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Magnetic Field Tolerant Superconducting Spiral Resonators for Circuit QED
Authors:
M. Medahinne,
Y. P. Kandel,
S. Thapa Magar,
E. Champion,
J. M. Nichol,
M. S. Blok
Abstract:
We present spiral resonators of thin film niobium (Nb) that exhibit large geometric inductance, high critical magnetic fields and high single photon quality factors. These low loss geometric inductors can be a compelling alternative to kinetic inductors to create high-impedance superconducting devices for applications that require magnetic fields. By varying the spiral pitch, we realize resonators…
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We present spiral resonators of thin film niobium (Nb) that exhibit large geometric inductance, high critical magnetic fields and high single photon quality factors. These low loss geometric inductors can be a compelling alternative to kinetic inductors to create high-impedance superconducting devices for applications that require magnetic fields. By varying the spiral pitch, we realize resonators with characteristic impedances ranging from 3.25-7.09 kΩ. We measure the temperature and magnetic field dependent losses and find that the high-impedance resonators maintain an intrinsic quality factor above {\sim} 10^5 for parallel magnetic fields of up to 1 T. These properties make spiral Nb resonators a promising candidate for quantum devices that require circuit elements with high impedance and magnetic field resilience.
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Submitted 14 June, 2024;
originally announced June 2024.
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Dynamically corrected gates in silicon singlet-triplet spin qubits
Authors:
Habitamu Y. Walelign,
Xinxin Cai,
Bikun Li,
Edwin Barnes,
John M. Nichol
Abstract:
Fault-tolerant quantum computation requires low physical-qubit gate errors. Many approaches exist to reduce gate errors, including both hardware- and control-optimization strategies. Dynamically corrected gates are designed to cancel specific errors and offer the potential for high-fidelity gates, but they have yet to be implemented in singlet-triplet spin qubits in semiconductor quantum dots, due…
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Fault-tolerant quantum computation requires low physical-qubit gate errors. Many approaches exist to reduce gate errors, including both hardware- and control-optimization strategies. Dynamically corrected gates are designed to cancel specific errors and offer the potential for high-fidelity gates, but they have yet to be implemented in singlet-triplet spin qubits in semiconductor quantum dots, due in part to the stringent control constraints in these systems. In this work, we experimentally implement dynamically corrected gates designed to mitigate hyperfine noise in a singlet-triplet qubit realized in a Si/SiGe double quantum dot. The corrected gates reduce infidelities by about a factor of three, resulting in gate fidelities above 0.99 for both identity and Hadamard gates. The gate performances depend sensitively on pulse distortions, and their specific performance reveals an unexpected distortion in our experimental setup.
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Submitted 23 May, 2024;
originally announced May 2024.
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The nuclear-spin dark state in silicon
Authors:
Xinxin Cai,
Habitamu Y. Walelign,
John M. Nichol
Abstract:
We report the formation of a nuclear-spin dark state in a gate-defined silicon double quantum dot. The dark state has been predicted to emerge during dynamic nuclear polarization when the electrons in the quantum dot drive the nuclei in the semiconductor into a decoupled state. We show that, as expected, the electron-nuclear coupling rapidly diminishes in the dark state, and that this state depend…
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We report the formation of a nuclear-spin dark state in a gate-defined silicon double quantum dot. The dark state has been predicted to emerge during dynamic nuclear polarization when the electrons in the quantum dot drive the nuclei in the semiconductor into a decoupled state. We show that, as expected, the electron-nuclear coupling rapidly diminishes in the dark state, and that this state depends on the synchronized precession of the nuclear spins. Moreover, the dark state significantly increases the lifetimes of electronic spin states. This nuclear-spin dark state could be used as a quantum memory or as a resource for quantum sensing, and further studies of the dark state may point the way toward increased polarization of nuclear spin ensembles.
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Submitted 23 May, 2024;
originally announced May 2024.
