A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Authors:
Wonill Ha,
Sieu D. Ha,
Maxwell D. Choi,
Yan Tang,
Adele E. Schmitz,
Mark P. Levendorf,
Kangmu Lee,
James M. Chappell,
Tower S. Adams,
Daniel R. Hulbert,
Edwin Acuna,
Ramsey S. Noah,
Justine W. Matten,
Michael P. Jura,
Jeffrey A. Wright,
Matthew T. Rakher,
Matthew G. Borselli
Abstract:
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar…
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Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlap** gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
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Submitted 22 July, 2021;
originally announced July 2021.
Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits
Authors:
J. Kerckhoff,
B. Sun,
B. H. Fong,
C. Jones,
A. A. Kiselev,
D. W. Barnes,
R. S. Noah,
E. Acuna,
M. Akmal,
S. D. Ha,
J. A. Wright,
B. J. Thomas,
C. A. C. Jackson,
L. F. Edge,
K. Eng,
R. S. Ross,
T. D. Ladd
Abstract:
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width…
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We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.
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Submitted 17 September, 2020;
originally announced September 2020.
