Showing 1–22 of 22 results for author: Nicoll, C A

High-contrast Aharonov-Bohm oscillations in the acoustoelectric transport regime

Authors: E. Strambini, E. Ligarò, F. Beltram, H. Beere, C. A. Nicoll, D. A. Ritchie, V. Piazza

Abstract: Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight… ▽ More Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight a close analogy between acoustoelectric transport and thermoelectric properties in ballistic devices. △ Less

Submitted 5 September, 2013; originally announced September 2013.

Electric-field-induced coherent coupling of the exciton states in a single quantum dot

Authors: A. J. Bennett, M. A. Pooley, R. M. Stevenson, M. B. Ward, R. B. Patel, A. Boyer de la Giroday, N. Sköld, I. Farrer, C. A. Nicoll, D. A. Ritchie, A. J. Shields

Abstract: The signature of coherent coupling between two quantum states is an anticrossing in their energies as one is swept through the other. In single semiconductor quantum dots containing an electron-hole pair the eigenstates form a two-level system that can be used to demonstrate quantum effects in the solid state, but in all previous work these states were independent. Here we describe a technique to… ▽ More The signature of coherent coupling between two quantum states is an anticrossing in their energies as one is swept through the other. In single semiconductor quantum dots containing an electron-hole pair the eigenstates form a two-level system that can be used to demonstrate quantum effects in the solid state, but in all previous work these states were independent. Here we describe a technique to control the energetic splitting of these states using a vertical electric field, facilitating the observation of coherent coupling between them. Near the minimum splitting the eigenstates rotate in the plane of the sample, being orientated at 45° when the splitting is smallest. Using this system we show direct control over the exciton states in one quantum dot, leading to the generation of entangled photon pairs. △ Less

Submitted 27 March, 2012; originally announced March 2012.

Journal ref: Nature Physics 6, 947-950 (2010)

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Authors: K. Das Gupta, A. F. Croxall, W. Y. Mak, H. E. Beere, C. A. Nicoll, I. Farrer, F. Sfigakis, D. A. Ritchie

Abstract: Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped… ▽ More Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hop** or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities. △ Less

Submitted 18 November, 2011; originally announced November 2011.

Comments: 4 pages, 3 eps figures

Lasing in planar semiconductor diodes

Authors: Giorgio De Simoni, Lukas Mahler, Vincenzo Piazza, Alessandro Tredicucci, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, Fabio Beltram

Abstract: We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. △ Less

Submitted 7 November, 2011; originally announced November 2011.

Anti-bunched photons from a lateral light-emitting diode

Authors: Tommaso Lunghi, Giorgio De Simoni, Vincenzo Piazza, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, Fabio Beltram

Abstract: We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we bel… ▽ More We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we believe our devices are an appealing substitute for highly-attenuated lasers in existing quantum-key-distribution systems. Our devices outperform strongly-attenuated lasers in terms of multi-photon emission events and can therefore lead to a significant security improvement in existing quantum key distribution systems. △ Less

Submitted 22 September, 2011; originally announced September 2011.

Coherent entangled light generated by quantum dots in the presence of nuclear magnetic fields

Authors: R. M. Stevenson, C. L. Salter, A. Boyer de la Giroday, I. A. Farrer, C. A. Nicoll, D. A. Ritchie, A. J. Shields

Abstract: A practical source of high fidelity entangled photons is desirable for quantum information applications and exploring quantum physics. Semiconductor quantum dots have recently been shown to conveniently emit entangled light when driven electrically, however the fidelity was not optimal. Here we show that the fidelity is not limited by decoherence, but by coherent interaction with nuclei. Furthermo… ▽ More A practical source of high fidelity entangled photons is desirable for quantum information applications and exploring quantum physics. Semiconductor quantum dots have recently been shown to conveniently emit entangled light when driven electrically, however the fidelity was not optimal. Here we show that the fidelity is not limited by decoherence, but by coherent interaction with nuclei. Furthermore we predict that on 100μs timescales, strongly enhanced fidelities could be achieved. This insight could allow tailoring of quantum logic to operate using quantum dots in the fault tolerant regime. △ Less

Submitted 15 March, 2011; originally announced March 2011.

Giant Stark effect in the emission of single semiconductor quantum dots

Authors: Anthony. J. Bennett, Raj. B. Patel, Joanna Skiba-Szymanska, Christine A. Nicoll, Ian Farrer, David A. Ritchie, Andrew J. Shields

Abstract: We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions… ▽ More We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy. △ Less

Submitted 10 November, 2010; originally announced November 2010.