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Ballast charges for semiconductor spin qubits
Authors:
Yujun Choi,
John M. Nichol,
Edwin Barnes
Abstract:
Semiconductor spin qubits are an attractive platform for quantum computing, but their performance is degraded primarily by fluctuating electromagnetic environments. We introduce the concept of ballast charges, which are induced charges on the surface of an additional screening layer situated below the qubits. The counteractive behavior of these charges can significantly reduce the power spectral d…
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Semiconductor spin qubits are an attractive platform for quantum computing, but their performance is degraded primarily by fluctuating electromagnetic environments. We introduce the concept of ballast charges, which are induced charges on the surface of an additional screening layer situated below the qubits. The counteractive behavior of these charges can significantly reduce the power spectral density associated with fluctuations from two-level systems that contribute to charge noise. Our simulations show that the dephasing time of a spin qubit in a Si/SiGe device increases by a factor of 4 to 6 on average when using this method. We also discuss the physical implementation and potential challenges of this approach.
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Submitted 22 May, 2024;
originally announced May 2024.
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Characterization of individual charge fluctuators in Si/SiGe quantum dots
Authors:
Feiyang Ye,
Ammar Ellaboudy,
Dylan Albrecht,
Rohith Vudatha,
N. Tobias Jacobson,
John M. Nichol
Abstract:
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the f…
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Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the fluctuators that cause charge noise remain unanswered. Here, we probe individual two-level fluctuators (TLFs) in Si/SiGe quantum dots through simple quantum-dot transport measurement and analyses based on the Allan variance and factorial hidden Markov modeling. We find that the TLF switching times depend sensitively on gate voltages, decrease with temperature, and depend on the current through a nearby quantum dot. A model for the data of the primary TLF we study indicates that it may be a bistable charge dipole near the plunger gate electrode, heated by current through the sensor dot, and experiencing state transitions driven not by direct electron-phonon coupling but through some other mechanism such as coupling to electrons passing through the sensor dot.
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Submitted 25 January, 2024;
originally announced January 2024.
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Coherent Optical Coupling to Surface Acoustic Wave Devices
Authors:
Arjun Iyer,
Yadav P. Kandel,
Wendao Xu,
John M. Nichol,
William H. Renninger
Abstract:
Surface acoustic waves (SAW) and associated SAW devices are ideal for sensing, metrology, and connecting and controlling hybrid quantum devices. While the advances demonstrated to date are largely based on electromechanical coupling, a robust and customizable coherent optical coupling would unlock mature and powerful cavity optomechanical control techniques and an efficient optical pathway for lon…
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Surface acoustic waves (SAW) and associated SAW devices are ideal for sensing, metrology, and connecting and controlling hybrid quantum devices. While the advances demonstrated to date are largely based on electromechanical coupling, a robust and customizable coherent optical coupling would unlock mature and powerful cavity optomechanical control techniques and an efficient optical pathway for long-distance quantum links. Here we demonstrate direct and robust coherent optical coupling to surface acoustic wave cavities through a Brillouin-like optomechanical interaction. In high-frequency SAW cavities designed with curved metallic acoustic reflectors deposited on crystalline substrates, SAW modes are efficiently optically accessed in piezo-active directions that can be accessed through traditionally electromechanical techniques as well as non-piezo-active directions that cannot. The non-contact nature of the optical technique enables controlled analysis of dissipation mechanisms and access to pristine mechanical resonators with record-level quality factors (>100,000 measured here). The exceptional control of the optical probe beams also enables detailed transverse spatial mode spectroscopy, for the first time. These advantages combined with simple fabrication, small size, large power handling, and strong coupling to quantum systems make SAW optomechanical platforms particularly attractive for sensing, material science, and hybrid quantum systems.
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Submitted 6 July, 2023; v1 submitted 2 July, 2023;
originally announced July 2023.
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High-impedance surface acoustic wave resonators
Authors:
Yadav P. Kandel,
Suraj Thapa Magar,
Arjun Iyer,
William H. Renninger,
John M. Nichol
Abstract:
Because of their small size, low loss, and compatibility with magnetic fields and elevated temperatures, surface acoustic wave resonators hold significant potential as future quantum interconnects. Here, we design, fabricate, and characterize GHz-frequency surface acoustic wave resonators with the potential for strong capacitive coupling to nanoscale solid-state quantum systems, including semicond…
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Because of their small size, low loss, and compatibility with magnetic fields and elevated temperatures, surface acoustic wave resonators hold significant potential as future quantum interconnects. Here, we design, fabricate, and characterize GHz-frequency surface acoustic wave resonators with the potential for strong capacitive coupling to nanoscale solid-state quantum systems, including semiconductor quantum dots. Strong capacitive coupling to such systems requires a large characteristic impedance, and the resonators we fabricate have impedance values above 100 $Ω$. We achieve such high impedance values by tightly confining a Gaussian acoustic mode. At the same time, the resonators also have low loss, with quality factors of several thousand at millikelvin temperatures. These high-impedance resonators are expected to exhibit large vacuum electric-field fluctuations and have the potential for strong coupling to a variety of solid-state quantum systems.
