Showing 1–50 of 65 results for author: Nikonov, D E

Understanding magnetoelectric switching in BiFeO$_3$ thin films

Authors: Natalya S. Fedorova, Dmitri E. Nikonov, John M. Mangeri, Hai Li, Ian A. Young, Jorge Íñiguez

Abstract: In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a realistic model of a BiFeO$_3$ film, including the Landau energy of isolated domains as well as the constraints that account for the presence of the substrate… ▽ More In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a realistic model of a BiFeO$_3$ film, including the Landau energy of isolated domains as well as the constraints that account for the presence of the substrate and the multidomain configuration found experimentally. We use this model to obtain statistical information about the switching behavior - by running dynamical simulations based on the Landau-Khalatnikov time-evolution equation, including thermal fluctuations - and we thus identify the factors that drive the two-step polarization reversal observed in the experiments. Additionally, we apply our model to test potential strategies for optimizing the switching characteristics. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Comments: 16 pages, 9 figures

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Authors: Diogo C. Vaz, Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young, Fèlix Casanova

Abstract: With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel… ▽ More With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Comments: 17 pages, 5 figures

Efficient Optimization with Higher-Order Ising Machines

Authors: Connor Bybee, Denis Kleyko, Dmitri E. Nikonov, Amir Khosrowshahi, Bruno A. Olshausen, Friedrich T. Sommer

Abstract: A prominent approach to solving combinatorial optimization problems on parallel hardware is Ising machines, i.e., hardware implementations of networks of interacting binary spin variables. Most Ising machines leverage second-order interactions although important classes of optimization problems, such as satisfiability problems, map more seamlessly to Ising networks with higher-order interactions.… ▽ More A prominent approach to solving combinatorial optimization problems on parallel hardware is Ising machines, i.e., hardware implementations of networks of interacting binary spin variables. Most Ising machines leverage second-order interactions although important classes of optimization problems, such as satisfiability problems, map more seamlessly to Ising networks with higher-order interactions. Here, we demonstrate that higher-order Ising machines can solve satisfiability problems more resource-efficiently in terms of the number of spin variables and their connections when compared to traditional second-order Ising machines. Further, our results show on a benchmark dataset of Boolean \textit{k}-satisfiability problems that higher-order Ising machines implemented with coupled oscillators rapidly find solutions that are better than second-order Ising machines, thus, improving the current state-of-the-art for Ising machines. △ Less

Submitted 6 December, 2022; originally announced December 2022.

Comments: 13 pages, 4 figures

All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$

Authors: Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J. Plombon, Hai Li, Dmitri E. Nikonov, Andrey Chuvilin, Luis E. Hueso, Ian A. Young, Fèlix Casanova

Abstract: One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charg… ▽ More One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed. △ Less

Submitted 18 October, 2022; originally announced October 2022.

Comments: Main text (18 pages, 3 figures, 2 tables) and supporting information (18 pages)

Journal ref: Nano Lett. 22, 7992-7999 (2022)

First-principles Landau-like potential for BiFeO$_3$ and related materials

Authors: Natalya S. Fedorova, Dmitri E. Nikonov, Hai Li, Ian A. Young, Jorge Íñiguez

Abstract: In this work we introduce the simplest, lowest-order Landau-like potential for BiFeO$_3$ and La-doped BiFeO$_3$ as an expansion around the paraelectric cubic phase in powers of polarization, FeO$_6$ octahedral rotations and strains. We present an analytical approach for computing the model parameters from density functional theory. We illustrate our approach by computing the potentials for BiFeO… ▽ More In this work we introduce the simplest, lowest-order Landau-like potential for BiFeO$_3$ and La-doped BiFeO$_3$ as an expansion around the paraelectric cubic phase in powers of polarization, FeO$_6$ octahedral rotations and strains. We present an analytical approach for computing the model parameters from density functional theory. We illustrate our approach by computing the potentials for BiFeO$_3$ and La$_{0.25}$Bi$_{0.75}$FeO$_3$ and show that, overall, we are able to capture the first-principles results accurately. The computed models allow us to identify and explain the main interactions controlling the relative stability of the competing low-energy phases of these compounds. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Comments: 12 pages, 6 figures

Integer Factorization with Compositional Distributed Representations

Authors: Denis Kleyko, Connor Bybee, Christopher J. Kymn, Bruno A. Olshausen, Amir Khosrowshahi, Dmitri E. Nikonov, Friedrich T. Sommer, E. Paxon Frady

Abstract: In this paper, we present an approach to integer factorization using distributed representations formed with Vector Symbolic Architectures. The approach formulates integer factorization in a manner such that it can be solved using neural networks and potentially implemented on parallel neuromorphic hardware. We introduce a method for encoding numbers in distributed vector spaces and explain how th… ▽ More In this paper, we present an approach to integer factorization using distributed representations formed with Vector Symbolic Architectures. The approach formulates integer factorization in a manner such that it can be solved using neural networks and potentially implemented on parallel neuromorphic hardware. We introduce a method for encoding numbers in distributed vector spaces and explain how the resonator network can solve the integer factorization problem. We evaluate the approach on factorization of semiprimes by measuring the factorization accuracy versus the scale of the problem. We also demonstrate how the proposed approach generalizes beyond the factorization of semiprimes; in principle, it can be used for factorization of any composite number. This work demonstrates how a well-known combinatorial search problem may be formulated and solved within the framework of Vector Symbolic Architectures, and it opens the door to solving similarly difficult problems in other domains. △ Less

Submitted 2 March, 2022; originally announced March 2022.

Comments: 8 pages, 4 figures

Journal ref: NICE 2022: Neuro-Inspired Computational Elements Conference

Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Authors: Hai Li, Dmitri E. Nikonov, Chia-Ching Lin, Kerem Camsari, Yu-Ching Liao, Chia-Sheng Hsu, Azad Naeemi, Ian A. Young

Abstract: Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO… ▽ More Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO) device. Also, a more rigorous physics model of ferroelectric and magnetoelectric switching of ferromagnets, based on Landau-Lifshitz-Gilbert (LLG) and Landau-Khalatnikov (LK) equations, is presented. With the combined model implemented in a SPICE circuit simulator environment, simulation results were obtained which show feasibility of MESO implementation and functional operation of buffers, oscillators, and majority gates. △ Less

Submitted 21 October, 2021; originally announced October 2021.

