Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (CoFeB)x(LiNbO3)100-x nanocomposite
Authors:
M. N. Martyshov,
A. V. Emelyanov,
V. A. Demin,
K. E. Nikiruy,
A. A. Minnekhanov,
S. N. Nikolaev,
A. N. Taldenkov,
A. V. Ovcharov,
M. Yu. Presnyakov,
A. V. Sitnikov,
A. L. Vasiliev,
P. A. Forsh,
A. B. Granovskiy,
P. K. Kashkarov,
M. V. Kovalchuk,
V. V. Rylkov
Abstract:
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogr…
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Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogranules of 3-6 nm in size, contained a large number of dispersed Co (Fe) atoms (up to ~10^22 cm^-3). Measurements were performed both in DC and AC (frequency range 5-13 MHz) regimes. When switching structures from high-resistance (Roff) to low-resistance (Ron) state, the effect of a strong increase in their capacity was found, which reaches 8 times at x $\approx$ 15 at. % and the resistance ratio Roff/Ron $\approx$ 40. The effect is explained by the synergetic combination of the multifilamentary character of resistive switching (RS) and structural features of the samples associated, in particular, with the formation of high-resistance and strongly polarizable LiNbO3 layer near the bottom electrode of the structures. The proposed model is confirmed by investigations of RS of two-layer nanoscale M/NC/LiNbO3/M structures as well as by studies of the magnetization of M/NC/M structures in the pristine state and after RS.
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Submitted 17 August, 2020; v1 submitted 8 December, 2019;
originally announced December 2019.
Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications
Authors:
Anton A. Minnekhanov,
Andrey V. Emelyanov,
Dmitry A. Lapkin,
Kristina E. Nikiruy,
Boris S. Shvetsov,
Alexander A. Nesmelov,
Vladimir V. Rylkov,
Vyacheslav A. Demin,
Victor V. Erokhin
Abstract:
In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by means of the standard gas phase surface polymerization method with different top active metal electrodes (Ag, Al, Cu or Ti of about 500 nm thickness). Th…
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In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by means of the standard gas phase surface polymerization method with different top active metal electrodes (Ag, Al, Cu or Ti of about 500 nm thickness). These organic memristive devices exhibit excellent performance: low switching voltage (down to 1 V), large OFF/ON resistance ratio (about 10^3), retention (> 10^4 s) and high multilevel resistance switching (at least 16 stable resistive states in the case of Cu electrodes). We have experimentally shown that parylene-based memristive elements can be trained by a biologically inspired spike-timing-dependent plasticity (STDP) mechanism. The obtained results have been used to implement a simple neuromorphic network model of classical conditioning. The described advantages allow considering parylene-based organic memristors as prospective devices for hardware realization of spiking artificial neuron networks capable of supervised and unsupervised learning and suitable for biomedical applications.
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Submitted 19 March, 2019; v1 submitted 24 January, 2019;
originally announced January 2019.
