-
An Investigation into the Thermoelectric Characteristics of Silver-based Chalcopyrites Utilizing a Non-empirical Range-separated Dielectric-dependent Hybrid Approach
Authors:
Dimple Rani,
Subarata Jana,
Manish Kumar Niranjan,
Prasanjit Samal
Abstract:
Our investigation explores the intricate domain of thermoelectric phenomena within silver (Ag)-infused chalcopyrites, focusing on compositions such as AgXTe$_2$ (where X=Ga, In) and the complex quaternary system Ag$_2$ZnSn/GeY$_2$ (with Y=S, Se). Using a sophisticated combination of methodologies, we integrate a non-empirical screened dielectric-dependent hybrid (DDH) functional with semiclassical…
▽ More
Our investigation explores the intricate domain of thermoelectric phenomena within silver (Ag)-infused chalcopyrites, focusing on compositions such as AgXTe$_2$ (where X=Ga, In) and the complex quaternary system Ag$_2$ZnSn/GeY$_2$ (with Y=S, Se). Using a sophisticated combination of methodologies, we integrate a non-empirical screened dielectric-dependent hybrid (DDH) functional with semiclassical Boltzmann transport theory. This approach allows us to conduct a detailed analysis of critical thermoelectric properties, including electrical conductivity, Seebeck coefficient, and power factor. Our methodology goes beyond superficial assessments, delving into the intricate interplay of material properties to reveal their true thermoelectric potential. Additionally, we investigate the often-overlooked phenomena of phonon scattering by leveraging both the elastic constant tensor and the deformation potential method. This enables a rigorous examination of electron relaxation time and lattice thermal conductivity, enhancing the robustness of our predictions and demonstrating our commitment to thorough exploration.Through our rigorous investigation, we identify materials with a thermoelectric figure of merit (ZT = $σS^{2}T/ κ$) exceeding the critical threshold of unity. This significant achievement signals the discovery of materials capable of revolutionizing efficient thermoelectric systems. Our findings delineate a promising trajectory, laying the groundwork for the emergence of a new class of Ag-based chalcopyrites distinguished by their exceptional thermoelectric characteristics. This research not only contributes to the understanding of materials science principles but also catalyzes transformative advancements in thermoelectric technology.
△ Less
Submitted 19 May, 2024;
originally announced May 2024.
-
Accurate and efficient prediction of the band gaps and optical spectra of chalcopyrite semiconductors from a non-empirical range-separated dielectric-dependent hybrid: Comparison with many-body perturbation theory
Authors:
Arghya Ghosh,
Subrata Jana,
Dimple Rani,
Manoar Hossain,
Manish K Niranjan,
Prasanjit Samal
Abstract:
The accurate prediction of electronic and optical properties in chalcopyrite semiconductors has been a persistent challenge for density functional theory (DFT) based approaches. Addressing this issue, we demonstrate that very accurate results can be obtained using a non-empirical screened dielectric-dependent hybrid (DDH) functional. This novel approach showcases its impressive capability to accur…
▽ More
The accurate prediction of electronic and optical properties in chalcopyrite semiconductors has been a persistent challenge for density functional theory (DFT) based approaches. Addressing this issue, we demonstrate that very accurate results can be obtained using a non-empirical screened dielectric-dependent hybrid (DDH) functional. This novel approach showcases its impressive capability to accurately determine band gaps, optical bowing parameters, and optical absorption spectra for chalcopyrite systems. What sets the screened DDH functional apart is its adeptness in capturing the many-body physics associated with highly localized $d$ electrons. Notably, the accuracy is comparable to the many-body perturbation based methods (such as $G_0W_0$ or its various approximations for band gaps and Bethe-Salpeter equation (BSE) on the top of the $G_0W_0$ or its various approximations for optical spectra) with less computational cost, ensuring a more accessible application across various research domains. The present results show the predictive power of the screened DDH functional, pointing toward promising applications where computational efficiency and predictive accuracy are crucial considerations. Overall, the screened DDH functional offers a compelling balance between cost-effectiveness and precision, making it a valuable tool for future endeavors in exploring chalcopyrite semiconductors and beyond.
△ Less
Submitted 30 January, 2024;
originally announced January 2024.
-
Efficient and improved prediction of the band offsets at semiconductor heterojunctions from meta-GGA density functionals
Authors:
Arghya Ghosh,
Subrata Jana,
Tomáš Rauch,
Fabien Tran,
Miguel A. L. Marques,
Silvana Botti,
Lucian A. Constantin,
Manish K. Niranjan,
Prasanjit Samal
Abstract:
Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient ap…
▽ More
Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient approximation (GGA) significantly underestimate the bulk band gaps. This, in turn, results in inaccurate estimates of the band offsets at the heterointerfaces. In this paper, we investigate the performance of several advanced meta-GGA functionals in the computational prediction of band offsets at semiconductor heterojunctions. In particular, we investigate the performance of r2SCAN (revised strongly-constrained and appropriately-normed functional), rMGGAC (revised semilocal functional based on cuspless hydrogen model and Pauli kinetic energy density functional), mTASK (modified Aschebrock and Kümmel meta-GGA functional), and LMBJ (local modified Becke-Johnson) exchange-correlation functionals. Our results strongly suggest that these meta-GGA functionals for supercell calculations perform quite well, especially, when compared to computationally more demanding GW calculations. We also present band offsets calculated using ionization potentials and electron affinities, as well as band alignment via the branch point energies. Overall, our study shows that the aforementioned meta-GGA functionals can be used within the DFT framework to estimate the band offsets in semiconductor heterostructures with predictive accuracy.