Comments: 11 pages, 21 figures

Journal ref: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2022)

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Authors: Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto, Maxen Cosset-Cheneau, Srijani Mallik, Raphaël Salazar, Paul Noël, Diogo Castro Vaz, Felix Trier, Suvam Bhattacharya, Anke Sander, Patrick Le Fèvre, François Bertran, Guilhem Saiz, Gerbold Ménard, Nicolas Bergeal, Agnès Barthélémy, Hai Li, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Julien Rault, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an… ▽ More Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pum** experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 202102102 (2021)

Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion

Authors: Luis M. Vicente-Arche, Srijani Mallik, Maxen Cosset-Cheneau, Paul Noël, Diogo Vaz, Felix Trier, Tanay A. Gosavi, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Anke Sander, Agnès Barthélémy, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties o… ▽ More SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pum** ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Materials 5, 064005 (2021)

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Authors: Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov, Ian A. Young, Azad Naeemi

Abstract: The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and science in the past decade. In this article, we present a physical picture for a better understanding of the hysteresis-free charge boost effect observed experime… ▽ More The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and science in the past decade. In this article, we present a physical picture for a better understanding of the hysteresis-free charge boost effect observed experimentally in metal-ferroelectric-insulator-metal (MFIM) capacitors. By introducing the dielectric (DE) leakage and interfacial trapped charges, our simulations of the hysteresis loops are in a strong agreement with the experimental measurements, suggesting the existence of an interfacial oxide layer at the FE-metal interface in metal-ferroelectric-metal (MFM) capacitors. Based on the pulse switching measurements, we find that the charge enhancement and hysteresis are dominated by the FE domain viscosity and DE leakage, respectively. Our simulation results show that the underlying mechanisms for the observed hysteresis-free charge enhancement in MFIM may be physically different from the alleged NC stabilization and capacitance matching. Moreover, the link between Merz's law and the phenomenological kinetic coefficient is discussed, and the possible cause of the residual charges observed after pulse switching is explained by the trapped charge dynamics at the FE-DE interface. The physical interpretation presented in this work can provide important insights into the NC effect in MFIM capacitors and future studies of low-power logic devices. △ Less

Submitted 4 December, 2020; originally announced December 2020.

Comments: 9 pages, 7 captioned figures, 1 table

Journal ref: Phys. Rev. Applied 15, 034048 (2021)

A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction

Authors: Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta, Sou-Chi Chang, Chia-Sheng Hsu, Ian A. Young, Azad Naeemi

Abstract: The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in the BiFeO3/CoFe heterojunction is theoretically quantified to be on to the order of 100 ps. Our results indicate that the switching behavior of CoFe… ▽ More The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in the BiFeO3/CoFe heterojunction is theoretically quantified to be on to the order of 100 ps. Our results indicate that the switching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated by the rotation of the Neel vector in BiFeO3 rather than the unidirectional exchange bias at the interface. We also quantify the magnitude of the interface exchange coupling coefficient J_int to be 0.32 pJ/m by comparing our simulation results with the giant magnetoresistance (GMR) curves and the magnetic hysteresis loop in the experiments. To the best of our knowledge, this is the first time that J_int is extracted quantitatively from experiments. Furthermore, we demonstrate that the switching success rate and the thermal stability of the BiFeO3/CoFe heterojunction can be improved by reducing the thickness of CoFe and increasing the length to width aspect ratio of the BiFeO3/CoFe heterojunction. Our theoretical model provides a comprehensive framework to study the magnetoelectric properties and the manipulation of the magnetic order of CoFe in the BiFeO3/CoFe heterojunction. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Authors: Van Tuong Pham, Inge Groen, Sasikanth Manipatruni, Won Young Choi, Dmitri E. Nikonov, Edurne Sagasta, Chia-Ching Lin, Tanay Gosavi, Alain Marty, Luis E. Hueso, Ian Young, Fèlix Casanova

Abstract: Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experim… ▽ More Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories. △ Less

Submitted 24 February, 2020; originally announced February 2020.

Comments: 13 pages, 3 figures, Extended Data, Supplementary Information

Journal ref: Nature Electronics 3, 309-315 (2020)

Multi-domain Characterization of Ferroelectric Switching Dynamics with a Physics-based SPICE Circuit Model for Phase Field Simulations

Authors: Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov, Ian A. Young, Azad Naeemi

Abstract: In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase field approach, where the three-dimensional time-dependent Ginzburg-Landau (TDGL) equation and Poisson's equation are self-consistently solved with the SPICE simulator. Systematically calibrated based on the experiment… ▽ More In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase field approach, where the three-dimensional time-dependent Ginzburg-Landau (TDGL) equation and Poisson's equation are self-consistently solved with the SPICE simulator. Systematically calibrated based on the experimental measurements, the model well captures transient negative capacitance in pulse switching dynamics, with domain interaction and viscosity being the key parameters. It is found that the influence of pulse amplitudes on voltage transient behaviors can be attributed to the fact that the FE free energy profile strongly depends on how the domains are interacted. This finding has an important implication on the charge-boost induced by stabilization of negative capacitance in an FE + dielectric (DE) stack since the so-called capacitance matching needs to be designed at a specific operation voltage or frequency. In addition, we extract the domain viscosity dynamics during polarization switching according to the experimental measurements. For the first time, a physics-based circuit-compatible SPICE model for multi-domain phase field simulations is established to reveal the effect of domain interaction on the FE energy profile and microscopic domain evolution. △ Less

Submitted 18 December, 2019; originally announced December 2019.

Comments: 17 pages, 6 figures

A Coupled CMOS Oscillator Array for 8ns and 55pJ Inference in Convolutional Neural Networks

Authors: D. E. Nikonov, P. Kurahashi, J. S. Ayers, H. -J. Lee, Y. Fan, I. A. Young

Abstract: Oscillator neural networks (ONN) based on arrays of 26 CMOS ring oscillators designed and fabricated. ONN are used for inference of dot products with image fragments and kernels necessary for convolutional neural networks. The inputs are encoded as frequency shifts of oscillators using current DACs. Degree of match (DOM) is determined from oscillators synchronization. Measurements demonstrate high… ▽ More Oscillator neural networks (ONN) based on arrays of 26 CMOS ring oscillators designed and fabricated. ONN are used for inference of dot products with image fragments and kernels necessary for convolutional neural networks. The inputs are encoded as frequency shifts of oscillators using current DACs. Degree of match (DOM) is determined from oscillators synchronization. Measurements demonstrate high correlation of DOM and dot products. Inference requires the time of 8ns and energy of 55pJ. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Comments: 7 pages, 7 figures

Convolution Inference via Synchronization of a Coupled CMOS Oscillator Array

Authors: D. E. Nikonov, P. Kurahashi, J. S. Ayers, H. -J. Lee, Y. Fan, I. A. Young