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Submitted 5 January, 2024; v1 submitted 22 June, 2023;
originally announced June 2023.
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Analog Quantum Simulation of the Dynamics of Open Quantum Systems with Quantum Dots and Microelectronic Circuits
Authors:
Chang Woo Kim,
John M. Nichol,
Andrew N. Jordan,
Ignacio Franco
Abstract:
We introduce a general setup for the analog quantum simulation of the dynamics of open quantum systems based on semiconductor quantum dots electrically connected to a chain of quantum $RLC$ electronic circuits. The dots are chosen to be in the regime of spin-charge hybridization to enhance their sensitivity to the $RLC$ circuits while mitigating the detrimental effects of unwanted noise. In this c…
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We introduce a general setup for the analog quantum simulation of the dynamics of open quantum systems based on semiconductor quantum dots electrically connected to a chain of quantum $RLC$ electronic circuits. The dots are chosen to be in the regime of spin-charge hybridization to enhance their sensitivity to the $RLC$ circuits while mitigating the detrimental effects of unwanted noise. In this context, we establish an experimentally realizable map between the hybrid system and a qubit coupled to thermal harmonic environments of arbitrary complexity that enables the analog quantum simulation of open quantum systems. We assess the utility of the simulator by numerically exact emulations that indicate that the experimental setup can faithfully mimic the intended target even in the presence of its natural inherent noise. We further provide a detailed analysis of the physical requirements on the quantum dots and the $RLC$ circuits needed to experimentally realize this proposal that indicates that the simulator can be created with existing technology. The approach can exactly capture the effects of highly structured non-Markovian quantum environments typical of photosynthesis and chemical dynamics, and offer clear potential advantages over conventional and even quantum computation. The proposal opens a general path for effective quantum dynamics simulations based on semiconductor quantum dots.
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Submitted 5 October, 2022; v1 submitted 22 March, 2022;
originally announced March 2022.
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Semiconductor Spin Qubits
Authors:
Guido Burkard,
Thaddeus D. Ladd,
John M. Nichol,
Andrew Pan,
Jason R. Petta
Abstract:
The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to electric fields, leading to long quantum coherence times. We review the physics of semiconductor spin qubits, focusing not only on the early achievements of spin initialization, control, and readou…
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The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to electric fields, leading to long quantum coherence times. We review the physics of semiconductor spin qubits, focusing not only on the early achievements of spin initialization, control, and readout in GaAs quantum dots, but also on recent advances in Si and Ge spin qubits, including improved charge control and readout, coupling to other quantum degrees of freedom, and scaling to larger system sizes. We begin by introducing the four major types of spin qubits: single spin qubits, donor spin qubits, singlet-triplet spin qubits, and exchange-only spin qubits. We then review the mesoscopic physics of quantum dots, including single-electron charging, valleys, and spin-orbit coupling. We next give a comprehensive overview of the physics of exchange interactions, a crucial resource for single- and two-qubit control in spin qubits. The bulk of this review is centered on the presentation of results from each major spin qubit type, the present limits of fidelity, and a brief overview of alternative spin qubit platforms. We then give a physical description of the impact of noise on semiconductor spin qubits, aided in large part by an introduction to the filter function formalism. Lastly, we review recent efforts to hybridize spin qubits with superconducting systems, including charge-photon coupling, spin-photon coupling, and long-range cavity-mediated spin-spin interactions. Cavity-based readout approaches are also discussed. This review is intended to give an appreciation for the future prospects of semiconductor spin qubits, while highlighting the key advances in mesoscopic physics over the past two decades that underlie the operation of modern quantum-dot and donor spin qubits.
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Submitted 16 December, 2021;
originally announced December 2021.
