Precise characterization of a silicon carbide waveguide fiber interface
Authors:
Marcel Krumrein,
Raphael Nold,
Flavie Davidson-Marquis,
Arthur Bourama,
Lukas Niechziol,
Timo Steidl,
Ruoming Peng,
Jonathan Körber,
Rainer Stöhr,
Nils Gross,
Jurgen Smet,
Jawad Ul-Hassan,
Péter Udvarhelyi,
Adam Gali,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of photons to a well defined waveguide mode can significantly enhance the photon detection efficiency. In addition, interfacing this waveguide to a classical fiber n…
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Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of photons to a well defined waveguide mode can significantly enhance the photon detection efficiency. In addition, interfacing this waveguide to a classical fiber network is of similar importance to detect the photons and perform experiments. Here, we show a waveguide fiber interface in SiC. By careful measurements we determine efficiencies exceeding 93 % for the transfer of photons from SiC nanobeams to fibers. We use this interface to create a bright single photon source based on waveguide integrated V2 defects in 4H-SiC and achieve an overall photon count rate of 181 kilo-counts per second. We observe and quantify the strain induced shift of the ground state spin states and demonstrate coherent control of the electron spin with a coherence time of T2=42.5 $\rmμ$s.
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Submitted 2 May, 2024; v1 submitted 11 January, 2024;
originally announced January 2024.