Abstract: Oscillator neural networks (ONN) are a promising hardware option for artificial intelligence. With an abundance of theoretical treatments of ONNs, few experimental implementations exist to date. In contrast to prior publications of only building block functionality, we report a practical experimental demonstration of neural computing using an ONN. The arrays contain 26 CMOS ring oscillators in the… ▽ More Oscillator neural networks (ONN) are a promising hardware option for artificial intelligence. With an abundance of theoretical treatments of ONNs, few experimental implementations exist to date. In contrast to prior publications of only building block functionality, we report a practical experimental demonstration of neural computing using an ONN. The arrays contain 26 CMOS ring oscillators in the GHz range of frequencies tuned by image data and filters. Synchronization of oscillators results in an analog output voltage approximating convolution neural network operation. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Comments: 4 pages, 11 figures

Benchmarking Physical Performance of Neural Inference Circuits

Authors: Dmitri E. Nikonov, Ian A. Young

Abstract: Numerous neural network circuits and architectures are presently under active research for application to artificial intelligence and machine learning. Their physical performance metrics (area, time, energy) are estimated. Various types of neural networks (artificial, cellular, spiking, and oscillator) are implemented with multiple CMOS and beyond-CMOS (spintronic, ferroelectric, resistive memory)… ▽ More Numerous neural network circuits and architectures are presently under active research for application to artificial intelligence and machine learning. Their physical performance metrics (area, time, energy) are estimated. Various types of neural networks (artificial, cellular, spiking, and oscillator) are implemented with multiple CMOS and beyond-CMOS (spintronic, ferroelectric, resistive memory) devices. A consistent and transparent methodology is proposed and used to benchmark this comprehensive set of options across several application cases. Promising architecture/device combinations are identified. △ Less

Submitted 12 July, 2019; originally announced July 2019.

Comments: 59 pages, 37 figures, 7 tables

Exciton gas transport through nano-constrictions

Authors: Chao Xu, J. R. Leonard, C. J. Dorow, L. V. Butov, M. M. Fogler, D. E. Nikonov, I. A. Young

Abstract: An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors. We study theoretically transmission of such bosonic quasiparticles through nano-constrictions. We show that quantum transport phenomena, e.g., conductance quant… ▽ More An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors. We study theoretically transmission of such bosonic quasiparticles through nano-constrictions. We show that quantum transport phenomena, e.g., conductance quantization, single-slit diffraction, two-slit interference, and the Talbot effect, are experimentally realizable in systems of indirect excitons. We discuss similarities and differences between these phenomena and their counterparts in electronic devices. △ Less

Submitted 25 June, 2019; v1 submitted 5 May, 2019; originally announced May 2019.

Comments: (v2) Updated title, text, and references; 12 pages, 9 figures

Simulation of the Magnetization Dynamics of a Single Domain BiFeO$_3$ Thin Film

Authors: Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta, Sou-Chi Chang, Sasikanth Manipatruni, Ian A. Young, Azad Naeemi

Abstract: The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a… ▽ More The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a G-type antiferromagnet. This work theoretically demonstrates that due to the rotation of the magnetic hard axis following the polarization reversal, the Neel vector can be switched by 180 degrees, while the weak magnetization can remain unchanged. The simulation results are consistent with the ab initio calculation, where the Neel vector rotates during polarization rotation, and also match our calculation of the dynamics of order parameter using Landau-Ginzburg theory. We also find that the switching time of the Neel vector is determined by the speed polarization switching and is predicted to be as short as 30 ps. △ Less

Submitted 8 February, 2019; originally announced February 2019.

Localized bright luminescence of indirect excitons and trions in MoSe$_2$/WSe$_2$ van der Waals heterostructure

Authors: E. V. Calman, L. H. Fowler-Gerace, L. V. Butov, D. E. Nikonov, I. A. Young, S. Hu, A. Mischenko, A. K. Geim

Abstract: Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalco… ▽ More Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe$_2$/WSe$_2$ heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, i.e. indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, Thygesen, Nano Lett. 18, 1460 (2018)]. We also report on the realization of IXs with a luminescence linewidth reaching 4~meV at low temperatures. An enhancement of IX luminescence intensity and the narrow linewidth are observed in localized spots. △ Less

Submitted 20 November, 2019; v1 submitted 24 January, 2019; originally announced January 2019.

Inversion Charge-boost and Transient Steep-slope induced by Free charge-polarization Mismatch in a Ferroelectric-metal-oxide-semiconductor Capacitor

Authors: Sou-Chi Chang, Uygar E. Avci, Dmitri E. Nikonov, Ian A. Young

Abstract: In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a significant inversion charge-boost can be achieved by a FE MOS capacitor due to a steep transient subthreshold swing (SS) driven by the free charge-polarization m… ▽ More In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a significant inversion charge-boost can be achieved by a FE MOS capacitor due to a steep transient subthreshold swing (SS) driven by the free charge-polarization mismatch. It is also shown that the observation of steep transient SS significantly depends on the viscosity coefficient under Landau's mean field theory, in general representing the average FE time response associated with domain nucleation and propagation. Therefore, this letter not only establishes a theoretical framework that describes the physical origin behind the inversion charge-boost in a FE MOS capacitor, but also shows that the key feature of depolarization effect on a FE MOS capacitor should be the inversion-charge boost, rather than the steep SS (e.g., sub-60mV/dec at room temperature), which cannot be experimentally observed as the measurement time is much longer than the FE response. Finally, we outlines the required material targets for the FE response in field-effect transistors to be applicable for next-generation high-speed and low-power digital switches. △ Less

Submitted 9 April, 2018; originally announced April 2018.

Comments: 6 figures, 5 pages, submitted to IEEE JxCDC

Skyrmion nucleation via localized spin current injection in confined nanowire geometry in low chirality magnetic materials

Authors: Sourav Dutta, Dmitri E. Nikonov, George Bourianoff, Sasikanth Manipatruni, Ian A. Young, Azad Naeemi

Abstract: Magnetic skyrmions have been the focus of intense research with promising applications in memory, logic and interconnect technology. Several schemes have been recently proposed and demonstrated to nucleate skyrmions. However, they either result in an uncontrolled skyrmion bubble production or are mostly targeted towards integration with racetrack memory device. In this work, we propose a novel sch… ▽ More Magnetic skyrmions have been the focus of intense research with promising applications in memory, logic and interconnect technology. Several schemes have been recently proposed and demonstrated to nucleate skyrmions. However, they either result in an uncontrolled skyrmion bubble production or are mostly targeted towards integration with racetrack memory device. In this work, we propose a novel scheme for a controlled single skyrmion nucleation in a confined nanowire geometry with sub-100 nm width using a generalized approach of "localized spin current injection" technique in material systems exhibiting low Dzyaloshinskii-Moriya interaction (DMI). Our proposed nucleation mechanism follows a pathway involving the creation of a reversed magnetic domain containing one or more pairs of vertical Bloch lines (VBLs) that form an edge-to-edge domain wall as the VBLs get annihilated at the edge of the nanowire. However, pinning of the edge domain walls within a narrow gap using notches or anti-notches results in the creation of a magnetic bubble with defect-free domain wall that eventually relaxes into a circular skyrmion structure. Our simulations predict that the proposed mechanism allows skyrmion nucleation on sub-nanosecond timescale, shows robustness to variations like local pinning sites and is applicable for any skyrmion-based logic, memory and interconnect application. △ Less

Submitted 31 January, 2018; originally announced January 2018.

