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Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures
Authors:
Takeshi Odagawa,
Sota Yamamoto,
Chaoliang Zhang,
Kazuki Koyama,
Jun Ishihara,
Giacomo Mariani,
Yoji Kunihashi,
Haruki Sanada,
Junsaku Nitta,
Makoto Kohda
Abstract:
We investigate the excitonic species in WS$_{2}$ monolayers transferred onto III-V semiconductor substrates with different surface treatments. When the III-V substrates were covered with amorphous native oxides, negatively charged excitons dominate the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III-V substrates were…
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We investigate the excitonic species in WS$_{2}$ monolayers transferred onto III-V semiconductor substrates with different surface treatments. When the III-V substrates were covered with amorphous native oxides, negatively charged excitons dominate the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III-V substrates were reduced, neutral excitons begin to dominate the spectral weight, indicating a reduction in the electron density in the WS$_{2}$ monolayers. The removal of the native oxides enhanced the electron transfer from the WS$_{2}$ monolayer to the III-V substrate. In addition, an additional shoulder-like PL feature appeared $\sim$50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III-V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through the substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, to implement deterministic carrier localization or delocalization for the 2D materials, and to facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.
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Submitted 19 April, 2024;
originally announced April 2024.
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Magnetic switching of spin-scattering centers in Dresselhaus [110] circuits
Authors:
E. J. Rodríguez,
A. A. Reynoso,
J. P. Baltanás,
J. Nitta,
D. Frustaglia
Abstract:
Spin carriers subject to Dresselhaus [110] (D110) spin-orbit coupling (SOC) gather null spin phases in closed circuits, contrary to usual Rashba and Dresselhaus [001] SOC. We show that D110 spin phases can be activated in square circuits by introducing an in-plane Zeeman field, where localized field inhomogeneities act as effective spin-scattering centers. Our simulations show rich interference pa…
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Spin carriers subject to Dresselhaus [110] (D110) spin-orbit coupling (SOC) gather null spin phases in closed circuits, contrary to usual Rashba and Dresselhaus [001] SOC. We show that D110 spin phases can be activated in square circuits by introducing an in-plane Zeeman field, where localized field inhomogeneities act as effective spin-scattering centers. Our simulations show rich interference patterns in the quantum conductance, which work as maps for a geometric classification of the propagating spin states. We also find that disorder facilitates low-field implementations.
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Submitted 4 July, 2023; v1 submitted 22 February, 2023;
originally announced February 2023.
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Observation of spin-splitter torque in collinear antiferromagnetic RuO$_2$
Authors:
Shutaro Karube,
Takahiro Tanaka,
Daichi Sugawara,
Naohiro Kadoguchi,
Makoto Kohda,
Junsaku Nitta
Abstract:
The spin-splitter effect is theoretically predicted to generate an unconventional spin current with $\mathit{x}$- and $\mathit{z}$- spin polarization via the spin-split band in antiferromagnets. The generated torque, namely spin-splitter torque, is effective for the manipulation of magnetization in an adjacent magnetic layer without an external magnetic field for spintronic devices such as MRAM. H…
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The spin-splitter effect is theoretically predicted to generate an unconventional spin current with $\mathit{x}$- and $\mathit{z}$- spin polarization via the spin-split band in antiferromagnets. The generated torque, namely spin-splitter torque, is effective for the manipulation of magnetization in an adjacent magnetic layer without an external magnetic field for spintronic devices such as MRAM. Here, we study the generation of torque in collinear antiferromagnetic RuO$_2$ with (100), (101), and (001) crystal planes. Next we find all $\mathit{x}$-, $\mathit{y}$-, and $\mathit{z}$-polarized spin currents depending on the Néel vector direction in RuO$_2$(101). For RuO$_2$(100) and (001), only $\mathit{y}$-polarized spin current was present, which is independent of the Néel vector. Using the $\mathit{z}$-polarized spin currents, we demonstrate field-free switching of the perpendicular magnetized ferromagnet at room temperature. The spin-splitter torque generated from RuO$_2$ is verified to be useful for the switching phenomenon and paves the way for a further understanding of the detailed mechanism of the spin-splitter effect and for develo** antiferromagnetic spin-orbitronics.
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Submitted 14 November, 2021;
originally announced November 2021.
