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Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure
Authors:
V. Z. Costa,
Liangbo Liang,
Sam Vaziri,
Addison Miller,
Eric Pop,
A. K. M. Newaz
Abstract:
We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a complex layered crystal composed of alternating SnS$_2$ like pseudohexagonal and PbS-like pseudotetragonal layers stacked on top of each other, providing a unique platform to study vibrational properties and thermal transpo…
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We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a complex layered crystal composed of alternating SnS$_2$ like pseudohexagonal and PbS-like pseudotetragonal layers stacked on top of each other, providing a unique platform to study vibrational properties and thermal transport across layers with mass density and phonon mismatches. By using micro-Raman spectroscopy and first-principles Raman simulations, we found that the PbS-like pseudotetragonal structure is mostly composed of Pb$_3$SbS$_4$. We also discovered several low-frequency Raman modes that originate from the intralayer vibrations of the pseudotetragonal layer. Using density functional theory, we determined all vibrational patterns of Franckeite, whose signatures are observed in the Raman spectrum. By studying temperature dependent Raman spectroscopy (300 K - 500 K), we have found different temperature coefficients for both pseudotetragonal and pseudohexagonal layers. We believe that our study will help understand the vibration modes of its complex heterostructure and the thermal properties at the nanoscale.
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Submitted 15 July, 2021;
originally announced July 2021.
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One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor
Authors:
A. Seredinski,
E. G. Arnault,
V. Z. Costa,
L. Zhao,
T. F. Q. Larson,
K. Watanabe,
T. Taniguchi,
F. Amet,
A. K. M. Newaz,
G. Finkelstein
Abstract:
Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate…
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Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.
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Submitted 15 January, 2021;
originally announced January 2021.
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A high precision falling-ball viscometer using a fast camera
Authors:
Neal Samuel Border,
Aiden Reilly,
Addison Miller,
Shirin Jamali,
A. K. M. Newaz
Abstract:
This paper describes a simple and inexpensive method of measuring viscosity of a Newtonian fluid using the ball drop technique and an inexpensive point and shoot ~1000 frame per second camera. We successfully measured the viscosity of glycerol and glycerol-water mixture with high precision. We used three different size copper balls of diameters 0.8 mm, 1.59 mm, and 2.38 mm to check the accuracy of…
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This paper describes a simple and inexpensive method of measuring viscosity of a Newtonian fluid using the ball drop technique and an inexpensive point and shoot ~1000 frame per second camera. We successfully measured the viscosity of glycerol and glycerol-water mixture with high precision. We used three different size copper balls of diameters 0.8 mm, 1.59 mm, and 2.38 mm to check the accuracy of the measured viscosity in different concentrations of glycerol-water mixer solutions ranging from 50% to 100% (pure glycerol). Our measurements are in excellent agreement with the measurements conducted by other standard techniques. The simple and inexpensive techniques and physics we present in this manuscript can be employed to create a simple viscosity measurement setup for learning about complex fluid mechanics even at the undergraduate laboratory and high school teaching laboratory.
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Submitted 29 June, 2020;
originally announced June 2020.
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Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals
Authors:
Hao Lee,
S. Deshmukh,
**g Wen,
V. Z. Costa,
J. S. Schuder,
M. Sanchez,
A. S. Ichimura,
Eric Pop,
Bin Wang,
A. K. M. Newaz
Abstract:
Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrie…
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Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward develo** nanoscale electronic devices with tailored layer-dependent transport properties.
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Submitted 1 August, 2019;
originally announced August 2019.
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Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume
Authors:
Hannah S. Alpert,
Ananth Saran Yalamarthy,
Peter F. Satterthwaite,
Elizabeth Jens,
Jason Rabinovitch,
Noah Scandrette,
A. K. M. Newaz,
Ashley C. Karp,
Debbie G. Senesky
Abstract:
Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photodetectors fabricated using this material useful for in-situ flame detection and combustion monitoring. In this paper, we use a GaN photodetector to measure ultraviolet (UV) emi…
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Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photodetectors fabricated using this material useful for in-situ flame detection and combustion monitoring. In this paper, we use a GaN photodetector to measure ultraviolet (UV) emissions from a hybrid rocket motor igniter plume. The normalized photocurrent-to-dark current ratio (NPDR) is a performance metric which simultaneously captures the two desired characteristics of high responsivity and low dark current. The NPDR of our device is record-high with a value of 6 x 10$^{14}$ W$^{-1}$ and the UV-to-visible rejection ratio is 4 x 10$^6$. The photodetector shows operation at high temperatures (up to 250°C), with the NPDR still remaining above 10$^9$ W$^{-1}$ and the peak wavelength shifting from 362 nm to 375 nm. The photodetector was placed at three radial distances (3", 5.5", and 7") from the base of the igniter plume and the oxidizer-to-fuel ratio (O2/CH4) was varied. The data demonstrates a clear trend of increasing current (and thus intensity of plume emission) with increasing fuel concentration and decreasing separation between the photodetector and the plume. By treating the plume as a black body, and calculating a radiative configuration factor corresponding to the geometry of the plume and the detector, we calculated average plume temperatures at each of the three oxidizer-to-fuel ratios. The estimated plume temperatures were between 850 and 950 K for all three combustion conditions. The temperature is roughly invariant for a fixed fuel concentration for the three tested distances. These data demonstrate the functionality of GaN as a material platform for use in harsh environment flame monitoring.