Voltage Control of Uni-directional Anisotropy in Ferromagnet-Multiferroic System

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Chia-Ching Lin, Prasad Bhagwati, Yen Lin Huang, Anoop R. Damodaran, Zuhuang Chen, Ramamoorthy Ramesh, Ian A. Young

Abstract: Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., ~ 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic… ▽ More Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., ~ 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic (AFM) and FE orders is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as CoFe or LSMO. While previous work has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field, several puzzling issues remain. Perhaps the most intriguing among them is that the BiFeO3-CoFe bilayer did not demonstrate any electrically controlled directional anisotropy, i.e., an exchange bias, which is a potential mechanism for 180o magnetic reversal and is independent of switching kinetics. However, what is needed/preferred for logic and memory is a magneto-electric mechanism that works analogous to an applied field, i.e a uni-directional anisotropy that is voltage modulated. Here, we present the evidence of electrical control of exchange bias of a laterally scaled spin valve that is exchange-coupled to BiFeO3 at room temperature. We show that the exchange bias in this bilayer is thermally robust, electrically controlled and reversible. We anticipate that magneto-electricity at such scaled dimensions provides a powerful pathway for computing beyond the modern nanoelectronics transistors by enabling a new class of non-volatile, ultra-low energy computing elements. △ Less

Submitted 25 January, 2018; originally announced January 2018.

Clocked Magnetostriction-Assisted Spintronic Device Design and Simulation

Authors: Rouhollah Mousavi Iraei, Nickvash Kani, Sourav Dutta, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, John T. Heron, Azad Naeemi

Abstract: We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, n… ▽ More We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, non-volatility, cascadability, and thermal reliability of the original ASL device. Moreover, by utilizing the deterministic switching of a magnet from the saddle point of the energy profile, the device is more efficient in terms of energy and delay and is robust to thermal fluctuations. The results of simulations show that compared to ASL devices, the proposed device achieves 21x shorter delay and 27x lower energy dissipation per bit for a 32-bit arithmetic-logic unit (ALU). △ Less

Submitted 22 November, 2017; originally announced November 2017.

Patterns and Thresholds of Magnetoelectric Switching in Spin Logic Devices

Authors: Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young

Abstract: In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a multi-ferroic (such as BiFeO3) is well suited for 180 degree switching of magnetization. The ME field is determined by the direction of canted magnetization in BiF… ▽ More In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a multi-ferroic (such as BiFeO3) is well suited for 180 degree switching of magnetization. The ME field is determined by the direction of canted magnetization in BiFeO3 which can point at an angle to the plane, to which voltage is applied. Dependence of switching time and the threshold of ME field on its angles was determined by micromagnetic simulations. Switching occurs by formation of a domain wall on the side of the nanomagnet on top of BFO and its propagation to the rest of the magnet. For in-plane magnetization, switching occurs over a wide range of angles and at all magnitudes of ME field above threshold. For out-of-plane magnetization failure occurs (with an exception of a narrow range of angles and magnitudes of ME field) due to the domain wall reflecting from the opposite end of the nanomagnet. △ Less

Submitted 20 September, 2017; originally announced September 2017.

Comments: 7 pages, 5 figures

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

Authors: Sou-Chi Chang, Uygar E. Avci, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young

Abstract: Transient negative differential capacitance (NC), the dynamic reversal of transient capacitance in an electrical circuit is of highly technological and scientific interest since it probes the foundation of ferroelectricity. In this letter, we study a resistor-ferroelectric capacitor (R-FeC) network through a series of coupled equations based on Kirchhoff's law, Electrostatics, and Landau theory. W… ▽ More Transient negative differential capacitance (NC), the dynamic reversal of transient capacitance in an electrical circuit is of highly technological and scientific interest since it probes the foundation of ferroelectricity. In this letter, we study a resistor-ferroelectric capacitor (R-FeC) network through a series of coupled equations based on Kirchhoff's law, Electrostatics, and Landau theory. We show that transient NC in a R-FeC circuit originates from the mismatch between rate of free charge change on the metal plate and that of bound charge change in a ferroelectric (FE) capacitor during polarization switching. This transient charge dynamic mismatch is driven by the negative curvature of the FE free energy landscape. It is also analytically shown that a free energy profile with the negative curvature is the only physical system that can describe transient NC during the two-state switching in a FE capacitor. Furthermore, this transient charge dynamic mismatch is justified by the dependence of external resistance and intrinsic FE viscosity coefficient. The depolarization effect on FE capacitors also shows the importance of negative curvature to transient NC. The relation between transient NC and negative curvature provides a direct insight into the free energy landscape during the FE switching. △ Less

Submitted 11 September, 2017; originally announced September 2017.

Comments: 5 pages, 11 figures

Journal ref: Phys. Rev. Applied 9, 014010 (2018)

A Thermodynamic Perspective of Negative-capacitance Field-effect-transistors

Authors: Sou-Chi Chang, Uygar E. Avci, Dmitri. E. Nikonov, Ian A. Young

Abstract: Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and the polarization dynamics according to Landau-Khalatnikov (LK) equation. These equations are self-consistently solved with the one-dimensional metal-oxide-semicon… ▽ More Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and the polarization dynamics according to Landau-Khalatnikov (LK) equation. These equations are self-consistently solved with the one-dimensional metal-oxide-semiconductor (MOS) structure electrostatics and the drift-diffusion solution for the current in the semiconductor channel. Numerical simulations demonstrate, depending on the ferroelectric (FE) thickness, both regimes of hysteresis switching (relevant for a non-volatile memory) and of higher on-currents and steeper subthreshold slope (SS) with a negligible hysteresis (relevant for logic) via the negative capacitance effect. △ Less

Submitted 16 June, 2017; originally announced June 2017.

