Showing 1–10 of 10 results for author: Nong, H

Revisiting Over-smoothing and Over-squashing Using Ollivier-Ricci Curvature

Authors: Khang Nguyen, Hieu Nong, Vinh Nguyen, Nhat Ho, Stanley Osher, Tan Nguyen

Abstract: Graph Neural Networks (GNNs) had been demonstrated to be inherently susceptible to the problems of over-smoothing and over-squashing. These issues prohibit the ability of GNNs to model complex graph interactions by limiting their effectiveness in taking into account distant information. Our study reveals the key connection between the local graph geometry and the occurrence of both of these issues… ▽ More Graph Neural Networks (GNNs) had been demonstrated to be inherently susceptible to the problems of over-smoothing and over-squashing. These issues prohibit the ability of GNNs to model complex graph interactions by limiting their effectiveness in taking into account distant information. Our study reveals the key connection between the local graph geometry and the occurrence of both of these issues, thereby providing a unified framework for studying them at a local scale using the Ollivier-Ricci curvature. Specifically, we demonstrate that over-smoothing is linked to positive graph curvature while over-squashing is linked to negative graph curvature. Based on our theory, we propose the Batch Ollivier-Ricci Flow, a novel rewiring algorithm capable of simultaneously addressing both over-smoothing and over-squashing. △ Less

Submitted 31 May, 2023; v1 submitted 28 November, 2022; originally announced November 2022.

Comments: Accepted at ICML 2023; 24 pages, 4 figures

Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl

Authors: Huiyu Nong, Qinke Wu, Junyang Tan, Yujie Sun, Rongxu Zheng, Rongjie Zhang, Shilong Zhao, Bilu Liu

Abstract: In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer \b{eta}-type zirconium nitride chloride (\b{eta}-ZrNCl) is isolated f… ▽ More In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer \b{eta}-type zirconium nitride chloride (\b{eta}-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ~3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blue shift of its out-of-plane A1g peak at ~189 cm-1. Importantly, this A1g peak is absent in monolayer, suggesting that it is a fingerprint to quickly identify monolayer and for the thickness determination of 2D ZrNCl. The back-gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 108. These results suggest the potential of 2D \b{eta}-ZrNCl for electronic applications. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: 14 pages, 4 figures

Over-the-Air Aggregation for Federated Learning: Waveform Superposition and Prototype Validation

Authors: Huayan Guo, Yifan Zhu, Haoyu Ma, Vincent K. N. Lau, Kaibin Huang, Xiaofan Li, Huabin Nong, Mingyu Zhou

Abstract: In this paper, we develop an orthogonal-frequency-division-multiplexing (OFDM)-based over-the-air (OTA) aggregation solution for wireless federated learning (FL). In particular, the local gradients in massive IoT devices are modulated by an analog waveform and are then transmitted using the same wireless resources. To this end, achieving perfect waveform superposition is the key challenge, which i… ▽ More In this paper, we develop an orthogonal-frequency-division-multiplexing (OFDM)-based over-the-air (OTA) aggregation solution for wireless federated learning (FL). In particular, the local gradients in massive IoT devices are modulated by an analog waveform and are then transmitted using the same wireless resources. To this end, achieving perfect waveform superposition is the key challenge, which is difficult due to the existence of frame timing offset (TO) and carrier frequency offset (CFO). In order to address these issues, we propose a two-stage waveform pre-equalization technique with a customized multiple access protocol that can estimate and then mitigate the TO and CFO for the OTA aggregation. Based on the proposed solution, we develop a hardware transceiver and application software to train a real-world FL task, which learns a deep neural network to predict the received signal strength with global positioning system information. Experiments verify that the proposed OTA aggregation solution can achieve comparable performance to offline learning procedures with high prediction accuracy. △ Less

Submitted 27 October, 2021; originally announced October 2021.

