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High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
A. Elbaroudy,
A. W. M. Jordan,
F. Thompson,
George Nichols,
Y. Shi,
Man Chun Tam,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$Å are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $μ$V and critical current densities up to 9.6 $μ$A/$μ$m, among the largest values reported for Nb-InAs SNS devices.
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Submitted 22 May, 2024;
originally announced May 2024.
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Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
Authors:
A. Elbaroudy,
B. Khromets,
F. Sfigakis,
E. Bergeron,
Y. Shi,
M. C. A. Tam,
T. Blaikie,
George Nichols,
J. Baugh,
Z. R. Wasilewski
Abstract:
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a th…
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Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.
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Submitted 19 April, 2024; v1 submitted 27 January, 2024;
originally announced January 2024.
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Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
Y. Shi,
George Nichols,
P. C. Klipstein,
A. Elbaroudy,
Sean M. Walker,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are obser…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=1$ in magnetic fields of up to $B=18$ T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4$\times 10^{11}$ cm$^{-2}$, and peak mobilities exceed 24,000 cm$^2$/Vs. Large Rashba spin-orbit coefficients up to 110 meV$\cdot$Å are obtained through weak anti-localization measurements. An effective mass of 0.019$m_e$ is determined from temperature-dependent magnetoresistance measurements, and a g-factor of 41 at a density of 3.6$\times 10^{11}$ cm$^{-2}$ is obtained from coincidence measurements in tilted magnetic fields. By comparing two heterostructures with and without a delta-doped layer beneath the quantum well, we find that the carrier density is stable with time when do** in the ternary Al$_{0.1}$In$_{0.9}$Sb barrier is not present. Finally, the effect of modulation do** on structural asymmetry between the two heterostructures is characterized.
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Submitted 7 January, 2023; v1 submitted 16 September, 2022;
originally announced September 2022.
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Solution to the Gliding Tone Problem
Authors:
Brian Cowan,
Andrew Morris-Costigliola,
George Nichols
Abstract:
The solution is given to the classical problem of an oscillator driven by a sinusoid of steadily-varying frequency. A closed analytical expression is obtained in the case where the Q-factor of the oscillator is high, equivalent to the rotating wave approximation of atomic physics. In this case all independent variables of the system combine into a single parameter. The results are compared with pr…
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The solution is given to the classical problem of an oscillator driven by a sinusoid of steadily-varying frequency. A closed analytical expression is obtained in the case where the Q-factor of the oscillator is high, equivalent to the rotating wave approximation of atomic physics. In this case all independent variables of the system combine into a single parameter. The results are compared with previous work: series and other approximations, numerical calculations, graphical solutions and analogue simulations. Attention is paid to the distortion of the resonance -- specifically frequency shift and amplitude attenuation -- consequent upon the finite sweep rate. The frequency shift is interpreted as a delay in the appearance of the resonance peak; to leading order this time delay is twice the oscillator's ring-down time. Measurements on a high-Q oscillator are consistent with the mathematical solution.
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Submitted 24 October, 2019;
originally announced October 2019.
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Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides
Authors:
Hyun Ho Kim,
Bowen Yang,
Siwen Li,
Shengwei Jiang,
Chenhao **,
Zui Tao,
George Nichols,
Francois Sfigakis,
Shazhou Zhong,
Chenghe Li,
Shangjie Tian,
David G. Cory,
Guo-Xing Miao,
Jie Shan,
Kin Fai Mak,
Hechang Lei,
Kai Sun,
Liuyan Zhao,
Adam W. Tsen
Abstract:
We conduct a comprehensive study of three different magnetic semiconductors, CrI$_3$, CrBr$_3$, and CrCl$_3$, by incorporating both few- and bi-layer samples in van der Waals tunnel junctions. We find that the interlayer magnetic ordering, exchange gap, magnetic anisotropy, as well as magnon excitations evolve systematically with changing halogen atom. By fitting to a spin wave theory that account…
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We conduct a comprehensive study of three different magnetic semiconductors, CrI$_3$, CrBr$_3$, and CrCl$_3$, by incorporating both few- and bi-layer samples in van der Waals tunnel junctions. We find that the interlayer magnetic ordering, exchange gap, magnetic anisotropy, as well as magnon excitations evolve systematically with changing halogen atom. By fitting to a spin wave theory that accounts for nearest neighbor exchange interactions, we are able to further determine a simple spin Hamiltonian describing all three systems. These results extend the 2D magnetism platform to Ising, Heisenberg, and XY spin classes in a single material family. Using magneto-optical measurements, we additionally demonstrate that ferromagnetism can be stabilized down to monolayer in more isotropic CrBr$_3$, with transition temperature still close to that of the bulk.
