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Co-operative Influence of O2 and H2O in the Degradation of Layered Black Arsenic
Authors:
Mayank Tanwar,
Sagar Udyavara,
Hwanhui Yun,
Supriya Ghosh,
K. Andre Mkhoyan,
Matthew Neurock
Abstract:
Layered black arsenic (b-As) has recently emerged as a new anisotropic two-dimensional (2D) semiconducting material with applications in electronic devices. Understanding factors affecting the ambient stability of this material remains crucial for its applications. Herein we use first-principles density functional theory (DFT) calculations to examine the stability of the (010) and (101) surfaces o…
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Layered black arsenic (b-As) has recently emerged as a new anisotropic two-dimensional (2D) semiconducting material with applications in electronic devices. Understanding factors affecting the ambient stability of this material remains crucial for its applications. Herein we use first-principles density functional theory (DFT) calculations to examine the stability of the (010) and (101) surfaces of b-As in the presence of oxygen (O2) and water (H2O). We show that the (101) surface of b-As can easily oxidize in presence of O2. In the presence of moisture contained in air, the oxidized b-As surfaces favorably react with H2O molecules to volatilize As in the form of As(OH)3 and AsO(OH), which results in the degradation of the b-As surface, predominantly across the (101) surface. These predictions are in good agreement with experimental electron microscopy observations, thus demonstrating the co-operative reactivity of O2 and H2O in the degradation of layered b-As under ambient conditions.
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Submitted 5 July, 2022;
originally announced July 2022.
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An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
Authors:
Ryan J. Wu,
Sagar Udyavara,
Rui Ma,
Yan Wang,
Manish Chhowalla,
Steven J. Koester,
Matthew Neurock,
K. Andre Mkhoyan
Abstract:
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here, using atomic-resolution analytical scanning transmission electron microscopy (STEM) together with first principle calculations, we show that this contact problem is…
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Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here, using atomic-resolution analytical scanning transmission electron microscopy (STEM) together with first principle calculations, we show that this contact problem is a fundamental limitation from the bonding and interactions at the metal-MoS2 interface that cannot be solved by improved deposition engineering. STEM analysis in conjunction with theory shows that when MoS2 is in contact with Ti, a metal with a high affinity to form strong bonds with sulfur, there is a release of S from Mo along with the formation of small Ti/TixSy clusters. A destruction of the MoS2 layers and penetration of metal can also be expected. The design of true high-mobility metal-MoS2 contacts will require the optimal selection of the metal or alloy based on their bonding interactions with the MoS2 surface. This can be advanced by evaluation of binding energies with increasing the number of atoms within metal clusters.
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Submitted 3 July, 2018;
originally announced July 2018.
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Aqueous Proton Transfer Across Single Layer Graphene
Authors:
Jennifer L. Achtyl,
Raymond R. Unocic,
Lijun Xu,
Yu Cai,
Muralikrishna Raju,
Weiwei Zhang,
Robert L. Sacci,
Ivan V. Vlassiouk,
Pasquale F. Fulvio,
Panchapakesan Ganesh,
David J. Wesolowski,
Sheng Dai,
Adri C. T. van Duin,
Matthew Neurock,
Franz M. Geiger
Abstract:
Proton transfer across single layer graphene is associated with large computed energy barriers and is therefore thought to be unfavorable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here, we subject single layer graphene supported on fused silica to cycles of high and low pH and show that protons transfer reversibly from the aqueous phase t…
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Proton transfer across single layer graphene is associated with large computed energy barriers and is therefore thought to be unfavorable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here, we subject single layer graphene supported on fused silica to cycles of high and low pH and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid-base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.68 to 0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while pyrylium-like ether terminations shut down proton exchange. Unfavorable energy barriers to helium and hydrogen transfer indicate the transfer process is selective for aqueous protons.
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Submitted 30 January, 2015; v1 submitted 4 November, 2014;
originally announced November 2014.
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Modeling electrostatic and quantum detection of molecules
Authors:
S. Vasudevan,
K. Walczak,
N. Kapur,
M. Neurock,
A. W. Ghosh
Abstract:
We describe two different modes for electronically detecting an adsorbed molecule using a nanoscale transistor. The attachment of an ionic molecular target shifts the threshold voltage through modulation of the depletion layer electrostatics. A stronger bonding between the molecule and the channel, involving actual overlap of their quantum mechanical wavefunctions, leads to scattering by the mol…
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We describe two different modes for electronically detecting an adsorbed molecule using a nanoscale transistor. The attachment of an ionic molecular target shifts the threshold voltage through modulation of the depletion layer electrostatics. A stronger bonding between the molecule and the channel, involving actual overlap of their quantum mechanical wavefunctions, leads to scattering by the molecular traps that creates characteristic fingerprints when scanned with a backgate. We describe a theoretical approach to model these transport characteristics.
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Submitted 18 August, 2008;
originally announced August 2008.
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Controlling transistor threshold voltages using molecular dipoles
Authors:
Smitha Vasudevan,
Neeti Kapur,
Tao He,
Matthew Neurock,
James M. Tour,
Avik W. Ghosh
Abstract:
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignm…
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We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.
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Submitted 21 July, 2008;
originally announced July 2008.
