marysko, J. Wunderlich, X. Marti, T. Jungwirth

Abstract: We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate… ▽ More We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise. △ Less

Submitted 31 July, 2016; originally announced August 2016.

Journal ref: Mater. Res. Express 3 (2016) 076406

Imaging current-induced switching of antiferromagnetic domains in CuMnAs

Authors: M. J. Grzybowski, P. Wadley, K. W. Edmonds, R. Beardsley, V. Hills, R. P. Campion, B. L. Gallagher, J. S. Chauhan, V. Novak, T. Jungwirth, F. Maccherozzi, S. S. Dhesi

Abstract: The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current… ▽ More The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current can induce reproducible and reversible modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. The current-induced domain switching is inhomogeneous at the submicron level. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated. △ Less

Submitted 1 February, 2017; v1 submitted 28 July, 2016; originally announced July 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 118, 057701 (2017)

Efficient conversion of light to charge and spin in Hall-bar microdevice

Authors: L. Nádvorník, J. A. Haigh, K. Olejník, A. C. Irvine, V. Novák, T. Jungwirth, J. Wunderlich

Abstract: We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude… ▽ More We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 91, 125205 (2015)

Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

Authors: L. Nádvorník, K. Olejník, P. Němec, V. Novák, T. Janda, J. Wunderlich, F. Trojánek, T. Jungwirth

Abstract: We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude… ▽ More We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 075306 (2016)

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

Authors: L. Nádvorník, P. Němec, T. Janda, K. Olejník, V. Novák, V. Skoromets, H. Němec, P. Kužel, F. Trojánek, T. Jungwirth, J. Wunderlich

Abstract: The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and t… ▽ More The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate do**, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Journal ref: Sci. Rep. 6, 22901 (2016)

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Authors: D. Kriegner, K. Vyborny, K. Olejnik, H. Reichlova, V. Novak, X. Marti, J. Gazquez, V. Saidl, P. Nemec, V. V. Volobuev, G. Springholz, V. Holy, T. Jungwirth

Abstract: A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a mul… ▽ More A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Journal ref: Nature Communications 7,11623 (2016)

Electrical detection of magnetization reversal without auxiliary magnets

Authors: K. Olejník, V. Novák, J. Wunderlich, T. Jungwirth

Abstract: First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques… ▽ More First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques requiring no reference ferromagnet. Here we report the observation of a counterpart magnetoresistance effect in such a relativistic system which allows us to electrically detect the sign of the magnetization without an auxiliary magnetic field or ferromagnet. We observe the effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)As epilayer is set either parallel or antiparallel to a current-induced non-equilibrium spin polarization of carriers. In our structure, this linear-in-current magnetoresistance reaches 0.2\% at current density of $10^6$ A cm$^{-2}$. △ Less

Submitted 1 June, 2015; originally announced June 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 91, 180402(R) (2015)

Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

Authors: J. A. Haigh, C. Ciccarelli, A. C. Betz, A. Irvine, V. Novák, T. Jungwirth, J. Wunderlich

Abstract: The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magne… ▽ More The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction. △ Less

Submitted 1 May, 2015; originally announced May 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 91 140409 (2014)

Electrical switching of an antiferromagnet

Authors: Peter Wadley, Bryn Howells, Jakub Zelezny, Carl Andrews, Victoria Hills, Richard P. Campion, Vit Novak, Frank Freimuth, Yuriy Mokrousov, Andrew W. Rushforth, Kevin W. Edmonds, Bryan L. Gallagher, Tomas Jungwirth

Abstract: Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the ke… ▽ More Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted by Neel is the equivalence of antiferromagnets and ferromagnets for effects that are an even function of the magnetic moment. Based on even-in-moment relativistic transport phenomena, we demonstrate room-temperature electrical switching between two stable configurations combined with electrical read-out in antiferromagnetic CuMnAs thin film devices. Our magnetic memory is insensitive to and produces no magnetic field perturbations which illustrates the unique merits of antiferromagnets for spintronics. △ Less

Submitted 20 July, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 16 pages, 4 figures

Journal ref: P. Wadley et al., Science 10.1126/science.aab1031 (2016)

Current induced torques in structures with ultra-thin IrMn antiferromagnet

Authors: H. Reichlová, D. Kriegner, V. Holý, K. Olejník, V. Novák, M. Yamada, K. Miura, S. Ogawa, H. Takahashi, T. Jungwirth, J. Wunderlich

Abstract: Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to i… ▽ More Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to investigate the role of the antiferromagnetic order in the ultra-thin IrMn films in the observed torques. In a Ta/IrMn/CoFeB structure, IrMn in the high-temperature phase diminishes the torque in the CoFeB ferromagnet. At low temperatures, the antidam** torque in CoFeB flips sign as compared to the reference Ta/CoFeB structure, suggesting that IrMn in the antiferromagnetic phase governs the net torque acting on the ferromagnet. At low temperatures, current induced torque signatures are observed also in a Ta/IrMn structure comprising no ferromagnetic layer. △ Less

