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A quantum dot coupled to a suspended-beam mechanical resonator: from the unresolved- to the resolved-sideband regime
Authors:
Clemens Spinnler,
Giang N. Nguyen,
Ying Wang,
Marcel Erbe,
Alisa Javadi,
Liang Zhai,
Sven Scholz,
Andreas D. Wieck,
Arne Ludwig,
Peter Lodahl,
Leonardo Midolo,
Richard J. Warburton
Abstract:
We present experiments in which self-assembled InAs quantum dots are coupled to a thin, suspended-beam GaAs resonator. The quantum dots are driven resonantly and the resonance fluorescence is detected. The narrow quantum-dot linewidths, just a factor of three larger than the transform limit, result in a high sensitivity to the mechanical motion. We show that one quantum dot couples to eight mechan…
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We present experiments in which self-assembled InAs quantum dots are coupled to a thin, suspended-beam GaAs resonator. The quantum dots are driven resonantly and the resonance fluorescence is detected. The narrow quantum-dot linewidths, just a factor of three larger than the transform limit, result in a high sensitivity to the mechanical motion. We show that one quantum dot couples to eight mechanical modes spanning a frequency range from $30$ to $600~\mathrm{MHz}$: one quantum dot provides an extensive characterisation of the mechanical resonator. The coupling spans the unresolved-sideband to the resolved-sideband regimes. Finally, we present the first detection of thermally-driven phonon sidebands (at $4.2~\mathrm{K}$) in the resonance-fluoresence spectrum.
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Submitted 9 November, 2023;
originally announced November 2023.
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A single-photon emitter coupled to a phononic-crystal resonator in the resolved-sideband regime
Authors:
Clemens Spinnler,
Giang N. Nguyen,
Ying Wang,
Liang Zhai,
Alisa Javadi,
Marcel Erbe,
Sven Scholz,
Andreas D. Wieck,
Arne Ludwig,
Peter Lodahl,
Leonardo Midolo,
Richard J. Warburton
Abstract:
A promising route towards the heralded creation and annihilation of single-phonons is to couple a single-photon emitter to a mechanical resonator. The challenge lies in reaching the resolved-sideband regime with a large coupling rate and a high mechanical quality factor. We achieve all of this by coupling self-assembled InAs quantum dots to a small-mode-volume phononic-crystal resonator with mecha…
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A promising route towards the heralded creation and annihilation of single-phonons is to couple a single-photon emitter to a mechanical resonator. The challenge lies in reaching the resolved-sideband regime with a large coupling rate and a high mechanical quality factor. We achieve all of this by coupling self-assembled InAs quantum dots to a small-mode-volume phononic-crystal resonator with mechanical frequency $Ω_\mathrm{m}/2π= 1.466~\mathrm{GHz}$ and quality factor $Q_\mathrm{m} = 2.1\times10^3$. Thanks to the high coupling rate of $g_\mathrm{ep}/2π= 2.9~\mathrm{MHz}$, and by exploiting a matching condition between the effective Rabi and mechanical frequencies, we are able to observe the interaction between the two systems. Our results represent a major step towards quantum control of the mechanical resonator via a single-photon emitter.
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Submitted 9 November, 2023;
originally announced November 2023.
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Enhanced Electron Spin Coherence in a GaAs Quantum Emitter
Authors:
Giang N. Nguyen,
Clemens Spinnler,
Mark R. Hogg,
Liang Zhai,
Alisa Javadi,
Carolin A. Schrader,
Marcel Erbe,
Marcus Wyss,
Julian Ritzmann,
Hans-Georg Babin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementi…
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A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementing an all-optical nuclear-spin cooling scheme on a GaAs quantum dot. The electron-spin coherence time increases 156-fold from $T_2^*$ = 3.9 ns to 0.608 $μ$s. The cooling scheme depends on a non-collinear term in the hyperfine interaction. The results show that such a term is present even though the strain is low and no external stress is applied. Our work highlights the potential of optically-active GaAs quantum dots as fast, highly coherent spin-photon interfaces.
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Submitted 5 July, 2023;
originally announced July 2023.
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Structural symmetry-breaking to explain radiative Auger transitions in self-assembled quantum dots
Authors:
Krzysztof Gawarecki,
Clemens Spinnler,
Liang Zhai,
Giang N. Nguyen,
Arne Ludwig,
Richard J. Warburton,
Matthias C. Löbl,
Doris E. Reiter,
Paweł Machnikowski
Abstract:
The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of these lines is a combination of Coulomb interaction and symmetry-breaking in the quantum dot. In this paper, we present measurements of such radiative Auger lines…
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The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of these lines is a combination of Coulomb interaction and symmetry-breaking in the quantum dot. In this paper, we present measurements of such radiative Auger lines for a range of InGaAs/GaAs self-assembled quantum dots and use a tight-binding model with a configuration interaction approach to explain their appearance. Introducing a composition fluctuation cluster in the dot, our calculations show excellent agreement with measurements. We relate our findings to group theory explaining the origin of the additional emission lines. Our model and results give insight into the interplay between the symmetry breaking in a quantum dot and the position and strength of the radiative Auger lines.
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Submitted 25 August, 2022;
originally announced August 2022.
