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Strain tunable electronic ground states in two-dimensional iridate thin films
Authors:
Donghan Kim,
Byungmin Sohn,
Yeonjae Lee,
Jeongkeun Song,
Mi Kyung Kim,
Minjae Kim,
Tae Won Noh,
Changyoung Kim
Abstract:
Quantum phases of matter such as superconducting, ferromagnetic and Wigner crystal states are often driven by the two-dimensionality (2D) of correlated systems. Meanwhile, spin-orbit coupling (SOC) is a fundamental element leading to nontrivial topology which gives rise to quantum phenomena such as the large anomalous Hall effect and nontrivial superconductivity. However, the search for controllab…
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Quantum phases of matter such as superconducting, ferromagnetic and Wigner crystal states are often driven by the two-dimensionality (2D) of correlated systems. Meanwhile, spin-orbit coupling (SOC) is a fundamental element leading to nontrivial topology which gives rise to quantum phenomena such as the large anomalous Hall effect and nontrivial superconductivity. However, the search for controllable platforms with both 2D and SOC has been relatively overlooked so far. Here, we control and study the electronic ground states of iridate ultrathin films having both 2D and SOC by angle-resolved photoemission spectroscopy (ARPES) and dynamical mean field theory (DMFT) calculations. The metallicity of SrIrO$_3$ ultrathin films is controlled down to a monolayer by dimensional and strain manipulation. Our results suggest that the iridate ultrathin films can be a controllable 2D SOC platform exhibiting a variety of phenomena for future functional devices.
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Submitted 5 March, 2024;
originally announced March 2024.
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Dynamic magnetic phase transition induced by parametric magnon pum**
Authors:
Jun-Yi Shan,
Jonathan B. Curtis,
Mingyao Guo,
Chang Jae Roh,
C. R. Rotundu,
Young S. Lee,
Prineha Narang,
Tae Won Noh,
Eugene Demler,
D. Hsieh
Abstract:
Uncovering pathways to optically drive magnetic order-disorder transitions on ultrashort timescales can lead to the realization of novel out-of-equilibrium quantum phenomena. A long-sought pathway is to directly excite a highly non-thermal energy-momentum distribution of magnons, bypassing both charge and lattice degrees of freedom. However, this remains elusive owing to the weak coupling and larg…
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Uncovering pathways to optically drive magnetic order-disorder transitions on ultrashort timescales can lead to the realization of novel out-of-equilibrium quantum phenomena. A long-sought pathway is to directly excite a highly non-thermal energy-momentum distribution of magnons, bypassing both charge and lattice degrees of freedom. However, this remains elusive owing to the weak coupling and large momentum mismatch between photons and magnons. Here we demonstrate strong parametric excitation of magnons across the entire Brillouin zone of the antiferromagnetic insulator Sr$_2$Cu$_3$O$_4$Cl$_2$ by periodically modulating the superexchange interaction with the electric field of light. The excitation efficiency is greatly enhanced by tuning to the van Hove singularity in the magnon spectrum, sufficient to transiently collapse the antiferromagnetic state using a pulsed laser field of 10$^9$ V/m. The order parameter recovery timescale increases by over 1000 times as a function of excitation density, reflecting a crossover from high- to low-energy magnon dominated decay dynamics. This electric-field induced parametric magnon pum** mechanism is applicable to a broad range of magnetic insulators and opens up the possibility of dynamically engineering magnon distributions by design.
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Submitted 17 April, 2024; v1 submitted 14 February, 2024;
originally announced February 2024.
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Spontaneous breaking of mirror symmetry beyond critical do** in Pb-Bi2212
Authors:
Saegyeol Jung,
Byeongjun Seok,
Chang jae Roh,
Donghan Kim,
Yeonjae Lee,
San Kang,
Shigeyuki Ishida,
Shik Shin,
Hiroshi Eisaki,
Tae Won Noh,
Dongjoon Song,
Changyoung Kim
Abstract:
Identifying ordered phases and their underlying symmetries is the first and most important step toward understanding the mechanism of high-temperature superconductivity; critical behaviors of ordered phases are expected to be correlated with superconductivity. Efforts to find such ordered phases have been focused on symmetry breaking in the pseudogap region while the Fermi liquid-like metal region…
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Identifying ordered phases and their underlying symmetries is the first and most important step toward understanding the mechanism of high-temperature superconductivity; critical behaviors of ordered phases are expected to be correlated with superconductivity. Efforts to find such ordered phases have been focused on symmetry breaking in the pseudogap region while the Fermi liquid-like metal region beyond the so-called critical do** $p_{c}$ has been regarded as a trivial disordered state. Here, we used rotational anisotropy second harmonic generation and uncovered a broken mirror symmetry in the Fermi liquid-like phase in (Bi,Pb)$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ with $p = 0.205 > p_{c}$. By tracking the temperature evolution of the symmetry-breaking response, we verify an order parameter-like behavior with the onset temperature $T_{up}$ at which the strange metal to Fermi liquid-like-metal crossover takes place. Complementary angle-resolved photoemission study showed that the quasiparticle coherence between $\mathrm{CuO_{2}}$ bilayers is enhanced in proportion to the symmetry-breaking response as a function of temperature, indicating that the change in metallicity and symmetry breaking are linked. These observations contradict the conventional quantum disordered scenario for over-critical-doped cuprates and provide new insight into the nature of the quantum critical point in cuprates.
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Submitted 8 September, 2023; v1 submitted 5 June, 2023;
originally announced June 2023.
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Electric control of two-dimensional Van Hove singularity in oxide ultra-thin films
Authors:
Donghan Kim,
Younsik Kim,
Byungmin Sohn,
Minsoo Kim,
Bongju Kim,
Tae Won Noh,
Changyoung Kim
Abstract:
Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) are known to lead to divergent DOS in two-dimensional (2D) systems. Despite the recent interest in VHSs, only a few controllable cases have been reported to date. In this work, we investigate the electron…
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Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) are known to lead to divergent DOS in two-dimensional (2D) systems. Despite the recent interest in VHSs, only a few controllable cases have been reported to date. In this work, we investigate the electronic band structures of a 2D VHS with angle-resolved photoemission spectroscopy and control transport properties by utilizing an atomically ultrathin SrRuO$_3$ film. By applying electric fields with alkali metal deposition and ionic-liquid gating methods, we precisely control the 2D VHS, and the sign of the charge carrier. Use of a tunable 2D VHS in an atomically flat oxide film could serve as a new strategy to realize infinite DOS near the Fermi level, thereby allowing efficient tuning of electric properties.
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Submitted 17 February, 2023; v1 submitted 13 February, 2023;
originally announced February 2023.
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Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface
Authors:
Hyang Keun Yoo,
Daniel Schwarz,
Soren Ulstrup,
Woo** Kim,
Chris Jozwiak,
Aaron Bostwick,
Tae Won Noh,
Eli Rotenberg,
Young Jun Chang
Abstract:
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing,…
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We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~10 nm thick film. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compared to that of SrTiO3. These results suggest that the control and tunability of SrOx segregation is applicable to the design of a new functional electronic devices in the semiconducting SrTiO3 based heterostructure.
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Submitted 13 October, 2022;
originally announced October 2022.
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Tuning orbital-selective phase transitions in a two-dimensional Hund's correlated system
Authors:
Eun Kyo Ko,
Sungsoo Hahn,
Changhee Sohn,
Sangmin Lee,
Seung-Sup B. Lee,
Byungmin Sohn,
Jeong Rae Kim,
Jaeseok Son,
Jeongkeun Song,
Youngdo Kim,
Donghan Kim,
Miyoung Kim,
Choong H. Kim,
Changyoung Kim,
Tae Won Noh
Abstract:
Hund's rule coupling ($\textit{J}$) has attracted much attention recently for its role in the description of the novel quantum phases of multi orbital materials. Depending on the orbital occupancy, $\textit{J}$ can lead to various intriguing phases. However, experimental confirmation of the orbital occupancy dependency has been difficult as controlling the orbital degrees of freedom normally accom…
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Hund's rule coupling ($\textit{J}$) has attracted much attention recently for its role in the description of the novel quantum phases of multi orbital materials. Depending on the orbital occupancy, $\textit{J}$ can lead to various intriguing phases. However, experimental confirmation of the orbital occupancy dependency has been difficult as controlling the orbital degrees of freedom normally accompanies chemical inhomogeneities. Here, we demonstrate a method to investigate the role of orbital occupancy in $\textit{J}$ related phenomena without inducing inhomogeneities. By growing SrRuO$_3$ monolayers on various substrates with symmetry-preserving interlayers, we gradually tune the crystal field splitting and thus the orbital degeneracy of the Ru $\textit{t$_2$$_g$}$ orbitals. It effectively varies the orbital occupancies of two-dimensional (2D) ruthenates. Via in-situ angle-resolved photoemission spectroscopy, we observe a progressive metal-insulator transition (MIT). It is found that the MIT occurs with orbital differentiation: concurrent opening of a band insulating gap in the $\textit{d$_x$$_y$}$ band and a Mott gap in the $\textit{d$_x$$_z$$_/$$_y$$_z$}$ bands. Our study provides an effective experimental method for investigation of orbital-selective phenomena in multi-orbital materials.