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Submitted 23 May, 2019; v1 submitted 4 March, 2019;
originally announced March 2019.
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Origin of magnetoresistance suppression in thin $γ$-MoTe$_2$
Authors:
Shazhou Zhong,
Archana Tiwari,
George Nichols,
Fangchu Chen,
Xuan Luo,
Yu** Sun,
Adam W. Tsen
Abstract:
We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $γ$-MoTe$_2$, protected from oxidation. We find that the magnetoresistance is systematically suppressed with reduced thickness. This occurs concomitantly with both a decrease in carrier mobility an…
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We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $γ$-MoTe$_2$, protected from oxidation. We find that the magnetoresistance is systematically suppressed with reduced thickness. This occurs concomitantly with both a decrease in carrier mobility and increase in electron-hole imbalance. We model the two effects separately and conclude that the XMR effect is more sensitive to the former.
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Submitted 18 May, 2018;
originally announced May 2018.
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Magnetic Field Dependent Microwave Losses in Superconducting Niobium Microstrip Resonators
Authors:
Sangil Kwon,
Anita Fadavi Roudsari,
Olaf W. B. Benningshof,
Yong-Chao Tang,
Hamid R. Mohebbi,
Ivar A. J. Taminiau,
Deler Langenberg,
Shinyoung Lee,
George Nichols,
David G. Cory,
Guo-Xing Miao
Abstract:
We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For pe…
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We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For perpendicular fields, the dominant loss mechanism is vortex motion or switches from quasiparticle generation to vortex motion, depending on cooling procedures. In particular, we introduce a plot of the quality factor versus the resonance frequency as a general method for identifying the dominant loss mechanism. We calculate the expected resonance frequency and the quality factor as a function of the magnetic field by modeling the complex resistivity. Key parameters characterizing microwave loss are estimated from comparisons of the observed and expected resonator properties. Based on these key parameters, we find a niobium resonator whose thickness is similar to its penetration depth is the best choice for X-band electron spin resonance applications. Finally, we detect partial release of the Meissner current at the vortex penetration field, suggesting that the interaction between vortices and the Meissner current near the edges is essential to understand the magnetic field dependence of the resonator properties.
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Submitted 26 June, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.
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Frequency Dependence of the Supersolid Signature in Polycrystalline 4He
Authors:
George Nichols,
Malcolm Poole,
Jan Nyeki,
John Saunders,
Brian Cowan
Abstract:
We report studies, using a two mode torsional oscillator, of the putative supersolid signature in polycrystalline 4He. Measurements at two frequencies enable us to eliminate the viscoelastic contribution to the signature, and other instrumental effects arising from the temperature dependent shear modulus of the sample. The complex response function of the sample, encoded via its effective moment o…
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We report studies, using a two mode torsional oscillator, of the putative supersolid signature in polycrystalline 4He. Measurements at two frequencies enable us to eliminate the viscoelastic contribution to the signature, and other instrumental effects arising from the temperature dependent shear modulus of the sample. The complex response function of the sample, encoded via its effective moment of inertia, shows an unexpected and unexplained frequency dependence. This cannot be accounted for by glassy dynamics within the sample. The results do not rule out the possibility of supersolidity in bulk solid 4He. ?
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Submitted 21 September, 2014; v1 submitted 13 November, 2013;
originally announced November 2013.
