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Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
Authors:
S. Tyler,
J. Newland,
P. Hepworth,
A. Wijesekara,
I. R. Gullick,
M. L. Markham,
M. E. Newton,
B. L. Green
Abstract:
Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with…
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Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with one processed by inductively-coupled plasma reactive ion etching (ICP-RIE), and observe an increased median T2 of 355 microseconds in the CMP-processed samples for 15NV centres implanted and annealed under identical conditions.
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Submitted 17 May, 2024;
originally announced May 2024.
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Phosphorescence and donor-acceptor pair recombination in laboratory-grown diamonds
Authors:
Jiahui Zhao,
Ben L. Green,
Ben G. Breeze,
Mark E. Newton
Abstract:
Intense "blue-green" phosphorescence is commonly observed in near colourless lab-grown high-pressure high-temperature (HPHT) diamonds following optical excitation at or above the indirect bandgap. We have employed a holistic combination of optically-excited time-resolved techniques (in addition to standard spectroscopic characterisation techniques) to study the physics of this long-lived phosphore…
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Intense "blue-green" phosphorescence is commonly observed in near colourless lab-grown high-pressure high-temperature (HPHT) diamonds following optical excitation at or above the indirect bandgap. We have employed a holistic combination of optically-excited time-resolved techniques (in addition to standard spectroscopic characterisation techniques) to study the physics of this long-lived phosphorescence and understand luminescence-related charge transfer processes.
It is shown that the properties of the broad "blue-green" luminescence and phosphorescence band can be fully explained by emission from neutral substitutional nitrogen-boron donor-acceptor pairs ($\text{N}_\text{S}^0$...$\text{B}_\text{S}^0$) , once the configurational change between charge states is considered, and both tunneling between defects and thermal ionization of donors and acceptors is considered. Significant concentrations of metastable $\text{N}_\text{S}^-$, are identified after optical excitation at or above the indirect bandgap. $\text{N}_\text{S}^-$ is much shallower ($\sim$0.2 eV) than previously thought and plays a key role in resetting the $\text{N}_\text{S}^0$...$\text{B}_\text{S}^0$ donor-acceptor pairs.
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Submitted 2 June, 2023;
originally announced June 2023.
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Sub-nanotesla magnetometry with a fibre-coupled diamond sensor
Authors:
R. L. Patel,
L. Q. Zhou,
A. C. Frangeskou,
G. A. Stimpson,
B. G. Breeze,
A. Nikitin,
M. W. Dale,
E. C. Nichols,
W. Thornley,
B. L. Green,
M. E. Newton,
A. M. Edmonds,
M. L. Markham,
D. J. Twitchen,
G. W. Morley
Abstract:
Sensing small magnetic fields is relevant for many applications ranging from geology to medical diagnosis. We present a fiber-coupled diamond magnetometer with a sensitivity of (310 $\pm$ 20) pT$/\sqrt{\text{Hz}}$ in the frequency range of 10-150 Hz. This is based on optically detected magnetic resonance of an ensemble of nitrogen vacancy centers in diamond at room temperature. Fiber coupling mean…
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Sensing small magnetic fields is relevant for many applications ranging from geology to medical diagnosis. We present a fiber-coupled diamond magnetometer with a sensitivity of (310 $\pm$ 20) pT$/\sqrt{\text{Hz}}$ in the frequency range of 10-150 Hz. This is based on optically detected magnetic resonance of an ensemble of nitrogen vacancy centers in diamond at room temperature. Fiber coupling means the sensor can be conveniently brought within 2 mm of the object under study.
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Submitted 19 February, 2020;
originally announced February 2020.
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Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond
Authors:
Philip L. Diggle,
Ulrika F. S. D'Haenens-Johansson,
Ben L. Green,
Christopher M. Welbourn,
Thu Nhi Tran Thi,
Andrey Katrusha,
Wuyi Wang,
Mark E. Newton
Abstract:
Large (> 100 mm$^3$), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we examine a HPHT sample of good crystalline perfection, containing less than 1 ppb (part per billion carbon atoms) of boron impurity atoms in the {001} growth sector and only tens of ppb of nitrogen impurity atoms. It is sho…
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Large (> 100 mm$^3$), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we examine a HPHT sample of good crystalline perfection, containing less than 1 ppb (part per billion carbon atoms) of boron impurity atoms in the {001} growth sector and only tens of ppb of nitrogen impurity atoms. It is shown that the boundaries between {111} and {113} growth sectors are decorated by negatively charged nitrogen vacancy centres (NV$^-$): no decoration is observed at any other type of growth sector interface. This decoration can be used to calculated the relative {111} and {113} growth rates. The bulk (001) sector contains concentrations of luminescent point defects (excited with 488 and 532 nm wavelengths) below 10$^{11}$ cm$^{-3}$ (10$^{-3}$ ppb). We observe the negatively charged silicon-vacancy (SiV$^-$) defect in the bulk {111} sectors along with a zero phonon line emission associated with a nickel defect at 884 nm (1.40 eV). No preferential orientation is seen for either NV$^-$ or SiV$^-$ defects, but the nickel related defect is oriented with its trigonal axis along the <111> sector growth direction. Since the NV$^-$ defect is expected to readily re-orientate at HPHT diamond growth temperatures, no preferential orientation is expected for this defect but the lack of preferential orientation of SiV$^-$ in {111} sectors is not explained.
