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Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time
Authors:
K. R. Gann,
N. Pieczulewski1,
C. A. Gorsak,
K. Heinselman,
T. J. Asel,
B. A. Noesges,
K. T. Smith,
D. M. Dryden,
H. G. Xing,
H. P. Nair,
D. A. Muller,
M. O. Thompson
Abstract:
Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area do**. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) wi…
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Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area do**. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) with contact resistances below 0.29 $Ω$-mm. Homoepitaxial $β$-Ga$_2$O$_3$ films, grown by plasma assisted MBE on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5x10$^{18}$, 5x10$^{19}$, and 1x10$^{20}$ cm$^{-3}$. Anneals were performed in a UHV-compatible quartz furnace at 1 bar with well-controlled gas composition. To maintain $β$-Ga$_2$O$_3$ stability, $p_{O2}$ must be greater than 10$^{-9}$ bar. Anneals up to $p_{O2}$ = 1 bar achieve full activation at 5x10$^{18}$ cm$^{-3}$, while 5x10$^{19}$ cm$^{-3}$ must be annealed with $p_{O2}$ <10$^{-4}$ bar and 1x10$^{20}$ cm$^{-3}$ requires $p_{O2}$ <10$^{-6}$ bar. Water vapor prevents activation and must be maintained below 10$^{-8}$ bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperature up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 minutes with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5x10$^{19}$ cm$^{-3}$ and occurs rapidly at 1x10$^{20}$ cm$^{-3}$. RBS (channeling) suggests damage recovery is seeded from remnant aligned $β$-Ga$_2$O$_3$ that remains after implantation; this conclusion is also supported by STEM showing retention of the $β$-phase with inclusions that resemble the $γ$-phase.
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Submitted 1 November, 2023;
originally announced November 2023.
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Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$
Authors:
Md Rezaul Karim,
Brenton A. Noesges,
Benthara Hewage Dinushi Jayatunga,
Menglin Zhu,
**woo Hwang,
Walter R. L. Lambrecht,
Leonard J. Brillson,
Kathleen Kash,
Hong** Zhao
Abstract:
A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown…
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A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown $(ZnGe)_{1-x}Ga_{2x}N_2$, for $x = 0$ and $0.06$, and $GaN$ using X-ray photoemission spectroscopy. The valence band of $ZnGeN_2$ was found to lie $1.45-1.65 eV$ above that of $GaN$. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For $(ZnGe)_{0.94}Ga_{0.12}N_2$ the value was determined to be $1.29 eV$, $~10-20\%$ lower than that of $ZnGeN_2$. The experimental determination of the large band offset between $ZnGeN_2$ and $GaN$ provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.
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Submitted 3 February, 2021;
originally announced February 2021.
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Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators
Authors:
Brenton A. Noesges,
Tiancong Zhu,
Jacob J. Repicky,
Sisheng Yu,
Fenguan Yang,
Jay A. Gupta,
Roland K. Kawakami,
Leonard J. Brillson
Abstract:
Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic chang…
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Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic changes at the interface. Depositing Mn metal on Bi$_2$Se$_3$ without an external source of Se shows unexpected bonding within the Mn layer due to Mn-Se bonding as Se diffuses out of the Bi$_2$Se$_3$ layer into the growing Mn film. The Se out-diffusion is further evidenced by changes in Bi core levels within the Bi$_2$Se$_3$ layers indicating primarily Bi-Bi bonding over Bi-Se bonding. No out-diffusion of Se occurred when excess Se is supplied with Mn, indicating the importance of supplying enough chalcogen atoms with deposited metals. However, Bi$_2$Se$_3$ core level photoelectrons exhibited a rigid chemical shift toward higher binding energy after depositing a monolayer of MnSe$_{2-x}$, indicating a dipole within the overlayer. Stoichiometry calculations indicated that the monolayer forms MnSe preferentially over the transition metal dichalcogenide (TMD) phase MnSe$_2$, providing a consistent picture of the dipole formation in which a plane of Se anions sits above Mn cations. This study shows that chemical diffusion and dipole formation are important for Mn-Bi$_2$Se$_3$ and MnSe$_{2-x}$-Bi$_2$Se$_3$ and should be considered carefully for TMD/TI interfaces more generally.
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Submitted 12 April, 2020;
originally announced April 2020.
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Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy
Authors:
Tiancong Zhu,
Dante J. O'Hara,
Brenton A. Noesges,
Menglin Zhu,
Jacob J. Repicky,
Mark R. Brenner,
Leonard J. Brillson,
**woo Hwang,
Jay A. Gupta,
Roland K. Kawakami
Abstract:
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectrosc…
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We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective cap** layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
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Submitted 11 April, 2020;
originally announced April 2020.