Submitted 20 July, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 92, 165424 (2015)

Magnonic Charge Pum** via Spin-Orbit Coupling

Authors: Chiara Ciccarelli, Kjetil M. D. Hals, Andrew Irvine, Vit Novak, Yaroslav Tserkovnyak, Hidekazu Kurebayashi, Arne Brataas, Andrew Ferguson

Abstract: The interplay between spin, charge, and orbital degrees of freedom has led to the development of spintronic devices like spin-torque oscillators, spin-logic devices, and spin-transfer torque magnetic random-access memories. In this development spin pum**, the process where pure spin-currents are generated from magnetisation precession, has proved to be a powerful method for probing spin physics… ▽ More The interplay between spin, charge, and orbital degrees of freedom has led to the development of spintronic devices like spin-torque oscillators, spin-logic devices, and spin-transfer torque magnetic random-access memories. In this development spin pum**, the process where pure spin-currents are generated from magnetisation precession, has proved to be a powerful method for probing spin physics and magnetisation dynamics. The effect originates from direct conversion of low energy quantised spin-waves in the magnet, known as magnons, into a flow of spins from the precessing magnet to adjacent normal metal leads. The spin-pum** phenomenon represents a convenient way to electrically detect magnetisation dynamics, however, precessing magnets have been limited so far to pump pure spin currents, which require a secondary spin-charge conversion element such as heavy metals with large spin Hall angle or multi-layer layouts to be detectable. Here, we report the experimental observation of charge pum** in which a precessing ferromagnet pumps a charge current, demonstrating direct conversion of magnons into high-frequency currents via the relativistic spin-orbit interaction. The generated electric current, differently from spin currents generated by spin-pum**, can be directly detected without the need of any additional spin to charge conversion mechanism and amplitude and phase information about the relativistic current-driven magnetisation dynamics. The charge-pum** phenomenon is generic and gives a deeper understanding of the recently observed spin-orbit torques, of which it is the reciprocal effect and which currently attract interest for their potential in manipulating magnetic information. Furthermore, charge pum** provides a novel link between magnetism and electricity and may find application in sourcing alternating electric currents. △ Less

Submitted 11 November, 2014; originally announced November 2014.

Comments: 3 figures

Report number: NBI QDEV CMT 2014

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

Authors: N. Tesarova, D. Butkovicova, R. P. Campion, A. W. Rushforth, K. W. Edmonds, P. Wadley, B. L. Gallagher, E. Schmoranzerova, F. Trojanek, P. Maly, P. Motloch, V. Novak, T. Jungwirth, P. Nemec

Abstract: We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis o… ▽ More We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert dam** constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert dam** and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession dam** is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode. △ Less

Submitted 19 May, 2014; originally announced May 2014.

Comments: 19 pages, 8 figures

Journal ref: Phys. Rev. B 90, 155203 (2014)

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Authors: P. Wadley, V. Novák, R. P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Zelezný, J. Gazquez, M. A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Masek, R. Bertacco, V. Holy, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, C. T. Foxon, J. Wunderlich, T. Jungwirth

Abstract: Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and c… ▽ More Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics. △ Less

Submitted 14 February, 2014; originally announced February 2014.

Comments: 16 pages, 5 figures, Published in Nature Communications (2013)

Journal ref: Nat. Commun. 4:2322

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Authors: T. Jungwirth, J. Wunderlich, V. Novak, K. Olejnik, B. L. Gallagher, R. P. Campion, K. W. Edmonds, A. W. Rushforth, A. J. Ferguson, P. Nemec

Abstract: Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that… ▽ More Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat. △ Less

Submitted 14 July, 2014; v1 submitted 7 October, 2013; originally announced October 2013.

Comments: 47 pages, 41 figures

Journal ref: Rev. Mod. Phys. 86, 855 (2014)

Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As

Authors: N. Tesarova, T. Ostatnicky, V. Novak, K. Olejnik, J. Subrt, C. T. Ellis, A. Mukherjee, J. Lee, G. M. Sipahi, J. Sinova, J. Hamrle, T. Jungwirth, P. Nemec, J. Cerne, K. Vyborny

Abstract: Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on M… ▽ More Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on Mn-do**s and Curie temperatures and find a clear blue shift of the dominant peak at energy exceeding the host material band gap. These results are discussed in the general context of the GaAs host band structure and also within the framework of the k.p and mean-field kinetic-exchange model of the (Ga,Mn)As band structure. We find a semi-quantitative agreement between experiment and theory and discuss the role of disorder-induced non-direct transitions on magneto-optical properties of (Ga,Mn)As. △ Less

Submitted 27 August, 2013; originally announced August 2013.

Comments: 18 pages