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Control of Spin Relaxation Anisotropy by Spin-Orbit-Coupled Diffusive Spin Motion
Authors:
Daisuke Iizasa,
Asuka Aoki,
Takahito Saito,
Junsaku Nitta,
Gian Salis,
Makoto Kohda
Abstract:
Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position, resulting in spin precession because of the diffusion-induced spin-orbit field. Near the cancellation between spin-orbit field and external magnetic field, the ind…
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Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position, resulting in spin precession because of the diffusion-induced spin-orbit field. Near the cancellation between spin-orbit field and external magnetic field, the induced spin precession frequency depends nonlinearly on the diffusion velocity, which is unexpected from the conventional linear relation between the spin-orbit field and the electron velocity.This behavior originates from an enhancement of the spin relaxation anisotropy by the electron velocity perpendicular to the diffused direction. We demonstrate that the spin relaxation anisotropy, which has been regarded as a material constant, can be controlled via diffusive electron motion.
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Submitted 15 June, 2020;
originally announced June 2020.
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Enhanced longevity of the spin helix in low-symmetry quantum wells
Authors:
Daisuke Iizasa,
Makoto Kohda,
Ulrich Zülicke,
Junsaku Nitta,
Michael Kammermeier
Abstract:
In a semiconductor, collective excitations of spin textures usually decay rather fast due to D'yakonov-Perel' spin relaxation. The latter arises from spin-orbit coupling, which induces wave-vector-dependent spin rotations that, in conjunction with random disorder scattering, generate spin decoherence. However, symmetries occurring under certain conditions can prevent the relaxation of particular h…
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In a semiconductor, collective excitations of spin textures usually decay rather fast due to D'yakonov-Perel' spin relaxation. The latter arises from spin-orbit coupling, which induces wave-vector-dependent spin rotations that, in conjunction with random disorder scattering, generate spin decoherence. However, symmetries occurring under certain conditions can prevent the relaxation of particular homogeneous and inhomogeneous spin textures. The inhomogeneous spin texture, termed as persistent spin helix, is especially appealing as it enables us to manipulate the spin orientation while retaining a long spin lifetime. Recently, it was predicted that such symmetries can be realized in zinc-blende two-dimensional electron gases if at least two growth-direction Miller indices agree in modulus and the coefficients of the Rashba and linear Dresselhaus spin-orbit couplings are suitably matched [PRL 117, 236801 (2016)]. In the present paper, we systematically analyze the impact of the symmetry-breaking cubic Dresselhaus spin-orbit coupling, which generically coexists in these systems, on the stability of the emerging spin helices with respect to the growth direction. We find that, as an interplay between orientation and strength of the effective magnetic field induced by the cubic Dresselhaus terms, the spin relaxation is weakest for a low-symmetry growth direction that can be well approximated by a [225] lattice vector. These quantum wells yield a 30\% spin-helix lifetime enhancement compared to [001]-oriented electron gases and, remarkably, require a negligible Rashba coefficient. The rotation axis of the corresponding spin helix is only slightly tilted out of the quantum-well plane. This makes the experimental study of the spin-helix dynamics readily accessible for conventional optical spin orientation measurements where spins are excited and detected along the quantum-well growth direction.
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Submitted 13 June, 2020; v1 submitted 13 March, 2020;
originally announced March 2020.
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Geometry-assisted topological transitions in spin interferometry
Authors:
M. Wang,
H. Saarikoski,
A. A. Reynoso,
J. P. Baltanás,
D. Frustaglia,
J. Nitta
Abstract:
We identify a series of topological transitions occurring in electronic spin transport when manipulating spin-guiding fields controlled by the geometric shape of mesoscopic interferometers. They manifest as distinct inversions of the interference pattern in quantum conductance experiments. We establish that Rashba square loops develop weak-(anti)localization transitions (absent in other geometries…
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We identify a series of topological transitions occurring in electronic spin transport when manipulating spin-guiding fields controlled by the geometric shape of mesoscopic interferometers. They manifest as distinct inversions of the interference pattern in quantum conductance experiments. We establish that Rashba square loops develop weak-(anti)localization transitions (absent in other geometries as Rashba ring loops) as an in-plane Zeeman field is applied. These transitions, boosted by non-adiabatic spin scattering, prove to have a topological interpretation in terms of winding numbers characterizing the structure of spin modes in the Bloch sphere.