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Submitted 18 February, 2020;
originally announced February 2020.
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Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
Authors:
B G Breeze,
C J Meara,
X X Wu,
C P Michaels,
R Gupta,
P L Diggle,
M W Dale,
B L Cann,
T Ardon,
U F S D'Haenens-Johansson,
I Friel,
M J Rayson,
P R Briddon,
J P Goss,
M E Newton,
B L Green
Abstract:
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to…
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We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to the loss of SiV0/- and gain in the optically-inactive SiV2-.
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Submitted 5 February, 2020;
originally announced February 2020.
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Laser writing of individual atomic defects in a crystal with near-unity yield
Authors:
Yu-Chen Chen,
Benjamin Griffiths,
Laiyi Weng,
Shannon Nicley,
Shazeaa N. Ishmael,
Yashna Lekhai,
Sam Johnson,
Colin J. Stephen,
Ben L. Green,
Gavin W. Morley,
Mark E. Newton,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin de…
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Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin degrees of freedom with potential for applications in advanced sensing and computing. Here we demonstrate a method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy using laser processing with online fluorescence feedback. This method provides a new tool for the fabrication of engineered materials and devices for quantum technologies and offers insight into the diffusion dynamics of point defects in solids.
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Submitted 11 July, 2018;
originally announced July 2018.
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Three-dimensional solid-state qubit arrays with long-lived spin coherence
Authors:
C. J. Stephen,
B. L. Green,
Y. N. D. Lekhai,
L. Weng,
P. Hill,
S. Johnson,
A. C. Frangeskou,
P. L. Diggle,
M. J. Strain,
E. Gu,
M. E. Newton,
J. M. Smith,
P. S. Salter,
G. W. Morley
Abstract:
Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This woul…
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Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This would allow 5 million qubits inside a commercially available 4.5x4.5x0.5 mm diamond based on five nuclear qubits per NVC and allowing $(10 μm)^3$ per NVC to leave room for our laser-written electrical control. The spin coherence times we measure are an order of magnitude longer than previous laser-written qubits and at least as long as non-laser-written NVC. As well as NVC quantum computing, quantum communication and nanoscale sensing could benefit from the same platform. Our approach could also be extended to other qubits in diamond and silicon carbide.
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Submitted 10 July, 2018;
originally announced July 2018.
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Electronic structure of the neutral silicon-vacancy center in diamond
Authors:
B. L. Green,
M. W. Doherty,
E. Nako,
N. B. Manson,
U. F. S. D'Haenens-Johansson,
S. D. Williams,
D. J. Twitchen,
M. E. Newton
Abstract:
The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photolumine…
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The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photoluminescence spectroscopy of SiV0 under uniaxial stress, we find the previous excited electronic structure of a single 3A1u state is incorrect, and identify instead a coupled 3Eu - 3A2u system, the lower state of which has forbidden optical emission at zero stress and so efficiently decreases the total emission of the defect: we propose a solution employing finite strain to form the basis of a spin-photon interface. Isotopic enrichment definitively assigns the 976 nm transition associated with the defect to a local mode of the silicon atom.
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Submitted 24 April, 2018;
originally announced April 2018.
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The neutral silicon-vacancy center in diamond: spin polarization and lifetimes
Authors:
B. L. Green,
S. Mottishaw,
B. G. Breeze,
A. M. Edmonds,
U. F. S. D'Haenens-Johansson,
M. W. Doherty,
S. D. Williams,
D. J. Twitchen,
M. E. Newton
Abstract:
We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin…
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We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin relaxation limit of $T_1>25~\mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $\mathrm{SiV^{0}}$ and $\mathrm{NV^{-}}$ within the same optically-addressed volume, and $\mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $\mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology.
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Submitted 29 May, 2017;
originally announced May 2017.
