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Metal Droplet Effects on the Composition of Ternary Nitrides
Authors:
Mani Azadmand,
Stefano Vichi,
Sergio Bietti,
Daniel Chrastina,
Emiliano Bonera,
Maurizio Acciarri,
Alexey Fedorov,
Shiro Tsukamoto,
Richard Nötzel,
Stefano Sanguinetti
Abstract:
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that consi…
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We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that considers droplet effects on the incorporation of In and Ga adatoms into the crystal by taking into account the combined effects of the higher mobility of In, with respect to Ga, and to the vapor-liquid-solid growth that takes place under the droplet by direct im**ement of nitrogen. The proposed model is general and can be extended to describe the incorporation of adatoms during the growth of the material class of ternary compounds when droplets are present on the surface.
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Submitted 16 July, 2019;
originally announced July 2019.
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Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials
Authors:
Mani Azadmand,
Luca Barabani,
Sergio Bietti,
Daniel Chrastina,
Emiliano Bonera,
Maurizio Acciarri,
Alexey Fedorov,
Shiro Tsukamoto,
Richard Nötzel,
Stefano Sanguinetti
Abstract:
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the m…
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We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the metal dose exceeds the critical amount required for the nucleation of droplets. We explain this phenomenon via a model that takes into account droplet effects on the incorporation of metal adatoms into the crystal. A relevant role is played by the vapor-liquid-solid growth mode that takes place under the droplets due to nitrogen molecules directly im**ing on the droplets.
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Submitted 1 December, 2017; v1 submitted 29 November, 2017;
originally announced November 2017.
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Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces
Authors:
Luca Esposito,
Sergio Bietti,
Alexey Fedorov,
Richard Noetzel,
Stefano Sanguinetti
Abstract:
We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier as leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientation…
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We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier as leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientations and we identify the growth conditions that drive the typical three-dimensional growth of Ga(Al)As(111)A towards atomically flat surface. GaAs/AlGaAs quantum wells realized on optimized surface (<0.2 nm roughness) show a record low emission linewidth of 4.5 meV.
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Submitted 6 April, 2017;
originally announced April 2017.
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Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling
Authors:
M. D. Birowosuto,
H. Sumikura,
S. Matsuo,
H. Taniyama,
P. J. van Veldhoven,
R. Nötzel,
M. Notomi
Abstract:
High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavi…
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High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.
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Submitted 28 March, 2012;
originally announced March 2012.
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Electromechanical wavelength tuning of double-membrane photonic crystal cavities
Authors:
L. Midolo,
P. J. van Veldhoven,
M. A. Dundar,
R. Nötzel,
A. Fiore
Abstract:
We present a method for tuning the resonant wavelength of photonic crystal cavities (PCCs) around 1.55 um. Large tuning of the PCC mode is enabled by electromechanically controlling the separation between two parallel InGaAsP membranes. A fabrication method to avoid sticking between the membranes is discussed. Reversible red/blue shifting of the symmetric/anti-symmetric modes has been observed, wh…
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We present a method for tuning the resonant wavelength of photonic crystal cavities (PCCs) around 1.55 um. Large tuning of the PCC mode is enabled by electromechanically controlling the separation between two parallel InGaAsP membranes. A fabrication method to avoid sticking between the membranes is discussed. Reversible red/blue shifting of the symmetric/anti-symmetric modes has been observed, which provides clear evidence of the electromechanical tuning, and a maximum shift of 10 nm with < 6 V applied bias has been obtained.
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Submitted 6 April, 2011;
originally announced April 2011.
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Size dependent exciton g-factor in self-assembled InAs/InP quantum dots
Authors:
N. A. J. M. Kleemans,
J. van Bree,
M. Bozkurt,
P. J. van Veldhoven,
P. A. Nouwens,
R. Nötzel,
A. Yu. Silov,
M. E. Flatté,
P. M. Koenraad
Abstract:
We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots h…
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We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots have systematically been investigated by analyzing single dot magneto-luminescence between 1200nm and 1600 nm. We demonstrate a strong dependence of the exciton g-factor on the height and diameter of the quantum dots, which eventually gives rise to a sign change of the g-factor. The observed correlation between exciton g-factor and the size of the dots is in good agreement with calculations. Moreover, we find a size dependent anisotropy splitting of the exciton emission in zero magnetic field.
