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Atomic Defect-Aware Physical Design of Silicon Dangling Bond Logic on the H-Si(100)2x1 Surface
Authors:
Marcel Walter,
Jeremiah Croshaw,
Samuel Sze Hang Ng,
Konrad Walus,
Robert Wolkow,
Robert Wille
Abstract:
Although fabrication capabilities of Silicon Dangling Bonds have rapidly advanced from manual labor-driven laboratory work to automated manufacturing in just recent years, sub-nanometer substrate defects still pose a hindrance to production due to the need for atomic precision. In essence, unpassivated or missing surface atoms, contaminants, and structural deformations disturb the fabricated logic…
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Although fabrication capabilities of Silicon Dangling Bonds have rapidly advanced from manual labor-driven laboratory work to automated manufacturing in just recent years, sub-nanometer substrate defects still pose a hindrance to production due to the need for atomic precision. In essence, unpassivated or missing surface atoms, contaminants, and structural deformations disturb the fabricated logic or prevent its realization altogether. Moreover, design automation techniques in this domain have not yet adopted any defect-aware behavior to circumvent the present obstacles. In this paper, we derive a surface defect model for design automation from experimentally verified defect types that we apply to identify sensitivities in an established gate library in an effort to generate more robust designs. Furthermore, we present an automatic placement and routing algorithm that considers scanning tunneling microscope data obtained from physical experiments to lay out dot-accurate circuitry that is resilient against the presence of atomic surface defects. This culminates in a holistic evaluation on surface data of varying defect rates that enables us to quantify the severity of such defects. We project that fabrication capabilities must achieve defect rates of around 0.1 %, if charged defects can be completely eliminated, or < 0.1 %, otherwise. This realization sets the pace for future efforts to scale up this promising circuit technology.
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Submitted 17 November, 2023;
originally announced November 2023.
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QuickSim: Efficient and Accurate Physical Simulation of Silicon Dangling Bond Logic
Authors:
Jan Drewniok,
Marcel Walter,
Samuel Sze Hang Ng,
Konrad Walus,
Robert Wille
Abstract:
Silicon Dangling Bonds have established themselves as a promising competitor in the field of beyond-CMOS technologies. Their integration density and potential for energy dissipation advantages of several orders of magnitude over conventional circuit technologies sparked the interest of academia and industry alike. While fabrication capabilities advance rapidly and first design automation methodolo…
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Silicon Dangling Bonds have established themselves as a promising competitor in the field of beyond-CMOS technologies. Their integration density and potential for energy dissipation advantages of several orders of magnitude over conventional circuit technologies sparked the interest of academia and industry alike. While fabrication capabilities advance rapidly and first design automation methodologies have been proposed, physical simulation effectiveness has yet to keep pace. Established algorithms in this domain either suffer from exponential runtime behavior or subpar accuracy levels. In this work, we propose a novel algorithm for the physical simulation of Silicon Dangling Bond systems based on statistical methods that offers both a time-to-solution and an accuracy advantage over the state of the art by more than one order of magnitude and a factor of more than three, respectively, as demonstrated by an exhaustive experimental evaluation.
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Submitted 6 March, 2023;
originally announced March 2023.
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Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness
Authors:
Samuel S. H. Ng,
Jeremiah Croshaw,
Marcel Walter,
Robert Wille,
Robert Wolkow,
Konrad Walus
Abstract:
Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis o…
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Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of $32\times10^3\,\text{nm}^{2}$ -- orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the $10\,\text{nm}$ scale and beyond. The formulation is validated by implementing it into SiQAD's simulation engine and computationally reproducing experiments on multiple defect types, revealing a high level of accuracy. The new capability is applied towards studying the tolerance of several established logic gates against the introduction of a single nearby defect to establish the corresponding minimum required clearance. These findings are compared against existing metrics to form a foundation for logic robustness studies.
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Submitted 7 August, 2023; v1 submitted 16 November, 2022;
originally announced November 2022.
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Automated Atomic Silicon Quantum Dot Circuit Design via Deep Reinforcement Learning
Authors:
Robert Lupoiu,
Samuel S. H. Ng,
Jonathan A. Fan,
Konrad Walus
Abstract:
Robust automated design tools are crucial for the proliferation of any computing technology. We introduce the first automated design tool for the silicon dangling bond quantum dot computing technology, which is an extremely versatile and flexible single-atom computing circuitry framework. The automated designer is capable of navigating the complex, hyperdimensional design spaces of arbitrarily siz…
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Robust automated design tools are crucial for the proliferation of any computing technology. We introduce the first automated design tool for the silicon dangling bond quantum dot computing technology, which is an extremely versatile and flexible single-atom computing circuitry framework. The automated designer is capable of navigating the complex, hyperdimensional design spaces of arbitrarily sized design areas and truth tables by employing a tabula rasa double-deep Q-learning reinforcement learning algorithm. Robust policy convergence is demonstrated for a wide range of two-input, one-output logic circuits and a two-input, two-output half-adder, designed with an order of magnitude fewer SiDBs in several orders of magnitude less time than the only other half-adder demonstrated in the literature. We anticipate that reinforcement learning-based automated design tools will accelerate the development of the SiDB quantum dot computing technology, leading to its eventual adoption in specialized computing hardware.
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Submitted 13 April, 2022;
originally announced April 2022.
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PoisSolver: a Tool for Modelling Silicon Dangling Bond Clocking Networks
Authors:
Hsi Nien Chiu,
Samuel S. H. Ng,
Jacob Retallick,
Konrad Walus
Abstract:
Advancements in the fabrication of silicon dangling bonds (SiDBs) reveal a potential platform for clocked field coupled nanocomputing structures. This work introduces PoisSolver, a finite element simulator for investigating clocked SiDB systems in the SiQAD design tool. Three clocking schemes borrowed from prior work on quantum-dot cellular automata are examined as potential building blocks for a…
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Advancements in the fabrication of silicon dangling bonds (SiDBs) reveal a potential platform for clocked field coupled nanocomputing structures. This work introduces PoisSolver, a finite element simulator for investigating clocked SiDB systems in the SiQAD design tool. Three clocking schemes borrowed from prior work on quantum-dot cellular automata are examined as potential building blocks for a general clocking framework for SiDB circuits. These clocking schemes are implemented in SiQAD, and power estimates are performed with geometrically agnostic methods to characterise each clocking scheme. Clocking schemes using a 14 nm technology node are found to dissipate 10-100 uW cm-2 at 1 GHz and 1-10 W cm-2 at 1 THz.
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Submitted 24 February, 2020;
originally announced February 2020.