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Triplet-sensitization by lead halide perovskite thin films for near-infrared-to-visible upconversion
Authors:
Lea Nienhaus,
Juan-Pablo Correa-Baena,
Sarah Wieghold,
Markus Einzinger,
Ting-An Lin,
Katherine E. Shulenberger,
Nathan D. Klein,
Mengfei Wu,
Vladimir Bulovic,
Tonio Buonassisi,
Marc A. Baldo,
Moungi G. Bawendi
Abstract:
Lead halide-based perovskite thin films have attracted great attention due to the explosive increase in perovskite solar cell efficiencies. The same optoelectronic properties that make perovskites ideal absorber materials in solar cells are also beneficial in other light-harvesting applications and make them prime candidates as triplet sensitizers in upconversion via triplet-triplet annihilation i…
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Lead halide-based perovskite thin films have attracted great attention due to the explosive increase in perovskite solar cell efficiencies. The same optoelectronic properties that make perovskites ideal absorber materials in solar cells are also beneficial in other light-harvesting applications and make them prime candidates as triplet sensitizers in upconversion via triplet-triplet annihilation in rubrene. In this contribution, we take advantage of long carrier lifetimes and carrier diffusion lengths in perovskite thin films, their high absorption cross sections throughout the visible spectrum, as well as the strong spin-orbit coupling owing to the abundance of heavy atoms to sensitize the upconverter rubrene. Employing bulk perovskite thin films as the absorber layer and spin-mixer in inorganic/organic heterojunction upconversion devices allows us to forego the additional tunneling barrier owing from the passivating ligands required for colloidal sensitizers. Our bilayer device exhibits an upconversion efficiency in excess of 3% under 785 nm illumination.
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Submitted 15 February, 2019;
originally announced February 2019.
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Trap states impact photon upconversion in rubrene sensitized by lead halide perovskite thin films
Authors:
Sarah Wieghold,
Alexander S. Bieber,
Zachary A. VanOrman,
Juan-Pablo Correa-Baena,
Lea Nienhaus
Abstract:
The same optical and electronic properties that make perovskite thin films ideal absorber materials in photovoltaic applications are also beneficial in photon upconversion devices. In this contribution, we investigate the rubrene-triplet sensitization by perovskite thin films based on methylammonium formamidinium lead triiodide (MAFA). To elucidate the role of trap states which affect the free car…
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The same optical and electronic properties that make perovskite thin films ideal absorber materials in photovoltaic applications are also beneficial in photon upconversion devices. In this contribution, we investigate the rubrene-triplet sensitization by perovskite thin films based on methylammonium formamidinium lead triiodide (MAFA). To elucidate the role of trap states which affect the free carrier lifetimes, we fabricate MAFA perovskite thin films with three different thicknesses. By measuring the change in the photoluminescence properties under different excitation fluences, we find that the prevalent recombination mechanism shifts from monomolecular for thinner films to bimolecular recombination for thicker MAFA films, indicating a reduction in shallow trap-assisted recombination. The addition of rubrene shows a passivating effect on the MAFA surface, but adds an additional quenching pathway due to charge transfer to the triplet state of rubrene. We observe that the threshold for efficient triplet-triplet annihilation shifts to lower incident powers with increasing MAFA thickness, which suggests that the charge transfer to the triplet state competes with non-radiative trap filling. Hence, injection of free electrons and holes into the upconverting organic semiconductor can provide a new avenue for sensitization of rubrene, and may allow us to move away from the necessity of efficient excitonic singlet-to-triplet converters.
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Submitted 4 February, 2019;
originally announced February 2019.