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Submitted 10 November, 2019; v1 submitted 5 August, 2019;
originally announced August 2019.
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Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface
Authors:
Shutaro Karube,
Nobuki Tezuka,
Makoto Kohda,
Junsaku Nitta
Abstract:
We have studied spin-orbit (SO) field in Ni$_{80}$Fe$_{20}$(Py)/W/Pt trilayer by means of spin-torque ferromagnetic resonance, and demonstrated that the W/Pt interface generates an extra SO field acting on the Py layer. This unprecedented field originates from the following three processes, 1) spin accumulation at W/Pt interface via the Rashba-Edelstein effect, 2) diffusive spin transport in the W…
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We have studied spin-orbit (SO) field in Ni$_{80}$Fe$_{20}$(Py)/W/Pt trilayer by means of spin-torque ferromagnetic resonance, and demonstrated that the W/Pt interface generates an extra SO field acting on the Py layer. This unprecedented field originates from the following three processes, 1) spin accumulation at W/Pt interface via the Rashba-Edelstein effect, 2) diffusive spin transport in the W layer, and 3) spin absorption into the Py layer through accumulation at the Py/W interface. Our result means that we can create extra SO field away from the ferromagnet/ metal interface and control its strength by a combination of two different metals.
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Submitted 30 October, 2019; v1 submitted 17 June, 2019;
originally announced June 2019.
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Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect
Authors:
Ye Du,
Saburo Takahashi,
Junsaku Nitta
Abstract:
We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The magnetoresistance analysis yields, for the Pt/Co interface, a temperature-independent Rashba parameter in the order of 1e-11 eV m that agrees with theoretical calcul…
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We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The magnetoresistance analysis yields, for the Pt/Co interface, a temperature-independent Rashba parameter in the order of 1e-11 eV m that agrees with theoretical calculations, along with an effective interfacial REE thickness of several angstroms which is in overall consistency with our previous spin-orbit torque analysis. In particular, our results suggest that both bulk and interface charge-spin current inter-conversions need to be taken into account for the spin-current-related magnetoresistance analysis in highly-conductive magnetic hetero-structures such as the epitaxial Pt/Co bilayers.
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Submitted 16 March, 2021; v1 submitted 27 July, 2018;
originally announced July 2018.
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Gate-controlled anisotropy in Aharonov-Casher spin interference: signatures of Dresselhaus spin-orbit inversion and spin phases
Authors:
Fumiya Nagasawa,
Andres A. Reynoso,
José Pablo Baltanás,
Diego Frustaglia,
Henri Saarikoski,
Junsaku Nitta
Abstract:
The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we fin…
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The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, assisted by two-dimensional numerical simulations, we identify a remarkable anisotropy inversion in our experiments attributed to a sign change in the renormalized linear Dresselhaus SOI controlled by electrical means, which would open a door to new possibilities for spin manipulation.
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Submitted 13 November, 2018; v1 submitted 30 March, 2018;
originally announced March 2018.
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Spin interferometry in anisotropic spin-orbit fields
Authors:
Henri Saarikoski,
Andrés Reynoso,
José Pablo Baltanás,
Diego Frustaglia,
Junsaku Nitta
Abstract:
Electron spins in a two-dimensional electron gas (2DEG) can be manipulated by spin-orbit (SO) fields originating from either Rashba or Dresselhaus interactions with independent isotropic characteristics. Together, though, they produce anisotropic SO fields with consequences on quantum transport through spin interference. Here we study the transport properties of modelled mesoscopic rings subject t…
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Electron spins in a two-dimensional electron gas (2DEG) can be manipulated by spin-orbit (SO) fields originating from either Rashba or Dresselhaus interactions with independent isotropic characteristics. Together, though, they produce anisotropic SO fields with consequences on quantum transport through spin interference. Here we study the transport properties of modelled mesoscopic rings subject to Rashba and Dresselhaus [001] SO couplings in the presence of an additional in-plane Zeeman field acting as a probe. By means of 1D and 2D quantum transport simulations we show that this setting presents anisotropies in the quantum resistance as a function of the Zeeman field direction. Moreover, the anisotropic resistance can be tuned by the Rashba strength up to the point to invert its response to the Zeeman field. We also find that a topological transition in the field texture that is associated with a geometric phase switching is imprinted in the anisotropy pattern. We conclude that resistance anisotropy measurements can reveal signatures of SO textures and geometric phases in spin carriers.