Journal ref: Applied Physics Letters, 97, 031104 (2010)

Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

Authors: S. J. Wright, A. L. Thorn, M. D. Blumenthal, S. P. Giblin, M. Pepper, T. J. B. M. Janssen, M. Kataoka, J. D. Fletcher, G. A. C. Jones, C. A. Nicoll, Godfrey Gumbs, D. A. Ritchie

Abstract: We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local diso… ▽ More We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 5 pages, 4 figures, submitted to J. Appl. Phys. as an invited paper for ICPS-30, 25th-30th July, Seoul, SK

Journal ref: J. Appl. Phys. 109, 102422 (2011)

Interference of dissimilar photon sources

Authors: A. J. Bennett, R. B. Patel, C. A. Nicoll, D. A. Ritchie, A. J. Shields

Abstract: If identical photons meet at a semi-transparent mirror they appear to leave in the same direction, an effect called "two-photon interference". It has been known for some time that this effect should occur for photons generated by dissimilar sources with no common history, provided the easurement cannot distinguish between the photons. Here we report a technique to observe such interference with is… ▽ More If identical photons meet at a semi-transparent mirror they appear to leave in the same direction, an effect called "two-photon interference". It has been known for some time that this effect should occur for photons generated by dissimilar sources with no common history, provided the easurement cannot distinguish between the photons. Here we report a technique to observe such interference with isolated, unsynchronized sources whose coherence times differ by several orders of magnitude. In an experiment we interfere photons generated via different physical processes, with different photon statistics. One source is stimulated emission from a tuneable laser, which has Poissonian statistics and a nano-eV bandwidth. The other is spontaneous emission from a quantum dot in a p-i-n diode with a micro-eV linewidth. We develop a theory to explain the visibility of interference, which is primarily limited by the timing resolution of our detectors. △ Less

Submitted 4 June, 2010; originally announced June 2010.

Journal ref: Published as A. J. Bennett et al, Nature Physics 5, 715 - 717 (2009)

Accurate high speed single-electron quantum dot preparation

Authors: S. P. Giblin, S. J. Wright, J. Fletcher, M. Kataoka, M. Pepper, T. J. B. M. Janssen, D. A. Ritchie, C. A. Nicoll, D. Anderson, G. A. C. Jones

Abstract: Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, tho… ▽ More Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pum** cycle. △ Less

Submitted 5 May, 2010; v1 submitted 30 March, 2010; originally announced March 2010.

Comments: 12 pages, 3 figures

Journal ref: New J.Phys.12:073013,2010

Tunable Indistinguishable Photons From Remote Quantum Dots

Authors: R. B. Patel, A. J. Bennett, I. Farrer, C. A. Nicoll, D. A. Ritchie, A. J. Shields

Abstract: Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the magnitude of field that can be applied to tens of kVcm^-1, before carriers tunnel out of the dot. The Stark shift experienced by the emission line is typically 1 meV… ▽ More Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the magnitude of field that can be applied to tens of kVcm^-1, before carriers tunnel out of the dot. The Stark shift experienced by the emission line is typically 1 meV. We report that by embedding the quantum dots in a quantum well heterostructure the vertical field that can be applied is increased by over an order of magnitude whilst preserving the narrow linewidths, high internal quantum efficiencies and familiar emission spectra. Individual dots can then be continuously tuned to the same energy allowing for two-photon interference between remote, independent, quantum dots. △ Less

Submitted 20 November, 2009; originally announced November 2009.

Journal ref: Two-photon interference of the emission from electrically tunable remote quantum dots, Nature Photonics 4, 632-635 (11 July 2010)

Parallel quantized charge pum**

Authors: S. J. Wright, M. D. Blumenthal, M. Pepper, D. Anderson, G. A. C. Jones, C. A. Nicoll, D. A. Ritchie

Abstract: Two quantized charge pumps are operated in parallel. The total current generated is shown to be far more accurate than the current produced with just one pump operating at a higher frequency. With the application of a perpendicular magnetic field the accuracy of quantization is shown to be $< $20 ppm for a current of $108.9 $pA. The scheme for parallel pum** presented in this work has applicat… ▽ More Two quantized charge pumps are operated in parallel. The total current generated is shown to be far more accurate than the current produced with just one pump operating at a higher frequency. With the application of a perpendicular magnetic field the accuracy of quantization is shown to be $< $20 ppm for a current of $108.9 $pA. The scheme for parallel pum** presented in this work has applications in quantum information processing, the generation of single photons in pairs and bunches, neural networking and the development of a quantum standard for electrical current. All these applications will benefit greatly from the increase in output current without the characteristic decrease in accuracy as a result of high-frequency operation. △ Less

Submitted 17 September, 2009; v1 submitted 29 June, 2009; originally announced June 2009.