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Submitted 18 October, 2022; v1 submitted 11 October, 2022;
originally announced October 2022.
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Experimental verification of polar structures in ultrathin BaTiO_{3} layers using resonant x-ray reflectivity
Authors:
Kook Tae Kim,
Yeong Jae Shinb,
Sung-** Kang,
Ryung Kim,
Miyoung Kim,
Tae Won Noh,
Yongseong Choi,
Seo Hyoung Chang,
Dong Ryeol Lee
Abstract:
Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventio…
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Functional devices with ultrathin ferroelectric layers have been attracted as a promising candidate for next-generation memory and logic device applications. Using the ultrathin ferroelectric layers, particularly approaching the two-dimensional limit, however, it is still challenging to control ferroelectric switching and to observe ferroelectricity by spectroscopic tools. In particular, conventional methods such as electrical measurements and piezoelectric response force microscopy are very limited due to leakage currents and the smallness of the ferroelectric signals. Here, we show that the ferroelectricity of ultrathin SrRuO3/BaTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates can be measured using resonant x-ray reflectivity (RXRR). This experimental technique can provide an element-specific electronic depth profile as well as increased sensitivity to Ti off-center displacements at the Ti K pre-edge. The depth-sensitivity of RXRR selectively detects the strong polarization dependence of the Ti pre-edge features of ultrathin BaTiO3 layers while discriminating the contribution of the SrTiO3 substrate. This technique verified that the BaTiO3 layer can be ferroelectric down to the lowest experimental limit of a critical thickness of 2.5 unit cells. Our results can open a novel way to explore ultrathin ferroelectric-based nano-electronic devices.
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Submitted 15 July, 2022;
originally announced July 2022.
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Heteroepitaxial control of Fermi liquid, Hund metal, and Mott insulator phases in the single-atomic-layer limit
Authors:
Jeong Rae Kim,
Byungmin Sohn,
Hyeong Jun Lee,
Sangmin Lee,
Eun Kyo Ko,
Sungsoo Hahn,
Sangjae Lee,
Younsik Kim,
Donghan Kim,
Hong Joon Kim,
Youngdo Kim,
Jaeseok Son,
Charles H. Ahn,
Frederick J. Walker,
Ara Go,
Miyoung Kim,
Choong H. Kim,
Changyoung Kim,
Tae Won Noh
Abstract:
Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenom…
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Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenomena appear within a few atomic layers from the interface, thus limiting the application of available experimental probes. Here, we utilize atomic-scale epitaxy and photoemission spectroscopy to demonstrate the interface control of correlated electronic phases in atomic-scale ruthenate--titanate heterostructures. While bulk SrRuO$_3$ is a ferromagnetic metal, the heterointerfaces exclusively realize three distinct correlated phases in the single-atomic-layer limit. Our theory reveals that atomic-scale structural proximity effects lead to the emergence of Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO$_3$. These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure.
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Submitted 8 March, 2022;
originally announced March 2022.
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Flexoelectric control of a ferromagnetic metal
Authors:
Wei Peng,
Se Young Park,
Chang Jae Roh,
Junsik Mun,
Hwiin Ju,
**kwon Kim,
Eun Kyo Ko,
Zhengguo Liang,
Sungsoo Hahn,
**feng Zhang,
Liang Si,
Yong ** Jo,
Tae Heon Kim,
Changyoung Kim,
Lingfei Wang,
Miyoung Kim,
Jong Seok Lee,
Tae Won Noh,
Daesu Lee
Abstract:
Electric fields have played a key role in discovering and controlling exotic electronic states of condensed matter. However, electric fields usually do not work in metals as free carriers tend to screen electrostatic fields. While a pseudo-electric field generated by inhomogeneous lattice strain, namely a flexoelectric field, can in principle work in all classes of materials, it remains experiment…
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Electric fields have played a key role in discovering and controlling exotic electronic states of condensed matter. However, electric fields usually do not work in metals as free carriers tend to screen electrostatic fields. While a pseudo-electric field generated by inhomogeneous lattice strain, namely a flexoelectric field, can in principle work in all classes of materials, it remains experimentally unexplored in metals. Here, using heteroepitaxy and atomic-scale imaging, we show that flexoelectric fields can polarize a metallic oxide SrRuO3 with unexpectedly large Ru off-center displacements. We also observe that the flexoelectrically induced polar state of SrRuO3 leads to sizable lattice expansion, similar to the electrostrictive expansion caused by ionic displacements in dielectrics under an external electric field. We further suggest that flexoelectrically driven Ru off-centering promotes strong coupling between lattice and electronic degrees of freedom, possibly enhancing the ferromagnetism of SrRuO3. Beyond conventional electric fields, flexoelectric fields may universally engender novel electronic states and their control via pure atomic displacements in a nondestructive and fast manner.
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Submitted 7 March, 2022;
originally announced March 2022.
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Transport and optical properties of the chiral semiconductor Ag3AuSe2
Authors:
Juyeon Won,
Soyeun Kim,
Martin Gutierrez-Amigo,
Simon Bettler,
Bumjoo Lee,
Jaeseok Son,
Tae Won Noh,
Ion Errea,
Maia G. Vergniory,
Peter Abbamonte,
Fahad Mahmood,
Daniel P. Shoemaker
Abstract:
Previous band structure calculations predicted Ag3AuSe2 to be a semiconductor with a band gap of approximately 1 eV. Here, we report single crystal growth of Ag3AuSe2 and its transport and optical properties. Single crystals of Ag3AuSe2 were synthesized by slow-cooling from the melt, and grain sizes were confirmed to be greater than 2 mm using electron backscatter diffraction. Optical and transpor…
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Previous band structure calculations predicted Ag3AuSe2 to be a semiconductor with a band gap of approximately 1 eV. Here, we report single crystal growth of Ag3AuSe2 and its transport and optical properties. Single crystals of Ag3AuSe2 were synthesized by slow-cooling from the melt, and grain sizes were confirmed to be greater than 2 mm using electron backscatter diffraction. Optical and transport measurements reveal that Ag3AuSe2 is a highly resistive semiconductor with a band gap of and activation energy around 0.3 eV. Our first-principles calculations show that the experimentally-determined band gap lies between the predicted band gaps from GGA and hybrid functionals. We predict band inversion to be possible by applying tensile strain. The sensitivity of the gap to Ag/Au ordering, chemical substitution, and heat treatment merit further investigation.
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Submitted 14 January, 2022;
originally announced January 2022.
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Observation of spin-dependent dual ferromagnetism in perovskite ruthenates
Authors:
Sungsoo Hahn,
Byungmin Sohn,
Minjae Kim,
Jeong Rae Kim,
Soonsang Huh,
Younsik Kim,
Wonshik Kyung,
Minsoo Kim,
Donghan Kim,
Youngdo Kim,
Tae Won Noh,
Ji Hoon Shim,
Changyoung Kim
Abstract:
We performed in-situ angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES (SARPES) experiments to investigate the relationship between electronic band structures and ferromagnetism in SrRuO$_3$ (SRO) thin films. Our high-quality ARPES and SARPES results show clear spin-lifted band structures. The spin polarization is strongly dependent on momentum around the Fermi level, where…
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We performed in-situ angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES (SARPES) experiments to investigate the relationship between electronic band structures and ferromagnetism in SrRuO$_3$ (SRO) thin films. Our high-quality ARPES and SARPES results show clear spin-lifted band structures. The spin polarization is strongly dependent on momentum around the Fermi level, whereas it becomes less dependent at high-binding energies. This experimental observation matches our dynamical mean-field theory (DMFT) results very well. As temperature increases from low to the Curie temperature, spin-splitting gap decreases and band dispersions become incoherent. Based on the ARPES study and theoretical calculation results, we found that SRO possesses spin-dependent electron correlations in which majority and minority spins are localized and itinerant, respectively. Our finding explains how ferromagnetism and electronic structure are connected, which has been under debate for decades in SRO.
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Submitted 15 December, 2021; v1 submitted 15 November, 2021;
originally announced November 2021.
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Observation of metallic electronic structure in a single-atomic-layer oxide
Authors:
Byungmin Sohn,
Jeong Rae Kim,
Choong H. Kim,
Sangmin Lee,
Sungsoo Hahn,
Younsik Kim,
Soonsang Huh,
Donghan Kim,
Youngdo Kim,
Wonshik Kyung,
Minsoo Kim,
Miyoung Kim,
Tae Won Noh,
Changyoung Kim
Abstract:
Correlated electrons in transition metal oxides (TMOs) exhibit a variety of emergent phases. When TMOs are confined to a single-atomic-layer thickness, experiments so far have shown that they usually lose diverse properties and become insulators. In an attempt to extend the range of electronic phases of the single-atomic-layer oxide, we search for a metallic phase in a monolayer-thick epitaxial Sr…
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Correlated electrons in transition metal oxides (TMOs) exhibit a variety of emergent phases. When TMOs are confined to a single-atomic-layer thickness, experiments so far have shown that they usually lose diverse properties and become insulators. In an attempt to extend the range of electronic phases of the single-atomic-layer oxide, we search for a metallic phase in a monolayer-thick epitaxial SrRuO$_3$ film. Combining atomic-scale epitaxy and angle-resolved photoemission measurements, we show that the monolayer SrRuO$_3$ is a strongly correlated metal. Systematic investigation reveals that the interplay between dimensionality and electronic correlation makes the monolayer SrRuO$_3$ an incoherent metal with orbital-selective correlation. Furthermore, the unique electronic phase of the monolayer SrRuO$_3$ is found to be highly tunable, as charge modulation demonstrates an incoherent-to-coherent crossover of the two-dimensional metal. Our work emphasizes the potentially rich phases of single-atomic-layer oxides and provides a guide to the manipulation of their two-dimensional correlated electron systems.