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Submitted 6 February, 2019;
originally announced February 2019.
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High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer
Authors:
Peter F. Satterthwaite,
Ananth Saran Yalamarthy,
Noah A. Scandrette,
A. K. M. Newaz,
Debbie G. Senesky
Abstract:
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record high normalized photocurrent-to-dark current ratio (NPDR, $6\times10^{14}$). In addition, we observe a high responsivity ($7,800$ A/W) and ultraviolet-visible…
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An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record high normalized photocurrent-to-dark current ratio (NPDR, $6\times10^{14}$). In addition, we observe a high responsivity ($7,800$ A/W) and ultraviolet-visible rejection-ratio ($10^{6}$), among the highest reported values for any GaN photodetector architecture. We propose a gain mechanism to explain the high responsivity of this device architecture, which corresponds to an internal gain of $26,000$. We argue that the valence band offset in the AlGaN/GaN heterostructure is essential in achieving this high responsivity, allowing for large gains without necessitating the presence of trap states, in contrast to common metal-semiconductor-metal (MSM) photodetector architectures. Our proposed gain mechanism is consistent with measurements of the scaling of gain with device channel width and incident power. In addition to high performance, this photodetector architecture has a simple two-step fabrication flow that is monolithically compatible with AlGaN/GaN high electron mobility transistor (HEMT) processing. This unique combination of low dark current, high responsivity and compatibility with HEMT processing is attractive for a variety of UV sensing applications.
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Submitted 16 August, 2018;
originally announced August 2018.
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Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors
Authors:
Alexander E. Yore,
K. K. H. Smithe,
Sauraj Jha,
Kyle Ray,
Eric Pop,
A. K. M. Newaz
Abstract:
Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable fabrication of monolayer MoS2 photodetectors on sapphire substrates through an efficient process, which includes growing large scale monolayer MoS2 via chemical vapor de…
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Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable fabrication of monolayer MoS2 photodetectors on sapphire substrates through an efficient process, which includes growing large scale monolayer MoS2 via chemical vapor deposition (CVD), and multi-step optical lithography for device patterning and high quality metal electrodes fabrication. In every measured device, we observed the following universal features: (i) negligible dark current $(I_{dark}\leqslant10 fA)$; (ii) sharp peaks in photocurrent at $\sim$1.9eV and $\sim$2.1eV attributable to the optical transitions due to band edge excitons; (iii) a rapid onset of photocurrent above $\sim$2.5eV peaked at $\sim$2.9eV due to an excitonic absorption originating from the van Hove singularity of MoS$_2$. We observe low ($\leqslant 300\%$) device-to-device variation of photoresponsivity. Furthermore, we observe very fast rise time $\sim$0.5 ms, which is three orders of magnitude faster than other reported CVD grown 1L-MoS$_2$ based photodetectors. The combination of scalable device fabrication, ultra-high sensitivity and high speed offer a great potential for applications in photonics.
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Submitted 7 September, 2017;
originally announced October 2017.