Periodontitis and preeclampsia in pregnancy: A systematic review and meta-analysis

Authors: Quynh-Anh Le, Rahena Akhter, Kimberly M. Coulton, Ngoc T. N Vo, Le T. Y Duong, Hoang V. Nong, Albert Yaacoub, George Condous, Joerg Eberhard, Ralph Nanan

Abstract: Objectives: A conflicting body of evidence suggests localized periodontal inflammation to spread systemically during pregnancy inducing adverse pregnancy outcomes. This systematic review and meta-analysis aimed to specifically evaluate the relationship between periodontitis and preeclampsia. Methods: Electronic searches were carried out in Medline, Pubmed, Cochrane Controlled Clinical Trial Regist… ▽ More Objectives: A conflicting body of evidence suggests localized periodontal inflammation to spread systemically during pregnancy inducing adverse pregnancy outcomes. This systematic review and meta-analysis aimed to specifically evaluate the relationship between periodontitis and preeclampsia. Methods: Electronic searches were carried out in Medline, Pubmed, Cochrane Controlled Clinical Trial Register to identify and select observational case-control and cohort studies that analyzed the association between periodontal disease and preeclampsia. Prisma guidelines and Moose checklist were followed. Results: Thirty studies including six cohorts and twenty-four case-control studies were selected. Periodontitis was significantly associated with increased risk for preeclampsia, especially in a subgroup analysis including cohort studies and subgroup analysis with lower-middle-income countries. Conclusion: Periodontitis appears as a significant risk factor for preeclampsia, which might be even more pronounced in lower-middle-income countries. △ Less

Submitted 9 August, 2021; originally announced August 2021.

Comments: 58 pages, 13 figures

Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy

Authors: T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. -M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, K. Belashchenko, S. Dhillon, H. Jaffrès

Abstract: Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inv… ▽ More Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pum** measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pum** for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion. △ Less

Submitted 12 December, 2020; originally announced December 2020.

Comments: 20 pages

Journal ref: Applied Physics Reviews 7, 041409 (2020)

Growth of Two-dimensional Compound Materials: Controllability, Material Quality, and Growth Mechanism

Authors: Lei Tang, Junyang Tan, Huiyu Nong, Bilu Liu, Hui-Ming Cheng

Abstract: CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made… ▽ More CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications. △ Less

Submitted 10 December, 2020; originally announced December 2020.

Comments: 39 pages, 7 figures

Journal ref: Accounts of Materials Research 2020

Ultrafast terahertz detectors based on three-dimensional meta-atoms

Authors: B. Paulillo, S. Pirotta, H. Nong, P. Crozat, S. Guilet, G. Xu, S. Dhillon, L. H. Li, A. G. Davies, E. H. Linfield, R. Colombelli

Abstract: Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this relatively unexplored region of the electromagnetic spectrum. In particular, semiconductor-based ultrafast THz receivers are required for compact, ultrafast spectro… ▽ More Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this relatively unexplored region of the electromagnetic spectrum. In particular, semiconductor-based ultrafast THz receivers are required for compact, ultrafast spectroscopy and communication systems, and to date, quantum well infrared photodetectors (QWIPs) have proved to be an excellent technology to address this given their intrinsic ps-range response However, with research focused on diffraction-limited QWIP structures (lambda/2), RC constants cannot be reduced indefinitely, and detection speeds are bound to eventually meet un upper limit. The key to an ultra-fast response with no intrinsic upper limit even at tens of GHz is an aggressive reduction in device size, below the diffraction limit. Here we demonstrate sub-wavelength (lambda/10) THz QWIP detectors based on a 3D split-ring geometry, yielding ultra-fast operation at a wavelength of around 100 μm. Each sensing meta-atom pixel features a suspended loop antenna that feeds THz radiation in the ~20 m3 active volume. Arrays of detectors as well as single-pixel detectors have been implemented with this new architecture, with the latter exhibiting ultra-low dark currents below the nA level. This extremely small resonator architecture leads to measured optical response speeds - on arrays of 300 devices - of up to ~3 GHz and an expected device operation of up to tens of GHz, based on the measured S-parameters on single devices and arrays. △ Less

Submitted 19 January, 2018; originally announced January 2018.

