Showing 1–6 of 6 results for author: Nordin, L

Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films

Authors: Pooja D. Reddy, Leland Nordin, Lillian Hughes, Anna-Katharina Preidl, Kunal Mukherjee

Abstract: Bulk PbSnSe has a two-phase region or miscibility gap as the crystal changes from a Van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions with large contrast in the electrical, optical, and thermal properties across this transition. With an aim to understand and harness this transition in thin films de… ▽ More Bulk PbSnSe has a two-phase region or miscibility gap as the crystal changes from a Van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions with large contrast in the electrical, optical, and thermal properties across this transition. With an aim to understand and harness this transition in thin films devices, we epitaxially integrate PbSnSe on GaAs by molecular beam epitaxy using an in-situ PbSe surface treatment and show a significantly reduced two-phase region by stabilizing the Pnma layered structure out to Pb$_{0.45}$Sn$_{0.55}$Se, beyond the bulk-limit of Pb$_{0.25}$Sn$_{0.75}$Se. Pushing further, we directly access metastable two-phase epitaxial films of layered and rocksalt grains that are nearly identical in composition around Pb$_{0.5}$Sn$_{0.5}$Se and entirely circumvent the miscibility gap. We present microstructural evidence for an incomplete displacive transformation from rocksalt to layered structure in these films that we speculate occurs during the sample cool down to room temperature after synthesis. In situ temperature-cycling experiments on a Pb$_{0.58}$Sn$_{0.42}$Se rocksalt film reproduce characteristic attributes of a displacive transition and show a modulation in electronic properties. We find well-defined orientation relationships between the phases formed and reveal unconventional strain relief mechanisms involved in the crystal structure transformation, using transmission electron microscopy. Overall, our work adds a scalable thin film integration route to harnessing the dramatic contrast in material properties in PbSnSe across a potentially ultrafast structural transition. △ Less

Submitted 27 March, 2024; v1 submitted 2 November, 2023; originally announced November 2023.

Comments: 29 pages, 11 figures

High operating temperature plasmonic infrared detectors

Authors: L. Nordin, A. J. Muhowski, D. Wasserman

Abstract: III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures. However, T2SLs have struggled to meet the performance metrics set by the longstanding infrared detector material of choice, HgCdTe. Recently, epitaxial plasmonic dete… ▽ More III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures. However, T2SLs have struggled to meet the performance metrics set by the longstanding infrared detector material of choice, HgCdTe. Recently, epitaxial plasmonic detector architectures have demonstrated T2SL detector performance comparable to HgCdTe in the 77 K - 195 K temperature range. Here we demonstrate a high operating temperature plasmonic T2SL detector architecture with high-performance operation at temperatures accessible with two-stage thermoelectric coolers. Specifically, we demonstrate long-wave infrared plasmonic detectors operating at temperatures as high as 230 K while maintaining dark currents below the "Rule 07" heuristic. At a detector operating temperature of 230 K, we realize 22.8% external quantum efficiency in a detector absorber only 372 nm thick ($\simλ_0 /25$) with peak specific detectivity of $2.29x10^{9}$ cm Hz$^{1/2}$ W$^{-1}$ at 9.6 $μ$m, well above commercial detectors at the same operating temperature. △ Less

Submitted 12 January, 2022; originally announced January 2022.

Comments: The following article has been submitted to Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/journal/apl

Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

Authors: Jarod Meyer, Aaron J. Muhowski, Leland J. Nordin, Eamonn T. Hughes, Brian B. Haidet, Daniel Wasserman, Kunal Mukherjee

