Unidirectional perfect reflection and radiation in double-lattice photonic crystals
Authors:
Takuya Inoue,
Naoya Noguchi,
Masahiro Yoshida,
Heungjoon Kim,
Takashi Asano,
Susumu Noda
Abstract:
Non-Hermitian photonic systems are known to exhibit unique phenomena, where non-Hermiticity is typically introduced by material loss or gain. Here, we propose and experimentally demonstrate unidirectional phenomena solely based on radiation. Our design is on the basis of a double-lattice photonic crystal that has a linear dispersion with a single exceptional point, where the magnitudes of Hermitia…
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Non-Hermitian photonic systems are known to exhibit unique phenomena, where non-Hermiticity is typically introduced by material loss or gain. Here, we propose and experimentally demonstrate unidirectional phenomena solely based on radiation. Our design is on the basis of a double-lattice photonic crystal that has a linear dispersion with a single exceptional point, where the magnitudes of Hermitian and non-Hermitian couplings are cancelled out in one direction. Based on this concept, we realize a unidirectional waveguide which shows perfect radiation when light is incident from one side, and shows perfect reflection when light is incident from the other side. Our results will open up a new route toward harnessing non-Hermiticity.
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Submitted 24 January, 2023;
originally announced January 2023.
Pressure suppression of the excitonic insulator state in Ta2NiSe5 observed by optical conductivity
Authors:
H. Okamura,
T. Mizokawa,
K. Miki,
Y. Matsui,
N. Noguchi,
N. Katayama,
H. Sawa,
M. Nohara,
Y. Lu,
H. Takagi,
Y. Ikemoto,
T. Moriwaki
Abstract:
The layered chalcogenide Ta2NiSe5 has recently attracted much interest as a strong candidate for the long sought excitonic insulator (EI). Since the physical properties of an EI are expected to depend sensitively on the external pressure, it is important to clarify the pressure evolution of microscopic electronic state in Ta2NiSe5. Here we report the optical conductivity [s(w)] of Ta2NiSe5 measure…
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The layered chalcogenide Ta2NiSe5 has recently attracted much interest as a strong candidate for the long sought excitonic insulator (EI). Since the physical properties of an EI are expected to depend sensitively on the external pressure, it is important to clarify the pressure evolution of microscopic electronic state in Ta2NiSe5. Here we report the optical conductivity [s(w)] of Ta2NiSe5 measured at high pressures to 10 GPa and at low temperatures to 8 K. With cooling at ambient pressure, s(w) develops an energy gap of about 0.17 eV and a pronounced excitonic peak at 0.38 eV, as already reported in the literature. Upon increasing pressure, the energy gap becomes narrower and the excitonic peak is broadened. Above a structural transition at Ps~3 GPa, the energy gap becomes partially filled, indicating that Ta2NiSe5 is a semimetal after the EI state is suppressed by pressure. At higher pressures, s(w) exhibits metallic characteristics with no energy gap. The detailed pressure evolution of s(w) is presented, and discussed mainly in terms of a weakening of excitonic correlation with pressure.
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Submitted 25 August, 2022;
originally announced August 2022.