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Homogenization of Halide Distribution and Carrier Dynamics in Alloyed Organic-Inorganic Perovskites
Authors:
Juan-Pablo Correa-Baena,
Yanqi Luo,
Thomas M. Brenner,
Jordan Snaider,
Shi**g Sun,
Xueying Li,
Mallory A. Jensen,
Lea Nienhaus,
Sarah Wieghold,
Jeremy R. Poindexter,
Shen Wang,
Ying Shirley Meng,
Ti Wang,
Barry Lai,
Moungi G. Bawendi,
Libai Huang,
David P. Fenning,
Tonio Buonassisi
Abstract:
Perovskite solar cells have shown remarkable efficiencies beyond 22%, through organic and inorganic cation alloying. However, the role of alkali-metal cations is not well-understood. By using synchrotron-based nano-X-ray fluorescence and complementary measurements, we show that when adding RbI and/or CsI the halide distribution becomes homogenous. This homogenization translates into long-lived cha…
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Perovskite solar cells have shown remarkable efficiencies beyond 22%, through organic and inorganic cation alloying. However, the role of alkali-metal cations is not well-understood. By using synchrotron-based nano-X-ray fluorescence and complementary measurements, we show that when adding RbI and/or CsI the halide distribution becomes homogenous. This homogenization translates into long-lived charge carrier decays, spatially homogenous carrier dynamics visualized by ultrafast microscopy, as well as improved photovoltaic device performance. We find that Rb and K phase-segregate in highly concentrated aggregates. Synchrotron-based X-ray-beam-induced current and electron-beam-induced current of solar cells show that Rb clusters do not contribute to the current and are recombination active. Our findings bring light to the beneficial effects of alkali metal halides in perovskites, and point at areas of weakness in the elemental composition of these complex perovskites, paving the way to improved performance in this rapidly growing family of materials for solar cell applications.
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Submitted 29 April, 2018; v1 submitted 23 April, 2018;
originally announced April 2018.
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Morphology of passivating organic ligands around a nanocrystal
Authors:
Nadav Geva,
James J. Shepherd,
Lea Nienhaus,
Moungi G. Bawendi,
Troy Van Voorhis
Abstract:
Semiconductor nanocrystals are a promising class of materials for a variety of novel optoelectronic devices, since many of their properties, such as the electronic gap and conductivity, can be controlled. Much of this control is achieved via the organic ligand shell, through control of the size of the nanocrystal and the distance to other objects. We here simulate ligand-coated CdSe nanocrystals u…
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Semiconductor nanocrystals are a promising class of materials for a variety of novel optoelectronic devices, since many of their properties, such as the electronic gap and conductivity, can be controlled. Much of this control is achieved via the organic ligand shell, through control of the size of the nanocrystal and the distance to other objects. We here simulate ligand-coated CdSe nanocrystals using atomistic molecular dynamics, allowing for the resolution of novel structural details about the ligand shell. We show that the ligands on the surface can lie flat to form a highly anisotropic 'wet hair' layer as opposed to the 'spiky ball' appearance typically considered. We discuss how this can give rise to a dot-to-dot packing distance of one ligand length since the thickness of the ligand shell is reduced to approximately one-half of the ligand length for the system sizes considered here; these distances imply that energy and charge transfer rates between dots and nearby objects will be enhanced due to the thinner than expected ligand shell. Our model predicts a non-linear scaling of ligand shell thickness as the ligands transition from 'spiky' to 'wet hair'. We verify this scaling using TEM on a PbS nanoarray, confirming that this theory gives a qualitatively correct picture of the ligand shell thickness of colloidal quantum dots.
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Submitted 2 June, 2017;
originally announced June 2017.
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Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane
Authors:
Justin C. Koepke,
Joshua D. Wood,
Enrique A. Carrion,
Scott W. Schmucker,
Yaofeng Chen,
Jayan Hewaparakrama,
Aniruddh Rangarajan,
Isha Datye,
Rushabh Mehta,
Ximeng Liu,
Noel N. Chang,
Lea Nienhaus,
Richard T. Haasch,
Martin Gruebele,
Gregory S. Girolami,
Eric Pop,
Joseph W. Lyding
Abstract:
We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure ($P_{TOT}$). Films grown at $P_{TOT}$ less than 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger $P_{TOT}$, with constant precurs…
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We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure ($P_{TOT}$). Films grown at $P_{TOT}$ less than 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger $P_{TOT}$, with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and $sp^3$ bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the $H_3N-BH_3$ precursor from a passivated Cu catalyst. A similar increase in h-BN growth rate and amorphization is observed even at low $P_{TOT}$ if the $H_3N-BH_3$ partial pressure is initially greater than the background pressure $P_{TOT}$ at the beginning of growth. h-BN growth using the $H_3N-BH_3$ precursor reproducibly can give large-area, crystalline h-BN thin films, provided that the total pressure is under 2.0 Torr and the precursor flux is well-controlled.
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Submitted 22 May, 2016;
originally announced May 2016.