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Submitted 6 February, 2018; v1 submitted 21 October, 2017;
originally announced October 2017.
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Spin resonance under topological driving fields
Authors:
A. A. Reynoso,
J. P. Baltanás,
H. Saarikoski,
J. E. Vázquez-Lozano,
J. Nitta,
D. Frustaglia
Abstract:
We study the dynamics of a localized spin-1/2 driven by a time-periodic magnetic field that undergoes a topological transition. Despite the strongly non-adiabatic effects dominating the spin dynamics, we find that the field's topology appears clearly imprinted in the Floquet spin states through an effective Berry phase emerging in the quasienergy. This has remarkable consequences on the spin reson…
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We study the dynamics of a localized spin-1/2 driven by a time-periodic magnetic field that undergoes a topological transition. Despite the strongly non-adiabatic effects dominating the spin dynamics, we find that the field's topology appears clearly imprinted in the Floquet spin states through an effective Berry phase emerging in the quasienergy. This has remarkable consequences on the spin resonance condition suggesting a whole new class of experiments to spot topological transitions in the dynamics of spins and other two-level systems, from nuclear magnetic resonance to strongly-driven superconducting qubits.
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Submitted 7 June, 2017; v1 submitted 6 February, 2017;
originally announced February 2017.
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Effective geometric phases and topological transitions in SO(3) and SU(2) rotations
Authors:
Henri Saarikoski,
José Pablo Baltanás,
J. Enrique Vázquez-Lozano,
Junsaku Nitta,
Diego Frustaglia
Abstract:
We address the development of geometric phases in classical and quantum magnetic moments (spin-1/2) precessing in an external magnetic field. We show that nonadiabatic dynamics lead to a topological phase transition determined by a change in the driving field topology. The transition is associated with an effective geometric phase which is identified from the paths of the magnetic moments in a sph…
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We address the development of geometric phases in classical and quantum magnetic moments (spin-1/2) precessing in an external magnetic field. We show that nonadiabatic dynamics lead to a topological phase transition determined by a change in the driving field topology. The transition is associated with an effective geometric phase which is identified from the paths of the magnetic moments in a spherical geometry. The topological transition presents close similarities between SO(3) and SU(2) cases but features differences in, e.g., the adiabatic limits of the geometric phases, being $2π$ and $π$ in the classical and the quantum case, respectively. We discuss possible experiments where the effective geometric phase would be observable.
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Submitted 8 February, 2016; v1 submitted 26 November, 2015;
originally announced November 2015.
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New Perspectives for Rashba Spin-Orbit Coupling
Authors:
A. Manchon,
H. C. Koo,
J. Nitta,
S. M. Frolov,
R. A. Duine
Abstract:
In 1984, Bychkov and Rashba introduced a simple form of spin-orbit coupling to explain certain peculiarities in the electron spin resonance of two-dimensional semiconductors. Over the past thirty years, similar ideas have been leading to a vast number of predictions, discoveries, and innovative concepts far beyond semiconductors. The past decade has been particularly creative with the realizations…
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In 1984, Bychkov and Rashba introduced a simple form of spin-orbit coupling to explain certain peculiarities in the electron spin resonance of two-dimensional semiconductors. Over the past thirty years, similar ideas have been leading to a vast number of predictions, discoveries, and innovative concepts far beyond semiconductors. The past decade has been particularly creative with the realizations of means to manipulate spin orientation by moving electrons in space, controlling electron trajectories using spin as a steering wheel, and with the discovery of new topological classes of materials. These developments reinvigorated the interest of physicists and materials scientists in the development of inversion asymmetric structures ranging from layered graphene-like materials to cold atoms. This review presents the most remarkable recent and ongoing realizations of Rashba physics in condensed matter and beyond.
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Submitted 12 July, 2015; v1 submitted 9 July, 2015;
originally announced July 2015.