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Photoresponse of Natural van der Waals Heterostructures
Authors:
Kyle Ray,
Alexander E. Yore,
Tong Mou,
Sauraj Jha,
K. K. H. Smithe,
Bin Wang,
Eric Pop,
A. K. M. Newaz
Abstract:
Van der Waals (vdW) heterostructures consisting of two dimensional materials offer a platform to obtain material by design and are very attractive owing to novel electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene (Gr), hexagonal boron nitride (h-B…
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Van der Waals (vdW) heterostructures consisting of two dimensional materials offer a platform to obtain material by design and are very attractive owing to novel electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene (Gr), hexagonal boron nitride (h-BN) and member of the transition metal dichalcogenides family. Here we present our experimental study of the opto-electronic properties of a naturally occurring vdWH, known as Franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behave as narrow band gap semiconductor demonstrating a wide band photoresponse. We have observed the band-edge transition at ~ 1500 nm (~830 meV) and high external quantum efficiency (EQE~3%) at room temperature. Laser power resolved and temperature resolved photocurrent measurements reveal that the photo-carrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has fast photoresponse with rise time as fast as ~ 1 ms. Our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH and can open up the possibilities of producing new type of nanoscale optoelectronic devices with tailored properties.
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Submitted 10 May, 2017;
originally announced May 2017.
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Visualization of defect-induced excitonic properties of the edges and grain boundaries in synthesized monolayer molybdenum disulfide
Authors:
A. E. Yore,
K. K. H. Smithe,
W. Crumrine,
A. Miller,
J. A. Tuck,
B. Redd,
E. Pop,
Bin Wang,
A. K. M. Newaz
Abstract:
Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attractive materials for next generation nanoscale optoelectronic applications. Understanding nanoscale optical behavior of the edges and grain boundaries of synthetically grown TMDCs is vital for optimizing their optoelectronic properties. Elucidating the nanoscale optical properties of 2D materials through far-fiel…
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Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attractive materials for next generation nanoscale optoelectronic applications. Understanding nanoscale optical behavior of the edges and grain boundaries of synthetically grown TMDCs is vital for optimizing their optoelectronic properties. Elucidating the nanoscale optical properties of 2D materials through far-field optical microscopy requires a diffraction-limited optical beam diameter sub-micron in size. Here we present our experimental work on spatial photoluminescence (PL) scanning of large size ( $\geq 50$ microns) monolayer MoS$_2$ grown by chemical vapor deposition (CVD) using a diffraction limited blue laser beam spot (wavelength 405 nm) with a beam diameter as small as 200 nm allowing us to probe nanoscale excitonic phenomena which was not observed before. We have found several important features: (i) there exists a sub-micron width strip ($\sim 500$ nm) along the edges that fluoresces $\sim 1000 \%$ brighter than the region far inside; (ii) there is another brighter wide region consisting of parallel fluorescing lines ending at the corners of the zig-zag peripheral edges; (iii) there is a giant blue shifted A-excitonic peak, as large as $\sim 120$ meV, in the PL spectra from the edges. Using density functional theory calculations, we attribute this giant blue shift to the adsorption of oxygen dimers at the edges, which reduces the excitonic binding energy. Our results not only shed light on defect-induced excitonic properties, but also offer an attractive route to tailor optical properties at the TMDC edges through defect engineering.
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Submitted 5 October, 2016;
originally announced October 2016.
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Electrical control of near-field energy transfer between quantum dots and 2D semiconductors
Authors:
Dhiraj Prasai,
Andrey R. Klots,
A. K. M. Newaz,
J. Scott Niezgoda,
Noah J. Orfield,
Carlos A. Escobar,
Alex Wynn,
Anatoly Efimov,
G. Kane Jennings,
Sandra J. Rosenthal,
Kirill I. Bolotin
Abstract:
We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs int…
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We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.
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Submitted 15 June, 2015;
originally announced June 2015.
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Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
Authors:
A. R. Klots,
A. K. M. Newaz,
Bin Wang,
D. Prasai,
H. Krzyzanowska,
D. Caudel,
N. J. Ghimire,
J. Yan,
B. L. Ivanov,
K. A. Velizhanin,
A. Burger,
D. G. Mandrus,
N. H. Tolk,
S. T. Pantelides,
K. I. Bolotin
Abstract:
The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable…
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The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain >1,000) and fast (response time <1ms) photoresponse combined with the high quality of our devices allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we estimate an extremely large binding energy for band-edge excitons, Ebind > 570meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. The analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs.
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Submitted 25 March, 2014;
originally announced March 2014.
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Electrical Control of Optical Properties of Monolayer MoS$_2$
Authors:
A. K. M. Newaz,
D. Prasai,
J. I. Ziegler,
D. Caudel,
S. Robinson,
R. F. Haglund Jr,
K. I. Bolotin
Abstract:
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength rema…
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We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS$_2$ devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS$_2$ with charge carriers.
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Submitted 1 November, 2012;
originally announced November 2012.