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Coherent spin-valley oscillations in silicon
Authors:
Xinxin Cai,
Elliot J. Connors,
John M. Nichol
Abstract:
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results from the specific character of the Si band structure, is a unique feature of electrons in Si spin qubits. However, the small difference in energy between differe…
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Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results from the specific character of the Si band structure, is a unique feature of electrons in Si spin qubits. However, the small difference in energy between different valley levels often poses a challenge for quantum computing in Si. Here, we show that the spin-valley coupling in Si, which enables transitions between states with different spin and valley quantum numbers, enables coherent control of electron spins in Si. We demonstrate coherent manipulation of effective single- and two-electron spin states in a Si/SiGe double quantum dot without ac magnetic or electric fields. Our results illustrate that the valley degree of freedom, which is often regarded as an inconvenience, can itself enable quantum manipulation of electron spin states.
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Submitted 29 November, 2021;
originally announced November 2021.
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Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
Authors:
Elliot J. Connors,
JJ Nelson,
Lisa F. Edge,
John M. Nichol
Abstract:
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nea…
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Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.
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Submitted 18 February, 2022; v1 submitted 3 March, 2021;
originally announced March 2021.
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Protecting Quantum Information in Quantum Dot Spin Chains by Driving Exchange Interactions Periodically
Authors:
John S. Van Dyke,
Yadav P. Kandel,
Haifeng Qiao,
John M. Nichol,
Sophia E. Economou,
Edwin Barnes
Abstract:
Recent work has demonstrated a new route to discrete time crystal physics in quantum spin chains by periodically driving nearest-neighbor exchange interactions in gate-defined quantum dot arrays [arXiv:2006.10913]. Here, we present a detailed analysis of exchange-driven Floquet physics in small arrays of GaAs quantum dots, including phase diagrams and additional diagnostics. We also show that emer…
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Recent work has demonstrated a new route to discrete time crystal physics in quantum spin chains by periodically driving nearest-neighbor exchange interactions in gate-defined quantum dot arrays [arXiv:2006.10913]. Here, we present a detailed analysis of exchange-driven Floquet physics in small arrays of GaAs quantum dots, including phase diagrams and additional diagnostics. We also show that emergent time-crystalline behavior can benefit the protection and manipulation of multi-spin states. For typical levels of nuclear spin noise in GaAs, the combination of driving and interactions protects spin-singlet states beyond what is possible in the absence of exchange interactions. We further show how to construct a time-crystal-inspired CZ gate between singlet-triplet qubits with high fidelity. These results show that periodically driving exchange couplings can enhance the performance of quantum dot spin systems for quantum information applications.
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Submitted 17 September, 2020;
originally announced September 2020.
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Long-Distance Superexchange between Semiconductor Quantum-Dot Electron Spins
Authors:
Haifeng Qiao,
Yadav P. Kandel,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Xuedong Hu,
John M. Nichol
Abstract:
Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance…
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Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance spin-chain-mediated superexchange coupling between electron spin qubits in semiconductor quantum dots. We weakly couple two electron spins to the ends of a two-site spin chain. Depending on the spin state of the chain, we observe oscillations between the distant end spins. We resolve the dynamics of both the end spins and the chain itself, and our measurements agree with simulations. Superexchange is a promising technique to create long-distance coupling between quantum-dot spin qubits.
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Submitted 11 January, 2021; v1 submitted 13 September, 2020;
originally announced September 2020.
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Adiabatic quantum state transfer in a semiconductor quantum-dot spin chain
Authors:
Yadav P. Kandel,
Haifeng Qiao,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
John M. Nichol
Abstract:
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconducto…
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Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconductor quantum-dot electron spins. By adiabatically modifying exchange couplings, we transfer single- and two-spin states between distant electrons in less than 127 ns. We also show that this method can be cascaded for spin-state transfer in long spin chains. Based on simulations, we estimate that the probability to correctly transfer single-spin eigenstates and two-spin singlet states can exceed 0.95 for the experimental parameters studied here. In the future, state and process tomography will be required to verify the transfer of arbitrary single qubit states with a fidelity exceeding the classical bound. Adiabatic quantum-state transfer is robust to noise and pulse-timing errors. This method will be useful for initialization, state distribution, and readout in large spin-qubit arrays for gate-based quantum computing. It also opens up the possibility of universal adiabatic quantum computing in semiconductor quantum-dot spin qubits.
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Submitted 12 March, 2021; v1 submitted 7 July, 2020;
originally announced July 2020.