Comments: 8 pages, 14 figures

Overcoming thermal noise in non-volatile spin wave logic

Authors: Sourav Dutta, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, Azad Naeemi

Abstract: Spin waves are propagating disturbances in magnetically ordered materials, analogous to lattice waves in solid systems and are often described from a quasiparticle point of view as magnons. The attractive advantages of Joule-heat-free transmission of information, utilization of the phase of the wave as an additional degree of freedom and lower footprint area compared to conventional charge-based d… ▽ More Spin waves are propagating disturbances in magnetically ordered materials, analogous to lattice waves in solid systems and are often described from a quasiparticle point of view as magnons. The attractive advantages of Joule-heat-free transmission of information, utilization of the phase of the wave as an additional degree of freedom and lower footprint area compared to conventional charge-based devices have made spin waves or magnon spintronics a promising candidate for beyond-CMOS wave-based computation. However, any practical realization of an all-magnon based computing system must undergo the essential steps of a careful selection of materials and demonstrate robustness with respect to thermal noise or variability. Here, we aim at identifying suitable materials and theoretically demonstrate the possibility of achieving error-free clocked non-volatile spin wave logic device, even in the presence of thermal noise and clock jitter or clock skew. △ Less

Submitted 12 March, 2017; v1 submitted 9 March, 2017; originally announced March 2017.

Comments: 31 pages including supplementary information

Response to Comment on 'Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic' (arXiv:1607.06690)

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Huichu Liu, Ian A. Young

Abstract: In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it with time-domain circuit simulations using a self-consistent ferroelectric (FE) compact model. While the energy to charge a capacitor is dissipated in the intercon… ▽ More In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it with time-domain circuit simulations using a self-consistent ferroelectric (FE) compact model. While the energy to charge a capacitor is dissipated in the interconnect and transistor resistance, we note that the energy to switch a capacitor and a FE is independent of the interconnect resistance value to the first order. Also device design can mitigate the parasitic energy losses. We further show the circuit simulations for a sub 10 aJ switching operation of a MESO logic device comprehending: a) Energy stored in multiferroic; b) Energy dissipation in the resistance of the interconnect, Ric ; c) Energy dissipation in the inverse spin-orbit coupling (ISOC) spin to charge converter Risoc; d) Supply, ground resistance, and transistor losses. We also identify the requirements for the resistivity of the spin-orbit coupling materials and address the effect of internal resistance of the spin to charge conversion layer. We provide the material parameter space where MESO (with a fan-out of 1 and interconnect) achieves sub 10 aJ switching energy with path for scaling via ferroelectric/magnetoelectric/spin-orbit materials development. △ Less

Submitted 5 March, 2017; originally announced March 2017.

Comments: we address the comments from arXiv:1607.06690 on the energy of MESO logic. The typical ISOC internal resistance should read 10k.Ohm. The technical note is 25 pages, 7 figures

Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

Authors: Sou-Chi Chang, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young, Azad Naeemi

Abstract: A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and inte… ▽ More A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and interconnect is realized by sizing different contact areas at the input and the output as well as enhancing the local dam** mechanism. The proposed logic is suitable for scaling due to a high energy barrier provided by a long FM wire. Compared to the scheme based on non-local spin valves (NLSVs) in the previous proposal, the devices can be operated at lower current density due to utilizing all injected spins for local magnetization reversals, and thus improve both energy efficiency and resistance to electromigration. This device concept is justified by simulating a buffer, an inverter, and a 3-input majority gate with comprehensive numerical simulations, including spin transport through the FM/non-magnetic (NM) interfaces as well as the NM channel and stochastic magnetization dynamics inside FM wires. In addition to digital computing, the proposed framework can also be used as a transducer between DWs and spin currents for higher wiring flexibility in the interconnect network. △ Less

Submitted 20 September, 2016; originally announced September 2016.

Comments: 9 pages

Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions

Authors: Sou-Chi Chang, Azad Naeemi, Dmitri E. Nikonov, Alexei Gruverman

Abstract: In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, measured current-voltage cha… ▽ More In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, measured current-voltage characteristic curves in both inorganic (Co/BaTiO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$) and organic (Au/PVDF/W) ferroelectric tunnel junctions can be well described by the proposed approach. Furthermore, under this theoretical framework, the controversy of opposite TER signs observed experimentally by different groups in Co/BaTiO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ systems is addressed by considering the interface termination effects using the effective contact ratio, defined through the effective screening length and dielectric response at the metal/ferroelectric interfaces. Finally, our approach is extended to investigate the role of a CoO$_{x}$ buffer layer at the Co/BaTiO$_{3}$ interface in a ferroelectric tunnel memristor. It is shown that, to have a significant memristor behavior, not only the interface oxygen vacancies but also the CoO$_{x}$ layer thickness may vary with the applied bias. △ Less

Submitted 9 September, 2016; originally announced September 2016.

Comments: 12 pages

Journal ref: Phys. Rev. Applied 7, 024005 (2017)

Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Ramamoorthy Ramesh, Huichu Li, Ian A. Young

Abstract: As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technolo… ▽ More As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technology has remained elusive. Here, we propose a scalable spintronic logic device which operates via spin-orbit transduction combined with magneto-electric switching. The proposed Magneto-Electric Spin Orbit (MESO) logic enables a new paradigm to continue scaling of logic performance to near thermodynamic limits for GHz logic (100 kT switching energy at 100 ps delay). The proposed MESO devices scale strongly and favorably with critical dimensions of the device, showing a cubic dependence of switching energy on size, (E_m proportional to W^3), and square dependence on voltage (E_m proportional to V^2). The excellent scaling is obtained thanks to the properties of the spin orbit effects (e.g. Inverse Spin Hall Effect (ISHE) and Inverse Rashba-Edelstein Effect (IREE)) and the dependence of capacitance on size. The operating voltages for these devices are predicted to be < 100 mV allowing a significant jump ahead of historic trends of scaling voltage with size and corresponding reduction of energy. Interconnect resistance is a critical obstacle for scaling beyond 10 nm dimensions. We project a less detrimental impact of interconnect resistance and show that MESO logic is amenable for highly resistive interconnects (100 uOhm.cm-1 mOhm.cm) which opens a possibility to use nano-metallic (width < bulk electron mean free path) or doped semiconducting wires (width<5 nm). A scalable, CMOS compatible, non-volatile logic family proposed here may enable the next multi-generational scaling of computing devices. △ Less

Submitted 5 March, 2017; v1 submitted 16 December, 2015; originally announced December 2015.