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Submitted 22 September, 2021;
originally announced September 2021.
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Nematic response revealed by coherent phonon oscillations in BaFe$_2$As$_2$
Authors:
Min-Cheol Lee,
Inho Kwak,
Yeongseon Lee,
Bumjoo Lee,
Byung Cheol Park,
Thomas Wolf,
Tae Won Noh,
Kyungwan Kim
Abstract:
We investigate coherent phonon oscillations of BaFe$_2$As$_2$ using optical pump-probe spectroscopy. Time-resolved optical reflectivity shows periodic modulations due to $A_{1g}$ coherent phonon of $c$-axis arsenic vibrations. Optical probe beams polarized along the orthorhombic $a$- and $b$-axes reveal that the initial phase of coherent oscillations shows a systematic deviation as a function of t…
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We investigate coherent phonon oscillations of BaFe$_2$As$_2$ using optical pump-probe spectroscopy. Time-resolved optical reflectivity shows periodic modulations due to $A_{1g}$ coherent phonon of $c$-axis arsenic vibrations. Optical probe beams polarized along the orthorhombic $a$- and $b$-axes reveal that the initial phase of coherent oscillations shows a systematic deviation as a function of temperature, although these oscillations arise from the same $c$-axis arsenic vibrations. The oscillation-phase remains anisotropic even in the tetragonal structure, reflecting a nematic response of BaFe$_2$As$_2$. Our study suggests that investigation on the phase of coherent phonon oscillations in optical reflectivity can offer unique evidence of a nematic order strongly coupled to a lattice instability.
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Submitted 15 October, 2021; v1 submitted 8 June, 2021;
originally announced June 2021.
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In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Aaron Bostwick,
Andrew L. Walter,
Tae Won Noh,
Eli Rotenberg,
Young Jun Chang
Abstract:
The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed…
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The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.
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Submitted 12 May, 2021;
originally announced May 2021.
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Growth and atomically resolved polarization map** of ferroelectric $Bi_2WO_6$ thin film
Authors:
Jihwan Jeong,
Junsik Mun,
Saikat Das,
**kwon Kim,
Jeong Rae Kim,
Wei Peng,
Miyoung Kim,
Tae Won Noh
Abstract:
Aurivillius ferroelectric $Bi_2WO_6$ (BWO) encompasses a broad range of functionalities, including robust fatigue-free ferroelectricity, high photocatalytic activity, and ionic conductivity. Despite these promising characteristics, an in-depth study on the growth of BWO thin films and ferroelectric characterization, especially at the atomic scale, is still lacking. Here, we report pulsed laser dep…
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Aurivillius ferroelectric $Bi_2WO_6$ (BWO) encompasses a broad range of functionalities, including robust fatigue-free ferroelectricity, high photocatalytic activity, and ionic conductivity. Despite these promising characteristics, an in-depth study on the growth of BWO thin films and ferroelectric characterization, especially at the atomic scale, is still lacking. Here, we report pulsed laser deposition (PLD) of BWO thin films on (001) $SrTiO_3$ substrates and characterization of ferroelectricity using the scanning transmission electron microscopy (STEM) and piezoresponse force microscopy (PFM) techniques. We show that the background oxygen gas pressure used during PLD growth mainly determines the phase stability of BWO films, whereas the influence of growth temperature is comparatively minor. Atomically resolved STEM study of a fully strained BWO film revealed collective in-plane polar off-centering displacement of W atoms. We estimated the spontaneous polarization value based on polar displacement map** to be about 54 $\pm$ 4 $μC cm^{-2}$, which is in good agreement with the bulk polarization value. Furthermore, we found that pristine film is composed of type-I and type-II domains, with mutually orthogonal polar axes. Complementary PFM measurements further elucidated that the coexisting type-I and type-II domains formed a multidomain state that consisted of 90$°$ domain walls (DWs) alongside multiple head-to-head and tail-to-tail 180$°$ DWs. Application of an electrical bias led to in-plane 180$°$ polarization switching and 90$°$ polarization rotation, highlighting a unique aspect of domain switching, which is immune to substrate-induced strain.
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Submitted 26 January, 2021; v1 submitted 26 January, 2021;
originally announced January 2021.
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Two-channel anomalous Hall effect in SrRuO3
Authors:
Graham Kimbell,
Paul M. Sass,
Bart Woltjes,
Eun Kyo Ko,
Tae Won Noh,
Weida Wu,
Jason W. A. Robinson
Abstract:
The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to two-dimensional skyrmions in the film around the coercive field; however, the sign of the anomalous Hall effect in SrRuO$_3$ can change as a function of saturation magn…
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The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to two-dimensional skyrmions in the film around the coercive field; however, the sign of the anomalous Hall effect in SrRuO$_3$ can change as a function of saturation magnetization. Here we report Hall peaks in SrRuO$_3$ in which volumetric magnetometry measurements and magnetic force microscopy indicate that the peaks result from the superposition of two anomalous Hall channels with opposite sign. These channels likely form due to thickness variations in SrRuO$_3$, creating two spatially separated magnetic regions with different saturation magnetizations and coercive fields. The results are central to the development of strongly correlated materials for spintronics.
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Submitted 11 April, 2020; v1 submitted 14 February, 2020;
originally announced February 2020.
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Electronic band structure of (111) $SrRuO_{3}$ thin film$-$an angle-resolved photoemission spectroscopy study
Authors:
Hanyoung Ryu,
Yukiaki Ishida,
Bongju Kim,
Jeong Rae Kim,
Woo ** Kim,
Yoshimitsu Kohama,
Shusaku Imajo,
Zhuo Yang,
Wonshik Kyung,
Sungsoo Hahn,
Byungmin Sohn,
Inkyung Song,
Minsoo Kim,
Soonsang Huh,
Jongkeun Jung,
Donghan Kim,
Tae Won Noh,
Saikat Das,
Changyoung Kim
Abstract:
We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a ch…
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We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a characteristic "kink" in the band dispersion. The self-energy analysis using the Einstein model suggests five optical phonon modes covering an energy range 44 to 90 meV contribute to the coupling. Besides, we show that the quasiparticle spectral intensity at the Fermi level is considerably suppressed, and two prominent peaks appear in the valance band spectrum at binding energies of 0.8 eV and 1.4 eV, respectively. We discuss the possible implications of these observations. Overall, our work demonstrates that high-quality thin films of oxides with large spin-orbit coupling can be grown along the polar (111) orientation by the PLD technique, enabling \textit{in situ} electronic band structure study. This could allow for characterizing the thickness-dependent evolution of band structure of (111) heterostructures$-$a prerequisite for exploring possible topological quantum states in the bilayer limit.
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Submitted 25 January, 2021; v1 submitted 11 February, 2020;
originally announced February 2020.
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Sign-tunable anomalous Hall effect induced by two-dimensional symmetry-protected nodal structures in ferromagnetic perovskite oxide thin films
Authors:
Byungmin Sohn,
Eunwoo Lee,
Se Young Park,
Wonshik Kyung,
**woong Hwang,
Jonathan D. Denlinger,
Minsoo Kim,
Donghan Kim,
Bongju Kim,
Hanyoung Ryu,
Soonsang Huh,
Ji Seop Oh,
Jong Keun Jung,
Dong** Oh,
Younsik Kim,
Moonsup Han,
Tae Won Noh,
Bohm-Jung Yang,
Changyoung Kim
Abstract:
Magnetism and spin-orbit coupling (SOC) are two quintessential ingredients underlying novel topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by SOC, the nodal structures become a source of Berry curvature; this leads to a large anomalous Hall effect (AHE). Contrary to three-dimensional systems th…
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Magnetism and spin-orbit coupling (SOC) are two quintessential ingredients underlying novel topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by SOC, the nodal structures become a source of Berry curvature; this leads to a large anomalous Hall effect (AHE). Contrary to three-dimensional systems that naturally host nodal points/lines, two-dimensional (2D) systems can possess stable nodal structures only when proper crystalline symmetry exists. Here we show that 2D spin-polarized band structures of perovskite oxides generally support symmetry-protected nodal lines and points that govern both the sign and the magnitude of the AHE. To demonstrate this, we performed angle-resolved photoemission studies of ultrathin films of SrRuO$_3$, a representative metallic ferromagnet with SOC. We show that the sign-changing AHE upon variation in the film thickness, magnetization, and chemical potential can be well explained by theoretical models. Our study is the first to directly characterize the topological band structure of 2D spin-polarized bands and the corresponding AHE, which could facilitate new switchable devices based on ferromagnetic ultrathin films.
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Submitted 4 July, 2021; v1 submitted 10 December, 2019;
originally announced December 2019.
