-
Nanoscale imaging of He-ion irradiation effects on amorphous TaO$_x$ toward electroforming-free neuromorphic functions
Authors:
Olha Popova,
Steven J. Randolph,
Sabine M. Neumayer,
Liangbo Liang,
Benjamin Lawrie,
Olga S. Ovchinnikova,
Robert J. Bondi,
Matthew J. Marinella,
Bobby G. Sumpter,
Petro Maksymovych
Abstract:
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Spec…
▽ More
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Specifically, we apply Scanning Microwave Impedance Microscopy (sMIM) and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO$_x$ despite its amorphous nature. For example CL identifies characteristic impurity levels in TaO$_x$, in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of < 20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. The multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.
△ Less
Submitted 20 July, 2023;
originally announced July 2023.
-
Polarization-controlled volatile ferroelectric and capacitive switching in Sn$_2$P$_2$S$_6$
Authors:
Sabine M. Neumayer,
Anton V. Ievlev,
Alexander Tselev,
Sergey A. Basun,
Benjamin S. Conner,
Michael A. Susner,
Petro Maksymovych
Abstract:
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initia…
▽ More
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau-Ginzburg-Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, domain wall mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.
△ Less
Submitted 26 August, 2022;
originally announced August 2022.
-
Structures and velocities of noisy ferroelectric domain walls
Authors:
Nora Bauer,
Sabine M. Neumayer,
Petro Maksymovych,
Maxim O. Lavrentovich
Abstract:
Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a Landau-Ginzburg-Devonshire (LGD) model of 180${}^{\circ}$ ferroelectric domain wall motion that explicitly takes into account the presence of both spatial and temporal disorder.…
▽ More
Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a Landau-Ginzburg-Devonshire (LGD) model of 180${}^{\circ}$ ferroelectric domain wall motion that explicitly takes into account the presence of both spatial and temporal disorder. We demonstrate both creep flow and linear flow regimes of the domain wall dynamics by solving the LGD equations in a Galilean frame moving with the wall velocity $v$. Thermal noise plays a key role in the wall depinning process at small fields $E$. We study the scaling of the velocity $v$ with the applied DC electric field $E$ and show that noise strongly affects domain wall velocities. We also show that the domain wall widens significantly in the presence of thermal noise, especially as the material temperature $T$ approaches the critical temperature $T_c$. These calculations therefore point to the potential of noise and disorder to become control factors for the switching properties of ferroelectric materials, for example for advancement of microelectronic applications.
△ Less
Submitted 5 August, 2022;
originally announced August 2022.
-
Comparing Heuristics, Constraint Optimization, and Reinforcement Learning for an Industrial 2D Packing Problem
Authors:
Stefan Böhm,
Martin Neumayer,
Oliver Kramer,
Alexander Schiendorfer,
Alois Knoll
Abstract:
Cutting and Packing problems are occurring in different industries with a direct impact on the revenue of businesses. Generally, the goal in Cutting and Packing is to assign a set of smaller objects to a set of larger objects. To solve Cutting and Packing problems, practitioners can resort to heuristic and exact methodologies. Lately, machine learning is increasingly used for solving such problems…
▽ More
Cutting and Packing problems are occurring in different industries with a direct impact on the revenue of businesses. Generally, the goal in Cutting and Packing is to assign a set of smaller objects to a set of larger objects. To solve Cutting and Packing problems, practitioners can resort to heuristic and exact methodologies. Lately, machine learning is increasingly used for solving such problems. This paper considers a 2D packing problem from the furniture industry, where a set of wooden workpieces must be assigned to different modules of a trolley in the most space-saving way. We present an experimental setup to compare heuristics, constraint optimization, and deep reinforcement learning for the given problem. The used methodologies and their results get collated in terms of their solution quality and runtime. In the given use case a greedy heuristic produces optimal results and outperforms the other approaches in terms of runtime. Constraint optimization also produces optimal results but requires more time to perform. The deep reinforcement learning approach did not always produce optimal or even feasible solutions. While we assume this could be remedied with more training, considering the good results with the heuristic, deep reinforcement learning seems to be a bad fit for the given use case.
△ Less
Submitted 27 October, 2021;
originally announced October 2021.
-
Ionic control over ferroelectricity in 2D layered van der Waals capacitors
Authors:
Sabine M. Neumayer,
Mengwei Si,
Junkang Li,
Pai-Ying Liao,
Lei Tao,
Andrew O'Hara,
Sokrates T. Pantelides,
Peide D. Ye,
Petro Maksymovych,
Nina Balke
Abstract:
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneo…
▽ More
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically controlled ferroelectric behavior, achieved by applying selected DC voltage pulses and subsequently probing ferroelectric switching during fast triangular voltage sweeps. Using current measurements and theoretical calculations, we observe that increasing DC pulse duration results in higher ionic currents, the build-up of an internal electric field that shifts polarization loops, and an increase in total switchable polarization by ~50% due to the existence of a high polarization phase which is stabilized by the internal electric field. Apart from tuning ferroelectric behavior by selected square pulses, hysteretic polarization switching can even be entirely deactivated and reactivated, resulting in three-state systems where polarization switching is either inhibited or can be performed in two different directions.