Comments: (60 pages, including supplementary) Updated Figure 3B. Contains expanded energy calculations, effect of SOC resistivity, supported with device simulations in supplementary Sections F,G

Magnonic Holographic Memory: from Proposal to Device

Authors: F. Gertz, A. Kozhevnikov, Y. Filimonov, D. E. Nikonov, A. Khitun

Abstract: In this work, we present recent developments in magnonic holographic memory devices exploiting spin waves for information transfer. The devices comprise a magnetic matrix and spin wave generating/detecting elements placed on the edges of the waveguides. The matrix consists of a grid of magnetic waveguides connected via cross junctions. Magnetic memory elements are incorporated within the junction… ▽ More In this work, we present recent developments in magnonic holographic memory devices exploiting spin waves for information transfer. The devices comprise a magnetic matrix and spin wave generating/detecting elements placed on the edges of the waveguides. The matrix consists of a grid of magnetic waveguides connected via cross junctions. Magnetic memory elements are incorporated within the junction while the read-in and read-out is accomplished by the spin waves propagating through the waveguides. We present experimental data on spin wave propagation through NiFe and YIG magnetic crosses. The obtained experimental data show prominent spin wave signal modulation (up to 20 dB for NiFe and 35 dB for YIG) by the external magnetic field, where both the strength and the direction of the magnetic field define the transport between the cross arms. We also present experimental data on the 2-bit magnonic holographic memory built on the double cross YIG structure with micro-magnets placed on the top of each cross. It appears possible to recognize the state of each magnet via the interference pattern produced by the spin waves with all experiments done at room temperature. Magnonic holographic devices aim to combine the advantages of magnetic data storage with wave-based information transfer. We present estimates on the spin wave holographic devices performance, including power consumption and functional throughput. According to the estimates, magnonic holographic devices may provide data processing rates higher than 10^18 bits/cm2/s while consuming 0.15uW. Technological challenges and fundamental physical limits of this approach are also discussed. △ Less

Submitted 12 November, 2014; originally announced November 2014.

Experimental Demonstration of the Co-existence of the Spin Hall and Rashba Effects in beta-Tantalum/Ferromagnet Bilayers

Authors: Gary Allen, Sasikanth Manipatruni, Dmitri E. Nikonov, Mark Doczy, Ian A. Young

Abstract: We have measured the spin torques of beta-Tantalum / Co20Fe60B20 bilayers versus Ta thickness at room temperature using an FMR technique. The spin Hall coefficient was calculated both from the observed change in dam** coefficient of the ferromagnet with Ta thickness, and from the ratio of the symmetric and anti-symmetric components of the FMR signal. Results from these two methods yielded values… ▽ More We have measured the spin torques of beta-Tantalum / Co20Fe60B20 bilayers versus Ta thickness at room temperature using an FMR technique. The spin Hall coefficient was calculated both from the observed change in dam** coefficient of the ferromagnet with Ta thickness, and from the ratio of the symmetric and anti-symmetric components of the FMR signal. Results from these two methods yielded values for the spin Hall coefficient of -0.090+/-0.005 and -0.11+/-0.01, respectively. We have also identified a significant out-of-plane spin torque originating from Ta, which is constant with Ta thickness. We ascribe this to an interface spin orbit coupling, or Rashba effect, due to the strength and constancy of the torque with Ta thickness. From fitting measured data to a model including interface spin orbit coupling, we have determined the spin diffusion length for beta-Tantalum to be ~2.5 nm. △ Less

Submitted 3 November, 2014; originally announced November 2014.

Comments: 18 pages, 10 figures, 1 table, submitted to Science

Convolutional Networks for Image Processing by Coupled Oscillator Arrays

Authors: Dmitri E. Nikonov, Ian A. Young, George I. Bourianoff

Abstract: A coupled oscillator array is shown to approximate convolutions with Gabor filters for image processing tasks. Pixelated image fragments and filter functions are converted to voltages, differenced, and input into a corresponding array of weakly coupled Voltage Controlled Oscillators (VCOs). This is referred to as Frequency Shift Keying (FSK). Upon synchronization of the array, the common node ampl… ▽ More A coupled oscillator array is shown to approximate convolutions with Gabor filters for image processing tasks. Pixelated image fragments and filter functions are converted to voltages, differenced, and input into a corresponding array of weakly coupled Voltage Controlled Oscillators (VCOs). This is referred to as Frequency Shift Keying (FSK). Upon synchronization of the array, the common node amplitude provides a metric for the degree of match between the image fragment and the filter function. The optimal oscillator parameters for synchronization are determined and favor a moderate value of the Q-factor. △ Less

Submitted 15 September, 2014; originally announced September 2014.

Comments: 23 pages, 12 figures

Automotion of Domain Walls for Spintronic Interconnects

Authors: Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young

Abstract: We simulate automotion, the spontaneous transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate with only a transient current pulse and provide favorable scaling down to the 20nm scale. Cases of both in-plane and perp… ▽ More We simulate automotion, the spontaneous transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate with only a transient current pulse and provide favorable scaling down to the 20nm scale. Cases of both in-plane and perpendicular magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, disappearance, and reflection of domain walls are demonstrated. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects. △ Less

Submitted 14 November, 2013; originally announced November 2013.

Comments: 9 figures, 25 pages

Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices

Authors: Angik Sarkar, Dmitri E. Nikonov, Ian A. Young, Behtash Behin-Aein, Supriyo Datta

Abstract: Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy a… ▽ More Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy and time. Application of this approach to a wide class of charge-based and non-charge based devices is discussed. The approach suggests pathways for improving the performance of beyond-CMOS devices and a new realistic limit for energy-delay product in terms of the Planks constant. △ Less

Submitted 21 August, 2013; originally announced August 2013.

Comments: 7 pages 2 figures. Submitted to IEEE Transactions on Nanotechnology

Coupled-Oscillator Associative Memory Array Operation

Authors: Dmitri E. Nikonov, Gyorgy Csaba, Wolfgang Porod, Tadashi Shibata, Danny Voils, Dan Hammerstrom, Ian A. Young, George I. Bourianoff

Abstract: Operation of the array of coupled oscillators underlying the associative memory function is demonstrated for various interconnection schemes (cross-connect, star phase keying and star frequency keying) and various physical implementation of oscillators (van der Pol, phase-locked loop, spin torque). The speed of synchronization of oscillators and the evolution of the degree of matching is studied a… ▽ More Operation of the array of coupled oscillators underlying the associative memory function is demonstrated for various interconnection schemes (cross-connect, star phase keying and star frequency keying) and various physical implementation of oscillators (van der Pol, phase-locked loop, spin torque). The speed of synchronization of oscillators and the evolution of the degree of matching is studied as a function of device parameters. The dependence of errors in association on the number of the memorized patterns and the distance between the test and the memorized pattern is determined for Palm, Furber and Hopfield association algorithms. △ Less

Submitted 22 April, 2013; originally announced April 2013.