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Submitted 9 December, 2008;
originally announced December 2008.
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Observation of a Long-Range Interaction between Semiconductor Quantum Dots
Authors:
E. W. Bogaart,
J. E. M. Haverkort,
R. Noetzel
Abstract:
We demonstrate electromagnetic interaction between distant quantum dots (QDs), as is observed from transient pump-probe differential reflectivity measurements. The QD-exciton lifetime is measured as a function of the probe photon energy and shows a strong resonant behavior with respect to the QD density of states. The observed exciton lifetime spectrum reveals a subradiance-like coupling between…
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We demonstrate electromagnetic interaction between distant quantum dots (QDs), as is observed from transient pump-probe differential reflectivity measurements. The QD-exciton lifetime is measured as a function of the probe photon energy and shows a strong resonant behavior with respect to the QD density of states. The observed exciton lifetime spectrum reveals a subradiance-like coupling between the QD, with a 12 times enhancement of the lifetime at the center of the ground state transition. This effect is due to a mutual electromagnetic coupling between resonant QDs, which extends over distances considerably beyond the nearest neighbor QD-QD separation.
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Submitted 7 October, 2006;
originally announced October 2006.
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InP-based two-dimensional photonic crystals filled with polymers
Authors:
R. van der Heijden,
C. F. Carlstrom,
J. A. P. Snijders,
R. W. van der Heijden,
F. Karouta,
R. Notzel,
H. W. M. Salemink,
B. K. C. Kjellander,
C. W. M. Bastiaansen,
D. J. Broer,
E. van der Drift
Abstract:
Polymer filling of the air holes of Indium Phosphide based two-dimensional photonic crystals is reported. After infiltration of the holes with a liquid monomer and solidification of the infill in situ by thermal polymerization, complete filling is proven using scanning electron microscopy. Optical transmission measurements of a filled photonic crystal structure exhibit a redshift of the air band…
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Polymer filling of the air holes of Indium Phosphide based two-dimensional photonic crystals is reported. After infiltration of the holes with a liquid monomer and solidification of the infill in situ by thermal polymerization, complete filling is proven using scanning electron microscopy. Optical transmission measurements of a filled photonic crystal structure exhibit a redshift of the air band, confirming the complete filling.
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Submitted 16 March, 2006;
originally announced March 2006.
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Optical characteristics of single wavelength-tunable InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 um
Authors:
N. I. Cade,
H. Gotoh,
H. Kamada,
H. Nakano,
S. Anantathanasarn,
R. Noetzel
Abstract:
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with characteristic exciton-biexciton behavior, and a biexciton antibinding energy of more than 2 meV. Temperature-dependent measurements reveal…
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We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with characteristic exciton-biexciton behavior, and a biexciton antibinding energy of more than 2 meV. Temperature-dependent measurements reveal negligible optical-phonon induced broadening of the exciton line up to 50 K, and emission from the exciton state clearly persists above 70 K. Furthermore, we find no measurable polarized fine structure splitting of the exciton state within the experimental precision. These results are encouraging for the development of a controllable photon source for fiber-based quantum information and cryptography systems.
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Submitted 31 March, 2006;
originally announced March 2006.
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All-optical switching due to state-filling in quantum dots
Authors:
R. Prasanth,
J. E. M. Haverkort,
A. Deepthy,
E. W. Bogaart,
J. J. G. M. van der Tol,
E. A. Patent,
G. Zhao,
Q. Gong,
P. J. van Veldhoven,
R. Noetzel,
J. H. Wolter
Abstract:
We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from the top. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity…
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We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from the top. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is only due to the QDs. The switching efficiency is 2 rad/(microW absorbed power). Probe wavelength insensitivity was obtained using a broad distribution of QDs.
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Submitted 18 October, 2004;
originally announced October 2004.
