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Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks
Authors:
Elisabetta Corti,
Joaquin Antonio Cornejo Jimenez,
Kham M. Niang,
John Robertson,
Kirsten E. Moselund,
Bernd Gotsmann,
Adrian M. Ionescu,
Siegfried Karg
Abstract:
In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area density and oscillation frequency. Further, the crossbar devices exhibit low variability and extended reliability, hence, enabling experiments on 4-co…
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In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area density and oscillation frequency. Further, the crossbar devices exhibit low variability and extended reliability, hence, enabling experiments on 4-coupled oscillator. We demonstrate the neuromorphic computing capabilities using the phase relation of the oscillators. As a application, we propose to replace digital filtering operation in a convolutional neural network with oscillating circuits. The concept is tested with a VGG13 architecture on the MNIST dataset, achieving performances of 95% in the recognition task.
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Submitted 18 November, 2020;
originally announced November 2020.
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Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors
Authors:
Mari Napari,
Tahmida N. Huq,
David J. Meeth,
Mikko J. Heikkilä,
Kham M. Niang,
Han Wang,
Tomi Iivonen,
Haiyan Wang,
Markku Leskelä,
Mikko Ritala,
Andrew J. Flewitt,
Robert L. Z. Hoye,
Judith L. MacManus-Driscol
Abstract:
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a th…
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High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed by vacuum annealing at 300 C. Detailed characterisation by TEM-EDX and XPS shows that the surface of Cu2O is reduced following Al2O3 deposition and indicates the formation of 1-2 nm thick CuAlO2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al2O3, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.
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Submitted 21 October, 2020;
originally announced October 2020.
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Tail-states induced semiconductor-toconductor like transition under sub-bandgap light excitation in the zinc-tin-oxide photothinfilm transistors
Authors:
Soumen Dhara,
Kham M. Niang,
Andrew J. Flewitt,
Arokia Nathan,
Stephen A. Lynch
Abstract:
We report on a giant persistent photoconductivity (PPC) induced semiconductor-to-conductor like transition in zinc-tin-oxide (ZTO) photo-thinfilm transistors (TFT). The active ZTO channel layer was prepared by remote-plasma reactive sputtering and possesses an amorphous structure. Under subbandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~10 -4 A (a photo-to-dark curren…
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We report on a giant persistent photoconductivity (PPC) induced semiconductor-to-conductor like transition in zinc-tin-oxide (ZTO) photo-thinfilm transistors (TFT). The active ZTO channel layer was prepared by remote-plasma reactive sputtering and possesses an amorphous structure. Under subbandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~10 -4 A (a photo-to-dark current ratio of ~10 7) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits gigantic PPC with long-lasting recovery time, which leads the ZTO compound to undergo a semiconductor-to-conductor like transition. In the present case, the conductivity changes over six orders of magnitude, from ~10-7 to 0.92 Ω -1cm-1. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep-states and tail-states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-gap tail-states of the ZTO in the giant PPC, while deep-states contribute to mild PPC.
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Submitted 18 September, 2020;
originally announced September 2020.