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$\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and electronic structure of BaSnO$_3$ film
Authors:
Shoresh Soltani,
Sungyun Hong,
Bongju Kim,
Donghan Kim,
Jong Keun Jun,
Byungmin Sohn,
Tae Won Noh,
Kookrin Char,
Changyoung Kim
Abstract:
We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were \emph{ex-situ} transferred from PLD chamber to ultra-high vacu…
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We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were \emph{ex-situ} transferred from PLD chamber to ultra-high vacuum (UHV) chambers for annealing, LEED and ARPES studies. UHV annealing starting from 300$^{\circ}$C up to 550$^{\circ}$C, followed by LEED and ARPES measurements show 1$\times$1 surfaces with non-dispersive energy-momentum bands. The 1$\times$1 surface reconstructs into a $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ one at the annealing temperature of 700$^{\circ}$C where the ARPES data shows clear dispersive bands with valence band maximum located around 3.3 eV below Fermi level. While the $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction is stable under further UHV annealing, it is reversed to 1$\times$1 surface by annealing the sample in 400 mTorr oxygen at 600$^{\circ}$C. Another UHV annealing at 600$^{\circ}$C followed by LEED and ARPES measurements, suggests that LEED $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and ARPES dispersive bands are reproduced. Our results provide a better picture of electronic structure of BaSnO$_3$ surface and are suggestive of role of oxygen vacancies in the reversible $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction.
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Submitted 22 March, 2020; v1 submitted 2 December, 2019;
originally announced December 2019.
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Ultrafast dynamics in the Lifshitz-type 5${d}$ pyrochlore antiferromagnet Cd$_{2}$Os$_{2}$O$_{7}$
Authors:
Inho Kwak,
Min-Cheol Lee,
Byung Cheol Park,
Choong H. Kim,
Bumjoo Lee,
C. W. Seo,
J. Yamaura,
Z. Hiroi,
Tae Won Noh,
K. W. Kim
Abstract:
We investigate the ultrafast dynamics of Cd$_2$Os$_2$O$_7$, a prototype material showing a Lifshitz-type transition as a function of temperature. In the paramagnetic metallic state, the photo-reflectivity shows a sub-picosecond relaxation, followed by a featureless small offset. In the antiferromagnetic state slightly below $T_N$, however, the photo-reflectivity resurges over hundreds of picosecon…
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We investigate the ultrafast dynamics of Cd$_2$Os$_2$O$_7$, a prototype material showing a Lifshitz-type transition as a function of temperature. In the paramagnetic metallic state, the photo-reflectivity shows a sub-picosecond relaxation, followed by a featureless small offset. In the antiferromagnetic state slightly below $T_N$, however, the photo-reflectivity resurges over hundreds of picoseconds, which goes beyond the usual realm of the effective-temperature model. Our observations are consistent with the Lifshitz phase transition of Cd$_2$Os$_2$O$_7$ driven by the evolution of the local magnetic moment.
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Submitted 28 November, 2019;
originally announced November 2019.
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Reflection anisotropy experiments to study non-equilibrium dynamics of electronic nematicity
Authors:
Inho Kwak,
Jaeseok Son,
Bumjoo Lee,
Thomas Wolf,
Changhee Sohn,
Tae Won Noh,
K. W. Kim
Abstract:
Electronic nematicity have attracted a great deal of interest in the unconventional superconductivity research. We present an experimental method to investigate reflectivity anisotropy by the electronic nematicity and its non-equilibrium dynamics. Our experimental results on Ba(Fe$_{0.955}$Co$_{0.045}$)$_{2}$As$_{2}$ single crystal clearly feature the broken four-fold symmetry along directions par…
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Electronic nematicity have attracted a great deal of interest in the unconventional superconductivity research. We present an experimental method to investigate reflectivity anisotropy by the electronic nematicity and its non-equilibrium dynamics. Our experimental results on Ba(Fe$_{0.955}$Co$_{0.045}$)$_{2}$As$_{2}$ single crystal clearly feature the broken four-fold symmetry along directions parallel to Fe-Fe bonding. Numerical simulations using WVASE from Woollam Co. demonstrate that our method is highly reliable under various experimental conditions. Finally, we perform time-resolved reflectivity anisotropy measurement confirming that photo-excitation by 1.55 eV photons suppresses the reflectivity anisotropy due to nematic order.
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Submitted 28 November, 2019;
originally announced November 2019.
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Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal
Authors:
Seung Gyo Jeong,
Taewon Min,
Sungmin Woo,
Jiwoong Kim,
Yu-Qiao Zhang,
Seong Won Cho,
Jaeseok Son,
Young-Min Kim,
Jung Hoon Han,
Sungkyun Park,
Hu Young Jeong,
Hiromichi Ohta,
Suyoun Lee,
Tae Won Noh,
Jaekwang Lee,
Woo Seok Choi
Abstract:
Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled an…
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Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition.
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Submitted 24 November, 2019;
originally announced November 2019.
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Hidden structural transition in epitaxial Ca$_{0.5}$Sr$_{0.5}$IrO$_{3}$/SrTiO$_{3}$ thin film
Authors:
W. T. **,
H. Gretarsson,
S. Y. Jang,
Chang-Yong Kim,
T. W. Noh,
Young-june Kim
Abstract:
A structural transition in an ABO$_{3}$ perovskite thin film involving the change of the BO$_{6}$ octahedral rotation pattern can be hidden under the global lattice symmetry imposed by the substrate and often easily overlooked. We carried out high-resolution x-ray diffraction experiments to investigate the structures of epitaxial Ca$_{0.5}$Sr$_{0.5}$IrO$_{3}$ (CSIO) perovskite iridate films grown…
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A structural transition in an ABO$_{3}$ perovskite thin film involving the change of the BO$_{6}$ octahedral rotation pattern can be hidden under the global lattice symmetry imposed by the substrate and often easily overlooked. We carried out high-resolution x-ray diffraction experiments to investigate the structures of epitaxial Ca$_{0.5}$Sr$_{0.5}$IrO$_{3}$ (CSIO) perovskite iridate films grown on the SrTiO$_{3}$ (STO) and GdScO$_{3}$ (GSO) substrates in detail. Although the CSIO/STO film layer displays a global tetragonal lattice symmetry evidenced by the reciprocal space map**, synchrotron x-ray data indicates that its room temperature structure is monoclinic due to Glazer's a$^{+}$a$^{-}$c$^{-}$-type rotation of the IrO$_{6}$ octahedra. In order to accommodate the lower-symmetry structure under the global tetragonal symmetry, the film breaks into four twinned domains, resulting in the splitting of the (half-integer, 0, integer) superlattice reflections. Surprisingly, the splitting of these superlattice reflections decrease with increasing temperature, eventually disappearing at T$_{S}$ = 510(5) K, which signals a structural transition to an orthorhombic phase with a$^{+}$a$^{-}$c$^{0}$ octahedral rotation. In contrast, the CSIO/GSO film displays a stable monoclinic symmetry with a$^{+}$b$^{-}$c$^{-}$ octahedral rotation, showing no structural instability caused by the substrate up to 520 K. Our study illustrates the importance of the symmetry in addition to the lattice mismatch of the substrate in determining the structure of epitaxial thin films.
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Submitted 1 November, 2019;
originally announced November 2019.
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Controllable thickness inhomogeneity and Berry-curvature-engineering of anomalous Hall effect in SrRuO3 ultrathin films
Authors:
Lingfei Wang,
Qiyuan Feng,
Han Gyeol Lee,
Eun Kyo Ko,
Qingyou Lu,
Tae Won Noh
Abstract:
In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect (THE) or inhomogeneous a…
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In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect (THE) or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the AHE of SrRuO3 ultrathin films with controllable inhomogeneities in film thickness (tSRO). By harnessing the step-flow growth of SrRuO3 films, we induced microscopically-ordered stripes with one-unit-cell differences in tSRO. The resultant spatial distribution of momentum-space Berry curvatures enables a two-channel AHE, which shows hump-like anomalies similar to the THE and can be continuously engineered via sub-unit-cell control of tSRO. In these inhomogeneous SRO films, we microscopically identified a two-step magnetic switching and stripe-like ferromagnetic domains. These features are fingerprints for distinguishing the two-channel AHE from the skyrmion-induced THE.
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Submitted 22 August, 2019;
originally announced August 2019.
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Evidence of structural evolution in Sr2RhO4 studied by time-resolved optical reflectivity spectroscopy
Authors:
Min-Cheol Lee,
Inho Kwak,
Choong H. Kim,
Bumjoo Lee,
Byung Chul Park,
Junyoung Kwon,
Wonshik Kyung,
Changyoung Kim,
Tae Won Noh,
Kyungwan Kim
Abstract:
We investigate ultrafast dynamics from photoinduced reflectivity of Sr2RhO4 by using femtosecond near-infrared pulses. We observe a clear temperature-dependent anomaly in its electronic dynamics which slows down below 160 K. In addition, coherent oscillations of the A1g symmetric 5.3-THz phonon exhibit a 90-degree shift in its initial phase across TS, indicating a structural change in octahedral r…
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We investigate ultrafast dynamics from photoinduced reflectivity of Sr2RhO4 by using femtosecond near-infrared pulses. We observe a clear temperature-dependent anomaly in its electronic dynamics which slows down below 160 K. In addition, coherent oscillations of the A1g symmetric 5.3-THz phonon exhibit a 90-degree shift in its initial phase across TS, indicating a structural change in octahedral rotation distortions. We propose that octahedral structure in Sr2RhO4 evolves at around TS, and it can influence on the non-equilibrium dynamics of photoinduced carriers as well as real-time phonon responses.