Journal ref: Optica 4, 1451-1456 (2017)

Resetting Piezoresponse Force Microscopy: Towards a real quantitative technique

Authors: A. Gomez, H. T. T Nong, S. Mercone, T. Puig, X. Obradors

Abstract: A nanometric needle sensor mounted in an Atomic Force Microscopy allows systematic picometer-range distance measurements. This force sensing device is used in Piezoresponse Force Microscopy (PFM) as a distance sensor, by employing the cantilever spring constant as the conversion factor opening a pathway to explore the piezoelectric effect at the nanoscale. The force-distance equivalence is achieve… ▽ More A nanometric needle sensor mounted in an Atomic Force Microscopy allows systematic picometer-range distance measurements. This force sensing device is used in Piezoresponse Force Microscopy (PFM) as a distance sensor, by employing the cantilever spring constant as the conversion factor opening a pathway to explore the piezoelectric effect at the nanoscale. The force-distance equivalence is achieved if the force sensor does not disturb the system to study, solely. In this manuscript we report a systematic study in which different Lead Zirconate Titanate (PZT) materials, having different d33 values, are measured following the standard theory available for PFM. Both in resonance and out of resonance measurements demonstrate that PFM cannot be considered quantitative. After performing the measurements, we propose a correction of the standard theory employed in PFM by considering the force exerted by the material as a variable. The g33 parameter, inherent to piezoelectricity, governs the amount of force available from the system. A comparison of piezoelectric stiffness for the case of a nanoscale site contact region, similar to the one it is found while performing PFM, is provided. Such stiffness is well below the cantilever stiffness, limiting and diminishing the material movement, as the piezoelectric material does not have enough stroke to induce the intended displacement. A correction factor, named Open Piezopotential Gauge, accounts for these effects, which is used to correct the measurements carried out in PZT materials towards a real quantitative PFM. △ Less

Submitted 30 November, 2017; originally announced November 2017.

Comments: 3 figures

Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning

Authors: Shovon Pal, Hanond Nong, Sergej Markmann, Nadezhda Kukharchyk, Sascha R. Valentin, Sven Scholz, Arne Ludwig, Claudia Bock, Ulrich Kunze, Andreas D. Wieck, Nathan Jukam

Abstract: The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is e… ▽ More The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gates. An asymmetric triangular potential in the heterostructure enables ultrawide electrical tuning of ISR which is an order of magnitude higher as compared to the equivalent square well. For a single triangular well, we achieve a coupling strength of 0.52 THz, with a normalized coupling ratio of 0.26. △ Less

Submitted 14 April, 2015; originally announced April 2015.

Comments: 20 pages, 5 figures

Infrared transmission spectroscopy of charge carriers in self-assembled InAs quantum dots under surface electric fields

Authors: Shovon Pal, Sascha R. Valentin, Nadezhda Kukharchyk, Hanond Nong, Alireza B. Parsa, Gunther Eggeler, Arne Ludwig, Nathan Jukam, Andreas D. Wieck

Abstract: We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external magnetic field. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown within the ultra high vacuum conditions of molecular beam epita… ▽ More We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external magnetic field. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown within the ultra high vacuum conditions of molecular beam epitaxy to voltage-tune the device, while a two dimensional electron gas (2DEG) serves as back contact. Spacings of the hole sublevels are indirectly calculated using the photoluminescence spectroscopy along with FTIR spectroscopy. The observed spacings fit well to the calculated values for both electrons and holes. Additionally, the intersubband resonances of the 2DEG are enhanced due to the QD layer on top of the device. △ Less

Submitted 18 September, 2014; originally announced September 2014.