Abstract: We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin film… ▽ More We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin films are achievable despite threading dislocation densities exceeding $10^9$ $cm^{-2}$ arising from island growth on the nearly 8% lattice- and crystal-structure-mismatched GaAs substrate. Using quasi-continuous-wave and time-resolved photoluminescence, we show Shockley-Read-Hall recombination is slow in our high dislocation density PbSe films at room temperature, a hallmark of defect tolerance. Power-dependent photoluminescence and high injection excess carrier lifetimes at room temperature suggest that degenerate Auger recombination limits the efficiency of our films, though the Auger recombination rates are significantly lower than equivalent, III-V bulk materials and even a bit slower than expectations for bulk PbSe. Consequently, the combined effects of defect tolerance and low Auger recombination rates yield an estimated peak internal quantum efficiency of roughly 30% at room temperature, unparalleled in the MWIR for a severely lattice-mismatched thin film. We anticipate substantial opportunities for improving performance by optimizing crystal growth as well as understanding Auger processes in thin films. These results highlight the unique opportunity to harness the unusual chemical bonding in PbSe and related IV-VI semiconductors for heterogeneously integrated mid-infrared light sources constrained by tight thermal budgets in new device designs. △ Less

Submitted 28 August, 2021; originally announced August 2021.

Comments: 24 pages, 6 figures

Journal ref: APL Materials 9, 111112 (2021)

Ultra-Thin All-Epitaxial Plasmonic Detectors

Authors: Leland Nordin, Priyanka Petluru, Abhilasha Kamboj, Aaron J. Muhowski, Daniel Wasserman

Abstract: We present an infrared photodetector leveraging an all-epitaxial device architecture consisting of a 'designer' plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident light is coupled into surface plasmon-polariton modes at the detector/'designer' metal interface, and the strong confinement of these modes allows for a… ▽ More We present an infrared photodetector leveraging an all-epitaxial device architecture consisting of a 'designer' plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident light is coupled into surface plasmon-polariton modes at the detector/'designer' metal interface, and the strong confinement of these modes allows for a sub-diffractive ($\sim λ_0 / 33$) detector absorber layer thickness, effectively decoupling the detector's absorption efficiency and dark current. We demonstrate high-performance detectors operating at non-cryogenic temperatures (T = 195 K), without sacrificing external quantum efficiency, and superior to well established and commercially-available detectors. This work provides a practical and scalable plasmonic optoelectronic device architecture with real world mid-infrared applications. △ Less

Submitted 14 October, 2021; v1 submitted 8 July, 2021; originally announced July 2021.

Enhanced Room Temperature Infrared LEDs using Monolithically Integrated Plasmonic Materials

Authors: Andrew F. Briggs, Leland Nordin, Aaron J. Muhowski, Evan Simmons, Pankul Dhingra, Minjoo L. Lee, Viktor A. Podolskiy, Daniel Wasserman, Seth R. Bank

Abstract: Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epita… ▽ More Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode (LED), leading to a ~5.6 x enhancement over an otherwise identical non-plasmonic control sample. Devices exhibited optical powers comparable, and temperature performance far superior, to commercially-available devices. △ Less

Submitted 25 August, 2020; v1 submitted 6 May, 2020; originally announced May 2020.

Comments: Journal letter, four pages, five figures

Enhanced Emission from Ultra-Thin Long Wavelength Infrared Superlattices on Epitaxial Plasmonic Materials

Authors: L. Nordin, K. Li, A. Briggs, E. Simmons, S. Bank, V. A. Podolskiy, D. Wasserman

Abstract: Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement in photoluminescence from ultra-thin (total thickness of 1/32-th wavelength) long wavelength infrared (LWIR) superlattices grown on highly doped semiconductor d… ▽ More Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement in photoluminescence from ultra-thin (total thickness of 1/32-th wavelength) long wavelength infrared (LWIR) superlattices grown on highly doped semiconductor designer metal virtual substrates when compared to the same superlattice grown on an undoped virtual substrate. Analytical and numerical models of the emission process via a Dyadic Greens function formalism are in agreement with experimental results and relate the observed enhancement of emission to a combination of Purcell enhancement due to surface plasmon modes as well as directionality enhancement due to cavity-substrate-emitter interaction. The results presented provide a potential path towards efficient, ultra-subwavelength LWIR emitter devices, as well as a monolithic epitaxial architecture offering the opportunity to investigate the ultimate limits of light-matter interaction in coupled plasmonic/optoelectronic materials. △ Less

Submitted 24 October, 2019; originally announced October 2019.