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Submitted 13 August, 2019;
originally announced August 2019.
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Anomalous anisotropic behaviour of spin-triplet proximity effect in Au/SrRuO$_3$/Sr$_2$RuO$_4$ junctions
Authors:
M. S. Anwar,
M. Kunieda,
R. Ishiguro,
S. R. Lee,
C. Sow,
J. W. A. Robinson,
S. Yonezawa,
T. W. Noh,
Y. Maeno
Abstract:
Spin-polarized supercurrents can be generated with magnetic inhomogeneity at a ferromagnet/spin-singlet-superconductor interface. In such systems, complex magnetic inhomogeneity makes it difficult to functionalise the spin-polarized supercurrents. However, spin-polarized supercurrents in ferromagnet/spin-triplet-superconductor junctions can be controlled by angle between magnetization and spin of…
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Spin-polarized supercurrents can be generated with magnetic inhomogeneity at a ferromagnet/spin-singlet-superconductor interface. In such systems, complex magnetic inhomogeneity makes it difficult to functionalise the spin-polarized supercurrents. However, spin-polarized supercurrents in ferromagnet/spin-triplet-superconductor junctions can be controlled by angle between magnetization and spin of Copper pairs ($d$-vector), that can effectively be utilized in develo** of a field of research known as superconducting spintronics. Recently, we found induction of spin-triplet correlation into a ferromagnet SrRuO$_3$ epitaxially deposited on a spin-triplet superconductor Sr$_2$RuO$_4$, without any electronic spin-flip scattering. Here, we present systematic magnetic field dependence of the proximity effect in Au/SrRuO$_3$/ Sr$_2$RuO$_4$ junctions. It is found that induced triplet correlations exhibit strong anisotropic field response. Such behaviour attributes to the rotation of the $d$-vector of Sr$_2$RuO$_4$. This anisotropic behaviour is in contrast with the vortex dynamic. Our results will stimulate study of interaction between ferromagnetism and unconventional superconductivity.
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Submitted 11 October, 2019; v1 submitted 11 July, 2019;
originally announced July 2019.
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Revealing electrically undetectable room temperature surface-mobility of bulky topological insulators by spectroscopic techniques
Authors:
Bumjoo Lee,
**su Kim,
Jonghyeon Kim,
Na Hyun Jo,
Yukiaki Ishida,
So Yeun Kim,
Min-Cheol Lee,
Inho Kwak,
Shik Shin,
Kyungwan Kim,
Jae Hoon Kim,
Myung-Hwa Jung,
Tae Won Noh,
Byung Cheol Park
Abstract:
High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical purposes. However, the detection of the surface-mobility has been hindered by the inevitable bulk conduction. Even in the case of high-quality crystals, the bu…
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High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical purposes. However, the detection of the surface-mobility has been hindered by the inevitable bulk conduction. Even in the case of high-quality crystals, the bulk state forms the dominant channel of the electrical current. Therefore, with electrical transport measurement, the surface-mobility can be resolved only below-micrometer-thick crystals. The evaluation of the surface-mobility becomes more challenging at higher temperatures, where phonons can play a role. Here, using spectroscopic techniques, we successfully evaluated the surface-mobility of Bi2Te3 (BT) at room temperature (RT). We acquired the effective masses and mean scattering times for both the surface and bulk states using angle-resolved photoemission and terahertz time-domain spectroscopy. We revealed a record-high surface-mobility for BT, exceeding 33,000 cm^2/(Vs) per surface sheet, despite intrinsic limitations by the coexisting bulk state as well as phonons at RT. Our findings partially support the interesting conclusion that the topological protection persists at RT. Our approach could be applicable to other topological materials possessing multiband structures near the Fermi level.
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Submitted 4 May, 2019;
originally announced May 2019.
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Observation of superconducting gap spectra of long-range proximity effect in Au/SrTiO$_3$/SrRuO$_3$/Sr$_2$RuO$_4$ tunnel junctions
Authors:
M. S. Anwar,
M. Kunieda,
R. Ishiguro,
S. R. Lee,
L. A. B. Olde Olthof,
J. W. A. Robinson,
S. Yonezawa,
T. W. Noh,
Y. Maeno
Abstract:
We observe an unconventional superconducting minigap induced into a ferromagnet SrRuO$_3$ from a spin-triplet superconductor Sr$_2$RuO$_4$ using a Au/SrTiO$_3$/SrRuO$_3$/Sr$_2$RuO$_4$ tunnel junction. Voltage bias differential conductance of the tunnel junctions exhibits V-shaped gap features around zero bias, corresponding to a decrease in the density-of-states with an opening of a superconductin…
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We observe an unconventional superconducting minigap induced into a ferromagnet SrRuO$_3$ from a spin-triplet superconductor Sr$_2$RuO$_4$ using a Au/SrTiO$_3$/SrRuO$_3$/Sr$_2$RuO$_4$ tunnel junction. Voltage bias differential conductance of the tunnel junctions exhibits V-shaped gap features around zero bias, corresponding to a decrease in the density-of-states with an opening of a superconducting minigap in SrRuO$_3$. Observation of a minigap at a surface of a 15~nm thick SrRuO$_3$ layers confirms the spin-triplet nature of induced superconductivity. The shape and temperature dependence of the gap features in the differential conductance indicate that the even-frequency $p$-wave correlations dominate, over odd-frequency $s$-wave correlations. Theoretical calculations support this $p$-wave scenario. Our work provides the density-of-states proof for $p$-wave Cooper pair penetration in a ferromagnet and significantly put forward our understanding of the $p$-wave spin-triplet proximity effect between spin-triplet superconductors and ferromagnets.
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Submitted 5 March, 2019;
originally announced March 2019.
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Enhanced flexoelectricity at reduced dimensions revealed by mechanically tunable quantum tunnelling
Authors:
Saikat Das,
Bo Wang,
Tula R. Paudel,
Sung Min Park,
Evgeny Y. Tsymbal,
Long-Qing Chen,
Daesu Lee,
Tae Won Noh
Abstract:
Flexoelectricity is a universal electromechanical coupling effect whereby all dielectric materials polarize in response to strain gradients. In particular, nanoscale flexoelectricity promises exotic phenomena and functions, but reliable characterization methods are required to unlock its potential. Here, we report anomalous mechanical control of quantum tunnelling that allows for characterizing na…
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Flexoelectricity is a universal electromechanical coupling effect whereby all dielectric materials polarize in response to strain gradients. In particular, nanoscale flexoelectricity promises exotic phenomena and functions, but reliable characterization methods are required to unlock its potential. Here, we report anomalous mechanical control of quantum tunnelling that allows for characterizing nanoscale flexoelectricity. By applying strain gradients with an atomic force microscope tip, we systematically polarize an ultrathin film of otherwise nonpolar SrTiO$_{3}$, and simultaneously measure tunnel current across it. The measured tunnel current exhibits critical behaviour as a function of strain gradients, which manifests large modification of tunnel barrier profiles via flexoelectricity. Further analysis of this critical behaviour reveals significantly enhanced flexocoupling strength in ultrathin SrTiO$_{3}$, compared to that in bulk, rendering flexoelectricity more potent at the nanoscale. Our study not only suggests possible applications exploiting dynamic mechanical control of quantum effect, but also paves the way to characterize nanoscale flexoelectricity.
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Submitted 4 February, 2019;
originally announced February 2019.
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Orbital-selective confinement effect of Ru $4d$ orbitals in SrRuO$_3$ ultrathin film
Authors:
Soonmin Kang,
Yi Tseng,
Beom Hyun Kim,
Seokhwan Yun,
Byungmin Sohn,
Bongju Kim,
Daniel McNally,
Eugenio Paris,
Choong H. Kim,
Changyoung Kim,
Tae Won Noh,
Sumio Ishihara,
Thorsten Schmitt,
Je-Geun Park
Abstract:
The electronic structure of SrRuO$_3$ thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru $4d$ orbitals. At the same time, we observe…
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The electronic structure of SrRuO$_3$ thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru $4d$ orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO$_3$ films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO$_6$ clusters.
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Submitted 24 December, 2018;
originally announced December 2018.