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Topological transitions in spin interferometers
Authors:
Henri Saarikoski,
J. Enrique Vázquez-Lozano,
José Pablo Baltanás,
Fumiya Nagasawa,
Junsaku Nitta,
Diego Frustaglia
Abstract:
We show that topological transitions in electronic spin transport are feasible by a controlled manipulation of spin-guiding fields. The transitions are determined by the topology of the fields texture through an effective Berry phase (related to the winding parity of spin modes around poles in the Bloch sphere), irrespective of the actual complexity of the nonadiabatic spin dynamics. This manifest…
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We show that topological transitions in electronic spin transport are feasible by a controlled manipulation of spin-guiding fields. The transitions are determined by the topology of the fields texture through an effective Berry phase (related to the winding parity of spin modes around poles in the Bloch sphere), irrespective of the actual complexity of the nonadiabatic spin dynamics. This manifests as a distinct dislocation of the interference pattern in the quantum conductance of mesoscopic loops. The phenomenon is robust against disorder, and can be experimentally exploited to determine the magnitude of inner spin-orbit fields.
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Submitted 1 May, 2015; v1 submitted 17 December, 2014;
originally announced December 2014.
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Direct determination of spin orbit interaction coefficients and realization of the persistent spin helix symmetry
Authors:
A. Sasaki,
S. Nonaka,
Y. Kunihashi,
M. Kohda,
T. Bauernfeind,
T. Dollinger,
K. Richter,
J. Nitta
Abstract:
The spin orbit interaction plays a crucial role in diverse fields of condensed matter, including the investigation of Majorana fermions, topological insulators, quantum information and spintronics. In III V zinc blende semiconductor heterostructures, two types of spin orbit interaction, Rashba and Dresselhaus act on the electron spin as effective magnetic fields with different directions. They are…
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The spin orbit interaction plays a crucial role in diverse fields of condensed matter, including the investigation of Majorana fermions, topological insulators, quantum information and spintronics. In III V zinc blende semiconductor heterostructures, two types of spin orbit interaction, Rashba and Dresselhaus act on the electron spin as effective magnetic fields with different directions. They are characterized by coefficients alpha and beta, respectively. When alpha is equal to beta, the so called persistent spin helix symmetry is realized. In this condition, invariance with respect to spin rotations is achieved even in the presence of the spin orbit interaction, implying strongly enhanced spin lifetimes for spatially periodic spin modes. Existing methods to evaluate alpha/beta require fitting analyses that often include ambiguity in the parameters used. Here, we experimentally demonstrate a simple and fitting parameter free technique to determine alpha/beta and to deduce the absolute values of alpha and beta. The method is based on the detection of the effective magnetic field direction and the strength induced by the two spin orbit interactions. Moreover, we observe the persistent spin helix symmetry by gate tuning.
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Submitted 22 August, 2014;
originally announced August 2014.
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Shot Noise Induced by Nonequilibrium Spin Accumulation
Authors:
Tomonori Arakawa,
Junichi Shiogai,
Mariusz Ciorga,
Martin Utz,
Dieter Schuh,
Makoto Kohda,
Junsaku Nitta,
Dominique Bougeard,
Dieter Weiss,
Teruo Ono,
Kensuke Kobayashi
Abstract:
When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this…
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When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.
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Submitted 24 January, 2015; v1 submitted 2 July, 2014;
originally announced July 2014.
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Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes
Authors:
Junichi Shiogai,
Mariusz Ciorga,
Martin Utz,
Dieter Schuh,
Makoto Kohda,
Dominique Bougeard,
Tsutomu Nojima,
Junsaku Nitta,
Dieter Weiss
Abstract:
We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, wher…
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We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band.
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Submitted 20 December, 2013; v1 submitted 23 October, 2013;
originally announced October 2013.
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Shot noise suppression in InGaAs/InGaAsP quantum channels
Authors:
Yoshitaka Nishihara,
Shuji Nakamura,
Kensuke Kobayashi,
Teruo Ono,
Makoto Kohda,
Junsaku Nitta
Abstract:
We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e^2/h) (N=4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the o…
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We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e^2/h) (N=4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.
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Submitted 30 May, 2012; v1 submitted 29 May, 2012;
originally announced May 2012.
