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Metallic behaviour in SOI quantum wells with strong intervalley scattering
Authors:
V. T. Renard,
I. Duchemin,
Y. Niida,
A. Fujiwara,
Y. Hirayama,
K. Takashina
Abstract:
The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial "metallic behaviour" in…
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The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial "metallic behaviour" in two dimensions. However, while it has been recently demonstrated that lifting valley degeneracy can destroy the metallic behaviour, little is known about the role of intervalley scattering. Here, we show that the metallic behaviour can be observed in the presence of strong interval-ley scattering in silicon on insulator (SOI) quantum wells. Analysis of the conductivity in terms of quantum corrections reveals that interactions are much stronger in SOI than in conventional MOSFETs, leading to the metallic behaviour despite the strong intervalley scattering. The prospect of manipulating the valley degree of freedom in materials like AlAs, 1 silicon 2--4 graphene,
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Submitted 27 August, 2015;
originally announced August 2015.
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Valley polarization assisted spin polarization in two dimensions
Authors:
V. T. Renard,
B. A. Piot,
X. Waintal,
G. Fleury,
D. Cooper,
Y. Niida,
D. Tregurtha,
A. Fujiwara,
Y. Hirayama,
K. Takashina
Abstract:
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons' spin alignment in a magnetic field in silico…
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Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons' spin alignment in a magnetic field in silicon-on-insulator quantum wells under valley polarisation. In stark contrast to expectations from a non-interacting model, we show experimentally that less magnetic field can be required to fully spin polarise a valley-polarised system than a valley-degenerate one. Furthermore, we show that these observations are quantitatively described by parameter free ab initio quantum Monte Carlo simulations. We interpret the results as a manifestation of the greater stability of the spin and valley degenerate system against ferromagnetic instability and Wigner crystalisation which in turn suggests the existence of a new strongly correlated electron liquid at low electron densities.
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Submitted 5 June, 2015;
originally announced June 2015.
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Equilibrium Points of an AND-OR Tree: under Constraints on Probability
Authors:
Toshio Suzuki,
Yoshinao Niida
Abstract:
We study a probability distribution d on the truth assignments to a uniform binary AND-OR tree. Liu and Tanaka [2007, Inform. Process. Lett.] showed the following: If d achieves the equilibrium among independent distributions (ID) then d is an independent identical distribution (IID). We show a stronger form of the above result. Given a real number r such that 0 < r < 1, we consider a constraint t…
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We study a probability distribution d on the truth assignments to a uniform binary AND-OR tree. Liu and Tanaka [2007, Inform. Process. Lett.] showed the following: If d achieves the equilibrium among independent distributions (ID) then d is an independent identical distribution (IID). We show a stronger form of the above result. Given a real number r such that 0 < r < 1, we consider a constraint that the probability of the root node having the value 0 is r. Our main result is the following: When we restrict ourselves to IDs satisfying this constraint, the above result of Liu and Tanaka still holds. The proof employs clever tricks of induction. In particular, we show two fundamental relationships between expected cost and probability in an IID on an OR-AND tree: (1) The ratio of the cost to the probability (of the root having the value 0) is a decreasing function of the probability x of the leaf. (2) The ratio of derivative of the cost to the derivative of the probability is a decreasing function of x, too.
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Submitted 4 March, 2015; v1 submitted 31 January, 2014;
originally announced January 2014.