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Floquet-Enhanced Spin Swaps
Authors:
Haifeng Qiao,
Yadav P. Kandel,
John S. Van Dyke,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Edwin Barnes,
John M. Nichol
Abstract:
The transfer of information between quantum systems is essential for quantum communication and computation. In quantum computers, high connectivity between qubits can improve the efficiency of algorithms, assist in error correction, and enable high-fidelity readout. However, as with all quantum gates, operations to transfer information between qubits can suffer from errors associated with spurious…
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The transfer of information between quantum systems is essential for quantum communication and computation. In quantum computers, high connectivity between qubits can improve the efficiency of algorithms, assist in error correction, and enable high-fidelity readout. However, as with all quantum gates, operations to transfer information between qubits can suffer from errors associated with spurious interactions and disorder between qubits, among other things. Here, we harness interactions and disorder between qubits to improve a swap operation for spin eigenstates in semiconductor gate-defined quantum-dot spins. We use a system of four electron spins, which we configure as two exchange-coupled singlet-triplet qubits. Our approach, which relies on the physics underlying discrete time crystals, enhances the quality factor of spin-eigenstate swaps by up to an order of magnitude. Our results show how interactions and disorder in multi-qubit systems can stabilize non-trivial quantum operations and suggest potential uses for non-equilibrium quantum phenomena, like time crystals, in quantum information processing applications. Our results also confirm the long-predicted emergence of effective Ising interactions between exchange-coupled singlet-triplet qubits.
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Submitted 5 March, 2021; v1 submitted 18 June, 2020;
originally announced June 2020.
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Coherent multi-spin exchange coupling in a quantum-dot spin chain
Authors:
Haifeng Qiao,
Yadav P. Kandel,
Kuangyin Deng,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Edwin Barnes,
John M. Nichol
Abstract:
Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange cou…
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Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing simultaneous exchange couplings is the nonlinear and nonlocal dependence of the exchange couplings on gate voltages. Through a combination of electrostatic simulation and theoretical modeling, we show that this challenge arises primarily due to lateral shifts of the quantum dots during gate pulses. Building on this insight, we develop two models, which can be used to predict the confinement gate voltages for a desired set of exchange couplings. Although the model parameters depend on the number of exchange couplings desired (suggesting that effects in addition to lateral wavefunction shifts are important), the models are sufficient to enable simultaneous and independent control of all three exchange couplings in a quadruple quantum dot. We demonstrate two-, three-, and four-spin exchange oscillations, and our data agree with simulations.
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Submitted 8 July, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
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Rapid high-fidelity spin state readout in Si/SiGe quantum dots via radio-frequency reflectometry
Authors:
Elliot J. Connors,
JJ Nelson,
John M. Nichol
Abstract:
Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive. Radio-frequency reflectometry enables rapid high-fidelity readout of GaAs spin qubits, but the relatively large resistances and capacitances of accumulation-mode…
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Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive. Radio-frequency reflectometry enables rapid high-fidelity readout of GaAs spin qubits, but the relatively large resistances and capacitances of accumulation-mode Si quantum dot devices have made radio-frequency reflectometry challenging in these platforms. In this work, we implement radio-frequency reflectometry in a Si/SiGe quantum dot device with overlap** gates by making minor device-level changes that eliminate these challenges. We demonstrate charge state readout with a fidelity above 99.9% in an integration time of 300 ns. We measure the singlet and triplet states of a double quantum dot via both conventional Pauli spin blockade and a charge latching mechanism, and we achieve maximum fidelities of 82.9% and 99.0% in 2.08 $μ$s and 1.6 $μ$s integration times, respectively. We also use radio-frequency reflectometry to perform single-shot readout of single-spin states via spin-selective tunneling in microsecond-scale integration times.
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Submitted 8 July, 2020; v1 submitted 19 October, 2019;
originally announced October 2019.
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Conditional Teleportation of Quantum-Dot Spin States
Authors:
Haifeng Qiao,
Yadav P. Kandel,
Sreenath K. Manikandan,
Andrew N. Jordan,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
John M. Nichol
Abstract:
Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a c…
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Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a challenge, and this goal remains the focus of intense research. Quantum teleportation is a canonical method to transmit qubit states, but it has not been implemented in quantum-dot spin qubits. Here, we present evidence for quantum teleportation of electron spin qubits in semiconductor quantum dots. Although we have not performed quantum state tomography to definitively assess the teleportation fidelity, our data are consistent with conditional teleportation of spin eigenstates, entanglement swap**, and gate teleportation. Such evidence for all-matter spin-state teleportation underscores the capabilities of exchange-coupled spin qubits for quantum-information transfer.