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Neutron Scattering Investigation of Rhenium Orbital Ordering in $3d-5d$ Double Perovskite Ca$_2$FeReO$_6$
Authors:
Bo Yuan,
J. P. Clancy,
J. A. Sears,
A. I. Kolesnikov,
M. B. Stone,
Z. Yamani,
Choongjae Won,
Namjung Hur,
B. C. Jeon,
T. W. Noh,
Arun Paramekanti,
Young-June Kim
Abstract:
We have carried out inelastic neutron scattering experiments to study magnetic excitations in ordered double perovskite Ca$_2$FeReO$_6$. We found a well-defined magnon mode with a bandwidth of $\sim$50meV below the ferri-magnetic ordering temperature ($T_c\sim$520K), similar to previously studied Ba$_2$FeReO$_6$. The spin excitation is gapless for most temperatures within the magnetically ordered…
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We have carried out inelastic neutron scattering experiments to study magnetic excitations in ordered double perovskite Ca$_2$FeReO$_6$. We found a well-defined magnon mode with a bandwidth of $\sim$50meV below the ferri-magnetic ordering temperature ($T_c\sim$520K), similar to previously studied Ba$_2$FeReO$_6$. The spin excitation is gapless for most temperatures within the magnetically ordered phase. However, a spin gap of $\sim$10meV opens up below $\sim$150K, which is well below the magnetic ordering temperature but coincides with a previously reported metal-insulator transition and onset of structural distortion. The observed temperature dependence of spin gap provides strong evidence for ordering of Re orbitals at $\sim$150~K, in accordance with earlier proposal put forward by Oikawa $\it{et.\,al}$ based on neutron diffraction [J. Phys. Soc. Jpn., $\bf{72}$, 1411 (2003)] as well as recent theoretical work by Lee and Marianetti [Phys. Rev. B, $\bf{97}$, 045102 (2018)]. The presence of separate orbital and magnetic ordering in Ca$_2$FeReO$_6$ suggests weak coupling between spin and orbital degrees of freedom and hints towards a sub-dominant role played by spin orbit coupling in describing its magnetism. In addition, we observed only one well-defined magnon band near magnetic zone boundary, which is incompatible with simple ferrimagnetic spin waves arising from Fe and Re local moments, but suggests a strong dam** of Re magnon mode.
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Submitted 5 December, 2018; v1 submitted 10 September, 2018;
originally announced September 2018.
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Abnormal $phase$ flip in coherent phonon oscillations of Ca$_2$RuO$_4$
Authors:
Min-Cheol Lee,
Choong H. Kim,
Inho Kwak,
J. Kim,
S. Yoon,
Byung Cheol Park,
Bumjoo Lee,
F. Nakamura,
C. Sow,
Y. Maeno,
T. W. Noh,
K. W. Kim
Abstract:
We employ an optical pump-probe technique to study coherent phonon oscillations in Ca$_2$RuO$_4$. We find that oscillation-amplitude of an $A_g$ symmetric phonon mode is strongly suppressed at 260 K, a putative transition point of orbital ordering. The oscillation also shows a gradual but huge change in its $phase$, such that the oscillation even flips over with a 180$^{\circ}$ change across the t…
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We employ an optical pump-probe technique to study coherent phonon oscillations in Ca$_2$RuO$_4$. We find that oscillation-amplitude of an $A_g$ symmetric phonon mode is strongly suppressed at 260 K, a putative transition point of orbital ordering. The oscillation also shows a gradual but huge change in its $phase$, such that the oscillation even flips over with a 180$^{\circ}$ change across the temperature. Density functional theory calculations indicate that the $A_g$ phonon has an eigenmode of octahedral distortion with conventional tilting along the $a$-axis and antipolar distortion of apical oxygen. Careful inspection of the lattice captures an unusually large antipolar distortion in low-temperature structures, which may play a crucial role for the phase transition at 260 K.
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Submitted 17 August, 2018;
originally announced August 2018.
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Unconventional anomalous Hall effect from antiferromagnetic domain walls of Nd2Ir2O7 thin films
Authors:
Woo ** Kim,
John H. Gruenewald,
Taekoo Oh,
Sangmo Cheon,
Bongju Kim,
Oleksandr B. Korneta,
Hwanbeom Cho,
Daesu Lee,
Yoonkoo Kim,
Miyoung Kim,
Je-Geun Park,
Bohm-Jung Yang,
Ambrose Seo,
Tae Won Noh
Abstract:
Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs…
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Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a non-coplanar AFM, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the two-fold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f-d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our study highlights the symmetry broken interface of AFM materials as a new means of exploring topological effects and their relevant applications.
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Submitted 6 July, 2018;
originally announced July 2018.
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Electronic characteristics of ultrathin SrRuO$_3$ films and their relationship with the metal$-$insulator transition
Authors:
Subeen Pang,
Yoonkoo Kim,
Yeong Jae Shin,
Byungmin Sohn,
SeungYong Lee,
Tae Won Noh,
Miyoung Kim
Abstract:
SrRuO$_3$ (SRO) films are known to exhibit insulating behavior as their thickness approaches four unit cells. We employ electron energy$-$loss (EEL) spectroscopy to probe the spatially resolved electronic structures of both insulating and conducting SRO to correlate them with the metal$-$insulator transition (MIT). Importantly, the central layer of the ultrathin insulating film exhibits distinct f…
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SrRuO$_3$ (SRO) films are known to exhibit insulating behavior as their thickness approaches four unit cells. We employ electron energy$-$loss (EEL) spectroscopy to probe the spatially resolved electronic structures of both insulating and conducting SRO to correlate them with the metal$-$insulator transition (MIT). Importantly, the central layer of the ultrathin insulating film exhibits distinct features from the metallic SRO. Moreover, EEL near edge spectra adjacent to the SrTiO$_3$ (STO) substrate or to the cap** layer are remarkably similar to those of STO. The site$-$projected density of states based on density functional theory (DFT) partially reflects the characteristics of the spectra of these layers. These results may provide important information on the possible influence of STO on the electronic states of ultrathin SRO.
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Submitted 14 December, 2017;
originally announced December 2017.
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Strong spin-phonon coupling unveiled by coherent phonon oscillations in Ca2RuO4
Authors:
Min-Cheol Lee,
Choong H. Kim,
Inho Kwak,
C. W. Seo,
C. H. Sohn,
F. Nakamura,
C. Sow,
Y. Maeno,
E. -A. Kim,
T. W. Noh,
K. W. Kim
Abstract:
We utilize near-infrared femtosecond pulses to investigate coherent phonon oscillations of Ca2RuO4. The coherent Ag phonon mode of the lowest frequency changes abruptly not only its amplitude but also the oscillation-phase as the spin order develops. In addition, the phonon mode shows a redshift entering the magnetically ordered state, which indicates a spin-phonon coupling in the system. Density…
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We utilize near-infrared femtosecond pulses to investigate coherent phonon oscillations of Ca2RuO4. The coherent Ag phonon mode of the lowest frequency changes abruptly not only its amplitude but also the oscillation-phase as the spin order develops. In addition, the phonon mode shows a redshift entering the magnetically ordered state, which indicates a spin-phonon coupling in the system. Density functional theory calculations reveal that the Ag oscillations result in octahedral tilting distortions, which are exactly in sync with the lattice deformation driven by the magnetic ordering. We suggest that the structural distortions by the spin-phonon coupling can induce the unusual oscillation-phase shift between impulsive and displacive type oscillations.
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Submitted 24 June, 2018; v1 submitted 8 December, 2017;
originally announced December 2017.
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Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films
Authors:
Lingfei Wang,
Rokyeon Kim,
Yoonkoo Kim,
Choong H. Kim,
Sangwoon Hwang,
Myung Rae Cho,
Yeong Jae Shin,
Saikat Das,
Jeong Rae Kim,
Sergei V. Kalinin,
Miyoung Kim,
Sang Mo Yang,
Tae Won Noh
Abstract:
Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applications. In the few-nanometer-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and de…
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Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applications. In the few-nanometer-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO3 films as a model system, we report an intrinsic tunneling conductance enhancement near the terrace edges. Scanning probe microscopy results demonstrate the existence of highly-conductive regions (tens of nanometers-wide) near the terrace edges. First-principles calculations suggest that the terrace edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling conductance enhancement can be discovered in other transition-metal-oxides and controlled by surface termination engineering. The controllable electronic reconstruction could facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases.
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Submitted 13 November, 2017;
originally announced November 2017.
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Charge transfer in iridate-manganite superlattices
Authors:
Satoshi Okamoto,
John Nichols,
Changhee Sohn,
Soy Yeun Kim,
Tae Won Noh,
Ho Nyung Lee
Abstract:
Charge transfer in superlattices consisting of SrIrO$_3$ and SrMnO$_3$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$_3$ and SrMnO$_3$, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, pro…
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Charge transfer in superlattices consisting of SrIrO$_3$ and SrMnO$_3$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$_3$ and SrMnO$_3$, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, providing a qualitative understanding of the experimental observation. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment with soft x-ray and optical spectroscopy. Our work thus demonstrates a new route to control electronic states in non-polar oxide heterostructures.
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Submitted 21 September, 2017;
originally announced September 2017.
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Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity
Authors:
Saikat Das,
Bo Wang,
Ye Cao,
Myung Rae Cho,
Yeong Jae Shin,
Sang Mo Yang,
Lingfei Wang,
Minu Kim,
Sergei V. Kalinin,
Long-Qing Chen,
Tae Won Noh
Abstract:
Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By co…
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Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale flexoelectric effect enables a controlled spatial modulation. In motion, the scanning probe tip thereby deterministically reconfigures the spatial distribution of vacancies. The ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration of mesoscale quantum phenomena, and engineering multifunctional oxide devices.
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Submitted 21 September, 2017;
originally announced September 2017.