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Gate-controlled Persistent Spin Helix State in Materials with Strong Spin-Orbit Interaction
Authors:
M. Kohda,
V. Lechner,
Y. Kunihashi,
T. Dollinger,
P. Olbrich,
C. Schönhuber,
I. Caspers,
V. V. Bel'kov,
L. E. Golub,
D. Weiss,
K. Richter,
J. Nitta,
S. D. Ganichev
Abstract:
In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs…
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In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.
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Submitted 25 May, 2012;
originally announced May 2012.
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Anisotropic universal conductance fluctuations in disordered quantum wires with Rashba and Dresselhaus spin-orbit interaction and applied in-plane magnetic field
Authors:
Matthias Scheid,
Inanc Adagideli,
Junsaku Nitta,
Klaus Richter
Abstract:
We investigate the transport properties of narrow quantum wires realized in disordered two-dimensional electron gases in the presence of k-linear Rashba and Dresselhaus spin-orbit interaction (SOI), and an applied in-plane magnetic field. Building on previous work [Scheid, et al., PRL 101, 266401 (2008)], we find that in addition to the conductance, the universal conductance fluctuations also fe…
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We investigate the transport properties of narrow quantum wires realized in disordered two-dimensional electron gases in the presence of k-linear Rashba and Dresselhaus spin-orbit interaction (SOI), and an applied in-plane magnetic field. Building on previous work [Scheid, et al., PRL 101, 266401 (2008)], we find that in addition to the conductance, the universal conductance fluctuations also feature anisotropy with respect to the magnetic field direction. This anisotropy can be explained solely from the symmetries exhibited by the Hamiltonian as well as the relative strengths of the Rashba and Dresselhaus spin orbit interaction and thus can be utilized to detect this ratio from purely electrical measurements.
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Submitted 21 March, 2009;
originally announced March 2009.
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All-electrical detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction in quantum wires
Authors:
Matthias Scheid,
Makoto Kohda,
Yoji Kunihashi,
Klaus Richter,
Junsaku Nitta
Abstract:
We propose a method to determine the relative strength of Rashba and Dresselhaus spin-orbit interaction from transport measurements without the need of fitting parameters. To this end, we make use of the conductance anisotropy in narrow quantum wires with respect to the directions of an in-plane magnetic field, the quantum wire and the crystal orientation. We support our proposal by numerical ca…
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We propose a method to determine the relative strength of Rashba and Dresselhaus spin-orbit interaction from transport measurements without the need of fitting parameters. To this end, we make use of the conductance anisotropy in narrow quantum wires with respect to the directions of an in-plane magnetic field, the quantum wire and the crystal orientation. We support our proposal by numerical calculations of the conductance of quantum wires based on the Landauer formalism which show the applicability of the method to a wide range of parameters.
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Submitted 21 January, 2009;
originally announced January 2009.
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Experimental demonstration of the time reversal Aharonov-Casher effect
Authors:
Tobias Bergsten,
Toshiyuki Kobayashi,
Yoshiaki Sekine,
Junsaku Nitta
Abstract:
We demonstrate the time reversal Aharonov-Casher (AC) effect in small arrays of mesoscopic semiconductor rings. By using an electrostatic gate we can control the spin precession rate and follow the AC phase over several interference periods. We show that we control the precession rate in two different gate voltage ranges; in the lower range the gate voltage dependence is strong and linear and in…
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We demonstrate the time reversal Aharonov-Casher (AC) effect in small arrays of mesoscopic semiconductor rings. By using an electrostatic gate we can control the spin precession rate and follow the AC phase over several interference periods. We show that we control the precession rate in two different gate voltage ranges; in the lower range the gate voltage dependence is strong and linear and in the higher range the dependence in almost an order of magnitude weaker. We also see the second harmonic of the AC interference, oscillating with half the period. We finally map the AC phase to the spin-orbit interaction parameter alpha and find it is consistent with Shubnikov-de Haas analysis.
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Submitted 13 December, 2005;
originally announced December 2005.