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Submitted 16 June, 2020; v1 submitted 22 August, 2019;
originally announced August 2019.
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Low-frequency charge noise in Si/SiGe quantum dots
Authors:
Elliot J. Connors,
JJ Nelson,
Haifeng Qiao,
Lisa F. Edge,
John M. Nichol
Abstract:
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si/SiGe quantum dots with overlap**…
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Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si/SiGe quantum dots with overlap** gates. We find that charge noise increases with aluminum oxide thickness. We also find strong dot-to-dot variations in the temperature dependence of the noise magnitude and spectrum. These findings suggest that each quantum dot experiences noise caused by a distinct ensemble of two-level systems, each of which has a non-uniform distribution of thermal activation energies. Taken together, our results suggest that charge noise in Si/SiGe quantum dots originates at least in part from a non-uniform distribution of two-level systems near the surface of the semiconductor.
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Submitted 23 July, 2020; v1 submitted 17 July, 2019;
originally announced July 2019.
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Coherent spin state transfer via Heisenberg exchange
Authors:
Yadav P. Kandel,
Haifeng Qiao,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
John M. Nichol
Abstract:
Quantum information science has the potential to revolutionize modern technology by providing resource-efficient approaches to computing, communication, and sensing. Although the physical qubits in a realistic quantum device will inevitably suffer errors, quantum error correction creates a path to fault-tolerant quantum information processing. Quantum error correction, however, requires that indiv…
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Quantum information science has the potential to revolutionize modern technology by providing resource-efficient approaches to computing, communication, and sensing. Although the physical qubits in a realistic quantum device will inevitably suffer errors, quantum error correction creates a path to fault-tolerant quantum information processing. Quantum error correction, however, requires that individual qubits can interact with many other qubits in the processor. Engineering this high connectivity can pose a challenge for platforms like electron spin qubits that naturally favor linear arrays. Here, we present an experimental demonstration of the transmission of electron spin states via Heisenberg exchange in an array of spin qubits. We transfer both single-spin and entangled states back and forth in a quadruple quantum-dot array without moving any electrons. Because it is scalable to large numbers of qubits, state transfer through Heisenberg exchange will be especially useful for multi-qubit gates and error-correction in spin-based quantum computers.
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Submitted 12 July, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
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Stabilization and manipulation of multispin states in quantum-dot time crystals with Heisenberg interactions
Authors:
Edwin Barnes,
John M. Nichol,
Sophia E. Economou
Abstract:
A discrete time crystal is a recently discovered non-equilibrium phase of matter that has been shown to exist in disordered, periodically driven Ising spin chains. In this phase, if the system is initially prepared in one of a certain class of pure multispin product states, it periodically returns to this state over very long time scales despite the presence of interactions, disorder, and pulse im…
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A discrete time crystal is a recently discovered non-equilibrium phase of matter that has been shown to exist in disordered, periodically driven Ising spin chains. In this phase, if the system is initially prepared in one of a certain class of pure multispin product states, it periodically returns to this state over very long time scales despite the presence of interactions, disorder, and pulse imperfections. Here, we show that this phase occurs in GaAs quantum dot spin arrays containing as few as three quantum dots, each confining one electron spin, for naturally occurring levels of nuclear spin noise and charge noise. Although the physical interaction in these arrays is a nearest-neighbor Heisenberg exchange interaction, we show that this can be effectively converted into an Ising interaction by applying additional pulses during each drive period. We show that by changing the rotation axis of these pulses, we can select the direction of the Ising interaction and, consequently, the quantization axis of the stabilized multispin states. Moreover, we demonstrate that it is possible to perform coherent rotations of the stabilized states while remaining in the time crystal phase. These findings open up the intriguing possibility of using time crystal phases to extend the lifetime of quantum states for information applications.
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Submitted 28 January, 2019; v1 submitted 12 October, 2018;
originally announced October 2018.
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Readout Of Singlet-Triplet Qubits At Large Magnetic Field Gradients
Authors:
Lucas A. Orona,
John M. Nichol,
Shannon P. Harvey,
Charlotte G. L. Bøttcher,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Amir Yacoby
Abstract:
Visibility of singlet-triplet qubit readout is reduced to almost zero in large magnetic field gradients due to relaxation processes. Here we present a new readout technique that is robust against relaxation and allows for measurement when previously studied methods fail. This technique maps the qubit onto spin states that are immune to relaxation using a spin dependent electron tunneling process b…
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Visibility of singlet-triplet qubit readout is reduced to almost zero in large magnetic field gradients due to relaxation processes. Here we present a new readout technique that is robust against relaxation and allows for measurement when previously studied methods fail. This technique maps the qubit onto spin states that are immune to relaxation using a spin dependent electron tunneling process between the qubit and the lead. We probe this readout's performance as a function of magnetic field gradient and applied magnetic field, and optimize the pulse applied to the qubit through experiment and simulation.
