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Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
Authors:
Imad Limame,
Ching-Wen Shih,
Alexej Koltchanov,
Fabian Heisinger,
Felix Nippert,
Moritz Plattner,
Johannes Schall,
Markus R. Wagner,
Sven Rodt,
Petr Klenovsky,
Stephan Reitzenstein
Abstract:
We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering,…
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We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve separation in emission energy by about 150 meV of positioned and non-positioned quantum dots and a local increase of the emitter density in a single layer. Furthermore, we achieve a threefold increase of the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is particularly valuable for using the SCQDs in microlaser applications. Moreover, we obtain direct control over emission properties by adjusting the growth and fabrication parameters. Our optimization of site-controlled growth of quantum dots enables the development of photonic devices with enhanced light-matter interaction and microlasers with increased confinement factor and spontaneous emission coupling efficiency.
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Submitted 9 November, 2023;
originally announced November 2023.
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Tackling Disorder in $γ$-Ga$_2$O$_3$
Authors:
Laura E. Ratcliff,
Takayoshi Oshima,
Felix Nippert,
Benjamin M. Janzen,
Elias Kluth,
Rüdiger Goldhahn,
Martin Feneberg,
Piero Mazzolini,
Oliver Bierwagen,
Charlotte Wouters,
Musbah Nofal,
Martin Albrecht,
Jack E. N. Swallow,
Leanne A. H. Jones,
Pardeep K. Thakur,
Tien-Lin Lee,
Curran Kalha,
Christoph Schlueter,
Tim D. Veal,
Joel B. Varley,
Markus R. Wagner,
Anna Regoutz
Abstract:
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent…
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Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby develo** a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.
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Submitted 9 May, 2022;
originally announced May 2022.
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Electronic excitations stabilised by a degenerate electron gas in semiconductors
Authors:
C. Nenstiel,
G. Callsen,
F. Nippert,
T. Kure,
M. R. Wagner,
S. Schlichting,
N. Jankowski,
M. P. Hoffmann,
S. Fritze,
A. Dadgar,
A. Krost,
A. Hoffmann,
F. Bechstedt
Abstract:
Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character due to even-numbered pair spins. In the presence of a degenerate electron gas, such excitons dissociate due to free carrier screening, leaving a spectrally broad and faint optical signature behind. Contrary to thi…
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Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character due to even-numbered pair spins. In the presence of a degenerate electron gas, such excitons dissociate due to free carrier screening, leaving a spectrally broad and faint optical signature behind. Contrary to this expected behaviour, we have discovered pronounced emission traces in bulk, germanium-doped GaN up to 100 K, mimicking excitonic behaviour at high free electron concentrations from 3.4E19/cm3 to 8.9E19/cm3. Consequently, we show that a degenerate, three-dimensional electron gas stabilizes a novel class of quasiparticles, named collexons, by many-particle effects dominated by exchange of electrons with the Fermi gas. The observation of collexons and their stabilisation with rising do** concentration, is facilitated by a superior crystal quality due to perfect substitution of the host atom with the dopant.
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Submitted 5 October, 2016;
originally announced October 2016.