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Quantum Interference of Identical Photons from Remote GaAs Quantum Dots
Authors:
Liang Zhai,
Giang N. Nguyen,
Clemens Spinnler,
Julian Ritzmann,
Matthias C. Löbl,
Andreas D. Wieck,
Arne Ludwig,
Alisa Javadi,
Richard J. Warburton
Abstract:
Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indi…
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Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indistinguishable single photons. Semiconductor quantum dots are bright and fast sources of coherent single-photons. For applications, a significant roadblock is the poor quantum coherence upon interfering single photons created by independent quantum dots. Here, we demonstrate two-photon interference with near-unity visibility ($93.0\pm0.8$)\% using photons from two completely separate GaAs quantum dots. The experiment retains all the emission into the zero-phonon-line -- only the weak phonon-sideband is rejected -- and temporal post-selection is not employed. Exploiting the quantum interference, we demonstrate a photonic controlled-not circuit and an entanglement with fidelity ($85.0\pm 1.0$)\% between photons of different origins. The two-photon interference visibility is high enough that the entanglement fidelity is well above the classical threshold. The high mutual-coherence of the photons stems from high-quality materials, a diode-structure, and the relatively large quantum dot size. Our results establish a platform, GaAs QDs, for creating coherent single photons in a scalable way.
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Submitted 14 February, 2023; v1 submitted 7 June, 2021;
originally announced June 2021.
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Optically driving the radiative Auger transition
Authors:
Clemens Spinnler,
Liang Zhai,
Giang N. Nguyen,
Julian Ritzmann,
Andreas D. Wieck,
Arne Ludwig,
Alisa Javadi,
Doris E. Reiter,
Paweł Machnikowski,
Richard J. Warburton,
Matthias C. Löbl
Abstract:
In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and a…
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In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and at infrared frequencies as shake-up lines in two-dimensional systems. So far, all the work on the radiative Auger process has focussed on detecting the spontaneous emission. However, the fact that the radiative Auger process leads to photon emission suggests that the transition can also be optically excited. In such an inverted radiative Auger process, excitation would correspond to simultaneous photon absorption and electronic de-excitation. Here, we demonstrate optical driving of the radiative Auger transition on a trion in a semiconductor quantum dot. The radiative Auger and the fundamental transition together form a $Λ$-system. On driving both transitions of this $Λ$-system simultaneously, we observe a reduction of the fluorescence signal by up to $70\%$. Our results demonstrate a type of optically addressable transition connecting few-body Coulomb interactions to quantum optics. The results open up the possibility of carrying out THz spectroscopy on single quantum emitters with all the benefits of optics: coherent laser sources, efficient and fast single-photon detectors. In analogy to optical control of an electron spin, the $Λ$-system between the radiative Auger and the fundamental transitions allows optical control of the emitters' orbital degree of freedom.
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Submitted 7 May, 2021;
originally announced May 2021.
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Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells
Authors:
G. N. Nguyen,
A. R. Korsch,
M. Schmidt,
C. Ebler,
P. A. Labud,
R. Schott,
P. Lochner,
F. Brinks,
A. D. Wieck,
A. Ludwig
Abstract:
Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this probl…
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Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this problem and find that reconditioning the aluminum cell by overheating can lead to a full recovery of the anomalies in photoluminescence and capacitance-voltage measurements, leading to excellent low noise heterostructures. Furthermore, we propose a method to sense photo-induced trap charges using capacitance-voltage spectroscopy on self-assembled quantum dots. Excitation energy-dependent ionization of defect centers leads to shifts in capacitance-voltage spectra which can be used to determine the charge density of photo-induced trap charges via 1D band structure simulations. This method can be performed on frequently used quantum dot diode structures.
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Submitted 30 September, 2020; v1 submitted 29 September, 2020;
originally announced September 2020.
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Low-Noise GaAs Quantum Dots for Quantum Photonics
Authors:
Liang Zhai,
Matthias C. Löbl,
Giang N. Nguyen,
Julian Ritzmann,
Alisa Javadi,
Clemens Spinnler,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-bas…
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Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an $n$-$i$-$p$-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.
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Submitted 24 September, 2020; v1 submitted 28 February, 2020;
originally announced March 2020.
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Radiative Auger Process in the Single-Photon Limit
Authors:
Matthias C. Löbl,
Clemens Spinnler,
Alisa Javadi,
Liang Zhai,
Giang N. Nguyen,
Julian Ritzmann,
Leonardo Midolo,
Peter Lodahl,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in si…
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In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in single quantum dots. For a trion, a photon is created on electron-hole recombination, leaving behind a single electron. The radiative Auger process promotes this additional (Auger) electron to a higher shell of the quantum dot. We show that the radiative Auger effect is a powerful probe of this single electron: the energy separations between the resonance fluorescence and the radiative Auger emission directly measure the single-particle splittings of the electronic states in the quantum dot with high precision. In semiconductors, these single-particle splittings are otherwise hard to access by optical means as particles are excited typically in pairs, as excitons. After the radiative Auger emission, the Auger carrier relaxes back to the lowest shell. Going beyond the original theoretical proposals, we show how applying quantum optics techniques to the radiative Auger photons gives access to the single-electron dynamics, notably relaxation and tunneling. This is also hard to access by optical means: even for quasi-resonant $p$-shell excitation, electron relaxation takes place in the presence of a hole, complicating the relaxation dynamics. The radiative Auger effect can be exploited in other semiconductor nanostructures and quantum emitters in the solid state to determine the energy levels and the dynamics of a single carrier.
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Submitted 16 January, 2021; v1 submitted 26 November, 2019;
originally announced November 2019.