Wafer-scale fabrication of two-dimensional beta-In2Se3 photodetectors
Authors:
Marcel S. Claro,
Justyna Grzonka,
Nicoleta Nicoara,
Paulo J. Ferreira,
Sascha Sadewasser
Abstract:
The epitaxial growth of two-dimensional (2D) $β-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm), was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and aberration-corrected scanning transmission electron microscopy (ac-STEM). Wafer-scale fabrica…
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The epitaxial growth of two-dimensional (2D) $β-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm), was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and aberration-corrected scanning transmission electron microscopy (ac-STEM). Wafer-scale fabrication of photodetectors based on five quintuple layers was produced using photolithography and other standard semiconductor processing methods. The photodetectors exhibit responsivity of 3 mA/W, peak specific detectivity (D*) of $10^9$ Jones, external quantum efficiency (EQE) of 0.67 % at 550 nm, and response-time of ~7 ms, which is faster than any result previously reported for $β-In_2Se_3$ photodetectors. From the photocurrent measurements, an optical bandgap of 1.38 eV was observed. These results on wafer-scale deposition of 2D $In_2Se_3$, as well as its fabrication into optoelectronic devices provide the missing link that will enable the commercialization of 2D materials.
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Submitted 30 November, 2020; v1 submitted 21 May, 2020;
originally announced May 2020.