△ Less
Submitted 27 July, 2022;
originally announced July 2022.
-
Correct and accurate polymorphic energy ordering of transition-metal monoxides obtained from semilocal and onsite-hybrid exchange-correlation approximations
Authors:
Arghya Ghosh,
Subrata Jana,
Manish K Niranjan,
Fabien Tran,
David Wimberger,
Peter Blaha,
Lucian A. Constantin,
Prasanjit Samal
Abstract:
The relative energetic stability of the structural phases of common antiferromagnetic transition-metal oxides (MnO, FeO, CoO, and NiO) within the semilocal and hybrid density functionals are fraught with difficulties. In particular, MnO is known to be the most difficult case for almost all common semilocal and hybrid density approximations. Here, we show that the meta-generalized gradient approxim…
▽ More
The relative energetic stability of the structural phases of common antiferromagnetic transition-metal oxides (MnO, FeO, CoO, and NiO) within the semilocal and hybrid density functionals are fraught with difficulties. In particular, MnO is known to be the most difficult case for almost all common semilocal and hybrid density approximations. Here, we show that the meta-generalized gradient approximation (meta-GGA) constructed from the cuspless hydrogen model and Pauli kinetic energy density (MGGAC) can lead to the correct ground state of MnO. The relative energy differences of zinc-blende (zb) and rock-salt (rs) structures as computed using MGGAC are found to be in nice agreement with those obtained from high-level correlation methods like the random phase approximation or quantum Monte Carlo techniques. Besides, we have also applied the onsite hybrid functionals (closely related to DFT+U ) based on GGA and meta-GGA functionals, and it is shown that a relatively high amount of Hartree-Fock exchange is necessary to obtain the correct ground-state structure. Our present investigation suggests that the semilocal MGGAC and onsite hybrids, both being computationally cheap, as methods of choice for the calculation of the relative stability of antiferromagnetic transition-metal oxides having potential applications in solid-state physics and structural chemistry.
△ Less
Submitted 16 December, 2021;
originally announced December 2021.
-
Improved electronic structure prediction of chalcopyrite semiconductors from a semilocal density functional based on Pauli kinetic energy enhancement factor
Authors:
Arghya Ghosh,
Subrata Jana,
Manish K Niranjan,
Sushant Kumar Behera,
Lucian A. Constantin,
Prasanjit Samal
Abstract:
The correct treatment of d electrons is of prime importance in order to predict the electronic properties of the prototype chalcopyrite semiconductors. The effect of d states is linked with the anion displacement parameter u, which in turn influences the bandgap of these systems. Semilocal exchange-correlation functionals which yield good structural properties of semiconductors and insulators ofte…
▽ More
The correct treatment of d electrons is of prime importance in order to predict the electronic properties of the prototype chalcopyrite semiconductors. The effect of d states is linked with the anion displacement parameter u, which in turn influences the bandgap of these systems. Semilocal exchange-correlation functionals which yield good structural properties of semiconductors and insulators often fail to predict reasonable u because of the underestimation of the bandgaps arising from the strong interplay between d electrons. In the present study, we show that the meta-generalized gradient approximation (meta-GGA) obtained from the cuspless hydrogen density (MGGAC) [Phys. Rev. B 100, 155140 (2019)] performs in an improved manner in apprehending the key features of the electronic properties of chalcopyrites, and its bandgaps are comparative to that obtained using state-of-art hybrid methods. Moreover, the present assessment also shows the importance of the Pauli kinetic energy enhancement factor, $α=(τ-τ^W)/τ^{unif}$ in describing the d electrons in chalcopyrites. The present study strongly suggests that the MGGAC functional within semilocal approximations can be a better and preferred choice to study the chalcopyrites and other solid-state systems due to its superior performance and significantly low computational cost.
△ Less
Submitted 24 May, 2021;
originally announced May 2021.
