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Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
Authors:
** Liu,
Kumarasiri Konthasinghe,
Marcelo Davanco,
John Lawall,
Vikas Anant,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
** Dong Song,
Ben Ma,
Ze Sheng Chen,
Hai Qiao Ni,
Zhi Chuan Niu,
Kartik Srinivasan
Abstract:
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optic…
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Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.
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Submitted 26 October, 2017;
originally announced October 2017.
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Second-order correlation function from asymmetric to symmetric transitions due to spectrally indistinguishable biexciton cascade emission
Authors:
X. F. Wu,
X. M. Dou,
K. Ding,
P. Y. Zhou,
H. Q. Ni,
Z. C. Niu,
H. J. Zhu,
D. S. Jiang,
C. L. Zhao,
B. Q. Sun
Abstract:
We report the observed photon bunching statistics of biexciton cascade emission at zero time delay in single quantum dots by second-order correlation function measurements under continuous wave excitation. It is found that the bunching phenomenon is independent of the biexciton binding energy when it varies from 0.59 meV to nearly zero. The photon bunching takes place when the exciton photon is no…
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We report the observed photon bunching statistics of biexciton cascade emission at zero time delay in single quantum dots by second-order correlation function measurements under continuous wave excitation. It is found that the bunching phenomenon is independent of the biexciton binding energy when it varies from 0.59 meV to nearly zero. The photon bunching takes place when the exciton photon is not spectrally distinguishable from biexciton photon, and either of them can trigger the start in a Hanbury-Brown and Twiss setup. However, if the exciton energy is spectrally distinguishable from the biexciton the photon statistics becomes asymmetric and a cross-bunching lineshape is obtained. The theoretical calculations based on a model of three-level rate-equation analysis are consistent with the result of second-order correlation function measurements.
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Submitted 22 September, 2015;
originally announced September 2015.
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Coherent versus Incoherent Light Scattering from a Quantum Dot
Authors:
K. Konthasinghe,
J. Walker,
M. Peiris,
C. K. Shih,
Y. Yu,
M. F. Li,
J. F. He,
L. J. Wang,
H. Q. Ni,
Z. C. Niu,
A. Muller
Abstract:
We analyze the light scattered by a single InAs quantum dot interacting with a resonant continuous-wave laser. High resolution spectra reveal clear distinctions between coherent and incoherent scattering, with the laser intensity spanning over four orders of magnitude. We find that the fraction of coherently scattered photons can approach unity under sufficiently weak or detuned excitation, ruling…
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We analyze the light scattered by a single InAs quantum dot interacting with a resonant continuous-wave laser. High resolution spectra reveal clear distinctions between coherent and incoherent scattering, with the laser intensity spanning over four orders of magnitude. We find that the fraction of coherently scattered photons can approach unity under sufficiently weak or detuned excitation, ruling out pure dephasing as a relevant decoherence mechanism. We show how spectral diffusion shapes spectra, correlation functions, and phase-coherence, concealing the ideal radiatively-broadened two-level system described by Mollow.
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Submitted 20 June, 2012;
originally announced June 2012.
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Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field
Authors:
X. M. Dou,
B. Q. Sun,
D. S. Jiang,
H. Q. Ni,
Z. C. Niu
Abstract:
The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show that the electron-spin relaxation is clearly divided into two different temperature regimes: (i) T < 50 K, spin relaxation depends on the dynamical nuclear spin…
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The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show that the electron-spin relaxation is clearly divided into two different temperature regimes: (i) T < 50 K, spin relaxation depends on the dynamical nuclear spin polarization (DNSP) and is approximately temperature-independent, as predicted by Merkulov et al. (ii) T > about 50 K, spin relaxation speeds up with increasing temperature. A model of two LO phonon scattering process coupled with hyperfine interaction is proposed to account for the accelerated electron spin relaxation at higher temperatures.
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Submitted 5 January, 2012;
originally announced January 2012.
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Measurements of a fast nuclear spin dynamics in a single InAs quantum dot with positively charged exciton
Authors:
X. M. Dou,
B. Q. Sun,
D. S. Jiang,
H. Q. Ni,
Z. C. Niu
Abstract:
By using highly time-resolved spectroscopy with an alternative σ+/σ - laser pulse modulation technique, we are able to measure the fast buildup and decay times of the dynamical nuclear spin polarization (DNSP) at 5 K for a single InAs quantum dot (QD) with positively charged exciton. It is shown that the nuclear dipole-dipole interaction can efficiently depolarize DNSP with a typical time constant…
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By using highly time-resolved spectroscopy with an alternative σ+/σ - laser pulse modulation technique, we are able to measure the fast buildup and decay times of the dynamical nuclear spin polarization (DNSP) at 5 K for a single InAs quantum dot (QD) with positively charged exciton. It is shown that the nuclear dipole-dipole interaction can efficiently depolarize DNSP with a typical time constant of 500 μs in the absence of external magnetic field. By using an external field of 8 mT to suppress the nuclear dipolar interaction, the decay time turns to be mainly induced by interaction with unpaired electron and extends to about 5 ms. In addition, it is found that the time constant of hole-induced depolarization of nuclear spin is about 112 ms.
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Submitted 5 January, 2012;
originally announced January 2012.
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Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well
Authors:
L. F. Han,
Y. G. Zhu,
X. H. Zhang,
P. H. Tan,
H. Q. Ni,
Z. C. Niu
Abstract:
Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically-designed GaAs quantum well comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on sp…
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Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically-designed GaAs quantum well comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on spin relaxation. D'yakonov-Perel' (DP) mechanism has been revealed to be the dominant contribution for spin relaxation in GaAs/AlGaAs QWs. The spin relaxation time exhibits non-monotonic dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron Coulomb scattering. Our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin Bloch equation approach.
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Submitted 29 October, 2010;
originally announced October 2010.