△ Less
Submitted 19 January, 2022; v1 submitted 27 September, 2021;
originally announced September 2021.
-
Randomized Reduced Forward Models for Efficient Metropolis--Hastings MCMC, with Application to Subsurface Fluid Flow and Capacitance Tomography
Authors:
Colin Fox,
Tiangang Cui,
Markus Neumayer
Abstract:
Bayesian modelling and computational inference by Markov chain Monte Carlo (MCMC) is a principled framework for large-scale uncertainty quantification, though is limited in practice by computational cost when implemented in the simplest form that requires simulating an accurate computer model at each iteration of the MCMC. The delayed acceptance Metropolis--Hastings MCMC leverages a reduced model…
▽ More
Bayesian modelling and computational inference by Markov chain Monte Carlo (MCMC) is a principled framework for large-scale uncertainty quantification, though is limited in practice by computational cost when implemented in the simplest form that requires simulating an accurate computer model at each iteration of the MCMC. The delayed acceptance Metropolis--Hastings MCMC leverages a reduced model for the forward map to lower the compute cost per iteration, though necessarily reduces statistical efficiency that can, without care, lead to no reduction in the computational cost of computing estimates to a desired accuracy. Randomizing the reduced model for the forward map can dramatically improve computational efficiency, by maintaining the low cost per iteration but also avoiding appreciable loss of statistical efficiency. Randomized maps are constructed by a posteriori adaptive tuning of a randomized and locally-corrected deterministic reduced model. Equivalently, the approximated posterior distribution may be viewed as induced by a modified likelihood function for use with the reduced map, with parameters tuned to optimize the quality of the approximation to the correct posterior distribution. Conditions for adaptive MCMC algorithms allow practical approximations and algorithms that have guaranteed ergodicity for the target distribution. Good statistical and computational efficiencies are demonstrated in examples of calibration of large-scale numerical models of geothermal reservoirs and electrical capacitance tomography.
△ Less
Submitted 17 September, 2020;
originally announced September 2020.
-
To switch or not to switch -- a machine learning approach for ferroelectricity
Authors:
Sabine M. Neumayer,
Stephen Jesse,
Gabriel Velarde,
Andrei L. Kholkin,
Ivan Kravchenko,
Lane W. Martin,
Nina Balke,
Peter Maksymovych
Abstract:
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in multidimensional data sets spanning a range of experimental parameters. As an example, a common approach to study ferroelectric switching is to observe effects of…
▽ More
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in multidimensional data sets spanning a range of experimental parameters. As an example, a common approach to study ferroelectric switching is to observe effects of applied electric field, but switching can also be enacted by pressure and is influenced by strain fields, material composition, temperature, time, etc. Moreover, the parameters are usually interdependent, so that their decoupling toward univariate measurements or analysis may not be straightforward. On the other hand, both explicit and hidden parameters provide an opportunity to gain deeper insight into the measured properties, provided there exists a well-defined path to capture and analyze such data. Here, we introduce a new, two-dimensional approach to represent hysteretic response of a material system to applied electric field. Utilizing ferroelectric polarization as a model hysteretic property, we demonstrate how explicit consideration of electromechanical response to two rather than one control voltages enables significantly more transparent and robust interpretation of observed hysteresis, such as differentiating between charge trap** and ferroelectricity. Furthermore, we demonstrate how the new data representation readily fits into a variety of machinelearning methodologies, from unsupervised classification of the origins of hysteretic response via linear clustering algorithms to neural-network-based inference of the sample temperature based on the specific morphology of hysteresis.
△ Less
Submitted 17 April, 2020;
originally announced April 2020.
-
Piezoresponse phase as variable in electromechanical characterization
Authors:
Sabine M. Neumayer,
Sahar Saremi,
Lane W. Martin,
Liam Collins,
Alexander Tselev,
Stephen Jesse,
Sergei V. Kalinin,
Nina Balke
Abstract:
Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units to physical material parameters, however, remains a challenge. While much effort…
▽ More
Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units to physical material parameters, however, remains a challenge. While much effort has been spent on quantifying the PFM amplitude signal, little attention has been given to the PFM phase and it is often arbitrarily adjusted to fit expectations or processed as recorded. This is problematic when investigating materials with unknown or potentially negative sign of the probed effective electrostrictive coefficient or strong frequency dispersion of electromechanical responses since assumptions about the phase cannot be reliably made. The PFM phase can, however, provide important information on the polarization orientation and the sign of the electrostrictive coefficient. Most notably, the orientation of the PFM hysteresis loop is determined by the PFM phase. Moreover, when presenting PFM data as a combined signal, the resulting response can be artificially lowered or asymmetric if the phase data has not been correctly processed. Here, we demonstrate a path to identify the phase offset required to extract correct meaning from PFM phase data. We explore different sources of phase offsets including the experimental setup, instrumental contributions, and data analysis. We discuss the physical working principles of PFM and develop a strategy to extract physical meaning from the PFM phase. The proposed procedures are verified on two materials with positive and negative piezoelectric coefficients.