-
Ferroelectric Dead Layer Driven by a Polar Interface
Authors:
Y. Wang,
M. K. Niranjan,
K. Janicka,
J. P. Velev,
M. Ye. Zhuravlev,
S. S. Jaswal,
E. Y. Tsymbal
Abstract:
Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as do** layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron cha…
▽ More
Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as do** layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron charge leaking into the BaTiO3 layer. The amount of the leaking charge is controlled by the boundary conditions which are different for three heterostructures considered, namely Vacuum/LaO/BaTiO3/LaO, LaO/BaTiO3, and SrRuO3/LaO/BaTiO3/LaO. The intrinsic electric field forces ionic displacements in BaTiO3 to produce the electric polarization directed into the interior of the BaTiO3 layer. This creates a ferroelectric dead layer near the interfaces that is non-switchable and thus detrimental to ferroelectricity. Our first-principles and model calculations demonstrate that the effect is stronger for a larger effective ionic charge at the interface and longer screening length due to a stronger intrinsic electric field that penetrates deeper into the ferroelectric. The predicted mechanism for a ferroelectric dead layer at the interface controls the critical thickness for ferroelectricity in systems with polar interfaces.
△ Less
Submitted 4 October, 2010; v1 submitted 14 April, 2010;
originally announced April 2010.
-
Electric Field Effect on Magnetization and Magnetocrystalline Anisotropy at the Fe/MgO(001) Interface
Authors:
Manish K. Niranjan,
Chun-Gang Duan,
Sitaram S. Jaswal,
Evgeny Y. Tsymbal
Abstract:
Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface magnetization and magnetocrystalline anisotropy can be substantially enhanced if the electric field is applied across a dielectric material with a large dielect…
▽ More
Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface magnetization and magnetocrystalline anisotropy can be substantially enhanced if the electric field is applied across a dielectric material with a large dielectric constant. In particular, we predict an enhancement of the interface magnetoelectric susceptibility by a factor of the dielectric constant of MgO over that of the free standing Fe (001) surface. We also predict a significant effect of electric field on the interface magnetocrystalline anisotropy due to the change in the relative occupancy of the 3d-orbitals of Fe atoms at the Fe/MgO interface. These results may be interesting for technological applications such as electrically controlled magnetic data storage.
△ Less
Submitted 30 March, 2010;
originally announced March 2010.
-
Suppression of Octahedral Tilts and Associated Changes of Electronic Properties at Epitaxial Oxide Heterostructure Interfaces
Authors:
A. Borisevich,
H. J. Chang,
M. Huijben,
M. P. Oxley,
S. Okamoto,
M. K. Niranjan,
J. D. Burton,
E. Y. Tsymbal,
Y. H. Chu,
P. Yu,
R. Ramesh,
S. V. Kalinin,
S. J. Pennycook
Abstract:
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change o…
▽ More
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
△ Less
Submitted 15 February, 2010;
originally announced February 2010.
-
Prediction of a spin-polarized two-dimensional electron gas at the LaAlO3/EuO(001) interface
Authors:
Yong Wang,
Manish K. Niranjan,
J. D. Burton,
Joonhee M. An,
Kirill D. Belashchenko,
Evgeny Y. Tsymbal
Abstract:
First-principles calculations predict the existence of a spin-polarized two-dimensional electron gas (2DEG) at the LaO/EuO interface in a LaAlO3/EuO (001) heterostructure. This polar interface favors electron do** into the Eu-5d conduction bands resulting in a 2DEG formed at the interface. Due to the exchange splitting of the Eu-5d states the 2DEG is spin-polarized below the Curie temperature…
▽ More
First-principles calculations predict the existence of a spin-polarized two-dimensional electron gas (2DEG) at the LaO/EuO interface in a LaAlO3/EuO (001) heterostructure. This polar interface favors electron do** into the Eu-5d conduction bands resulting in a 2DEG formed at the interface. Due to the exchange splitting of the Eu-5d states the 2DEG is spin-polarized below the Curie temperature of EuO. The predicted mechanism for the formation of a spinpolarized 2DEG at the interface between polar and ferromagnetic insulators may provide a robust magnetism of the 2DEG which is interesting for spintronics applications.
△ Less
Submitted 27 March, 2009;
originally announced March 2009.
-
Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first-principles
Authors:
Julian P. Velev,
Chun-Gang Duan,
J. D. Burton,
Alexander Smogunov,
Manish K. Niranjan,
Erio Tosatti,
S. S. Jaswal,
Evgeny Y. Tsymbal
Abstract:
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectric barriers were proposed to extend the functionality of MTJs. Due to the sensi…
▽ More
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectric barriers were proposed to extend the functionality of MTJs. Due to the sensitivity of conductance to the magnetization alignment of the electrodes (tunnelling magnetoresistance) and the polarization orientation in the ferroelectric barrier (tunnelling electroresistance), these multiferroic tunnel junctions (MFTJs) may serve as four-state resistance devices. Based on first-principles calculations we demonstrate four resistance states in SrRuO3/BaTiO3/SrRuO3 MFTJs with asymmetric interfaces. We find that the resistance of such a MFTJ is significantly changed when the electric polarization of the barrier is reversed and/or when the magnetizations of the electrodes are switched from parallel to antiparallel. These results reveal the exciting prospects of MFTJs for application as multifunctional spintronic devices.
△ Less
Submitted 12 December, 2008;
originally announced December 2008.