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Submitted 22 February, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
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High-fidelity entangling gate for double-quantum-dot spin qubits
Authors:
John M. Nichol,
Lucas A. Orona,
Shannon P. Harvey,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Amir Yacoby
Abstract:
Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, develo** a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress deco…
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Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, develo** a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking and self-consistent quantum measurement, state, and process tomography, we measure single-qubit gate fidelities of approximately 99% and an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
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Submitted 15 August, 2016;
originally announced August 2016.
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Electron spin-flip correlations due to nuclear dynamics in driven GaAs double dots
Authors:
Arijeet Pal,
John M. Nichol,
Michael D. Shulman,
Shannon P. Harvey,
Vladimir Umansky,
Emmanuel I. Rashba,
Amir Yacoby,
Bertrand I. Halperin
Abstract:
We present experimental data and associated theory for correlations in a series of experiments involving repeated Landau-Zener sweeps through the crossing point of a singlet state and a spin aligned triplet state in a GaAs double quantum dot containing two conduction electrons, which are loaded in the singlet state before each sweep, and the final spin is recorded after each sweep. The experiments…
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We present experimental data and associated theory for correlations in a series of experiments involving repeated Landau-Zener sweeps through the crossing point of a singlet state and a spin aligned triplet state in a GaAs double quantum dot containing two conduction electrons, which are loaded in the singlet state before each sweep, and the final spin is recorded after each sweep. The experiments reported here measure correlations on time scales from 4 $μ$s to 2 ms. When the magnetic field is aligned in a direction such that spin-orbit coupling cannot cause spin flips, the correlation spectrum has prominent peaks centered at zero frequency and at the differences of the Larmor frequencies of the nuclei, on top of a frequency-independent background. When the spin-orbit field is relevant, there are additional peaks, centered at the frequencies of the individual species. A theoretical model which neglects the effects of high-frequency charge noise correctly predicts the positions of the observed peaks, and gives a reasonably accurate prediction of the size of the frequency-independent background, but gives peak areas that are larger than the observed areas by a factor of two or more. The observed peak widths are roughly consistent with predictions based on nuclear dephasing times of the order of 60 $μ$s. However, there is extra weight at the lowest observed frequencies, which suggests the existence of residual correlations on the scale of 2 ms. We speculate on the source of these discrepancies.
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Submitted 13 August, 2016;
originally announced August 2016.
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Quenching of dynamic nuclear polarization by spin-orbit coupling in GaAs quantum dots
Authors:
John M. Nichol,
Shannon P. Harvey,
Michael D. Shulman,
Arijeet Pal,
Vladimir Umansky,
Emmanuel I. Rashba,
Bertrand I. Halperin,
Amir Yacoby
Abstract:
The central-spin problem, in which an electron spin interacts with a nuclear spin bath, is a widely studied model of quantum decoherence. Dynamic nuclear polarization (DNP) occurs in central spin systems when electronic angular momentum is transferred to nuclear spins and is exploited in spin-based quantum information processing for coherent electron and nuclear spin control. However, the mechanis…
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The central-spin problem, in which an electron spin interacts with a nuclear spin bath, is a widely studied model of quantum decoherence. Dynamic nuclear polarization (DNP) occurs in central spin systems when electronic angular momentum is transferred to nuclear spins and is exploited in spin-based quantum information processing for coherent electron and nuclear spin control. However, the mechanisms limiting DNP remain only partially understood. Here, we show that spin-orbit coupling quenches DNP in a GaAs double quantum dot, even though spin-orbit coupling in GaAs is weak. Using Landau-Zener sweeps, we measure the dependence of the electron spin-flip probability on the strength and direction of in-plane magnetic field, allowing us to distinguish effects of the spin-orbit and hyperfine interactions. To confirm our interpretation, we measure high-bandwidth correlations in the electron spin-flip probability and attain results consistent with a significant spin-orbit contribution. We observe that DNP is quenched when the spin-orbit component exceeds the hyperfine, in agreement with a theoretical model. Our results shed new light on the surprising competition between the spin-orbit and hyperfine interactions in central-spin systems.
