Disentanglement of intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt
Authors:
Utkarsh Shashank,
Yoji Nakamura,
Yu Kusaba,
Takafumi Tomoda,
Razia Nongjai,
Asokan Kandasami,
Rohit Medwal,
Rajdeep Singh Rawat,
Hironori Asada,
Surbhi Gupta,
Yasuhiro Fukuma
Abstract:
The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in dam**-li…
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The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in dam**-like torque efficiency θ_DL due to the modified SHE, but the mechanism behind this enhancement is not clear. In this paper, we study θ_DL at different temperatures (100-293 K) to disentangle the intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt. We observe a crossover of intrinsic to extrinsic side-jump mechanism as the implantation dose increases from 2*10^16 ions/cm2 to 1*10^17 ions/cm2. A sudden decrease in the intrinsic spin Hall conductivity is counterbalanced by the increase in the side-jump induced SHE efficiency. These results conclude that studying θ_DL as a function of implantation dose, and also as a function of temperature, is important to understand the physical mechanism contributing to SHE, which has so far been unexplored in incorporating non-metallic element in 5d transition metals.
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Submitted 7 November, 2022;
originally announced November 2022.
Enhancement of concentration of XeV and GeV centers in nanocrystalline diamond through He+ irradiation
Authors:
T. Chakraborty,
K. J. Sankaran,
K. Srinivasu,
R. Nongjai,
K. Asokan,
C. H. Chen,
H. Niu,
K. Haenen
Abstract:
Atomic defect centers in diamond have been widely exploited in numerous quantum applications like quantum information, sensing, quantum photonics and so on. In this context, there is always a requirement to improve and optimize the preparation procedure to generate the defect centers in controlled fashion, and to explore new defect centers which can have the potential to overcome the current techn…
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Atomic defect centers in diamond have been widely exploited in numerous quantum applications like quantum information, sensing, quantum photonics and so on. In this context, there is always a requirement to improve and optimize the preparation procedure to generate the defect centers in controlled fashion, and to explore new defect centers which can have the potential to overcome the current technological challenges. Through this letter we report enhancing the concentration of Ge and Xe vacancy centers in nanocrystalline diamond (NCD) by means of He+ irradiation. We have demonstrated controlled growth of NCD by chemical vapor deposition (CVD) and implantation of Ge and Xe ions into the CVD-grown samples. NCDs were irradiated with He+ ions and characterized through optical spectroscopy measurements. Recorded photoluminescence results revealed a clear signature of enhancement of the Xe-related and Ge vacancies in NCDs.
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Submitted 23 March, 2021;
originally announced March 2021.