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Electron paramagnetic resonance and photochromism of $\mathrm{N}_{3}\mathrm{V}^{0}$ in diamond
Authors:
B. L. Green,
B. G. Breeze,
M. E. Newton
Abstract:
The defect in diamond formed by a vacancy surrounded by three nearest-neighbor nitrogen atoms and one carbon atom, $\mathrm{N}_{3}\mathrm{V}$, is found in $\approx98\%$ of natural diamonds. Despite $\mathrm{N}_{3}\mathrm{V}^{0}$ being the earliest electron paramagnetic resonance spectrum observed in diamond, to date no satisfactory simulation of the spectrum for an arbitrary magnetic field directi…
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The defect in diamond formed by a vacancy surrounded by three nearest-neighbor nitrogen atoms and one carbon atom, $\mathrm{N}_{3}\mathrm{V}$, is found in $\approx98\%$ of natural diamonds. Despite $\mathrm{N}_{3}\mathrm{V}^{0}$ being the earliest electron paramagnetic resonance spectrum observed in diamond, to date no satisfactory simulation of the spectrum for an arbitrary magnetic field direction has been produced due to its complexity. In this work, $\mathrm{N}_{3}\mathrm{V}^{0}$ is identified in $^{15}\mathrm{N}$-doped synthetic diamond following irradiation and annealing. The $\mathrm{^{15}N}_{3}\mathrm{V}^{0}$ spin Hamiltonian parameters are revised and used to refine the parameters for $\mathrm{^{14}N}_{3}\mathrm{V}^{0}$, enabling the latter to be accurately simulated and fitted for an arbitrary magnetic field direction. Study of $\mathrm{^{15}N}_{3}\mathrm{V}^{0}$ under excitation with green light indicates charge transfer between $\mathrm{N}_{3}\mathrm{V}$ and $\mathrm{N_s}$. It is argued that this charge transfer is facilitated by direct ionization of $\mathrm{N}_{3}\mathrm{V}^{-}$, an as-yet unobserved charge state of $\mathrm{N}_{3}\mathrm{V}$.
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Submitted 9 February, 2017;
originally announced February 2017.
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All-optical hyperpolarization of electron and nuclear spins in diamond
Authors:
Ben L. Green,
Ben G. Breeze,
Gregory J. Rees,
John V. Hanna,
Jyh-Pin Chou,
Viktor Ivády,
Adam Gali,
Mark E. Newton
Abstract:
Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of $^{13}\mathrm{C}$ and $^{15}\mathrm{N}$ in $^{15}\mathrm{N}$-doped diamond. $^{15}\mathrm{N}$ polarization enhancements up to $-2000$ above thermal equilibrium are observed in the paramagnetic system…
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Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of $^{13}\mathrm{C}$ and $^{15}\mathrm{N}$ in $^{15}\mathrm{N}$-doped diamond. $^{15}\mathrm{N}$ polarization enhancements up to $-2000$ above thermal equilibrium are observed in the paramagnetic system $\mathrm{N_s}^{0}$. Nuclear spin polarization is shown to diffuse to bulk $^{13}\mathrm{C}$ with NMR enhancements of $-200$ at room temperature and $-500$ at $\mathrm{240~K}$, enabling a route to microwave-free high-sensitivity NMR study of biological samples in ambient conditions.
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Submitted 13 February, 2017; v1 submitted 12 October, 2016;
originally announced October 2016.
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Laser writing of coherent colour centres in diamond
Authors:
Yu-Chen Chen,
Patrick S. Salter,
Sebastian Knauer,
Laiyi Weng,
Angelo C. Frangeskou,
Colin J. Stephen,
Philip R. Dolan,
Sam Johnson,
Ben L. Green,
Gavin W. Morley,
Mark E. Newton,
John G. Rarity,
Martin J. Booth,
Jason M. Smith
Abstract:
Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an essential element of device fabrication. Here we report the controlled generation of single nitrogen-vacancy (NV) centres in diamond using laser writing. The use…
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Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an essential element of device fabrication. Here we report the controlled generation of single nitrogen-vacancy (NV) centres in diamond using laser writing. The use of aberration correction in the writing optics allows precise positioning of vacancies within the diamond crystal, and subsequent annealing produces single NV centres with up to 45% success probability, within about 200 nm of the desired position. Selected NV centres fabricated by this method display stable, coherent optical transitions at cryogenic temperatures, a pre-requisite for the creation of distributed quantum networks of solid-state qubits. The results illustrate the potential of laser writing as a new tool for defect engineering in quantum technologies.
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Submitted 16 June, 2016;
originally announced June 2016.