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Experimental realization of a ballistic spin interferometer based on the Rashba effect using a nanolithographically defined square loop array
Authors:
Takaaki Koga,
Yoshiaki Sekine,
Junsaku Nitta
Abstract:
The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this experiment, we demonstrate electron spin precession in quasi-one-dimensional channels that is caused by the Rashba effect. It turned out that the spin precession angle…
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The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this experiment, we demonstrate electron spin precession in quasi-one-dimensional channels that is caused by the Rashba effect. It turned out that the spin precession angle $θ$ was gate-controllable by more than 0.75$π$ for a sample with $L=1.5μ$m, where $L$ is the side length of the SL. Large controllability of $θ$ by the applied gate voltage as such is a necessary requirement for the realization of the spin FET device proposed by Datta and Das [Datta {\it et. al.}, Appl. Phys. Lett. {\bf 56}, 665 (1990)] as well as for the manipulation of spin qubits using the Rashba effect.
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Submitted 28 April, 2005;
originally announced April 2005.
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Universal spin-induced Time Reversal Symmetry breaking in two-dimensional electron gases with Rashba spin-orbit interaction
Authors:
F. E. Meijer,
A. F. Morpurgo,
T. M. Klapwijk,
J. Nitta
Abstract:
We have experimentally studied the spin-induced time reversal symmetry (TRS) breaking as a function of the relative strength of the Zeeman energy (E_Z) and the Rashba spin-orbit interaction energy (E_SOI), in InGaAs-based 2D electron gases. We find that the TRS breaking saturates when E_Z becomes comparable to E_SOI. Moreover, we show that the spin-induced TRS breaking mechanism is a universal f…
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We have experimentally studied the spin-induced time reversal symmetry (TRS) breaking as a function of the relative strength of the Zeeman energy (E_Z) and the Rashba spin-orbit interaction energy (E_SOI), in InGaAs-based 2D electron gases. We find that the TRS breaking saturates when E_Z becomes comparable to E_SOI. Moreover, we show that the spin-induced TRS breaking mechanism is a universal function of the ratio E_Z/E_SOI, within the experimental accuracy.
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Submitted 12 April, 2005; v1 submitted 28 December, 2004;
originally announced December 2004.
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Shot-noise characteristics of triple-barrier resonant-tunneling diodes
Authors:
A. K. M. Newaz,
W. Song,
Y. Lin,
J. Nitta,
E. E. Mendez
Abstract:
We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI when the differential conductance is negative. This behavior, although qualitatively similar to that found in double-barrier diodes, differs from it in impor…
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We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI when the differential conductance is negative. This behavior, although qualitatively similar to that found in double-barrier diodes, differs from it in important details. In TBRTDs the noise reduction is considerably larger than predicted by a semi-classical model, and the enhancement does not correlate with the strength of the negative differential conductance. These results suggest an incomplete understanding of the noise properties of multiple-barrier heterostructures.
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Submitted 22 December, 2004;
originally announced December 2004.
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Spin-orbit induced interference in polygon-structures
Authors:
Marc J. van Veenhuizen,
Takaaki Koga,
Junsaku Nitta
Abstract:
We investigate the spin-orbit induced spin-interference pattern of ballistic electrons travelling along any regular polygon. It is found that the spin-interference depends strongly on the Rashba and Dresselhaus spin-orbit constants as well as on the sidelength and alignment of the polygon. We derive the analytical formulae for the limiting cases of either zero Dresselhaus or zero Rashba spin-orb…
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We investigate the spin-orbit induced spin-interference pattern of ballistic electrons travelling along any regular polygon. It is found that the spin-interference depends strongly on the Rashba and Dresselhaus spin-orbit constants as well as on the sidelength and alignment of the polygon. We derive the analytical formulae for the limiting cases of either zero Dresselhaus or zero Rashba spin-orbit coupling, including the result obtained for a circle. We calculate the nonzero Dresselhaus and Rashba case numerically for the square, triangle, hexagon, and circle and discuss the observability of the spin-interference which can potentially be used to measure the Rashba and Dresselhaus coefficients.
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Submitted 22 December, 2004;
originally announced December 2004.
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Mesoscopic Stern-Gerlach spin filter by nonuniform spin-orbit interaction
Authors:
Jun-ichiro Ohe,
Masayuki Yamamoto,
Tomi Ohtsuki,
Junsaku Nitta
Abstract:
A novel spin filtering in two-dimensional electron system with nonuniform spin-orbit interactions (SOI) is theoretically studied. The strength of SOI is modulated perpendicular to the charge current. A spatial gradient of effective magnetic field due to the nonuniform SOI causes the Stern-Gerlach type spin separation. The direction of the polarization is perpendicular to the current and parallel…
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A novel spin filtering in two-dimensional electron system with nonuniform spin-orbit interactions (SOI) is theoretically studied. The strength of SOI is modulated perpendicular to the charge current. A spatial gradient of effective magnetic field due to the nonuniform SOI causes the Stern-Gerlach type spin separation. The direction of the polarization is perpendicular to the current and parallel to the spatial gradient. Almost 100 % spin polarization can be realized even without applying any external magnetic fields and without attaching ferromagnetic contacts. The spin polarization persists even in the presence of randomness.