Journal ref: Phys. Rev. B 80, 113303 (2009)

Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, H. E. Beere, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime,… ▽ More We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime, even in layers with $k_{F}l>500$, thus making conventional mechanisms of localisation due to disorder improbable. We suggest that this insulating state may be due to a charge density wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjölander approximation based calculations of L. Liu {\it et al} [{\em Phys. Rev. B}, {\bf 53}, 7923 (1996)]. Our results are also in qualitative agreement with recent Path-Integral-Monte-Carlo simulations of a two component plasma in the low temperature regime [ P. Ludwig {\it et al}. {\em Contrib. Plasma Physics} {\bf 47}, No. 4-5, 335 (2007)] △ Less

Submitted 27 October, 2009; v1 submitted 17 December, 2008; originally announced December 2008.

Comments: 5 pages + 3 EPS figures (replaced with published version)

Journal ref: PRB 80, 125323 (2009)

Enhanced current quantization in high frequency electron pumps in a perpendicular magnetic field

Authors: S. J. Wright, M. D. Blumenthal, Godfrey Gumbs, A. L. Thorn, M. Pepper, T. J. B. M. Janssen, S. N. Holmes, D. Anderson, G. A. C. Jones, C. A. Nicoll, D. A. Ritchie

Abstract: We present experimental results of high frequency quantized charge pum** through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plat… ▽ More We present experimental results of high frequency quantized charge pum** through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field. △ Less

Submitted 27 November, 2008; v1 submitted 4 November, 2008; originally announced November 2008.

Comments: 4 pages, 4 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 78, 233311 (2008)

Anomalous Coulomb drag in electron-hole bilayers

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, M. Thangaraj, H. E. Beere, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measure… ▽ More We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer shows an upturn, which may be followed by a downturn. Second, the effect is either absent or much weaker in the electron layer, even though the measurements are within the linear response regime. Correlated phases have been anticipated in these, but surprisingly, the experimental results appear to contradict Onsager's reciprocity theorem. △ Less

Submitted 27 October, 2009; v1 submitted 1 July, 2008; originally announced July 2008.

Comments: 4 pages, 5 EPS figures (replaced with published version)

Journal ref: PRL 101, 246801 (2008)

Patterned backgating using single-sided mask aligners: application to density-matched electron-hole bilayers

Authors: A. F. Croxall, K. Das Gupta, C. A. Nicoll, M. Thangaraj, I. Farrer, D. A. Ritchie, M. Pepper

Abstract: We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust met… ▽ More We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$μ$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph both sides of a thin patterned chip using inexpensive infra-red light emitting diodes (LED) and an inexpensive (consumer) digital camera. A robust method of contacting both sides of a sample using an ultrasonic bonder is described. In addition we present a mathematical model to analyse the variation of the electrochemical potential through the doped layers and heterojunctions that are normally present in most GaAs based devices. We utilise the technique and the estimates from our model to fabricate an electron-hole bilayer device in which each layer is separately contacted and has tunable densities. The electron and hole layers are separated by barriers either 25 or 15nm wide. In both cases, the densities can be matched by using appropriate bias voltages. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Comments: 7 pages, 8 EPS figures. Submitted to Journal of Applied Physics

Post-selective two-photon interference from a continuous non-classical stream of photons emitted by a quantum dot

Authors: R. B. Patel, A. J. Bennett, K. Cooper, P. Atkinson, C. A. Nicoll, D. A. Ritchie, A. J. Shields

Abstract: We report an electrically driven semiconductor single photon source capable of emitting photons with a coherence time of up to 400 ps under fixed bias. It is shown that increasing the injection current causes the coherence time to reduce and this effect is well explained by the fast modulation of a fluctuating environment. Hong-Ou-Mandel type two-photon interference using a Mach-Zehnder interfer… ▽ More We report an electrically driven semiconductor single photon source capable of emitting photons with a coherence time of up to 400 ps under fixed bias. It is shown that increasing the injection current causes the coherence time to reduce and this effect is well explained by the fast modulation of a fluctuating environment. Hong-Ou-Mandel type two-photon interference using a Mach-Zehnder interferometer is demonstrated using this source to test the indistinguishability of individual photons by post-selecting events where two photons collide at a beamsplitter. Finally, we consider how improvements in our detection system can be used to achieve a higher interference visibility. △ Less

Submitted 11 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures: for publication in Phys. Rev. Lett

Bell-inequality violation with a triggered photon-pair source

Authors: R. J. Young, R. M. Stevenson, A. J. Hudson, C. A. Nicoll, D. A. Ritchie, A. J. Shields

Abstract: Here we demonstrate, for the first time, violation of Bell's inequality using a triggered quantum dot photon-pair source without post-selection. Furthermore, the fidelity to the expected Bell state can be increased above 90% using temporal gating to reject photons emitted at times when collection of uncorrelated light is more probable. A direct measurement of a CHSH Bell inequality is made showi… ▽ More Here we demonstrate, for the first time, violation of Bell's inequality using a triggered quantum dot photon-pair source without post-selection. Furthermore, the fidelity to the expected Bell state can be increased above 90% using temporal gating to reject photons emitted at times when collection of uncorrelated light is more probable. A direct measurement of a CHSH Bell inequality is made showing a clear violation, highlighting that a quantum dot entangled photon source is suitable for communication exploiting non-local quantum correlations. △ Less

Submitted 4 April, 2008; originally announced April 2008.