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Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
Authors:
Yeong Jae Shin,
Lingfei Wang,
Yoonkoo Kim,
Ho-Hyun Nahm Daesu Lee,
Jeong Rae Kim,
Sang Mo Yang,
Jong-Gul Yoon,
**-Seok Chung,
Miyoung Kim,
Seo Hyoung Chang,
Tae Won Noh
Abstract:
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface at…
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With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.
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Submitted 10 August, 2017;
originally announced August 2017.
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Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers
Authors:
Lingfei Wang,
Myung Rae Cho,
Yeong Jae Shin,
Jeong Rae Kim,
Saikat Das,
Jong-Gul Yoon,
**-Seok Chung,
Tae Won Noh
Abstract:
Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through modifications of electrode materials. However, direct control of the FTJ performance through modifying the tunneling barrier has not been adequately explored. Here, ad…
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Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through modifications of electrode materials. However, direct control of the FTJ performance through modifying the tunneling barrier has not been adequately explored. Here, adding a new direction to FTJ research, we fabricated FTJs with BaTiO3 single barriers (SB-FTJs) and BaTiO3/SrTiO3 composite barriers (CB-FTJs), and reported a systematic study of FTJ performances by varying the barrier thicknesses and compositions. For the SB-FTJs, the TER is limited by pronounced leakage current for ultrathin barriers and extremely small tunneling current for thick barriers. For the CB-FTJs, the extra SrTiO3 barrier provides an additional degree of freedom to modulate the barrier potential and tunneling behavior. The resultant high tunability can be utilized to overcome the barrier thickness limits and enhance the overall CB-FTJ performances beyond those of SB-FTJ. Our results reveal a new paradigm to manipulate the FTJs through designing multilayer tunneling barriers with hybrid functionalities.
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Submitted 21 July, 2017;
originally announced July 2017.
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Charge-spin correlation in van der Waals antiferromagenet NiPS3
Authors:
So Yeun Kim,
Tae Yun Kim,
Luke J. Sandilands,
Soobin Sinn,
Min-Cheol Lee,
Jaeseok Son,
Sungmin Lee,
Ki-Young Choi,
Wondong Kim,
Byeong-Gyu Park,
C. Jeon,
Hyeong-Do Kim,
Cheol-Hwan Park,
Je-Geun Park,
S. J. Moon,
T. W. Noh
Abstract:
Strong charge-spin coupling is found in a layered transition-metal trichalcogenide NiPS3, a van derWaals antiferromagnet, from our study of the electronic structure using several experimental and theoretical tools: spectroscopic ellipsometry, x-ray absorption and photoemission spectroscopy, and density-functional calculations. NiPS3 displays an anomalous shift in the optical spectral weight at the…
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Strong charge-spin coupling is found in a layered transition-metal trichalcogenide NiPS3, a van derWaals antiferromagnet, from our study of the electronic structure using several experimental and theoretical tools: spectroscopic ellipsometry, x-ray absorption and photoemission spectroscopy, and density-functional calculations. NiPS3 displays an anomalous shift in the optical spectral weight at the magnetic ordering temperature, reflecting a strong coupling between the electronic and magnetic structures. X-ray absorption, photoemission and optical spectra support a self-doped ground state in NiPS3. Our work demonstrates that layered transition-metal trichalcogenide magnets are a useful candidate for the study of correlated-electron physics in two-dimensional magnetic material.
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Submitted 25 June, 2017; v1 submitted 20 June, 2017;
originally announced June 2017.
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Element-Specific Orbital Character in a Nearly-Free-Electron Superconductor Ag$_5$Pb$_2$O$_6$ Revealed by Core-Level Photoemission
Authors:
Soobin Sinn,
Kyung Dong Lee,
Choong Jae Won,
Ji Seop Oh,
Moonsup Han,
Young Jun Chang,
Namjung Hur,
Byeong-Gyu Park,
Changyoung Kim,
Hyeong-Do Kim,
Tae Won Noh
Abstract:
Ag$_5$Pb$_2$O$_6$ has attracted considerable attention due to its novel nearly-free-electron superconductivity, but its electronic structure and orbital character of the Cooper-pair electrons remain controversial. Here, we present a method utilizing core-level photoemission to show that Pb 6$s$ electrons dominate near the Fermi level. We observe a strongly asymmetric Pb 4$f_{7/2}$ core-level spect…
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Ag$_5$Pb$_2$O$_6$ has attracted considerable attention due to its novel nearly-free-electron superconductivity, but its electronic structure and orbital character of the Cooper-pair electrons remain controversial. Here, we present a method utilizing core-level photoemission to show that Pb 6$s$ electrons dominate near the Fermi level. We observe a strongly asymmetric Pb 4$f_{7/2}$ core-level spectrum, while a Ag 3$d_{5/2}$ spectrum is well explained by two symmetric peaks. The asymmetry in the Pb 4$f_{7/2}$ spectrum originates from the local attractive interaction between conducting Pb 6$s$ electrons and a Pb 4$f_{7/2}$ core hole, which implies a dominant Pb 6$s$ contribution to the metallic conduction. In addition, the observed Pb 4$f_{7/2}$ spectrum is not explained by the well-known Doniach-Šunjić lineshape for a simple metal. The spectrum is successfully generated by employing a Pb 6$s$ partial density of states from local density approximation calculations, thus confirming the Pb 6$s$ dominant character and free-electron-like density of states of Ag$_5$Pb$_2$O$_6$.
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Submitted 29 March, 2017;
originally announced March 2017.
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Interface control of ferroelectricity in a SrRuO3/BaTiO3/SrRuO3 capacitor and its critical thickness
Authors:
Yeong Jae Shin,
Yoonkoo Kim,
Sung-** Kang,
Ho-Hyun Nahm,
Pattukkannu Murugavel,
Jeong Rae Kim,
Myung Rae Cho,
Lingfei Wang,
Sang Mo Yang,
Jong-Gul Yoon,
**-Seok Chung,
Miyoung Kim,
Hua Zhou,
Seo Hyoung Chang,
Tae Won Noh
Abstract:
The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. Here, we demonstrate that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial…
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The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. Here, we demonstrate that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) ferroelectric capacitors. The SRO/BTO/SRO heterostructures were grown by the pulsed laser deposition (PLD) method. The top SRO/BTO interface grown at high PO2 (around 150 mTorr) usually exhibited a mixture of RuO2-BaO and SrO-TiO2 terminations. By reducing PO2, we obtained atomically sharp SRO/BTO top interfaces with uniform SrO-TiO2 termination. Using capacitor devices with symmetric and uniform interfacial termination, we were able to demonstrate for the first time that the ferroelectric (FE) critical thickness can reach the theoretical limit of 3.5 unit cells (u.c.).
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Submitted 6 February, 2017;
originally announced February 2017.
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Induced ferromagnetic moment at the interface between epitaxial SrRuO$_3$ film and Sr$_2$RuO$_4$ single crystal
Authors:
Seung Ran Lee,
Muhammad Shahbaz Anwar,
Yeong Jae Shin,
Min-Cheol Lee,
Yusuke Sugimoto,
Masanao Kunieda,
Shingo Yonezawa,
Yoshiteru Maeno,
Tae Won Noh
Abstract:
SrRuO$_3$ (SRO113) is an important material for device physics particularly as one of the best metallic oxide electrodes for ferroelectric devices. This oxide has moderate electron correlations with novel properties including ferromagnetic ordering, which can be utilized in future to spintronics and superconducting spintronics devices. Recently, we observed strongly enhanced magnetization of SRO11…
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SrRuO$_3$ (SRO113) is an important material for device physics particularly as one of the best metallic oxide electrodes for ferroelectric devices. This oxide has moderate electron correlations with novel properties including ferromagnetic ordering, which can be utilized in future to spintronics and superconducting spintronics devices. Recently, we observed strongly enhanced magnetization of SRO113 thin films grown on single crystals of the spin-triplet superconductor Sr$_2$RuO$_4$ (SRO214). To clarify the origin of such an enhancement, we conducted systematic investigations of magnetic properties of SRO113 films deposited on a variety of oxide substrates. We carefully subtracted the substrate contributions and found that the enhanced 2
magnetization occurs only for SRO113/SRO214 films. We further found that neither strain nor metallicity of the substrate plays any significant roles in the enhancement. The X-ray magnetic circular dichroism reveals that the substrate-induced strain does not switch the Ru4+ state from the low-spin to high-spin states. The film-thickness dependence of the magnetization of SRO113/SRO214 films strongly suggest that the additional magnetization arises due to the induction of magnetic moment into the SRO214 substrate over 20-nm depth. Our results imply new magnetic functionality that can trigger studies searching for yet unknown physical phenomena in magnetic ruthenates.
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Submitted 10 September, 2016;
originally announced September 2016.