△ Less
Submitted 6 December, 2019;
originally announced December 2019.
-
Analyzing Control Flow Integrity with LLVM-CFI
Authors:
Paul Muntean,
Matthias Neumayer,
Zhiqiang Lin,
Gang Tan,
Jens Grossklags,
Claudia Eckert
Abstract:
Control-flow hijacking attacks are used to perform malicious com-putations. Current solutions for assessing the attack surface afteracontrol flow integrity(CFI) policy was applied can measure onlyindirect transfer averages in the best case without providing anyinsights w.r.t. the absolute calltarget reduction per callsite, and gad-get availability. Further, tool comparison is underdeveloped or not…
▽ More
Control-flow hijacking attacks are used to perform malicious com-putations. Current solutions for assessing the attack surface afteracontrol flow integrity(CFI) policy was applied can measure onlyindirect transfer averages in the best case without providing anyinsights w.r.t. the absolute calltarget reduction per callsite, and gad-get availability. Further, tool comparison is underdeveloped or notpossible at all. CFI has proven to be one of the most promising pro-tections against control flow hijacking attacks, thus many effortshave been made to improve CFI in various ways. However, there isa lack of systematic assessment of existing CFI protections. In this paper, we presentLLVM-CFI, a static source code analy-sis framework for analyzing state-of-the-art static CFI protectionsbased on the Clang/LLVM compiler framework.LLVM-CFIworksby precisely modeling a CFI policy and then evaluating it within aunified approach.LLVM-CFIhelps determine the level of securityoffered by different CFI protections, after the CFI protections weredeployed, thus providing an important step towards exploit cre-ation/prevention and stronger defenses. We have usedLLVM-CFIto assess eight state-of-the-art static CFI defenses on real-worldprograms such as Google Chrome and Apache Httpd.LLVM-CFIprovides a precise analysis of the residual attack surfaces, andaccordingly ranks CFI policies against each other.LLVM-CFIalsosuccessfully paves the way towards construction of COOP-like codereuse attacks and elimination of the remaining attack surface bydisclosing protected calltargets under eight restrictive CFI policies.
△ Less
Submitted 2 October, 2019;
originally announced October 2019.
-
Room Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid State Refrigeration
Authors:
Mengwei Si,
Atanu K. Saha,
Pai-Ying Liao,
Shengjie Gao,
Sabine M. Neumayer,
Jie Jian,
**gkai Qin,
Nina Balke,
Haiyan Wang,
Petro Maksymovych,
Wenzhuo Wu,
Sumeet K. Gupta,
Peide D. Ye
Abstract:
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great inte…
▽ More
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great interest and importance. Here, we report on the ECE of ferroelectric materials with van der Waals layered structure (CuInP2S6 or CIPS in this work in particular). Over 60% polarization charge change is observed within a temperature change of only 10 K at Curie temperature. Large adiabatic temperature change (|ΔT|) of 3.3 K, isothermal entropy change (|ΔS|) of 5.8 J kg-1 K-1 at |ΔE|=142.0 kV cm-1 at 315 K (above and near room temperature) are achieved, with a large EC strength (|ΔT|/|ΔE|) of 29.5 mK cm kV-1. The ECE of CIPS is also investigated theoretically by numerical simulation and a further EC performance projection is provided.
△ Less
Submitted 13 September, 2019; v1 submitted 19 January, 2019;
originally announced January 2019.
-
Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric
Authors:
Sabine M. Neumayer,
Eugene A. Eliseev,
Michael A. Susner,
Alexander Tselev,
Brian J. Rodriguez,
John A. Brehm,
Sokrates T. Pantelides,
Ganesh Panchapakesan,
Stephen Jesse,
Sergei V. Kalinin,
Michael A. McGuire,
Anna N. Morozovska,
Petro Maksymovych,
Nina Balke
Abstract:
The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q3…
▽ More
The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as -3.2 m4/C2 and a resulting bulk piezoelectric coefficient d33 up to -85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few uC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely-used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials and might facilitate the quest towards novel ultrathin functional devices incorporating electromechanical response.
△ Less
Submitted 1 February, 2019; v1 submitted 21 March, 2018;
originally announced March 2018.