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Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
Authors:
A. K. M. Newaz,
Yevgeniy S. Puzyrev,
Bin Wang,
Sokrates T. Pantelides,
Kirill I. Bolotin
Abstract:
Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional gra…
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Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional graphene devices on SiO2 substrates and possibly for the recently reported high-mobility suspended and supported devices. An attractive approach to reduce such scattering is to place graphene in an environment with high static dielectric constant κ that would effectively screen the electric field due to the impurities. However, experiments so far report only a modest effect of high-κ environment on mobility. Here, we investigate the effect of the dielectric environment of graphene by studying electrical transport in multi-terminal graphene devices that are suspended in liquids with κ ranging from 1.9 to 33. For non-polar liquids (κ<5) we observe a rapid increase of μ with κ and report a record room-temperature mobility as large as ~60,000 cm2/Vs for graphene devices in anisole (κ=4.3), while in polar liquids (κ>18) we observe a drastic drop in mobility. We demonstrate that non-polar liquids enhance mobility by screening charged impurities adsorbed on graphene, while charged ions in polar liquids cause the observed mobility suppression. Furthermore, using molecular dynamics simulation we establish that scattering by out-of-plane flexural phonons, a dominant scattering mechanism in suspended graphene in vacuum at room temperature, is suppressed by the presence of liquids. We expect that our findings may provide avenues to control and reduce carrier scattering in future graphene-based electronic devices.
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Submitted 7 March, 2012;
originally announced March 2012.
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Graphene Transistor as a Probe for Streaming Potential
Authors:
A. K. M. Newaz,
D. A. Markov,
D. Prasai,
K. I. Bolotin
Abstract:
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local elec…
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We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the fluid flow (streaming potential). Furthermore, we utilize the sensitivity of electrical transport in GraFETs to the parameters of the fluid flow to demonstrate graphene-based mass flow and ionic concentration sensing. We successfully detect a flow as small as~70nL/min, and detect a change in the ionic concentration as small as ~40nM.
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Submitted 15 February, 2012;
originally announced February 2012.
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Drastic Reduction of Shot Noise in Semiconductor Superlattices
Authors:
W. Song,
A. K. M. Newaz,
J. K. Son,
E. E. Mendez
Abstract:
We have found experimentally that the shot noise of the tunneling current $I$ through an undoped semiconductor superlattice is reduced with respect to the Poissonian noise value $2eI$, and that the noise approaches 1/3 of that value in superlattices whose quantum wells are strongly coupled. On the other hand, when the coupling is weak or when a strong electric field is applied to the superlattic…
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We have found experimentally that the shot noise of the tunneling current $I$ through an undoped semiconductor superlattice is reduced with respect to the Poissonian noise value $2eI$, and that the noise approaches 1/3 of that value in superlattices whose quantum wells are strongly coupled. On the other hand, when the coupling is weak or when a strong electric field is applied to the superlattice the noise becomes Poissonian. Although our results are qualitatively consistent with existing theories for one-dimensional mulitple barriers, the theories cannot account for the dependence of the noise on superlattice parameters that we have observed.
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Submitted 21 October, 2005;
originally announced October 2005.
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Shot-noise characteristics of triple-barrier resonant-tunneling diodes
Authors:
A. K. M. Newaz,
W. Song,
Y. Lin,
J. Nitta,
E. E. Mendez
Abstract:
We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI when the differential conductance is negative. This behavior, although qualitatively similar to that found in double-barrier diodes, differs from it in impor…
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We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI when the differential conductance is negative. This behavior, although qualitatively similar to that found in double-barrier diodes, differs from it in important details. In TBRTDs the noise reduction is considerably larger than predicted by a semi-classical model, and the enhancement does not correlate with the strength of the negative differential conductance. These results suggest an incomplete understanding of the noise properties of multiple-barrier heterostructures.
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Submitted 22 December, 2004;
originally announced December 2004.
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Unusual Tunneling Characteristics of Double-quantum-well Heterostructures
Authors:
Y. Lin,
J. Nitta,
; A. K. M. Newaz,
W. Song,
E. E. Mendez
Abstract:
We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling current was mostly determined by the correlation between the emitter and the state in one well, and not by that between those in both wells. Clear magnetic-fie…
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We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling current was mostly determined by the correlation between the emitter and the state in one well, and not by that between those in both wells. Clear magnetic-field-dependent features were first observed before the main resonance, corresponding to tunneling channels into the Landau levels of the well near the emitter. These facts provide evidence of the violation of in-plane momentum conservation in two-dimensional systems.
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Submitted 14 July, 2004;
originally announced July 2004.