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Electronic Structure of the Kitaev Material $α$-$\textrm{RuCl}_3$ Probed by Photoemission and Inverse Photoemission Spectroscopies
Authors:
Soobin Sinn,
Choong Hyun Kim,
Beom Hyun Kim,
Kyung Dong Lee,
Choong Jae Won,
Ji Seop Oh,
Moonsup Han,
Young Jun Chang,
Namjung Hur,
Hitoshi Sato,
Byeong-Gyu Park,
Changyoung Kim,
Hyeong-Do Kim,
Tae Won Noh
Abstract:
Recently, $α$-$\textrm{RuCl}_3$ has attracted much attention as a possible material realization of the honeycomb Kitaev model, which may stabilize a quantum-spin-liquid state. Compared to extensive studies on its magnetic properties, there is still a lack of understanding on its electronic structure, which is strongly related with its Kitaev physics. Here, the electronic structure of $α$-…
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Recently, $α$-$\textrm{RuCl}_3$ has attracted much attention as a possible material realization of the honeycomb Kitaev model, which may stabilize a quantum-spin-liquid state. Compared to extensive studies on its magnetic properties, there is still a lack of understanding on its electronic structure, which is strongly related with its Kitaev physics. Here, the electronic structure of $α$-$\textrm{RuCl}_3$ is investigated by photoemission (PE) and inverse photoemission (IPE) spectroscopies. The band gap, directly measured from PE/IPE spectra, is found to be 1.9 eV, much larger than previous estimations. The LDA calculations show that the on-site Coulomb interaction $\textit{U}$ can open the band gap without spin-orbit coupling (SOC). However, the SOC should also be incorporated to reproduce the proper gap size, indicating that the interplay between $\textit{U}$ and SOC plays an essential role in the physics of $α$-$\textrm{RuCl}_3$. There exist some spectral features in PE/IPE spectra which cannot be explained by the LDA calculations. To explain such discrepancies, we perform the configuration-interaction calculations for a ${\textrm{RuCl}}_6^{3-}$ cluster. The experimental data and calculations demonstrate that the 4$\textit{d}$ compound $α$-$\textrm{RuCl}_3$ is a $J_{\textrm{eff}}$ = 1/2 Mott insulator rather than a quasimolecular-orbital insulator. Our study also provides important physical parameters, required in verifying the proposed Kitaev physics in $α$-$\textrm{RuCl}_3$.
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Submitted 22 August, 2016;
originally announced August 2016.
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Direct penetration of spin-triplet superconductivity into a ferromagnet in Au/SrRuO3/Sr2RuO4 junctions
Authors:
M. S. Anwar,
S. R. Lee,
R. Ishiguro,
Y. Sugimoto,
Y. Tano,
S. J. Kang,
Y. J. Shin,
S. Yonezawa,
D. Manske,
H. Takayanagi,
T. W. Noh,
Y. Maeno
Abstract:
Efforts have been ongoing to establish superconducting spintronics utilizing ferromagnet/superconductor heterostructures1. Previously reported devices are based on spin-singlet superconductors (SSCs), where the spin degree of freedom is lost. Spin-polarized supercurrent induction in ferromagnetic metals (FMs) is achieved even with SSCs, but only with the aid of interfacial complex magnetic structu…
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Efforts have been ongoing to establish superconducting spintronics utilizing ferromagnet/superconductor heterostructures1. Previously reported devices are based on spin-singlet superconductors (SSCs), where the spin degree of freedom is lost. Spin-polarized supercurrent induction in ferromagnetic metals (FMs) is achieved even with SSCs, but only with the aid of interfacial complex magnetic structures, which severely affect information imprinted to the electron spin. Use of spin-triplet superconductors (TSCs) with active spins potentially overcomes this difficulty and further leads to novel functionalities. Here, we report spin-triplet superconductivity induction into a FM SrRuO3 from a leading TSC candidate Sr2RuO4, by fabricating microscopic devices using an epitaxial SrRuO3/Sr2RuO4 hybrid. The differential conductance, exhibiting Andreev-reflection features with multiple energy scales up to around half tesla, indicates the penetration of superconductivity over a considerable distance of 15 nm across the SrRuO3 layer without help of interfacial complex magnetism. This demonstrates the first FM/TSC device exhibiting the spin-triplet proximity effect.
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Submitted 7 November, 2016; v1 submitted 2 March, 2016;
originally announced March 2016.
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Ferromagnetic properties of SrRuO3 thin films deposited on the spin-triplet superconductor Sr2RuO4
Authors:
Yusuke Sugimoto,
Muhammad Shahbaz Anwar,
Seung Ran Lee,
Yeong Jae Shin,
Shingo Yonezawa,
Tae Won Noh,
Yoshiteru Maeno
Abstract:
We report magnetic properties of epitaxial thin films of the itinerant ferromagnet SrRuO3 deposited on the cleaved ab surface of the spin-triplet superconductor Sr2RuO4. The films exhibit ferromagnetic transition near 160 K as in the bulk SrRuO3, although the films are under 1.7% compressive strain. The observed magnetization is even higher than that of the bulk SrRuO3. In addition, we newly found…
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We report magnetic properties of epitaxial thin films of the itinerant ferromagnet SrRuO3 deposited on the cleaved ab surface of the spin-triplet superconductor Sr2RuO4. The films exhibit ferromagnetic transition near 160 K as in the bulk SrRuO3, although the films are under 1.7% compressive strain. The observed magnetization is even higher than that of the bulk SrRuO3. In addition, we newly found that the magnetization relaxation after field removal is strongly anisotropic: two relaxation processes are involved when magnetic domains are aligned along the ab-plane.
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Submitted 7 August, 2015;
originally announced August 2015.
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Dimensionality Control of d-orbital Occupation in Oxide Superlattices
Authors:
Da Woon Jeong,
Woo Seok Choi,
Satoshi Okamoto,
Jae-Young Kim,
Kyung Wan Kim,
Soon Jae Moon,
Deok-Yong Cho,
Ho Nyung Lee,
Tae Won Noh
Abstract:
Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and develo** novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t2g and eg multiplets in quasi-twodimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO3 and a band insulator…
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Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and develo** novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t2g and eg multiplets in quasi-twodimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO3 and a band insulator LaAlO3. As the LaCoO3 sublayer thickness approaches its fundamental limit (i.e. one unit-cell-thick), the electronic state of the SLs changed from a Mott insulator, in which both t2g and eg orbitals are partially filled, to a band insulator by completely filling (emptying) the t2g (eg) orbitals. We found the reduction of dimensionality has a profound effect on the electronic structure evolution, which is, whereas, insensitive to the epitaxial strain. The remarkable orbital controllability shown here offers a promising pathway for novel applications such as catalysis and photovoltaics, where the energy of d level is an essential parameter.
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Submitted 22 December, 2014;
originally announced December 2014.
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Latent Instabilities in Metallic LaNiO3 Films by Strain Control of Fermi-Surface Topology
Authors:
Hyang Keun Yoo,
Seung Ill Hyun,
Luca Moreschini,
Hyeong-Do Kim,
Young Jun Chang,
Chang Hee Sohn,
Da Woon Jeong,
Soobin Sinn,
Yong Su Kim,
Aaron Bostwick,
Eli Rotenberg,
Ji Hoon Shim,
Tae Won Noh
Abstract:
Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by m…
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Strain control is one of the most promising avenues to search for new emergent phenomena in transition-metal-oxide films. Here, we investigate the strain-induced changes of electronic structures in strongly correlated LaNiO3 (LNO) films, using angle-resolved photoemission spectroscopy and the dynamical mean-field theory. The strongly renormalized eg-orbital bands are systematically rearranged by misfit strain to change its fermiology. As tensile strain increases, the hole pocket centered at the A point elongates along the kz-axis and seems to become open, thus changing Fermi-surface (FS) topology from three- to quasi-two-dimensional. Concomitantly, the FS shape becomes flattened to enhance FS nesting. A FS superstructure with Q1 = (1/2,1/2,1/2) appears in all LNO films, while a tensile-strained LNO film has an additional Q2 = (1/4,1/4,1/4) modulation, indicating that some instabilities are present in metallic LNO films. Charge disproportionation and spin-density-wave fluctuations observed in other nickelates might be their most probable origins.
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Submitted 4 March, 2015; v1 submitted 10 June, 2014;
originally announced June 2014.
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Ferromagnetic SrRuO3 thin-film deposition on a spin-triplet superconductor Sr2RuO4 with highly conducting interface
Authors:
M. S. Anwar,
Yeong Jae Shin,
Seung Ran Lee,
Sung ** Kang,
Yuske Sugimoto,
Shingo Yonezawa,
Tae Won Noh,
Yoshiteru Maeno
Abstract:
Ferromagnetic SrRuO3 thin films are deposited on the ab-surface of single crystals of the spin-triplet superconductor Sr2RuO4 as substrates using pulsed laser deposition. The films are under a severe in-plane compressive strain. Nevertheless, the films exhibit ferromagnetic order with the easy axis along the c-direction below the Curie temperature of 158 K. The electrical transport reveals that th…
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Ferromagnetic SrRuO3 thin films are deposited on the ab-surface of single crystals of the spin-triplet superconductor Sr2RuO4 as substrates using pulsed laser deposition. The films are under a severe in-plane compressive strain. Nevertheless, the films exhibit ferromagnetic order with the easy axis along the c-direction below the Curie temperature of 158 K. The electrical transport reveals that the SrRuO3/Sr2RuO4 interface is highly conducting, in contrast with the interface between other normal-metals and the ab-surface of Sr2RuO4. Our results will stimulate the investigations on proximity effects between a ferromagnet and a spin-triplet superconductor.
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Submitted 5 January, 2015; v1 submitted 3 March, 2014;
originally announced March 2014.