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Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Authors:
L. A. Tracy,
E. P. Nordberg,
R. W. Young,
C. Borras Pinilla,
H. L. Stalford,
G. A. Ten Eyck,
K. Eng,
K. D. Childs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages se…
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We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.
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Submitted 29 October, 2010;
originally announced November 2010.
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Capacitance modeling of complex topographical silicon quantum dot structures
Authors:
H. L. Stalford,
R. Young,
E. P. Nordberg,
James. E. Levy,
Carlos Borras Pinilla,
M. S. Carroll
Abstract:
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to d…
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Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to develop a three dimensional (3D) classical capacitance model. The agreement of the capacitances of the classical model is tested against two different, experimentally measured, topographically complex silicon QD geometries. Agreement with experiment, within 10-20%, is demonstrated for the two structures when the details of the structure are transferred from the CAD to the model capturing the full 3D topography. Small uncertainty in device dimensions due to uncontrolled variation in processing, like layer thickness and gate size, are calculated to be sufficient to explain the disagreement. The sensitivity of the capacitances to small variations in the structure also highlights the limits of accuracy of capacitance models for QD analysis. We furthermore observe that a critical density, the metal insulator transition, can be used as a good approximation of the metallic edge of the quantum dot when electron density in the dot is calculated directly with a semi-classical simulation.
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Submitted 18 November, 2009;
originally announced November 2009.
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Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
Authors:
E. P. Nordberg,
H. L. Stalford,
R. Young,
G. A. Ten Eyck,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between t…
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Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system.
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Submitted 18 September, 2009;
originally announced September 2009.
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Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
Authors:
E. P. Nordberg,
G. A. Ten Eyck,
H. L. Stalford,
R. P. Muller,
R. W. Young,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect…
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We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.
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Submitted 11 September, 2009; v1 submitted 19 June, 2009;
originally announced June 2009.
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The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
Authors:
L. A. Tracy,
E. H. Hwang,
K. Eng,
G. A. Ten Eyck,
E. P. Nordberg,
K. Childs,
M. S. Carroll,
M. P. Lilly,
S. Das Sarma
Abstract:
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($σ$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density…
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By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($σ$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density-dependent conductivity vanishes as $σ(n) \propto (n - n_p)^p$, with the exponent $p \sim 1.2$ being consistent with a percolation transition. The `metallic' behavior of $σ(T)$ for $n > n_p$ is shown to be well-described by a semi-classical Boltzmann theory, and we observe the standard weak localization-induced negative magnetoresistance behavior, as expected in a normal Fermi liquid, in the metallic phase.
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Submitted 18 May, 2009; v1 submitted 9 November, 2008;
originally announced November 2008.