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Electron paramagnetic resonance of the $\mathrm{N_{2}V^{-}}$ defect in $\mathrm{^{15}N}$-doped synthetic diamond
Authors:
Ben L. Green,
Matthew W. Dale,
Mark E. Newton,
David Fisher
Abstract:
Nitrogen is the dominant impurity in the majority of natural and synthetic diamonds, and the family of nitrogen vacancy-type ($\mathrm{N_{n}V}$) defects are crucial in our understanding of defect dynamics in these diamonds. A significant gap is the lack of positive identification of $\mathrm{N_{2}V}^{-}$, the dominant charge state of $\mathrm{N_{2}V}$, in diamond that contains a significant concen…
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Nitrogen is the dominant impurity in the majority of natural and synthetic diamonds, and the family of nitrogen vacancy-type ($\mathrm{N_{n}V}$) defects are crucial in our understanding of defect dynamics in these diamonds. A significant gap is the lack of positive identification of $\mathrm{N_{2}V}^{-}$, the dominant charge state of $\mathrm{N_{2}V}$, in diamond that contains a significant concentration of electron donors. In this paper we employ isotopically-enriched diamond to identify the EPR spectrum associated with $^{15}\mathrm{N_{2}V}^{-}$ and use the derived spin Hamiltonian parameters to identify $^{14}\mathrm{N_{2}V}^{-}$ in a natural isotopic abundance sample. The electronic wavefunction of the $\mathrm{N_{2}V^{-}}$ ground state and previous lack of identification is discussed. The $\mathrm{N_{2}V}^{-}$ EPR spectrum intensity is shown to correlate with H2 optical absorption over an order of magnitude in concentration.
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Submitted 14 October, 2015; v1 submitted 24 July, 2015;
originally announced July 2015.
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Production of oriented nitrogen-vacancy color centers in synthetic diamond
Authors:
A. M. Edmonds,
U. F. S. D'Haenens-Johansson,
M. E. Newton,
K. -M. C. Fu,
C. Santori,
R. G. Beausoleil,
D. J. Twitchen,
M. L. Markham
Abstract:
The negatively charged nitrogen-vacancy (NV-) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically < 0.5 %) incorporated during homoepitaxial diamond growth by Chemical Vapor Deposition (CVD) is in the form of undecorated NV- centers. Furthermore, studies on CVD dia…
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The negatively charged nitrogen-vacancy (NV-) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically < 0.5 %) incorporated during homoepitaxial diamond growth by Chemical Vapor Deposition (CVD) is in the form of undecorated NV- centers. Furthermore, studies on CVD diamond grown on (110) oriented substrates show a near 100% preferential orientation of NV- centers along only the [111] and [-1-11] directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the NVH- is similarly preferentially oriented, but it is not possible to determine whether this defect was formed by H capture at a preferentially aligned NV center or as a complete unit. Reducing the number of NV orientations from 4 orientations to 2 orientations should lead to increased optically-detected magnetic resonance contrast and thus improved magnetic sensitivity in ensemble-based magnetometry.
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Submitted 24 December, 2011;
originally announced December 2011.
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Charge transfer effects, thermo- and photochromism in single crystal CVD synthetic diamond
Authors:
R U A Khan,
P M Martineau,
B L Cann,
M E Newton,
D. J. Twitchen
Abstract:
We report on the effects of thermal treatment and ultraviolet irradiation on the point defect concentrations and optical absorption profiles of single crystal CVD synthetic diamond. All thermal treatments were below 850 K, which is lower than the growth temperature and unlikely to result in any structural change. UV-visible absorption spectroscopy measurements showed that upon thermal treatment…
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We report on the effects of thermal treatment and ultraviolet irradiation on the point defect concentrations and optical absorption profiles of single crystal CVD synthetic diamond. All thermal treatments were below 850 K, which is lower than the growth temperature and unlikely to result in any structural change. UV-visible absorption spectroscopy measurements showed that upon thermal treatment (823 K), various broad absorption features diminished: an absorption band at 270 nm (used to deduce neutral single substitutional nitrogen (NS 0) concentrations), and also two broad features centred at approximately 360 and 520 nm. Point defect centre concentrations as a function of temperature were also deduced using electron paramagnetic resonance (EPR) spectroscopy. Above ~500 K, we observed a decrease in the concentration of NS 0 centres and a concomitant increase in the negatively charged nitrogen-vacancy-hydrogen complex (NVH \bar) concentration. Both transitions exhibited an activation energy between 0.6 and 1.2 eV, which is lower than that for the NS 0 donor (~1.7 eV). Finally, it was found that illuminating samples with intense short-wave ultraviolet light recovered the NS 0 concentration and also the 270, 360 and 520 nm absorption features. From these results, we postulate a valence-band mediated charge-transfer process between NVH and single nitrogen centres with an acceptor trap depth for NVH of 0.6- 1.2 eV. Because the loss of NS 0 concentration is greater than the increase in NVH \bar concentration we also suggest the presence of another unknown acceptor existing at a similar energy as NVH. The extent to which the colour in CVD synthetic diamond is dependent on prior history is discussed.
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Submitted 7 September, 2009;
originally announced September 2009.