Comments: 32 pages, 20 figures

Overview of Beyond-CMOS Devices and A Uniform Methodology for Their Benchmarking

Authors: Dmitri E. Nikonov, Ian A. Young

Abstract: Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described. Theories used for benchmarking these devices are overviewed, and a general methodology is described for consistent estimates of the circuit area, switching t… ▽ More Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described. Theories used for benchmarking these devices are overviewed, and a general methodology is described for consistent estimates of the circuit area, switching time and energy. The results of the comparison of the NRI logic devices using these benchmarks are presented. △ Less

Submitted 1 February, 2013; originally announced February 2013.

Comments: 91 pages, 67 figures, 11 tables. Related to the conference presentation D. Nikonov and I. Young, Uniform Methodology for Benchmarking Beyond-CMOS Logic Devices, Proceedings of IEDM, 25.4 (2012)

Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young

Abstract: In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enable better energy- delay and voltage performance than traditional MTJ based spin torque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derive the effect of dimensional scaling on spin injection efficiency, voltage-delay and energy-delay of spin torque switching using MTJs and GSHE and identify the optimum elect… ▽ More In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enable better energy- delay and voltage performance than traditional MTJ based spin torque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derive the effect of dimensional scaling on spin injection efficiency, voltage-delay and energy-delay of spin torque switching using MTJs and GSHE and identify the optimum electrode geometry for low operating voltage (<0.1 V), high speed (>10 GHz) operation. We show that effective spin injection efficiency >100 % can be obtained using optimum spin hall electrode thickness for 30 nm nanomagnet widths. Finally, we derive the energy-delay trajectory of GSHE and MTJ devices to calculate the energy-delay product of GSHE and MTJ devices with an energy minimum at the characteristic time of the magnets. Optimized GSHE devices when combined with PMA can enable MRAM with scaled nanomagnets (30 nm X 60 nm), ultra-low voltage operation (< 0.1 V), fast switching times (10 ps) and switching energy as low as 100 aJ/bit. △ Less

Submitted 22 January, 2013; originally announced January 2013.

Comments: 16 pages, 5 figures

Nanomagnetic Logic and Magnetization Switching Dynamics in Spin Torque Majority Gates

Authors: Dmitri E. Nikonov, George I. Bourianoff, Tahir Ghani, Ian A. Young

Abstract: Spin torque majority gates are modeled and several regimes of magnetization switching (some leading to failure) are discovered. The switching speed and noise margins are determined for STMGs and an adder based on it. With switching time of 3ns at current of 80uA, the adder computational throughput is comparable to that of a CMOS adder. Spin torque majority gates are modeled and several regimes of magnetization switching (some leading to failure) are discovered. The switching speed and noise margins are determined for STMGs and an adder based on it. With switching time of 3ns at current of 80uA, the adder computational throughput is comparable to that of a CMOS adder. △ Less

Submitted 18 December, 2012; originally announced December 2012.

Comments: 4 pages, 14 figures, IEEE International Magnetic Conference Technical Digest, BT-08 (2012)

Material Targets for Scaling All Spin Logic

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young

Abstract: All-spin logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to non-volatility, ultra-low operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magne… ▽ More All-spin logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to non-volatility, ultra-low operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magnetic materials and interfaces is the key to realizing spin logic devices that can surpass energy-delay performance of CMOS transistors. With validated stochastic nano-magnetic and vector spin transport numerical models, we derive the target material and interface properties for the nanomagnets and channels. We identified promising new directions for material engineering/discovery focusing on systematic scaling of magnetic anisotropy (Hk) with saturation magnetization (Ms), use of perpendicular magnetic anisotropy, and interface spin mixing conductance of ferromagnet/spin channel interface (Gmix). We provide systematic targets for scaling spin logic energy-delay product toward a 2 aJ.ns energy-delay product, comprehending the stochastic noise for nanomagnets. △ Less

Submitted 13 December, 2012; originally announced December 2012.

Comments: 21 pages, 8 figures

ACM Class: B.3; B.6.1; B.7.0; B.7.1; B.7.2; J.2; G.4; I.6.1

Journal ref: Phys. Rev. Applied 5, 014002 (2016)

All Spin Nano-magnetic State Elements

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young

Abstract: We propose an all spin state element to enable all spin state machines using spin currents and nanomagnets. We demonstrate via numerical simulations the operation of a state element a critical building block for synchronous, sequential logic computation. The numerical models encompass Landau-Lifshitz-Gilbert (LLG) nanomagnet dynamics with stochastic models and vector spin-transport in metallic mag… ▽ More We propose an all spin state element to enable all spin state machines using spin currents and nanomagnets. We demonstrate via numerical simulations the operation of a state element a critical building block for synchronous, sequential logic computation. The numerical models encompass Landau-Lifshitz-Gilbert (LLG) nanomagnet dynamics with stochastic models and vector spin-transport in metallic magnetic and non-magnetic channels. Combined with all spin combinatorial logic, the state elements can enable synchronous and asynchronous computing elements. △ Less

Submitted 4 October, 2012; originally announced October 2012.

Comments: 21 pages, 6 figures

ACM Class: B.3; B.6.1; B.7.0; B.7.1; B.7.2; J.2; G.4; I.6.1

Electron-Phonon Scattering in Planar MOSFETs: NEGF and Monte Carlo Methods

Authors: Himadri S. Pal, Dmitri E. Nikonov, Raseong Kim, Mark S. Lundstrom

Abstract: A formalism for incorporating electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is applicable to planar MOSFETs is presented. Restructuring the NEGF equations in terms of approximate summation of transverse momentum modes leads to a rigorous and efficient method of solution. This helps to drastically reduce the computational complexity, allowing treatment of… ▽ More A formalism for incorporating electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is applicable to planar MOSFETs is presented. Restructuring the NEGF equations in terms of approximate summation of transverse momentum modes leads to a rigorous and efficient method of solution. This helps to drastically reduce the computational complexity, allowing treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is systematically benchmarked against Monte Carlo solutions of the classical Boltzmann transport for model potential profiles. Results show a remarkably close agreement between the two methods for variety of channel lengths and bias conditions, both for elastic and inelastic scattering processes. △ Less

Submitted 21 September, 2012; originally announced September 2012.