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Submitted 18 February, 2015;
originally announced February 2015.
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Suppressing qubit dephasing using real-time Hamiltonian estimation
Authors:
Michael D. Shulman,
Shannon P. Harvey,
John M. Nichol,
Stephen D. Bartlett,
Andrew C. Doherty,
Vladimir Umansky,
Amir Yacoby
Abstract:
Unwanted interaction between a quantum system and its fluctuating environment leads to decoherence and is the primary obstacle to establishing a scalable quantum information processing architecture. Strategies such as environmental and materials engineering, quantum error correction and dynamical decoupling can mitigate decoherence, but generally increase experimental complexity. Here we improve c…
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Unwanted interaction between a quantum system and its fluctuating environment leads to decoherence and is the primary obstacle to establishing a scalable quantum information processing architecture. Strategies such as environmental and materials engineering, quantum error correction and dynamical decoupling can mitigate decoherence, but generally increase experimental complexity. Here we improve coherence in a qubit using real-time Hamiltonian parameter estimation. Using a rapidly converging Bayesian approach, we precisely measure the splitting in a singlet-triplet spin qubit faster than the surrounding nuclear bath fluctuates. We continuously adjust qubit control parameters based on this information, thereby improving the inhomogenously broadened coherence time ($T_{2}^{*}$) from tens of nanoseconds to above 2 $μ$s and demonstrating the effectiveness of Hamiltonian estimation in reducing the effects of correlated noise in quantum systems. Because the technique demonstrated here is compatible with arbitrary qubit operations, it is a natural complement to quantum error correction and can be used to improve the performance of a wide variety of qubits in both metrological and quantum-information-processing applications.
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Submitted 2 May, 2014;
originally announced May 2014.
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Nanoscale Fourier-transform MRI
Authors:
John M. Nichol,
Tyler R. Naibert,
Eric R. Hemesath,
Lincoln J. Lauhon,
Raffi Budakian
Abstract:
We report a method for nanometer-scale pulsed nuclear magnetic resonance imaging and spectroscopy. Periodic radiofrequency pulses are used to create temporal correlations in the statistical polarization of a solid organic sample. The spin density is spatially encoded by applying a series of intense magnetic field gradient pulses generated by focusing electric current through a nanometer-scale meta…
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We report a method for nanometer-scale pulsed nuclear magnetic resonance imaging and spectroscopy. Periodic radiofrequency pulses are used to create temporal correlations in the statistical polarization of a solid organic sample. The spin density is spatially encoded by applying a series of intense magnetic field gradient pulses generated by focusing electric current through a nanometer-scale metal constriction. We demonstrate this technique using a silicon nanowire mechanical oscillator as a magnetic resonance sensor to image 1H spins in a polystyrene sample. We obtain a two-dimensional projection of the sample proton density with approximately 10-nm resolution.
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Submitted 23 May, 2013; v1 submitted 12 February, 2013;
originally announced February 2013.
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Nanomechanical detection of nuclear magnetic resonance using a silicon nanowire oscillator
Authors:
John M. Nichol,
Eric R. Hemesath,
Lincoln J. Lauhon,
Raffi Budakian
Abstract:
We report the use of a silicon nanowire mechanical oscillator as a low-temperature nuclear magnetic resonance force sensor to detect the statistical polarization of 1H spins in polystyrene. Under operating conditions, the nanowire experienced negligible surface-induced dissipation and exhibited a nearly thermally-limited force noise of 1.9 aN^2/Hz in the measurement quadrature. In order to couple…
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We report the use of a silicon nanowire mechanical oscillator as a low-temperature nuclear magnetic resonance force sensor to detect the statistical polarization of 1H spins in polystyrene. Under operating conditions, the nanowire experienced negligible surface-induced dissipation and exhibited a nearly thermally-limited force noise of 1.9 aN^2/Hz in the measurement quadrature. In order to couple the 1H spins to the nanowire oscillator, we have developed a new magnetic resonance force detection protocol which utilizes a nanoscale current-carrying wire to produce large time-dependent magnetic field gradients as well as the rf magnetic field.
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Submitted 16 August, 2011;
originally announced August 2011.