Comments: 14 pages, 4 figures

Journal ref: Phys.Rev.Lett.102:030406,2009

Cavity-enhanced radiative emission rate in a single-photon-emitting diode operating at 0.5 GHz

Authors: David J. P. Ellis, Anthony J. Bennett, Samuel J. Dewhurst, Christine A. Nicoll, David A. Ritchie, Andrew J. Shields

Abstract: We report the observation of a Purcell enhancement in the electroluminescence decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an annulus of low-refractive-index aluminium oxide, formed by wet oxidation. The same layer acts as a current aperture, reducing the active area of the device without… ▽ More We report the observation of a Purcell enhancement in the electroluminescence decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an annulus of low-refractive-index aluminium oxide, formed by wet oxidation. The same layer acts as a current aperture, reducing the active area of the device without impeding the electrical properties of the p-i-n diode. This allowed single photon electroluminescence to be demonstrated at repetition rates up to 0.5 GHz. △ Less

Submitted 4 April, 2008; originally announced April 2008.

Comments: 11 pages, 4 Figures. To be published in New Journal of Physics

Evolution of entanglement within classical light states

Authors: R. Mark Stevenson, Andrew J. Hudson, Anthony J. Bennett, Robert J. Young, Christine A. Nicoll, David A. Ritchie, Andrew J. Shields

Abstract: We investigate the evolution of quantum correlations over the lifetime of a multi-photon state. Measurements reveal time-dependent oscillations of the entanglement fidelity for photon pairs created by a single semiconductor quantum dot. The oscillations are attributed to the phase acquired in the intermediate, non-degenerate, exciton-photon state and are consistent with simulations. We conclude… ▽ More We investigate the evolution of quantum correlations over the lifetime of a multi-photon state. Measurements reveal time-dependent oscillations of the entanglement fidelity for photon pairs created by a single semiconductor quantum dot. The oscillations are attributed to the phase acquired in the intermediate, non-degenerate, exciton-photon state and are consistent with simulations. We conclude that emission of photon pairs by a typical quantum dot with finite polarisation splitting is in fact entangled in a time-evolving state, and not classically correlated as previously regarded. △ Less

Submitted 27 March, 2008; originally announced March 2008.

Indistinguishable photons from a diode

Authors: A. J. Bennett, R. B. Patel, A. J. Shields, K. Cooper, P. Atkinson, C. A. Nicoll, D. A. Ritchie

Abstract: We generate indistinguishable photons from a semiconductor diode containing a InAs/GaAs quantum dot. Using an all-electrical technique to populate and control a single-photon emitting state we filter-out dephasing by Stark-shifting the emission energy on timescales below the dephasing time of the state. Mixing consecutive photons on a beam-splitter we observe two-photon interference with a visib… ▽ More We generate indistinguishable photons from a semiconductor diode containing a InAs/GaAs quantum dot. Using an all-electrical technique to populate and control a single-photon emitting state we filter-out dephasing by Stark-shifting the emission energy on timescales below the dephasing time of the state. Mixing consecutive photons on a beam-splitter we observe two-photon interference with a visibility of 64%. △ Less

Submitted 26 March, 2008; originally announced March 2008.

Coherence of an Entangled Exciton-Photon State

Authors: A. J. Hudson, R. M. Stevenson, A. J. Bennett, R. J. Young, C. A. Nicoll, P. Atkinson, K. Cooper, D. A. Ritchie, A. J. Shields

Abstract: We study the effect of the exciton fine-structure splitting on the polarisation-entanglement of photon pairs produced by the biexciton cascade in a single quantum dot. The entanglement is found to persist despite separations between the intermediate energy levels of up to 4 micro-eV. Measurements demonstrate that entanglement of the photon pair is robust to the dephasing of the intermediate exci… ▽ More We study the effect of the exciton fine-structure splitting on the polarisation-entanglement of photon pairs produced by the biexciton cascade in a single quantum dot. The entanglement is found to persist despite separations between the intermediate energy levels of up to 4 micro-eV. Measurements demonstrate that entanglement of the photon pair is robust to the dephasing of the intermediate exciton state responsible for the first order coherence time of either single photon. We present a theoretical framework taking into account the effects of spin-scattering, background light and dephasing. We distinguish between the first-order coherence time, and a parameter which we measure for the first time and define as the cross-coherence time. △ Less

Submitted 4 October, 2007; v1 submitted 24 July, 2007; originally announced July 2007.