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Submitted 14 June, 2005; v1 submitted 7 September, 2004;
originally announced September 2004.
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Unusual Tunneling Characteristics of Double-quantum-well Heterostructures
Authors:
Y. Lin,
J. Nitta,
; A. K. M. Newaz,
W. Song,
E. E. Mendez
Abstract:
We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling current was mostly determined by the correlation between the emitter and the state in one well, and not by that between those in both wells. Clear magnetic-fie…
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We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling current was mostly determined by the correlation between the emitter and the state in one well, and not by that between those in both wells. Clear magnetic-field-dependent features were first observed before the main resonance, corresponding to tunneling channels into the Landau levels of the well near the emitter. These facts provide evidence of the violation of in-plane momentum conservation in two-dimensional systems.
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Submitted 14 July, 2004;
originally announced July 2004.
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Effect of an InP/In$_{0.53}$Ga$_{0.47}$As Interface on Spin-orbit Interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As Heterostructures
Authors:
Y. Lin,
T. Koga,
J. Nitta
Abstract:
We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-or…
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We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $α$ turned out to be enhanced or diminished for samples with the front- or back-do** position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $\mathbf{k\cdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
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Submitted 20 November, 2004; v1 submitted 1 July, 2004;
originally announced July 2004.
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Competition between Spin-Orbit Interaction and Zeeman Coupling in Rashba 2DEGs
Authors:
F. E. Meijer,
A. F. Morpurgo,
T. M. Klapwijk,
T. Koga,
J. Nitta
Abstract:
We investigate systematically how the interplay between Rashba spin-orbit interaction and Zeeman coupling affects the electron transport and the spin dynamics in InGaAs-based 2D electron gases. From the quantitative analysis of the magnetoconductance, measured in the presence of an in-plane magnetic field, we conclude that this interplay results in a spin-induced breaking of time reversal symmet…
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We investigate systematically how the interplay between Rashba spin-orbit interaction and Zeeman coupling affects the electron transport and the spin dynamics in InGaAs-based 2D electron gases. From the quantitative analysis of the magnetoconductance, measured in the presence of an in-plane magnetic field, we conclude that this interplay results in a spin-induced breaking of time reversal symmetry and in an enhancement of the spin relaxation time. Both effects, due to a partial alignment of the electron spin along the applied magnetic field, are found to be in excellent agreement with recent theoretical predictions.
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Submitted 4 June, 2004;
originally announced June 2004.
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Statistical significance of fine structure in the frequency spectrum of Aharonov-Bohm conductance oscillations
Authors:
F. E. Meijer,
A. F. Morpurgo,
T. M. Klapwijk,
J. Nitta,
T. Koga
Abstract:
We discuss a statistical analysis of Aharonov-Bohm conductance oscillations measured in a two-dimensional ring, in the presence of Rashba spin-orbit interaction. Measurements performed at different values of gate voltage are used to calculate the ensemble-averaged modulus of the Fourier spectrum and, at each frequency, the standard deviation associated to the average. This allows us to prove the…
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We discuss a statistical analysis of Aharonov-Bohm conductance oscillations measured in a two-dimensional ring, in the presence of Rashba spin-orbit interaction. Measurements performed at different values of gate voltage are used to calculate the ensemble-averaged modulus of the Fourier spectrum and, at each frequency, the standard deviation associated to the average. This allows us to prove the statistical significance of a splitting that we observe in the h/e peak of the averaged spectrum. Our work illustrates in detail the role of sample specific effects on the frequency spectrum of Aharonov-Bohm conductance oscillations and it demonstrates how fine structures of a different physical origin can be discriminated from sample specific features.
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Submitted 31 October, 2003; v1 submitted 26 August, 2003;
originally announced August 2003.