Comments: 30 pages, 10 figures

Circuit Theory for SPICE of Spintronic Integrated Circuits

Authors: Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young

Abstract: We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics and spin transport. We propose an extension to the Modified Nodal Analysis technique for the analysis of spin circuits based on the recently developed spin con… ▽ More We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics and spin transport. We propose an extension to the Modified Nodal Analysis technique for the analysis of spin circuits based on the recently developed spin conduction matrices. We demonstrate the applicability of the framework using an example spin logic circuit described using spin Netlists. △ Less

Submitted 17 February, 2012; v1 submitted 12 December, 2011; originally announced December 2011.

Comments: 14 pages, 11 figures; added fig. 2; added citations; modified title to emphasize SPICE; Results unchanged

ACM Class: B.3; B.6.1; B.7.0; B.7.1; B.7.2; J.2; G.4; I.6.1

Role of Phonon Scattering in Graphene Nanoribbon Transistors: Non-Equilibrium Green's Function Method with Real Space Approach

Authors: Youngki Yoon, Dmitri E. Nikonov, Sayeef Salahuddin

Abstract: Mode space approach has been used so far in NEGF to treat phonon scattering for computational efficiency. Here we perform a more rigorous quantum transport simulation in real space to consider interband scatterings as well. We show a seamless transition from ballistic to dissipative transport in graphene nanoribbon transistors by varying channel length. We find acoustic phonon (AP) scattering to b… ▽ More Mode space approach has been used so far in NEGF to treat phonon scattering for computational efficiency. Here we perform a more rigorous quantum transport simulation in real space to consider interband scatterings as well. We show a seamless transition from ballistic to dissipative transport in graphene nanoribbon transistors by varying channel length. We find acoustic phonon (AP) scattering to be the dominant scattering mechanism within the relevant range of voltage bias. Optical phonon scattering is significant only when a large gate voltage is applied. In a longer channel device, the contribution of AP scattering to the dc current becomes more significant. △ Less

Submitted 8 April, 2011; originally announced April 2011.

Proposal of a spin torque majority gate logic

Authors: Dmitri E. Nikonov, George I. Bourianoff, Tahir Ghani

Abstract: A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magne… ▽ More A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology. △ Less

Submitted 23 June, 2010; originally announced June 2010.

Comments: 14 pages, 4 figures

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance

Authors: Yunfei Gao, Tony Low, Mark S. Lundstrom, Dmitri E. Nikonov

Abstract: A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel. Account for these factors permits setting more realistic performance limits for the transistor, especial… ▽ More A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel. Account for these factors permits setting more realistic performance limits for the transistor, especially the magnetoresistance, which is found to be lower compared to earlier predictions. The interplay between tunneling and spin relaxation is elucidated by numerical simulation. Insertion of the tunneling barrier leads to an increased magnetoresistance. Numerical simulations are used to explore the tunneling barrier design issues. △ Less

Submitted 26 February, 2010; originally announced February 2010.

Comments: 31 pages, 14 figures, submitted to Journal of Applied Physics

Journal ref: Journal of Applied Physics (Vol.108, Issue 8), 2010

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits

Authors: Yunfei Gao, Siyuranga O. Koswatta, Dmitri E. Nikonov, Mark S. Lundstrom

Abstract: The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we believe will apply to BTBT FETs vs. MOSFETs more generally. We use pz-orbital tight-binding Hamiltonian and the non-equilibrium Green function (NEGF) formalism… ▽ More The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we believe will apply to BTBT FETs vs. MOSFETs more generally. We use pz-orbital tight-binding Hamiltonian and the non-equilibrium Green function (NEGF) formalism for rigorous treatment of dissipative quantum transport. A device level comparison of p-i-n TFETs and n-i-n MOSFETs in both ballistic and dissipative cases has been performed previously. In this paper, the possibility of using p-i-n TFETs in ultra-low power sub-threshold logic circuits is investigated using a rigorous numerical simulator. The results show that, in sub-threshold circuit operation, the p-i-n TFETs have better DC characteristics, and can deliver ~15x higher performance at the iso-P_LEAKAGE, iso-VDD conditions. Because p-i-n TFETs can operate at lower VDD than n-i-n MOSFETs, they can deliver ~3x higher performance at the same power (P_OPERATION). This results in ~3x energy reduction under iso-delay conditions. Therefore the p-i-n TFETs are more suitable for sub-threshold logic operation. △ Less

Submitted 28 January, 2010; originally announced January 2010.

Comments: This work was presented in TECHCON 2009 Austin, TX

Strategies and tolerances of spin transfer torque switching

Authors: Dmitri E. Nikonov, George I. Bourianoff, Graham Rowlands, Ilya N. Krivorotov

Abstract: Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that switching with perpendicularly polarized current by short pulses and free precession requires smaller time and energy than spin torque switching with colline… ▽ More Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that switching with perpendicularly polarized current by short pulses and free precession requires smaller time and energy than spin torque switching with collinear in plane spin polarization; it is also found to be superior to other kinds of memories. We study the tolerances of switching to the magnitude of current and pulse duration. An increased Gilbert dam** is found to improve tolerances of perpendicular switching without increasing the threshold current, unlike in plane switching. △ Less

Submitted 25 January, 2010; originally announced January 2010.

Comments: 40 pages, 16 figures

Magnetoelectric Spin Wave Amplifier for Spin Wave Logic Circuits

Authors: Alexander Khitun, Dmitri E. Nikonov, Kang L. Wang

Abstract: We propose and analyze a spin wave amplifier aimed to enhance the amplitude of the propagating spin wave via the magnetoelectric effect. The amplifier is a two-layer multiferroic structure, which comprises piezoelectric and ferromagnetic materials. By applying electric field to the piezoelectric layer, the stress is produced. In turn, the stress changes the direction of the easy axis in the ferr… ▽ More We propose and analyze a spin wave amplifier aimed to enhance the amplitude of the propagating spin wave via the magnetoelectric effect. The amplifier is a two-layer multiferroic structure, which comprises piezoelectric and ferromagnetic materials. By applying electric field to the piezoelectric layer, the stress is produced. In turn, the stress changes the direction of the easy axis in the ferromagnetic layer and the direction of the anisotropy field. The rotation frequency of the easy axis is the same as the frequency of the spin wave propagating through the ferromagnetic layer. As a result of this two-stage process, the amplitude of the spin wave can be amplified depending on the angle of the easy axis rotation. We present results of numerical simulations illustrating the operation of the proposed amplifier. According to numerical estimates, the amplitude of the spin wave signal can be increased by several orders of magnitude. The energy efficiency of the electric-to-magnetic power conversion is discussed. The proposed amplifier preserves the phase of the initial signal, which is important for application to logic circuits based on spin waves. △ Less

Submitted 30 October, 2008; originally announced October 2008.